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公开(公告)号:JP2003241384A
公开(公告)日:2003-08-27
申请号:JP2002046679
申请日:2002-02-22
Applicant: JSR CORP , IBM , JSR MICRO INC
Inventor: NISHIMURA YUKIO , YAMAMOTO MASASHI , ISHII HIROYUKI , MARK SLEZAK , BRUNSVOLD WILLIAM R , MARGARET C LAWSON , CHEN KUANG-JUNG , KWONG RANEE W , VARANASI PUSHKARA RAO
IPC: G03F7/039 , C08F220/18 , C08F220/28 , H01L21/027
Abstract: PROBLEM TO BE SOLVED: To provide a radiation-sensitive resin composition having high transparency to a radiation and useful as a chemically amplified resist excellent in sensitivity, resolution, dry etching resistance and pattern shape. SOLUTION: The radiation-sensitive resin composition comprises (A) a resin typified by a copolymer of 2-methyl-2-adamantyl methacrylate, 3-hydroxy-1- adamantyl methacrylate and a methacrylic ester of formula (1), (B) a radiation- sensitive acid generator typified by triphenylsulfonium nonafluoro-n- butanesulfonate or 1-(4-n-butoxy-1-naphthyl)tetrahydrothiophenium perfluoro-n- octanesulfonate and (C) a solvent. Preferably the solvent (C) includes at least one selected from the group comprising propylene glycol monomethyl ether acetate, 2-heptanone and cyclohexanone. COPYRIGHT: (C)2003,JPO
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公开(公告)号:JP2000298350A
公开(公告)日:2000-10-24
申请号:JP2000065165
申请日:2000-03-09
Applicant: IBM
Inventor: VARANASI PUSHKARA RAO , ALLEN ROBERT D , TOMAS I WOROU , JULIAN OPITZ , DEPIETRO RICHARD A , MARGARET C LAWSON , ANN MARIE MYUUHAATAA , JOSEPH F MANISCALCO , MAHAMUUDO EMU HOJISUTE , JORDHAMO GEORGE M , ITO HIROSHI
IPC: C08F232/00 , C08K5/00 , C08L45/00 , G03F7/004 , G03F7/039 , G03F7/11 , G03F7/38 , G03F7/40 , H01L21/027
Abstract: PROBLEM TO BE SOLVED: To obtain a photoresist composition using an acid as a catalyst, capable of forming an image with radiation of 193 nm and capable of forming a photoresist structure having high resolution and high etching resistance by development. SOLUTION: The photoresist composition comprises a combination of a cyclic olefin polymer, a photosensitive acid-generating agent and a substantially transparent bulky hydrophobic additive. The cyclic olefin polymer contains a cyclic olefin unit having a polar functional group which promotes dissolution in an aqueous alkali solution and the cyclic olefin unit having an acid-labile group which inhibits the dissolution in the aqueous alkali solution. The hydrophobic additive is selected from the group comprising a saturated steroid compound, a non-steroid cycloaliphatic compound and a non-steroid polycycloaliphatic compound having an acid-labile bond.
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公开(公告)号:SG90720A1
公开(公告)日:2002-08-20
申请号:SG200001282
申请日:2000-03-09
Applicant: IBM
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公开(公告)号:SG96547A1
公开(公告)日:2003-06-16
申请号:SG200001379
申请日:2000-03-10
Applicant: IBM
Inventor: PUSHKARA RAO VARANASI , ROBERT D ALLEN , THOMAS I WALLOW , JULIANN OPTIZ , RICHARD A DEPIETRO , MARGARET C LAWSON , ANN MARIE MEWHERTER , JOSEPH F MANISCALCO , GEORGE M JORDHAMO
IPC: C08K5/41 , G03F7/004 , G03F7/039 , H01L21/027
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公开(公告)号:MY126758A
公开(公告)日:2006-10-31
申请号:MYPI20000517
申请日:2000-02-15
Applicant: IBM
Inventor: PUSHKARA RAO VARANASI , JOSEPH F MANISCALCO , MARGARET C LAWSON , ANN MARIE MEWHERTER , MAHMOUD M KHOJASTEH , GEORGE M JORDHAMO , ROBERT D ALLEN , JULIANN OPITZ , HIROSHI ITO
Abstract: ACID-CATALYZED POSITIVE PHOTORESIST COMPOSITIONS WHICH ARE IMAGEABLE WITH 193 NM RADIATION AND ARE DEVELOPABLE TO FORM PHOTORESIST STRUCTURES OF HIGH RESOLUTION AND HIGH ETCH RESISTANCE ARE ENABLED BY THE USE OF A COMBINATION OF CYCLIC OLEFIN POLYMER, PHOTOSENSITIVE ACID GENERATOR AND BULKY HYDROPHOBIC ADDITIVE WHICH IS SUBSTANTIALLY TRANSPARENT TO 193 NM RADIATION. THE CYCLIC OLEFIN POLYMERS CONTAIN I) CYCLIC OLEFIN UNITS HAVING ACIDIC POLAR FUNCTIONAL MOIETIES THAT PROMOTE SOLUBILITY IN AQUEOUS ALKALINE SOLUTIONS, AND II) CYCLIC OLEFIN UNITS HAVING ACID LABILE MOIETIES THAT INHIBIT SOLUBILITY IN AQUEOUS SOLUTIONS.
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公开(公告)号:MY122873A
公开(公告)日:2006-05-31
申请号:MYPI20021340
申请日:2002-04-11
Applicant: IBM
Inventor: PUSHKARA RAO VARANASI , MARGARET C LAWSON , WENJI LI
IPC: G03F7/004 , G03F7/039 , H01L21/027
Abstract: ACID-CATALYZED POSITIVE RESIST COMPOSITIONS WHICH ARE IMAGEABLE WITH 193 NM RADIATION AND/OR POSSIBLY OTHER RADIATION AND ARE DEVELOPABLE TO FORM RESIST STRUCTURES OF IMPROVED DEVELOPMENT CHARACTERISTICS AND IMPROVED ETCH RESISTANCE ARE ENABLED BY THE USE OF RESIST COMPOSITIONS CONTAINING IMAGING POLYMER HAVING A MONOMER WITH A PENDANT GROUP CONTAINING PLURAL ACID LABILE MOIETIES. PREFERRED PENDANT GROUPS CONTAINING PLURAL ACID LABILE MOIETIES ARE CHARACTERIZED BY THE PRESENCE OF A BULKY END GROUP.
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