Abstract:
본 발명은 태양전지 광활성층의 제조방법에 관한 것으로, 상세하게, 본 발명의 제조방법은 a) 11족 금속의 제1칼코젠화합물 및 상기 제1칼코젠화합물보다 낮은 융점을 갖는 11족 금속의 제2칼코젠화합물이 단일한 입자 내에 혼재된 복합 입자 및 12족 내지 14족에서 하나 또는 둘 이상 선택된 원소의 제3칼코젠화합물을 함유하는 잉크를 기판에 도포하여 도포막을 형성하는 단계; 및 b) 상기 도포막을 열처리하여 구리 및 12족 내지 14족에서 하나 또는 둘 이상 선택된 원소의 다원 칼코젠화합물 막을 제조하는 단계를 포함한다.
Abstract:
PURPOSE: Ink is provided to produce a semiconductor compound based photoactive layer in a single phase by a low temperature heat-processing at a temperature lower than 550°C, which is a process allowable temperature. CONSTITUTION: Ink contains the following: a composite particle which contains a first chalcogen compound of 11th group, and a second chalcogen compound of the 11th group with the lower melting point than the first chalcogen compound; and a precursor of more than one element selected from 12-14th group. The melting point of the second chalcogen compound is 220-550°C. A production method of a solar cell photoactive layer comprises a step of forming a coating film by coating the ink on a substrate, and a step of heat-processing the coating film.
Abstract:
PURPOSE: A manufacturing method of a photoactive layer is comprises to be able to manufacture multi-source chalcogen compound (a photoactive layer) with high quality through simple, safe and convenient processes, or to be able to manufacture a photoactive layer made of coarse grains, having an excellent compositional stability and uniformity, and an elaborate fine structure. CONSTITUTION: Ink includes composite particles in which a first chalcogen compound of a metal of group 11, and a second chalcogen compound of a metal of group 11, which has a lower melting point than the first chalcogen compound, are mixed in a single particle; and a third chalcogen compound of one or more than two selected from group 12-14. A manufacturing method of a photoactive layer for a solar cell comprises (i) a step of forming a coated film by coating the ink on a substrate; and (ii) a step of manufacturing a multi-source chalcogen compound film of a metal of group 11, and one or more than two elements selected from group 12-14, by heat-treating the coated film.
Abstract:
PURPOSE: A method for manufacturing a Cl(G)S thin film by a Se low temperature deposition heat treatment is provided to obtain a high electric property by densifying the Cl(G)S thin film. CONSTITUTION: Se is deposited on a thin film including Cl(G)S sample heated at 60 to 150 degrees centigrade. A thin film including the Cl(G)S sample with Se is thermally treated at 300 to 600 degrees centigrade. The Cl(G)S sample includes a precursor which is transformed into Cl(G)S materials or Cl(G)S. [Reference numerals] (AA) Depositing Se vapor on the surface and the inner side of Cl(G)S sample including a precursor which is transformed into Cl(G)S materials or Cl(G)S at 60°C~150°C; (BB) Additionally thermally processing Se deposited Cl(G)S sample at 300°C~600°C by controlling steam pressure; (CC) Cooling at room temperature
Abstract:
PURPOSE: A method for manufacturing low temperature water-based copper-indium-(gallium-)selenide(CuIn_xGa_1-xSe_2) nano particles is provided to use carboxylic acid derivative in order to be eco-friendly implemented. CONSTITUTION: A copper complex is prepared by reacting a copper compound and carboxylic acid derivative, represented by chemical formula 1, in an aqueous solvent. A selenium compound is introduced into the copper complex solution, and a copper-selenium complex is prepared. An indium compound is introduced into a copper-selenium complex solution. Copper-indium-(gallium-)selenium nano particles are prepared.
Abstract:
A method for measuring speed of an ink drop in an ink jet printer is provided to maximize productivity by processing of a one-dimensional line which is different with a conventional method measuring the speed of the ink drop through a second-dimensional plane image processing. A method for measuring speed of an ink drop in an ink jet printer comprises the following steps of: taking a picture of the ink drop sprayed from a printer header; storing a photographed image in a computer; designating a desired part including the ink drop among the stored images to a line; detecting an edge of the ink drop; performing image processing on a selected ink drop; and measuring the speed of the ink drop after image processing.
Abstract:
본 발명은 압타머를 이용한 탄소 나노튜브 트랜지스터 바이오센서 및 이것을 이용한 타겟물질(단백질) 검출 방법을 제공하고자 한 것이다. 특히, 본 발명은 탄소나노튜브 트랜지스터의 채널영역을 구성하고 있는 탄소나노튜브 표면에 프로브 물질로서, 단백질에 높은 친화력을 가지는 DNA 핵산가닥인 압타머(Aptamer)를 흡착 고정시킴으로써, 이 압타머에 특정 타겟물질이 노출되었을 때 나타나는 탄소나노튜브의 전기적인 변화로 압타머와 특이적으로 결합하는 타겟(target)물질 즉, 특정분자(단백질, 펩티드, 아미노산, 유/무기화합물 등)의 검출이 가능한 압타머 및 탄소나노튜브 트랜지스터를 이용한 바이오센서 및 이것을 이용한 타겟물질 검출 방법을 제공하고자 한 것이다. 탄소나노튜브 트랜지스터, 압타머, 바이오센서, 단백질, 피렌, 전기전도도 변화
Abstract:
A semiconductor nano device is provided to improve sensitivity of a gas sensor and to reduce sensor size by coating metal nano particles on a surface of a carbon nanotube transistor. An alignment marker is formed on a SiO2/Si substrate(10). A pattern of liquid catalyst is manufactured using a PMMA(polymethylmethacrylate) layer on the SiO2/Si substrate that is insulated by a SiO2 layer. The PMMA layer is removed by an acetone solution. A single walled carbon nanotube(14) is grown at CH4 and H2 atmosphere during 10 minutes in a furnace of 900 ‹C. An electrode(12) is formed by performing photolithography and thermal evaporation on the carbon nanotube, thereby configuring a carbon nanotube transistor. A metal nano particle(16) is coated on a surface of the carbon nanotube transistor.
Abstract:
본 발명은 마이크로 에멀젼과 채널 반응기를 이용한 금속 또는 반도체 나노입자의 제조방법에 관한 것으로서, 더욱 상세하게는 채널의 직경을 1 ∼ 10 ㎜ 범위인 반응기를 사용하여 종래 채널 반응기의 좁은 직경으로 인한 유로의 막힘 현상을 해소하고, 또한 상기 큰 직경의 채널 반응기 사용으로 인한 나노입자 크기 및 입도 분포의 제어가 용이하지 못한 문제를 유입되는 금속 또는 반도체의 전구체의 액적 크기를 특정 범위로 제한한 마이크로 에멀젼 형태로 연속적으로 유입하는 일련의 연속공정으로, 입도 분포가 좁은 나노크기의 입자를 형성하면서 동시에 유로 공간의 확보되어 효율적으로 연속 대량 공정의 수행이 가능한 마이크로 에멀젼과 채널 반응기를 이용한 금속 또는 반도체 나노입자의 제조방법에 관한 것이다. 마이크로 에멀젼, 채널 반응기, 연속 대량 공정, 금속 또는 반도체 나노입자