公开(公告)号：WO2006039907A2

公开(公告)日：2006-04-20

申请号：PCT/DE2005001816

申请日：2005-10-11

Applicant: INFINEON TECHNOLOGIES AG ,  DUESBERG GEORG ,  KREUPL FRANZ ,  SEIDEL ROBERT ,  STEINLESBERGER GERNOT

Inventor： DUESBERG GEORG ,  KREUPL FRANZ ,  SEIDEL ROBERT ,  STEINLESBERGER GERNOT

IPC: H01L51/40

CPC classification number: H01L51/0048 ,  B82Y10/00 ,  H01L51/0021

Abstract: The invention relates to an electrical circuit with at least one nanostructure and a carbon conductor track, said carbon conductor track being embodied by a layer essentially made from carbon, whereby the nanostructure and the carbon conductor track are in direct contact.

Abstract translation: 一种电路包括：至少一个纳米结构，和碳导体，它是由基本上由碳 - 碳层导体轨道的一个组，其中所述纳米结构和碳导体轨道直接接触的方式形成。

公开(公告)号：WO2005060000A3

公开(公告)日：2005-10-27

申请号：PCT/DE2004002739

申请日：2004-12-14

Applicant: INFINEON TECHNOLOGIES AG ,  KRETZ JOHANNES ,  KREUPL FRANZ ,  SPECHT MICHAEL ,  STEINLESBERGER GERNOT

Inventor： KRETZ JOHANNES ,  KREUPL FRANZ ,  SPECHT MICHAEL ,  STEINLESBERGER GERNOT

IPC: H01L21/336 ,  H01L21/8246 ,  H01L21/8247 ,  H01L21/84 ,  H01L27/115 ,  H01L27/12 ,  H01L29/786 ,  H01L29/792

CPC classification number: H01L29/7923 ,  H01L21/845 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11568 ,  H01L27/1211 ,  H01L29/66795 ,  H01L29/66833 ,  H01L29/785

Abstract: The invention relates to a bridge field-effect transistor storage cell comprising a first and second source/ drain areas and a channel area arranged therebetween which are formed in a semiconductor bridge. The inventive storage cell also comprises a charge-coupled layer which is disposed at least partially on the semiconductor bridge and a metal conductive gate area on at least one part of said charge-coupled layer which is arranged in such a way that electric charge carriers are selectively introducible or removable by applying a predetermined electric voltage to the bridge field-effect transistor storage cell.

Abstract translation: 鳍式场效应晶体管存储器单元包括第一和第二源/漏区和沟道区设置在其间，在半导体桥，其形成源极/漏极和沟道区。 该存储单元还包括在至少一个被布置成使得所述电荷存储层的部分，其至少部分地布置在所述半导体桥的电荷存储层，以及金属栅极导电区域中的预先确定的通过施加电势到鳍式场效应晶体管存储器单元的装置 被选择性地引入或在电荷存储层的电荷载流子除去。

公开(公告)号：DE102004031127A1

公开(公告)日：2006-01-19

申请号：DE102004031127

申请日：2004-06-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： GRAHAM ANDREW ,  STEINLESBERGER GERNOT

IPC: G01N27/22 ,  G01N33/50

Abstract: A biosensor has a substrate with a surface incorporating one or more electrodes under a carbon cover incorporating a trap module. The sensor forms part of a diagnostic electronic circuit determining the electrode capacity. The carbon layer is primarily diamond that insulates and renders the electrode passive. The carbon layer structure forms no electrical link between the electrodes. The electrodes are fabricated of electrically-conducting carbon. Also claimed is a manufacturing process for the sensor in a hydrogen atmosphere pressurised to between 1 and 4 hectopascals and at a temperature of between 600 and 1000[deg]C, and in the presence of a hydrocarbon gas, oxygen plasma and/or acid.

公开(公告)号：DE10351230B3

公开(公告)日：2005-03-10

申请号：DE10351230

申请日：2003-11-03

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ENGELHARDT MANFRED ,  STEINLESBERGER GERNOT ,  UNGER EUGEN

IPC: B01J23/745 ,  B01J23/755 ,  B01J37/03 ,  C01B31/02 ,  C23C18/16 ,  C23C18/31 ,  B82B3/00 ,  B01J23/74

Abstract: The selective and surface deposition of a catalyst for growing nanotubes on a strip conductor in an integrated circuit comprises preparing an acidic or alkaline aqueous solution of the catalyst, applying the solution on the strip conductor, and removing the excess solution.

公开(公告)号：DE10323905A1

公开(公告)日：2005-01-05

申请号：DE10323905

申请日：2003-05-26

Applicant: INFINEON TECHNOLOGIES AG

Inventor： STEINLESBERGER GERNOT ,  ENGELHARDT MANFRED ,  UNGER EUGEN

IPC: C23C18/31 ,  C23C28/02 ,  H01L21/288 ,  C25D3/38 ,  C25D7/12

公开(公告)号：DE102004050391B4

公开(公告)日：2007-02-08

申请号：DE102004050391

申请日：2004-10-15

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHINDLER GUENTHER ,  PAMLER WERNER ,  GABRIC ZVONIMIR ,  UNGER EUGEN ,  TRAVING MARTIN ,  STEINLESBERGER GERNOT ,  STICH ANDREAS

IPC: H01L21/768 ,  H05K3/00

Abstract: In a method for manufacturing a layer arrangement, a plurality of electrically conductive structures are embedded in a substrate. Material of the substrate is removed at least between adjacent electrically conductive structures. An interlayer is formed on at least one portion of sidewalls of each of the electrically conductive structures. A first layer is formed on the interlayer where an upper partial region of the interlayer remaining free of a covering with the first layer. An electrically insulating second layer is formed selectively on that partial region of the interlayer which is free of the first layer, in such a way that the electrically insulating second layer bridges adjacent electrically conductive structures such that air gaps are formed between adjacent electrically conductive structures.

公开(公告)号：DE102004049452A1

公开(公告)日：2006-04-20

申请号：DE102004049452

申请日：2004-10-11

Applicant: INFINEON TECHNOLOGIES AG

Inventor： STEINLESBERGER GERNOT ,  KREUPL FRANZ ,  DUESBERG GEORG STEFAN ,  HARTWICH JESSICA ,  DREESKORNFELD LARS

IPC: H01L29/78 ,  H01L21/336 ,  H01L29/43

Abstract: A microelectronic semiconductor element comprises at least one electrode comprising a carbon-containing layer. Preferably the element is a FET having a gate electrode and a source/drain electrode comprising the carbon-containing layer. An independent claim is also included for a production process for the above.

公开(公告)号：DE102004012044A1

公开(公告)日：2005-09-29

申请号：DE102004012044

申请日：2004-03-11

Applicant: INFINEON TECHNOLOGIES AG

Inventor： STEINLESBERGER GERNOT ,  KREUPL FRANZ

IPC: C23C16/26 ,  G01Q60/24 ,  G01Q60/38 ,  G01Q60/42 ,  G12B21/08

Abstract: A process for producing a carbon layer with a specific resistance less than 1mOhmcm and a hardness of 2-9Gpa, comprises precipitating the carbon layer. The substrate is in a hydrogen atmosphere with a pressure of 1-4 hectopascals and a temperature of 600-1000o>C. A gas containing carbon is added to form the carbon layer.

公开(公告)号：DE102005004366A1

公开(公告)日：2006-08-10

申请号：DE102005004366

申请日：2005-01-31

Applicant: INFINEON TECHNOLOGIES AG

Inventor： STEINLESBERGER GERNOT ,  STEINHOEGL WERNER ,  DUESBERG GEORG ,  SCHINDLER GUENTHER

IPC: H01L21/768

Abstract: The method involves applying an electrically insulating layer (72) on a planarized surface of an integrated switching arrangement after the application of an electro conductive nucleation layer (74) on the surface. The insulating layer is structured so that areas of the nucleation layer are laid open. An electro conductive material is galvanically deposited on the areas laid open.

公开(公告)号：DE102004049453A1

公开(公告)日：2006-04-20

申请号：DE102004049453

申请日：2004-10-11

Applicant: INFINEON TECHNOLOGIES AG

Inventor： DUESBERG GEORG STEFAN ,  KREUPL FRANZ ,  STEINLESBERGER GERNOT ,  SEIDEL ROBERT

IPC: B82B1/00 ,  B82B3/00 ,  H01B1/04 ,  H01L21/336 ,  H01L21/768 ,  H01L23/532 ,  H05K3/40

Abstract: A circuit is disclosed. The circuit includes at least one nanostructure and a carbon interconnect formed by a substantially carbon layer, wherein the nanostructure and the carbon interconnect are directly coupled to one another.