公开(公告)号：JPH08148507A

公开(公告)日：1996-06-07

申请号：JP31538794

申请日：1994-12-19

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： RI KEIKOU ,  BEI INKEI ,  KATA HIROKI ,  KIN KEISHIYU

IPC: H01L29/812 ,  H01L21/285 ,  H01L21/335 ,  H01L21/338

Abstract: PURPOSE: To contribute to high-density integration by reducing a gap between a gate and an ohmic electrode and by reducing a source resistance of a component. CONSTITUTION: Insulation films 104, 105 are vapor-deposited on the surface of a substrate at a first temperature (T1) and a second temperature (T2) (T1>T2), and dry etching is made selectively. Since the second insulation layer 105, which forms an upper layer, has a higher etching rate than the first insulation layer 104 which forms a lower layer, when etching of the first insulation layer 104 is completed and a portion of the substrate which corresponds to a gate is exposed, an excessive etching of the side faces of the second insulation film 105 is started to define a T-shaped space. A T-shaped gate electrode is formed using this space.

公开(公告)号：JPH0864519A

公开(公告)日：1996-03-08

申请号：JP31386094

申请日：1994-12-16

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： BOKU HEIZEN ,  GO YOUKO ,  SAI SOUSHIYU ,  YU KEISHIYUN

IPC: G03F1/20 ,  G03F1/54 ,  G03F1/70 ,  G03F1/80 ,  H01L21/027 ,  H01L21/28 ,  H01L21/338 ,  H01L29/812 ,  G03F1/08

Abstract: PURPOSE: To provide a resist pattern for forming a T-shaped gate and a producing method therefor, with which reproducibility in processes can be secured, and time and costs for forming the gate can be saved. CONSTITUTION: A resist pattern is composed of a transparent mask pattern 1 for forming a pattern at the leg section of electrode on the T-shaped gate and semitransparent mask patterns 3 and 3a for forming the head section of electrode on the T-shaped gate adjacently to that pattern 1. The semitransparent mask pattern is formed from a chrome layer or the like but, when this is formed from the chrome layer, it is formed thinner than the thickness of non-transparent mask patterns 2 and 2a so as to have low light transmissivity.

公开(公告)号：JPH07326657A

公开(公告)日：1995-12-12

申请号：JP30509794

申请日：1994-12-08

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： RI KIYOUNSHIYUU

IPC: B65D85/86 ,  H01L21/205 ,  H01L21/22 ,  H01L21/673 ,  H01L21/68

Abstract: PURPOSE: To provide a cassette for mounting a wafer in a semiconductor device manufacturing apparatus capable of inserting various sizes of wafers within a predetermined range without limitation of the size of the wafer. CONSTITUTION: A conventional cassette for mounting a wafer suffers from a trouble where when wafers of different sizes are treated, all tools in a manufacturing apparatus must be replaced. The wafer is constructed with at least two or more of suspension boards having an end flange 11 being a plurality of wafer reception stepped end surfaces and fixing means of the suspension board for supporting the suspension board 10.

公开(公告)号：JPH07321100A

公开(公告)日：1995-12-08

申请号：JP28383394

申请日：1994-11-17

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： KIN SEIFUKU ,  BOKU SEICHIYUU ,  RO SHIYOURAI ,  RI KAZUTSUNE

IPC: H01L29/06 ,  H01L21/20 ,  H01L21/302 ,  H01L21/306 ,  H01L21/308

Abstract: PURPOSE: To manufacture a gallium arsenide substrate having high density V-shaped trenches, by etching the parts where Si3 N4 is not formed in the gallium arsenide substrate by using sulfuric acid based etching solution, in such a manner that the (111) face is exposed, and selectively growing a gallium arsenide thin film. CONSTITUTION: An Si3 N4 film having a specified pattern corresponding to the minimum line width is formed on a gallium arsenide substrate 10. The parts where Si3 N4 is not formed in the gallium arsenide substrate 10 are etched by using sulfuric acid based etching solution, in such a manner that the (111) face is exposed. A gallium arsenide thin film is selectively grown on the substrate etched by sulfuric acid based etching solution. After that, the Si3 N4 film is eliminated.

公开(公告)号：JPH07203495A

公开(公告)日：1995-08-04

申请号：JP28219694

申请日：1994-11-16

Applicant: KOREA ELECTRONICS TELECOMM ,  KOREA TELECOMMUNICATION

Inventor： RIYU CHIYAN HOYON ,  RI BOYON SON ,  KIMU YON SHI

IPC: H04M3/36 ,  H04M7/00 ,  H04Q1/30 ,  H04Q3/545

Abstract: PURPOSE: To obtain continuously stable services while minimizing the loss of the services in an over load of a processor through the judgment and control of the over load. CONSTITUTION: Host processors 2, 3, and 4 communicate the occurrence of an over load, the increase of call suppression, the decrease of call control, and the release of the over load to all related low level processors 1 at the time of controlling the over load. The low level processors automatically calculate the number of calls to be processed in response to the requests of the host processors, and adjust the traffic affecting the host processors in order to maintain a stable service state in an over load control block.

公开(公告)号：JPH07202681A

公开(公告)日：1995-08-04

申请号：JP28227094

申请日：1994-11-16

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： KIMU JIN OPU ,  KIMU SON YON ,  RI ZOMU DO

IPC: H03K19/20 ,  H03K19/082 ,  H03K19/094 ,  H03K19/21

Abstract: PURPOSE: To obtain a binary-multivalued OR computing element having simple circuit constitution by providing a computing element with a means for selecting either one of a multivalued logic signal and the maximum value of the multivalued logic signal in accordance with a binary logic signal value and outputting the selected value. CONSTITUTION: An arithmetic adder 4 inputs many binary logic values 1, 2,..., K, executes arithmetic addition and outputs a multivalued logic value to a switch 3. When a binary signal inputted to a control terminal is '0', the switch 3 selects a multivalued logic value, and when the binary signal is '1', the switch 3 selects and outputs a maximul logic value inputted from a multivalued-signal maximum value input line. This arrangement including an OR operating function between binary values also allows direct OR operation between a multivalued logic value and a binary logic value, so that the binary-multivalued OR computing element having simple circuit configuration can be obtained. An electronic control switch provided with a control terminal or a 2:1 multiplexer is preferably used for the switch 3.

公开(公告)号：JPH07152714A

公开(公告)日：1995-06-16

申请号：JP18371794

申请日：1994-08-04

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： SAI CHINEI ,  KICHI TOSHIKAGE

IPC: G06G7/60 ,  G06F15/18 ,  G06N3/04

Abstract: PURPOSE: To provide a regression model capable of preventing rapid performance decline as the order of supplied data becomes higher, obtaining a fast learning speed and obtaining desired performance without falling into a local minimum point. CONSTITUTION: The regression model is constituted of a self dividing network 10 and a feed forward mapping network 20, the self dividing network 10 divides an input space into non-overlapping local areas, and in the meantime, in response to the output of the self dividing network 10, the feed forward mapping network 20 obtains partial linear maps for the respective divided input spaces. Thus, compared to a local averaging method, excellent performance is obtained in a less medium variable scale and a local minimum point problem is solved since the network is automatically constituted so as to obtain the desired performance.

公开(公告)号：JPH07152052A

公开(公告)日：1995-06-16

申请号：JP21632294

申请日：1994-09-09

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： KIN KOUBAN ,  GO MITSUTATSU ,  BOKU KISEI ,  BOKU SHIYOUDAI

IPC: G02F1/015 ,  G02F1/313

Abstract: PURPOSE: To extremely decrease switching operating currents and to minimize the operating power of an optical switch by maximizing the contact area between front surface electrodes and high-concn. current injecting regions and effectively restraining an injection current. CONSTITUTION: An n-InGaAs cap layer 15 formed on the upper part of a clad layer 13 has groove-shaped etching sections or apertures 25 in such a manner that the current injection area of a reflection surface 102 formed by Zn-diffused regions 18 in the intersected parts of waveguides. The width design of the Zn diffused regions 18 which are the current injection regions is made free by the cap layer 15 having such groove-shaped apertures 25. The contact area of the high-concn. P -InGaAs regions 18 diffused with Zn and the front surface electrodes 16 is made larger on the same plane than the contact area in the case of an ordinary plane, by which ohmic characteristics are improved.

公开(公告)号：JPH07115114A

公开(公告)日：1995-05-02

申请号：JP33175292

申请日：1992-12-11

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： KIYOU SEISHIYUN ,  KIN HOYUU ,  BAI KAZUNARI

IPC: H01L21/66

Abstract: PURPOSE: To read out the value of an energy gap more simply in a short time, by passing the light source having a constant wavelength through a test piece, and utilizing the obtained characteristics of the transmitted spectrum with an image processing system. CONSTITUTION: The light having a constant wavelength band (λ) with an energy gap(Eg) as the center is irradiated on a test piece. After the transmission function of λ=f(x) is obtained with an optical filter 5, the image is formed. The live image plane from an image input device 6 is stored in the frame memory of an image-signal processor 7. Then, scanning is performed along the side (x) for the image on a monitor. The scanned pixel value (x) and the Eg pixel value Xgap are compared. At the place where both values agree, the (x) coordinates of the pixel are read, and the λ gap is obtained from the algorithm of λ=f(x). Then, the relationship of gap (eV)=1.239/λ gap (μm) is used, and the value is converted into [eV] unit of the gap, and Eg is obtained.

公开(公告)号：JPH0758879A

公开(公告)日：1995-03-03

申请号：JP27467893

申请日：1993-11-02

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： GO JIYUNSHIYAKU

IPC: H04M11/00 ,  G06F13/00 ,  H04L29/02 ,  H04L29/06 ,  H04L29/08 ,  H04M11/06

Abstract: PURPOSE: To enable simultaneous communication with a main controller and many terminals by matching the main controller to a public telephone communication network by providing a control means which repeats digital command and data by the package unit in response to periodical calls of the main controller between the main controller and a repetition control means. CONSTITUTION: A high-level data interface control(HDLC) circuit 16 transmits instructions and data flowing in from a computer system 14 by the package unit to a repetition control section 22 and, in addition, many command and data flowing in from a control section 22 to a system 14 side after packaging. When a transmission request command is inputted to the control section 22 from the system 14 through the circuit 16, the section 22 supplies the telephone number of a terminal to a DTMF device 28 by controlling a MODEM device 30 to form the loop of a public telephone communication network 21.