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公开(公告)号：DE102008016487A1
公开(公告)日：2009-10-01
申请号：DE102008016487
申请日：2008-03-31
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： WEGLEITER WALTER , WIRTH RALPH , BARCHMANN BERND
IPC: H01L31/101 , H01L31/0232 , H01L33/44 , H01L33/56
Abstract: An optoelectronic semiconductor component includes a connection support with a connection side, at least one optoelectronic semiconductor chip mounted on the connection side and electrically connected to the connection support, an adhesion-promoting intermediate film applied to the connection side and covering the latter at least in selected places, and at least one radiation-transmissive cast body which at least partially surrounds the semiconductor chip, the cast body being connected mechanically to the connection support by the intermediate film.
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公开(公告)号：DE102007059548A1
公开(公告)日：2009-04-02
申请号：DE102007059548
申请日：2007-12-11
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： WIRTH RALPH , BARCHMANN BERND
IPC: G02B3/00 , H01L25/075 , H01L33/50 , H01L33/64
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公开(公告)号：DE102007043681A1
公开(公告)日：2009-03-26
申请号：DE102007043681
申请日：2007-09-13
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： EISSLER DIETER , OBERSCHMID RAIMUND , WIRTH RALPH
Abstract: An opto-electronic component is provided, comprising an electrically conductive substrate (1) having a top side (2) and a bottom side (3), wherein the top side is electrically connected to a first contact (4) and the bottom side is electrically connected to a second contact (5) having opposing poles, and wherein a light-emitting p-n junction (6) is disposed between the contacts on the top side of the substrate, wherein the component has an arrester body (7) for discharging power surges, which is electrically connected in parallel to the p-n junction.
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公开(公告)号：DE102007025092A1
公开(公告)日：2008-12-04
申请号：DE102007025092
申请日：2007-05-30
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： STREUBEL KLAUS , WIRTH RALPH
Abstract: A luminescent diode chip includes a semiconductor body, which produces radiation of a first wavelength. A luminescence conversion element produces radiation of a second wavelength from the radiation of the first wavelength. An angular filter element reflects radiation that impinges on the angular filter element at a specific angle in relation to a main direction of emission back in the direction of the semiconductor body.
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公开(公告)号：DE102007001533A1
公开(公告)日：2008-07-17
申请号：DE102007001533
申请日：2007-01-10
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： WIRTH RALPH
Abstract: The light emitting diode system has at least one light emitting diode component with an accommodation recess (2) extending in a supporting rail (1) in the longitudinal direction relative to the supporting rail and designed to accommodate at least one light emitting diode component and at least two contact tracks (16,18) extending in the longitudinal direction and arranged to electrically contact the at least one light emitting diode component.
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Patent Agency Ranking
公开(公告)号：DE102005061797A1
公开(公告)日：2007-07-05
申请号：DE102005061797
申请日：2005-12-23
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： STREUBEL KLAUS , WIRTH RALPH , HAHN BERTHOLD , AHLSTEDT MAGNUS , ALBRECHT TONY , ILLEK STEFAN
Abstract: A luminescence diode chip has a semiconductor layer sequence suitable for generation of electromagnetic radiation, and at least one current barrier which is formed of semiconductor material of the epitaxial semiconductor layer sequence and of material of the current expansion layer and/or by a boundary surface between the semiconductor layer sequence and the current expansion layer. An independent claim is included for a method for fabricating a luminescence diode chip.
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公开(公告)号：DE102005046190A1
公开(公告)日：2007-04-05
申请号：DE102005046190
申请日：2005-09-27
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： WALTER ROBERT , AHLSTEDT MAGNUS , EISSLER DIETER , WIRTH RALPH
Abstract: Semi-conductor unit has semi-conductor base (10) at least partly laid on a current expansion layer (3). Layer contains metal (1) which forms a transparent conductive metal oxide (2). The concentration of metal decreases moving from the side of the expansion layer facing the semi-conductor base to the side of the layer turned away from the semi-conductor base. Method to make semi-conductor part involves firstly putting on metal layer on the base, secondly putting on a metal oxide on the metal layer and lastly heat treating the layers to produce the current expansion layer.
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公开(公告)号：DE102005008056A1
公开(公告)日：2006-07-13
申请号：DE102005008056
申请日：2005-02-22
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： WIRTH RALPH
Abstract: The semiconductor chip is produced with a number of semiconductor layers [2] that has at least one active layer that produces electromagnet emissions [9]. A transparent contact oxide, TCO, [3] is formed between the semiconductor layers and a brightness control layer [4] and absorbs part of the emission. A bond pad [12] is on the surface.
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公开(公告)号：DE102004046792A1
公开(公告)日：2006-04-13
申请号：DE102004046792
申请日：2004-09-27
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： STREUBEL KLAUS , WIRTH RALPH
Abstract: An optoelectronic thin-film chip is specified, comprising at least one radiation-emitting region (8) in an active zone (7) of a thin-film layer (2) and a lens (10, 12) disposed downstream of the radiation-emitting region (8). The lens is formed by at least one partial region of the thin-film layer (2), the lateral extent (Φ) of the lens (10, 12) being greater than the lateral extent of the radiation-emitting region (δ). A method for producing such an optoelectronic thin-film chip is furthermore specified.
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公开(公告)号：DE10306779A1
公开(公告)日：2004-07-22
申请号：DE10306779
申请日：2003-02-18
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： ZULL HERIBERT , WIRTH RALPH , WINDISCH REINER
IPC: H01L21/033 , H01L21/308 , H01L33/22 , B81C1/00 , H01L33/00
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