Abstract:
PURPOSE: A via connection structure, a semiconductor device including the same, and manufacturing methods thereof are provided to prevent a contact failure by including a wiring barrier layer. CONSTITUTION: A substrate has a first side and a second side. The second side faces the first side. A through via structure (45a) includes a first end and a second end. An insulation layer (30) has a rewiring groove. A rewiring structure (50) includes a rewiring barrier layer and a rewiring part.
Abstract:
PURPOSE: A cleaning system and a maintenance station thereof are provided to improve durability of product and to improve cleaning performance by preventing temperature rise due to a fan motor. CONSTITUTION: A cleaning system comprises an opening part, a robot cleaner, and a maintenance station. The robot cleaner includes a first dust bin which is connected to the opening part. In the maintenance station, the robot cleaner is docked in order to discharge the dust which is stored in the first dust bin. The maintenance station comprises a first inlet, a fist outlet, a circulation flow passage, a second dust bin(44), a blower(41), a second outlet. The first inlet is formed in order to inhale the dust from the first dust bin through the opening part of the robot cleaner. The blower includes a ventilation fan and a fan motor which drives the ventilation fan. Air flows through the circulation flow passage.
Abstract:
PURPOSE: A robot cleaner and a control method thereof are provided to prevent a main body from colliding with obstacles. CONSTITUTION: A robot cleaner comprises a main body, a brush unit, and a brush cleaning member. The brush unit is rotatably installed in the main body and sweeps dusts on the floor into the brush unit. The brush cleaning member protrudes to the bush unit for touching the brush unit. The brush cleaning member comprises a fist brush cleaning protrusion(42a) and a second brush cleaning protrusion(42b) which removes foreign substance from the brush unit. The first brush cleaning protrusion and the second brush cleaning protrusion incline to the different direction. When the brush unit rotates to the first direction, the first brush cleaning protrusion removes the foreign substances which are wound in the brush unit. When the brush unit rotates the second direction, the second brush cleaning protrusion removes the foreign substances which are wound the brush unit.
Abstract:
PURPOSE: An automatic cleaning device, a maintenance station and a cleaning system with the same are provided to reduce energy consumption and a material cost by circulating air between an automatic cleaning device and a maintenance station. CONSTITUTION: An automatic cleaning device comprises a body(21), a dust tank(43), and a brush unit(41). The body comprises an opening(21a). The dust tank is prepared on the body to store dust. The brush unit is prepared on the opening of the body. The brush unit sweeps and sends dust on the floor to the dust tank. The dust stored in the dust tank floats by air flowing into through the opening of the body. The floating dust is externally emitted through the opening of the body. When the dust is emitted, the roller of the brush unit changes a rotating direction at least one time.
Abstract:
PURPOSE: A semiconductor device with a rewiring structure, a semiconductor package including the same, a package laminate structure, a semiconductor module, an electronic circuit board, an electronic system, and manufacturing methods thereof are provided to improve yield through simple manufacturing processes. CONSTITUTION: Chip pads are formed on the upper side of a semiconductor chip. A protection layer(730) is formed on the semiconductor chip. A rewiring insulation layer is formed on the protection layer. Rewiring via plugs(760v) are connected to a chip pad by vertically passing through the protection layer and the rewiring insulation layer. A rewiring structure(760) includes rewiring electrically connected to the rewiring via plugs. The upper surface height of the rewiring via plugs is equal to the upper surface height of the rewiring. At least one rewiring via plug is integrated to the rewiring using the same materials.
Abstract:
PURPOSE: A method for forming a connection terminal including a solder unit and a solder unit supporter is provided to efficiently reduce an external impact by changing the propagation direction of a crack. CONSTITUTION: A substrate with a UBM(Under Bump Metallurgy)(116) is prepared. A solder unit(141) comprised of a lower side of a cylindrical shape and an upper side of a sphere shape is formed. The lower side is combined with the UBM. A solder unit supporter(130) is formed on the substrate and surrounds the lower side. The solder unit supporter is arranged on the UBM.
Abstract:
PURPOSE: A semiconductor chip, a stack module, and a manufacturing method of the semiconductor chip and memory card each other securely connect the semiconductor chip through the latch bond of the conductive bump and spike portion. The connection reliability between the semiconductor chips is enhanced. CONSTITUTION: One or more conductive pad(130) is formed on the semiconductor substrate(110). One or more via electrode(150) is electrically connected to one or more conductive pad. A via electrode is extended toward the above semiconductor inside substrate. Electrode it empties comprises the spike portion, and the body part and protrusion.
Abstract:
A semiconductor device including a through electrode and a method for manufacturing the same are provided to minimize the process failure by simplifying the fabrication of through electrode which is arranged around the metal layer. A semiconductor device including a through electrode comprises a semiconductor substrate(101), a first insulating layer(110), a wiring(115), a second insulating layer(120), a conductive pad(125), the penetration hole and a through electrode(150). The first insulating layer is formed on the semiconductor substrate. The wire is located on the surface of the first insulating layer and has an opening to expose the first insulating layer. The second insulating layer is formed on the first insulating layer and the wiring while filling up the first opening. The conductive pad is formed on the second insulating layer and includes the second opening for exposing the second insulating layer. The penetration hole is formed through the semiconductor substrate, the first insulating layer, and the second insulating layer.
Abstract:
A semiconductor device including a re-wiring structure and a forming method thereof are provided to minimize warpage of a wafer due to a thermal expansion coefficient difference between a wafer and multi-insulating layer patterns. A semiconductor chip(210) includes an active surface on which pads are arranged. A protective layer pattern(214) is formed to cover the active surface of the semiconductor chip and to expose the pads. A first insulating layer pattern(216) is arranged on the protective layer pattern. A second insulating layer pattern(218) is arranged on the first insulating layer pattern. A plurality of re-wiring patterns(220) are electrically connected to the pads and are extended to the second insulating layer pattern. The second insulating layer pattern is locally arranged on the first insulating layer pattern around a lower part of the re-wiring patterns.
Abstract:
웨이퍼 레벨 패키지 및 그 제조 방법을 제공한다. 이 방법은 웨이퍼 상에 연결 패드를 갖는 반도체 칩들을 형성하고, 웨이퍼의 하부면을 패터닝하여 연결 패드 아래에 트렌치를 형성하고, 트렌치의 바닥면을 패터닝하여 연결 패드의 하부면을 노출시키는 비아홀을 형성한 후, 비아홀을 통해 연결 패드에 접속하는 연결 소자를 형성하는 단계를 포함한다.