公开(公告)号：JPH06343260A

公开(公告)日：1994-12-13

申请号：JP4305994

申请日：1994-02-17

Applicant: SGS THOMSON MICROELECTRONICS ,  CONS RIC MICROELETTRONICA

Inventor： ROBERUTO GARIBORUDEI ,  FURANCHIESUKO PURUBIRENTEI

IPC: G11C11/407 ,  G11C16/06 ,  G11C17/00 ,  H02M3/07

Abstract: PURPOSE: To eliminate a trouble of the conventional charging pump circuit, by replacing a diode with another element so as to prevent a voltage drop caused by the diode. CONSTITUTION: Two charge transfer devices connected in parallel, such as a pair of complementary transistors M5 and M6 as a switch, are connected between a supply node (VCC) and an output node (GND) in a circuit. As a result, a decrease in output voltage equal to a voltage drop caused by a diode in a conventional circuit can be prevented.

公开(公告)号：JPH06334189A

公开(公告)日：1994-12-02

申请号：JP9999894

申请日：1994-05-13

Applicant: CONS RIC MICROELETTRONICA

Inventor： RAFUAERU ZANBURANO

IPC: H01L27/06 ,  H01L27/02 ,  H01L27/04 ,  H01L27/08 ,  H01L29/78 ,  H01L29/784

Abstract: PURPOSE: To reduce waste of a region to a minimum by a method, wherein a current sensing resistor of an integrated structure consists of a doped-region, which extends from the deep body region of at least one piece of the cell of first cells to the deep body region of the cell, which corresponds to the above cell, of second cells. CONSTITUTION: A power MOS device, such as an N-channel MOSFET, is constituted of a plurality of cells 1a, and a plurality of cells 1b and all of these cells are provided with a highly-doped P deep body region 2. The P deep body region 2 of at least one piece of the cell 1a of the main power MOSFET is extendedly provided for annexing the deep body region 2 of the cell 1a to the P deep body region 2 of the cell 1b, which corresponds to the deep body region 2 of the cell 1a, of a sensing MOSFET, extending to deep body regions 20 obtained in such a way as to come into contact with each other on the sides opposite to each other by source electrodes Sa and Sb. Such electrodes Sa and Sb are electrically connected with each other by the extended deep body regions 20, and a sensing resistor R is introduced in the series-connection of the source electrodes Sa and Sb to source electrodes Sb of the sensing MOSFET.

公开(公告)号：JPH06151723A

公开(公告)日：1994-05-31

申请号：JP17696292

申请日：1992-07-03

Applicant: CONS RIC MICROELETTRONICA

Inventor： RAFUAEERU ZANBURANO

IPC: H01L27/06 ,  H01L21/331 ,  H01L27/082 ,  H01L29/73 ,  H01L29/732

Abstract: PURPOSE: To prevent the operation of a parasitic transistor by a method, wherein a resistance value between the insulation terminal and base of the parasitic transistor and the current gain of the parasitic transistor are minimized, when a monolithic semiconductor device is used. CONSTITUTION: A 1st conductivity-type 4th region 8, which is formed in a 3rd region 4 and functions as a base region and a circular geometry along boundaries between a 2nd conductivity-type 5th region 12, which is formed in the 4th region 8 and functions as a collector region and a 2nd conductivity type 6th region 11, formed in the 4th region 8 and functions as an emitter region and the 4th region 8 are provided. Further, a 1st conductivity-type 7th region 10, which is doped to have an impurity concentration higher than that of the 4th region 8 having a channel stop function, is provided.

公开(公告)号：JPH0661393A

公开(公告)日：1994-03-04

申请号：JP10674492

申请日：1992-04-24

Applicant: CONS RIC MICROELETTRONICA

Inventor： MARUKANTONIO MANJIAGURU ,  ROZARIO POGURIEZE

IPC: H01L23/48 ,  H01L23/495

Abstract: PURPOSE: To perform capsule sealing into a resin, perform insulation completely, and stand at least AC 2,250 V by setting the minimum distance of a gap between a central conductor section closest to a covering and the side part conductor section between two continuous curved parts to a clearance distance or less. CONSTITUTION: External conductors 28 and 29 indicate two curved parts that are nearly at right angle near a plastic covering 21, the curved parts have their terminal parts on surfaces that are in parallel with a heat dissipation equipment 26, and a surface where the terminal part of a conductor 27 is located is directed toward the heat dissipation equipment and is located at a distance that is longer than a distance being expressed. Then, a distance between curved parts at the right angle of the same one side edge parts is properly selected, thus preventing the distance between the edge of the central conductor 27 and the edges of side part conductors 28 and 29 from being lower than a limit that is applied to a clearance distance with the maximum withstand voltage, thus obtaining a semiconductor device that can completely satisfy the international standard and can withstand a high voltage.

公开(公告)号：JPH0645596A

公开(公告)日：1994-02-18

申请号：JP7441493

申请日：1993-03-31

Applicant: CONS RIC MICROELETTRONICA

Inventor： ZAMBRANO RAFFAELE

IPC: H01L29/78 ,  H01L21/331 ,  H01L27/06 ,  H01L29/73 ,  H01L29/732 ,  H01L29/735 ,  H01L29/784

Abstract: PURPOSE: To provide an integrated current-limiting device for a power MOS transistor, and a process for manufacturing the device. CONSTITUTION: A bipolar control transistor, constituting a part of an integrated current-limiting device, contains the following: second-type base regions 3, 4, 5, 7 which are approachable from a base contact, inside an epitaxial layer 2 on a first-type substrate 1, and regions of a first-type collector 5 and a first- type emitter 8 which are contained in the base regions. The base regions 3, 4, 5, 7 consist of at least a deep main region 3 which contains the region 8 and is doped with high concentration, a main region 5 which contains a region 6 and is doped with low concentration, the region 7 which contains completely the emitter region 8 and is doped with middle concentration, and a surface region 9 of the base regions 3-7, which are contained in the region between the regions 6 and 8.

公开(公告)号：JPH065866A

公开(公告)日：1994-01-14

申请号：JP6763491

申请日：1991-03-08

Applicant: CONS RIC MICROELETTRONICA

Inventor： SESARE RONSHISUBAARE

IPC: H01L29/78 ,  H01L21/331 ,  H01L21/336 ,  H01L29/06 ,  H01L29/08 ,  H01L29/40 ,  H01L29/739 ,  H01L29/784

Abstract: PURPOSE: To form a device with a high breakdown voltage in an inverse direction by forming a top-bottom side part separation region, allowing the side part of an anode junction to be bounced upwards, and covering the termination part of the surface region of a chip with SiO2 layer and a metallic layer that constitutes the electric field plate of a device successively. CONSTITUTION: A silicon thin film 2 is subjected to epitaxial growth on a single- crystal silicon substrate 1 of P . Silicon is subjected to thermal oxidation treatment, thus forming SiO2 layer 3. The SiO2 oxide layer 3 is eliminated along a side frame 4, and B is injected. The B is diffused, a region 5 is formed, and then the surface oxide layer 3 is eliminated. A silicon layer 6, in which P is doped, is subjected to epitaxial growth. The B is injected during this process, and a diffused side part region 5 is also diffused upwards. The silicon is subjected to a thermal oxidation treatment, and SiO2 layer 7 is formed. The B is injected to a frame 8 at a position corresponding to the frame 4, before an oxidation diffusion treatment. The part where B is injected is diffused and becomes one part with the region 5 that is located at a lower side, and a top and a bottom are isolated, thus forming a device.

公开(公告)号：EP0620646B1

公开(公告)日：1997-12-29

申请号：EP93830159

申请日：1993-04-09

Applicant: ST MICROELECTRONICS SRL ,  CONS RIC MICROELETTRONICA

Inventor： MILAZZO PATRIZIA ,  BONTEMPO GREGORIO ,  ALZATI ANGELO

IPC: H03F1/02 ,  H02M1/08 ,  H03F3/21 ,  H03K17/00 ,  H03K17/0412 ,  H03K17/687 ,  H03K17/56 ,  H03K19/0175

CPC classification number: H03K17/6877 ,  H02M1/08 ,  H03K17/04123 ,  H03K2217/0036

公开(公告)号：DE69734871D1

公开(公告)日：2006-01-19

申请号：DE69734871

申请日：1997-05-30

Applicant: ST MICROELECTRONICS SRL ,  CONS RIC MICROELETTRONICA

Inventor： LOMBARDO SALVATORE ,  PINTO ANGELO ,  NICOTRA MARIA CONCETTA

IPC: H01L29/73 ,  H01L21/265 ,  H01L21/331 ,  H01L29/165 ,  H01L29/732 ,  H01L29/737

公开(公告)号：DE69533773D1

公开(公告)日：2004-12-23

申请号：DE69533773

申请日：1995-03-31

Applicant: CONS RIC MICROELETTRONICA

Inventor： ZAMBRANO RAFFAELE

IPC: H01L29/73 ,  H01L21/331 ,  H01L21/76 ,  H01L21/762 ,  H01L21/763 ,  H01L21/8222 ,  H01L21/8234 ,  H01L27/06 ,  H01L27/082 ,  H01L27/088 ,  H01L29/732 ,  H01L29/78

Abstract: A novel process for forming, on a semiconductor substrate, a dielectric isolation structure between two zones of an integrated circuit wherein active regions of electronic components integrated thereto have already been defined, comprises the steps of: defining an isolation region (45) on a layer of silicon oxide (42) overlying a silicon layer (41); selectively etching the silicon (41) to provide the isolation region (45); growing thermal oxide (43) over the interior surfaces of the isolation structure (45); depositing dielectric (46) conformingly; and oxidizing the deposited dielectric (46).

公开(公告)号：DE69433965D1

公开(公告)日：2004-09-30

申请号：DE69433965

申请日：1994-10-26

Applicant: CONS RIC MICROELETTRONICA

Inventor： FALLICO GIUSEPPE ,  ZAMBRANO RAFFAELE

IPC: H01L29/735 ,  H01L21/331

Abstract: A high-frequency lateral PNP transistor presenting a base region (63') laterally delimited by P type emitter (68) and collector (69) regions, and at the top by a surface portion (67) of the N type semiconductor body (63) housing the active area of the transistor. The surface portion (67) delimiting the base region (63') presents no formations of insulating material grown across the surface, so that the width (WB) of the base region (63') is reduced and ensures optimum dynamic characteristics of the transistor. The base contact (80, 82) may be located directly over the surface portion facing the base region (63'), to reduce the extrinsic base resistance and overall size of the device, or it may be located remotely and connected to the base region by a buried layer (62) and sinker region (88) to further reduce the base width.