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公开(公告)号：US20240266476A1
公开(公告)日：2024-08-08
申请号：US18638220
申请日：2024-04-17
Applicant: EPISTAR CORPORATION
Inventor： Chao-Hsing CHEN , Tsung-Hsun CHIANG , Chien-Chih LIAO , Wen-Hung CHUANG , Min-Yen TSAI , Bo-Jiun HU
Abstract: A light-emitting element includes a semiconductor light-emitting stack including a first semiconductor layer, a second semiconductor layer formed on the first semiconductor layer, and an active layer formed therebetween; a first conductive layer disposed on the second semiconductor layer and electrically connecting the second semiconductor layer; a second conductive layer disposed on the second semiconductor layer and electrically connecting the first semiconductor layer; and a cushion part disposed on and directly contacts the first conductive layer, wherein in a top view, the cushion part is surrounded by and electrically isolated from the second conductive layer.
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公开(公告)号：US20240234635A9
公开(公告)日：2024-07-11
申请号：US18401106
申请日：2023-12-29
Applicant: EPISTAR CORPORATION
Inventor： Chao-Hsing CHEN , Jia-Kuen WANG , Tzu-Yao TSENG , Tsung-Hsun CHIANG , Bo-Jiun HU , Wen-Hung CHUANG , Yu-Ling LIN
CPC classification number: H01L33/382 , H01L33/00 , H01L33/10 , H01L33/24 , H01L33/385 , H01L33/387 , H01L33/42 , H01L33/46 , H01L33/62 , H01L33/0012 , H01L33/02
Abstract: A semiconductor light-emitting device includes a semiconductor stack including a first semiconductor layer and a second semiconductor layer; a first reflective layer formed on the first semiconductor layer and including a plurality of vias; a plurality of contact structures respectively filled in the vias and electrically connected to the first semiconductor layer; a second reflective layer including metal material formed on the first reflective layer and contacting the contact structures; a plurality of conductive vias surrounded by the semiconductor stack; a connecting layer formed in the conductive vias and electrically connected to the second semiconductor layer; a first pad portion electrically connected to the second semiconductor layer; and a second pad portion electrically connected to the first semiconductor layer, wherein a shortest distance between two of the conductive vias is larger than a shortest distance between the first pad portion and the second pad portion.
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公开(公告)号：US20230395765A1
公开(公告)日：2023-12-07
申请号：US18230119
申请日：2023-08-03
Applicant: EPISTAR CORPORATION
Inventor： Hsin-Ying WANG , Chih-Hao CHEN , Chien-Chih LIAO , Chao-Hsing CHEN , Wu-Tsung LO , Tsun-Kai KO , Chen OU
Abstract: A light-emitting device comprises a substrate comprising a top surface and a sidewall; a semiconductor stack formed on the top surface of the substrate comprising a first semiconductor layer, an active layer and a second semiconductor layer; a dicing street surrounding the semiconductor stack and exposing the top surface of the substrate; a protective layer covering the semiconductor stack and the dicing street; a reflective layer comprising a Distributed Bragg Reflector structure and covering the protective layer; and a cap layer covering the reflective layer, wherein the reflective layer comprises an uneven portion adjacent to the sidewall of the substrate, and the uneven portion comprises an uneven thickness.
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公开(公告)号：US20230261148A1
公开(公告)日：2023-08-17
申请号：US18136921
申请日：2023-04-20
Applicant: EPISTAR CORPORATION
Inventor： Chao-Hsing CHEN , Jia-Kuen WANG , Tzu-Yao TSENG , Bo-Jiun HU , Tsung-Hsun CHIANG , Wen-Hung CHUANG , Kuan-Yi LEE , Yu-Ling LIN , Chien-Fu SHEN , Tsun-Kai KO
CPC classification number: H01L33/46 , H01L33/382 , H01L33/38 , H01L33/405
Abstract: A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer; one or multiple vias penetrating the active layer and the second semiconductor layer to expose the first semiconductor layer; a first contact layer covering the one or multiple vias; a third insulating layer including a first group of one or multiple third insulating openings on the second semiconductor layer to expose the first contact layer; a first pad on the semiconductor stack and covering the first group of one or multiple third insulating openings; and a second pad on the semiconductor stack and separated from the first pad with a distance, wherein the second pad is formed at a position other than positions of the one or multiple vias in a top view of the light-emitting device.
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公开(公告)号：US20220384687A1
公开(公告)日：2022-12-01
申请号：US17827622
申请日：2022-05-27
Applicant: EPISTAR CORPORATION
Inventor： Chao-Hsing CHEN , Yi-Hung LIN , Kuo-Ching HUNG , Chi-Shiang HSU
Abstract: A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer and a second semiconductor layer, wherein in a top view, the semiconductor stack comprises an outer peripheral region and an inner region, the outer peripheral region exposes the first semiconductor layer, and the second semiconductor layer is disposed in the inner region; an outer insulated structure comprising an insulation layer and a protective layer, the insulation layer comprising a plurality of first insulation layer outer openings and a second insulation layer opening; a first electrode covering the plurality of first insulation layer outer openings; and a second electrode covering the second insulation layer opening, wherein the outer insulated structure comprises a total thickness gradually decreasing from the outer peripheral region to the inner region.
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Patent Agency Ranking
公开(公告)号：US20200044116A1
公开(公告)日：2020-02-06
申请号：US16529370
申请日：2019-08-01
Applicant: EPISTAR CORPORATION
Inventor： Chao-Hsing CHEN , Cheng-Lin LU , Chih-Hao CHEN , Chi-Shiang HSU , I-Lun MA , Meng-Hsiang HONG , Hsin-Ying WANG , Kuo-Ching HUNG , Yi-Hung LIN
Abstract: A light-emitting device includes a substrate including a top surface, a first side surface and a second side surface, wherein the first side surface and the second side surface of the substrate are respectively connected to two opposite sides of the top surface of the substrate; a semiconductor stack formed on the top surface of the substrate, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode pad formed adjacent to a first edge of the light-emitting device; and a second electrode pad formed adjacent to a second edge of the light-emitting device, wherein in a top view of the light-emitting device, the first edge and the second edge are formed on different sides or opposite sides of the light-emitting device, the first semiconductor layer adjacent to the first edge includes a first sidewall directly connected to the first side surface of the substrate, and the first semiconductor layer adjacent to the second edge includes a second sidewall separated from the second side surface of the substrate by a distance.
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公开(公告)号：US20190035846A1
公开(公告)日：2019-01-31
申请号：US16037862
申请日：2018-07-17
Applicant: EPISTAR CORPORATION
Inventor： Chien-Fu SHEN , Chao-Hsing CHEN , Tsun-Kai KO , Schang-Jing HON , Sheng-Jie HSU , De-Shan KUO , Hsin-Ying WANG , Chiu-Lin YAO , Chien-Fu HUANG , Hsin-Mao LIU , Chien-Kai CHUNG
Abstract: Disclosed herein is a light-emitting device. The light-emitting device includes a substrate with a top surface; a first light-emitting structure unit and a second structure light-emitting unit disposed on the top surface, the first light-emitting structure unit and the second light-emitting structure unit being spaced apart from each other, wherein each of the first light-emitting structure unit and the second light-emitting structure unit includes a lower layer having a first conductivity and an upper layer having a second conductivity; a trench between the first light-emitting structure unit and the second light-emitting structure unit, including a bottom portion which is a part of the top surface; an isolation layer, disposed on the trench and covering the bottom portion; and an electrical connection, electrically connecting the first light-emitting structure unit and the second light-emitting structure unit; wherein the lower layer includes an inclined sidewall and the electrical connection contacts the inclined sidewall.
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公开(公告)号：US20180212110A1
公开(公告)日：2018-07-26
申请号：US15874398
申请日：2018-01-18
Applicant: EPISTAR CORPORATION
Inventor： Chao-Hsing CHEN , Jia-Kuen WANG , Wen-Hung CHUANG , Tzu-Yao TSENG , Cheng-Lin LU
CPC classification number: H01L33/405 , F21K9/23 , F21K9/232 , F21K9/69 , F21Y2115/10 , H01L33/0075 , H01L33/06 , H01L33/12 , H01L33/22 , H01L33/32 , H01L33/42 , H01L33/46 , H01L33/62 , H01L2933/0016 , H01L2933/0025
Abstract: A light-emitting device includes a semiconductor structure comprising a surface and a side wall inclined to the surface, wherein the semiconductor structure comprises a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, and the second semiconductor layer comprises a first edge and a first area; and a reflective layer located on the semiconductor structure and comprising an outer edge and a second area; wherein a distance between the first edge and the outer edge is between 0 μm and 10 μm, and the second area of the reflective layer is not less than 80% of the first area of the second semiconductor layer.
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公开(公告)号：US20170005232A1
公开(公告)日：2017-01-05
申请号：US15265069
申请日：2016-09-14
Applicant: EPISTAR CORPORATION
Inventor： Chao-Hsing CHEN , Jia-Kuen WANG , Tzu-Yao TSENG , Tsung-Hsun CHIANG , Bo-Jiun HU , Wen-Hung CHUANG , Yu-Ling LIN
CPC classification number: H01L33/382 , H01L33/0012 , H01L33/08 , H01L33/22 , H01L33/38 , H01L33/387 , H01L33/46 , H01L33/62 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014
Abstract: A semiconductor light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer; a plurality of first trenches penetrating the second semiconductor layer and the active layer to expose the first semiconductor layer; a second trench penetrating the second semiconductor layer and the active layer to expose the first semiconductor layer, wherein the second trench is disposed near an outmost edge of the active layer, and surrounds the active layer and the plurality of first trenches; a patterned metal layer formed on the second semiconductor layer and formed in one of the plurality of first trenches or the second trench; and a first pad portion and a second pad portion both formed on the second semiconductor layer and electrically connecting the second semiconductor layer and the first semiconductor layer respectively.
Abstract translation: 半导体发光器件包括：包括第一半导体层，第二半导体层和有源层的半导体堆叠; 穿过所述第二半导体层和所述有源层的多个第一沟槽以暴露所述第一半导体层; 穿过所述第二半导体层和所述有源层以暴露所述第一半导体层的第二沟槽，其中所述第二沟槽设置在所述有源层的最外边缘附近，并且包围所述有源层和所述多个第一沟槽; 形成在所述第二半导体层上并形成在所述多个第一沟槽或所述第二沟槽之一中的图案化金属层; 以及分别形成在所述第二半导体层上并分别电连接所述第二半导体层和所述第一半导体层的第一焊盘部分和第二焊盘部分。
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公开(公告)号：US20160307961A1
公开(公告)日：2016-10-20
申请号：US15196717
申请日：2016-06-29
Applicant: EPISTAR CORPORATION
Inventor： Chien-Fu SHEN , Chao-Hsing CHEN , Tsun-Kai KO , Schang-Jing HON , Sheng-Jie HSU , De-Shan KUO , Hsin-Ying WANG , Chiu-Lin YAO , Chien-Fu HUANG , Hsin-Mao LIU , Chien-Kai CHUNG
CPC classification number: H01L27/156 , H01L25/0753 , H01L27/153 , H01L33/20 , H01L33/382 , H01L33/385 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
Abstract: Disclosed herein is a light-emitting device. The light-emitting device includes a substrate; a first light-emitting unit and a second light-emitting unit, separately formed on the substrate; a trench between the first and the second light-emitting units, including a bottom portion exposing the substrate; an insulating layer, conformably formed on the trench and covering the bottom portion and sidewalls of the first and the second light-emitting units; and an electrical connection, formed on the insulating layer and electrically connecting the first and the second light-emitting units. The electrical connection includes a bridging portion covering the trench and a joining portion extending from the bridging portion and formed on the first and the second light-emitting units; wherein the bridging portion is wider than the joining portion; wherein a part of the insulating layer is formed under the joining portion.
Abstract translation: 这里公开了一种发光装置。 发光装置包括：基板; 分别形成在基板上的第一发光单元和第二发光单元; 在第一和第二发光单元之间的沟槽，包括露出衬底的底部; 绝缘层，顺应地形成在沟槽上并覆盖第一和第二发光单元的底部和侧壁; 以及形成在绝缘层上并电连接第一和第二发光单元的电连接。 电气连接包括覆盖沟槽的桥接部分和从桥接部分延伸并形成在第一和第二发光单元上的接合部分; 其中所述桥接部分比所述接合部分宽; 其中，所述绝缘层的一部分形成在所述接合部的下方。
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