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    SEMICONDUCTOR DEVICE
    1.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20250006864A1

    公开(公告)日：2025-01-02

    申请号：US18756777

    申请日：2024-06-27

    Applicant: EPISTAR CORPORATION

    Inventor： Yi-Chieh LIN ,  Shih-Chang LEE ,  Wei-Chu LIAO ,  Mei-Chun LIU ,  Hui-Ching FENG ,  Zhen-Kai KAO ,  Yih-Hua RENN ,  Min-Hsun HSIEH

    IPC: H01L33/30 ,  H01L33/38

    Abstract: A semiconductor device is provided, which includes an epitaxial structure, a first contact electrode and a second contact electrode. The epitaxial structure includes a first semiconductor structure, a second semiconductor structure and an active region. The first semiconductor structure includes a first semiconductor contact layer. The second semiconductor structure includes a second semiconductor contact layer. The active region is located between the first semiconductor structure and the second semiconductor structure. The first contact electrode is located on the second semiconductor contact layer and directly contacts the first semiconductor contact layer. The second contact electrode is located on the second semiconductor contact layer and directly contacts the second semiconductor contact layer. The first semiconductor contact layer has a conductivity type of n-type and includes a first group III-V semiconductor material. The second semiconductor contact layer has a conductivity type of p-type and includes a second group III-V semiconductor material.

    SEMICONDUCTOR DEVICE AND PACKAGE STRUCTURE
    3.
    发明申请
    SEMICONDUCTOR DEVICE AND PACKAGE STRUCTURE 审中-公开

    公开(公告)号：US20200152836A1

    公开(公告)日：2020-05-14

    申请号：US16680214

    申请日：2019-11-11

    Applicant: EPISTAR CORPORATION

    Inventor： Wen-Luh LIAO ,  Cheng-Long YEH ,  Ko-Yin LAI ,  Yao-Ru CHANG ,  Yung-Fu CHANG ,  Yi HSIAO ,  Shih-Chang LEE

    IPC: H01L33/38 ,  H01L33/62

    Abstract: A semiconductor device and a package structure are provided. The semiconductor device includes a substrate, a light-emitting structure, a first semiconductor layer, a second semiconductor layer and a first electrode. The light-emitting structure is on the substrate. The first semiconductor layer is on the light-emitting structure. The second semiconductor layer is between the first semiconductor layer and the light-emitting structure. The first electrode is on the second semiconductor layer. At least a portion of the first electrode is separated from the first semiconductor layer.

    SEMICONDUCTOR DEVICE
    4.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20200152831A1

    公开(公告)日：2020-05-14

    申请号：US16680207

    申请日：2019-11-11

    Applicant: EPISTAR CORPORATION

    Inventor： Yung-Fu CHANG ,  Hui-Fang KAO ,  Yi-Tang LAI ,  Shih-Chang LEE ,  Wen-Luh LIAO ,  Mei Chun LIU ,  Yao-Ru CHANG ,  Yi HISAO

    IPC: H01L33/14 ,  H01L25/075 ,  H01L33/40

    Abstract: A semiconductor device includes a conductive layer, a semiconductor stack, a first contact structure, an intermediate structure, a second contact structure, a first electrode and a second electrode. The semiconductor stack is disposed on the conductive layer. The first contact structure is disposed on the semiconductor stack. The intermediate structure encloses the first contact structure. The second contact structure is between the conductive layer and the semiconductor stack. The first electrode is on the conductive layer and separated from the semiconductor stack. The second electrode is on the intermediate structure.

    OPTOELECTRONIC DEVICE
    7.
    发明申请
    OPTOELECTRONIC DEVICE 有权
    光电器件

    公开(公告)号：US20140312370A1

    公开(公告)日：2014-10-23

    申请号：US14257716

    申请日：2014-04-21

    Applicant: EPISTAR CORPORATION

    Inventor： Shiuan-Leh LIN ,  Shih-Chang LEE

    IPC: H01L33/12 ,  H01L31/0352

    CPC classification number: H01L33/12 ,  H01L21/02461 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/02543 ,  H01L31/03046 ,  H01L31/06875 ,  H01L31/1844 ,  Y02E10/544

    Abstract: An optoelectronic device comprising a first semiconductor layer having a first lattice constant; a second semiconductor layer having a second lattice constant, wherein the second lattice constant is smaller than the first lattice constant; and a first buffer layer formed between the first semiconductor layer and the second semiconductor layer, wherein a lattice constant of one side of the first buffer layer near the second semiconductor layer is smaller than the second lattice constant.

    Abstract translation: 一种光电器件，包括具有第一晶格常数的第一半导体层; 具有第二晶格常数的第二半导体层，其中所述第二晶格常数小于所述第一晶格常数; 以及形成在第一半导体层和第二半导体层之间的第一缓冲层，其中在第二半导体层附近的第一缓冲层的一侧的晶格常数小于第二晶格常数。

    SEMICONDUCTOR LIGHT-EMITTING DEVICE AND SEMICONDUCTOR LIGHT-EMITTING COMPONENT
    8.
    发明申请
    SEMICONDUCTOR LIGHT-EMITTING DEVICE AND SEMICONDUCTOR LIGHT-EMITTING COMPONENT 有权

    公开(公告)号：US20250169238A1

    公开(公告)日：2025-05-22

    申请号：US19031651

    申请日：2025-01-18

    Applicant: EPISTAR CORPORATION

    Inventor： Jian-Zhi CHEN ,  Yen-Chun TSENG ,  Hui-Fang KAO ,  Yao-Ning CHAN ,  Yi-Tang LAI ,  Yun-Chung CHOU ,  Shih-Chang LEE ,  Chen OU

    IPC: H10H20/83 ,  H01L25/075 ,  H10H20/819 ,  H10H20/824 ,  H10H20/825 ,  H10H20/831 ,  H10H20/841

    Abstract: The present disclosure provides a semiconductor light-emitting device. The semiconductor light-emitting device includes a first semiconductor contact layer, a semiconductor light-emitting stack, a first-conductivity-type contact structure, a second semiconductor contact layer, a second-conductivity-type contact structure, a first electrode pad and a second electrode pad. The semiconductor light-emitting stack is located on the first semiconductor contact layer and comprising an active layer. The first-conductivity-type contact structure is located on the first semiconductor contact layer. The second semiconductor contact layer is located on the semiconductor light-emitting stack. The second-conductivity-type contact structure is located on the semiconductor light-emitting stack and electrically connected to the second semiconductor contact layer. The first electrode pad is located on the first-conductivity-type contact structure. The second electrode pad is located on the second-conductivity-type contact structure. The second-conductivity-type contact structure includes a bonding portion, an extension portion, and a connection portion.

    LIGHT EMITTING DEVICE
    9.
    发明申请
    LIGHT EMITTING DEVICE 有权

    公开(公告)号：US20250089400A1

    公开(公告)日：2025-03-13

    申请号：US18243985

    申请日：2023-09-08

    Applicant: EPISTAR CORPORATION

    Inventor： Hao-Chun LIANG ,  Yi-Shan TSAI ,  Wei-Shan YEOH ,  Yao-Ning CHAN ,  Hsuan-Le LIN ,  Jiong-Chaso SU ,  Shih-Chang LEE ,  Chang-Da TSAI

    IPC: H01L33/06 ,  H01L33/10 ,  H01L33/30

    Abstract: A semiconductor device, including a base and a semiconductor stack. The semiconductor stack includes a first semiconductor structure located on the base, a second semiconductor structure located on the first semiconductor structure, and an active structure located between the first semiconductor structure and the second semiconductor structure. The active structure includes two confinement layers and a well layer located between the two confinement layers. One of the confinement layers includes Alx1Ga1-x1As, and x1 is equal to or larger than 0.25 and equal to or smaller than 0.4. The well layer includes Inx2Ga1-x2As, and x2 is equal to or larger than 0.25 and equal to or smaller than 0.3. The one of the confinement layers and the well layer respectively have a first thickness in a range of 200 nm to 400 nm and a second thickness in a range of 3 nm to 6 nm.

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