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    Thin film resonators fabricated on membranes created by front side releasing
    115.
    发明公开
    Thin film resonators fabricated on membranes created by front side releasing 有权
    生产薄膜谐振器的通过底层膜的顶表面的自由蚀刻

    公开(公告)号：EP1180494A2

    公开(公告)日：2002-02-20

    申请号：EP01306284.9

    申请日：2001-07-20

    Applicant: Agere Systems Guardian Corporation

    Inventor： Chan, Edward ,  Kim, Jungsang ,  Huggins, Harold Alexis ,  Soh, Hyongsok

    IPC: B81B3/00 ,  H03H9/17

    CPC classification number: H03H9/173 ,  B81B2201/0271 ,  B81C1/00142 ,  B81C2201/014 ,  H03H3/02 ,  H03H2003/021

    Abstract: A new bulk resonator may be fabricated by a process that is readily incorporated in the traditional fabrication techniques used in the fabrication of monolithic integrated circuits on a wafer. The resonator is decoupled from the wafer by a cavity etched under the resonator using selective etching through front openings (vias) in a resonator membrane. In a typical structure the resonator is formed over a silicon wafer by first forming a first electrode, coating a piezoelectric layer over both the electrode and the wafer surface and forming a second electrode opposite the first on the surface of the piezoelectric layer. After this structure is complete, a number of vias are etched in the piezoelectric layer exposing the surface under the piezoelectric layer to a selective etching process that selectively attacks the surface below the piezoelectric layer creating a cavity under the resonator.

    VERFAHREN ZUR BEARBEITUNG VON SILIZIUM MITTELS ÄTZPROZESSEN
    116.
    发明公开
    VERFAHREN ZUR BEARBEITUNG VON SILIZIUM MITTELS ÄTZPROZESSEN 审中-公开
    一种用于处理硅通过蚀刻工艺

    公开(公告)号：EP1062180A1

    公开(公告)日：2000-12-27

    申请号：EP99955752.3

    申请日：1999-09-22

    Applicant: ROBERT BOSCH GMBH

    Inventor： BECKER, Volker ,  LAERMER, Franz ,  SCHILP, Andrea

    IPC: B81B3/00

    CPC classification number: H01L21/30655 ,  B81C1/00571 ,  B81C2201/014

    Abstract: The invention relates to a method for etching a first silicon layer (15) which is provided with an etching mask (10) for defining lateral recesses (21). Trenches (21') are produced in the area of the lateral recesses (21) in a first plasma etching process by means of anisotropic etching. As soon as a barrier layer (12, 14, 14', 16) buried between the first silicon layer (15) and another silicon layer (17) is reached, the first etching process virtually comes to a stop (17). This barrier layer is then etched through in the exposed areas (23, 23') using a second etching process. An etching of the other silicon layer (17, 17') is then effected in a subsequent third etching process. This enables the production of free-standing structures for sensor elements using a simplified process which is fully compatible with the process steps in IC integration technology.

    Process for manufacture of micro electromechanical devices having high electrical isolation
    117.
    发明公开
    Process for manufacture of micro electromechanical devices having high electrical isolation 有权
    维尔法赫尔·赫斯特伦·冯·米克罗

    公开(公告)号：EP0955668A2

    公开(公告)日：1999-11-10

    申请号：EP99109110.9

    申请日：1999-05-07

    Applicant: Rockwell Science Center, LLC

    Inventor： Yao, Jun J. ,  Anderson, Robert J.

    IPC: H01L21/00

    CPC classification number: B81C1/00484 ,  B81B2203/0118 ,  B81C2201/0108 ,  B81C2201/014 ,  B81C2201/019

    Abstract: The present invention relates to a fabrication process for manufacture of micro electromechanical (MEM) devices such as cantilever support beams. This fabrication process requires only two lithographic masking steps and offers moveable electromechanical devices with high electrical isolation. A preferred embodiment of the process uses electrically insulating glass substrate (102) as the carrier substrate and single crystal silicon (108) as the MEM component material.
    The process further includes deposition of an optional layer of insulating material (110) such as silicon dioxide on top of a layer of doped silicon (108) grown on a silicon substrate. The silicon dioxide (110) is epoxy bonded to the glass substrate (102) to create a silicon-silicon dioxide-epoxy-glass structure (200). The silicon is patterned using anisotropic plasma dry etching techniques. A second patterning then follows to pattern the silicon dioxide layer (110) and an oxygen plasma etch is performed to undercut the epoxy film (120) and to release the silicon MEM component. This two-mask process provides single crystal silicon MEMs with electrically isolated MEM component. Retaining silicon dioxide insulating material (110) in selected areas mechanically supports the MEM component.

    Abstract translation: 本发明涉及用于制造诸如悬臂支撑梁的微机电（MEM）装置的制造工艺。 该制造工艺仅需要两个光刻掩模步骤，并提供具有高电绝缘性的可移动机电装置。 该方法的优选实施例使用电绝缘玻璃基板（102）作为载体基板和单晶硅（108）作为MEM部件材料。 该方法还包括在硅衬底上生长的掺杂硅层（108）的顶部上沉积任选的绝缘材料层（例如二氧化硅）层。 二氧化硅（110）环氧键合到玻璃基板（102）上以产生硅 - 二氧化硅 - 环氧 - 玻璃结构（200）。 使用各向异性等离子体干蚀刻技术将硅图案化。 然后进行第二图案化以对二氧化硅层（110）进行图案化，并且执行氧等离子体蚀刻以削去环氧膜（120）并释放硅MEM组分。 该双掩模工艺提供具有电隔离的MEM组分的单晶硅MEM。 在选定区域保持二氧化硅绝缘材料（110）机械地支撑MEM部件。

    Vibrating beam accelerometer and method for manufacturing the same
    118.
    发明公开
    Vibrating beam accelerometer and method for manufacturing the same 失效
    Schwingstabbeschleunigungsmesser und Methode zu seiner Herstellung

    公开(公告)号：EP0840128A1

    公开(公告)日：1998-05-06

    申请号：EP97115499.2

    申请日：1997-09-08

    Applicant: AlliedSignal Incorporated

    Inventor： Woodruff, James R.

    IPC: G01P15/10 ,  G01P15/08

    CPC classification number: B81B3/0081 ,  B81B2201/0235 ,  B81C2201/014 ,  B81C2201/019 ,  G01P1/023 ,  G01P15/0802 ,  G01P15/097 ,  G01P2015/0814 ,  G01P2015/0828

    Abstract: The apparatus of the present invention includes a substrate (32) and a thin active layer (31) each comprising a semiconducting material. The substrate has a frame and a proof mass (18) suspended from the frame by one or more flexures (14,16), and the active layer includes one or more vibratory force transducers (22,24) suitable coupled to the proof mass (18) for detecting a force applied to the proof mass. According to the present invention, an insulating layer (34), such as silicon oxide, is formed between the substrate (32) and the active layer (31) to insulate the active layer from the substrate. Providing a separate insulating layer (34) between the substrate (32) and active layer (31) improves the electrical insulation between the proof mass and the transducers, which allows for effective operation over a wide range of temperatures.

    Abstract translation: 本发明的装置包括每个包括半导体材料的衬底（32）和薄的有源层（31）。 衬底具有通过一个或多个挠曲件（14,16）从框架悬挂的框架和检验质量块（18），并且有源层包括一个或多个适合耦合到校验块的振动力换能器（22,24） 18），用于检测施加到检验质量块的力。 根据本发明，在衬底（32）和有源层（31）之间形成诸如氧化硅的绝缘层（34），以使有源层与衬底绝缘。 在衬底（32）和有源层（31）之间提供单独的绝缘层（34）改善了校准质量块和换能器之间的电绝缘，这允许在宽的温度范围内有效地操作。

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