公开(公告)号：EP1770055B1

公开(公告)日：2008-05-28

申请号：EP05425676.3

申请日：2005-09-28

Applicant: STMicroelectronics S.r.l.

Inventor： Corona, Pietro ,  Villa, Flavio Francesco ,  Barlocchi, Gabriele

IPC: B81B3/00

CPC classification number: B81C1/00158 ,  B81B2201/025 ,  B81B2203/0109 ,  B81B2203/0315

公开(公告)号：EP1657553A3

公开(公告)日：2007-12-19

申请号：EP06001027.9

申请日：2000-04-14

Applicant: MURATA MANUFACTURING CO., LTD.

Inventor： Oguchi, Takahiro, (A170) Intell., Prop., Dept.

IPC: G01P15/08

CPC classification number: G01C19/5719 ,  B81B2201/025 ,  B81C1/00579 ,  B81C1/00587 ,  B81C2201/0132 ,  B81C2201/014 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814 ,  Y10S148/012 ,  Y10S148/135 ,  Y10S148/159

Abstract: A method of manufacturing an external force detection sensor in which a sensor element is formed by through-hole (20) dry etching of an element substrate (3), and an electrically conductive material is used as an etching stop layer (18) during the dry etching.

Abstract translation: 一种制造外力检测传感器的方法，其中通过元件衬底（3）的通孔（20）干蚀刻形成传感器元件，并且导电材料用作蚀刻停止层（18） 干法蚀刻。

公开(公告)号：EP1778582A1

公开(公告)日：2007-05-02

申请号：EP05740037.6

申请日：2005-04-28

Applicant: Robert Bosch GmbH

Inventor： FISCHER, Frank ,  GRAF, Eckhard ,  STAHL, Heiko ,  KUEPPERS, Hartmut ,  SCHEUERER, Roland

IPC: B81B7/00 ,  B81C1/00

CPC classification number: B81B7/0041 ,  B81B7/02 ,  B81B2201/025 ,  B81C2201/019 ,  B81C2203/0145

Abstract: The invention relates to a micromechanical component having at least two caverns, in which the caverns are delimited by a micromechanical part and by a cap, and the caverns have different atmospheric internal pressures. The invention also relates to a method for producing a micromechanical component having at least two caverns, in which the caverns are delimited by a micromechanical part and by cap. To this end, the micromechanical part and the cap are hermetically joined to one another at a first predeterminable atmospheric pressure. Afterwards, an entrance to at least one cavern is made, and the entrance is then hermetically closed at a second predeterminable atmospheric pressure.

公开(公告)号：EP1721173A1

公开(公告)日：2006-11-15

申请号：EP04804166.9

申请日：2004-12-22

Applicant: ETH Zürich

Inventor： HIEROLD, Christofer ,  JUNGEN, Alain ,  STAMPFER, Christoph

IPC: G01P15/08 ,  G01P15/12 ,  G01L1/22

CPC classification number: B81B3/0021 ,  B81B2201/025 ,  B82Y15/00 ,  B82Y30/00 ,  G01L1/005 ,  G01P15/123 ,  Y10S977/724 ,  Y10S977/953 ,  Y10S977/956

Abstract: The resolution and the signal-to-noise ration of known force sensors as e.g. capacitive force sensors decrease when scaling them down. To solve this problem there is a solution presented by the usage of a nanostructure as e.g. a carbo nanotube, which is mechanically deformed by a force to be measured. The proposed force sensors comprises a support with two arms carrying the carbon nanotube. The main advantage of this force sensor is a very high sensitivity as the conductance of carbon nanotubes changes several orders of magnitude when a mechanical deformation arises.

公开(公告)号：EP1657553A2

公开(公告)日：2006-05-17

申请号：EP06001027.9

申请日：2000-04-14

Applicant: MURATA MANUFACTURING CO., LTD.

Inventor： Oguchi, Takahiro, (A170) Intell., Prop., Dept.

IPC: G01P15/08

CPC classification number: G01C19/5719 ,  B81B2201/025 ,  B81C1/00579 ,  B81C1/00587 ,  B81C2201/0132 ,  B81C2201/014 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814 ,  Y10S148/012 ,  Y10S148/135 ,  Y10S148/159

Abstract: A method of manufacturing an external force detection sensor in which a sensor element is formed by through-hole (20) dry etching of an element substrate (3), and an electrically conductive material is used as an etching stop layer (18) during the dry etching.

公开(公告)号：EP1360143A2

公开(公告)日：2003-11-12

申请号：EP02708202.3

申请日：2002-02-04

Applicant: ROBERT BOSCH GMBH

Inventor： FISCHER, Frank ,  FREY, Wilhelm ,  METZGER, Lars

IPC: B81B3/00

CPC classification number: G01P15/125 ,  B81B2201/025 ,  B81C1/00619 ,  B81C2201/0112 ,  G01P15/0802 ,  G01P2015/0814

Abstract: The invention relates to a method for producing surface micromechanical structures having a high aspect ratio. At least one sacrificial layer (20) is provided between a substrate (30) and a functional layer (10). Trenches (60, 61) are provided in said functional layer (10) by means of a plasma etching process, said trenches uncovering at least some surface areas (21, 22) of the sacrificial layer (20). According to the invention, a further layer (70) is deposited at least partially on the lateral walls of the trenches, but not on the uncovered surface areas (21, 22) of the sacrificial layer (20), in order to increase the aspect ratio of said trenches. The invention also relates to a sensor, especially an acceleration or rotational rate sensor.

公开(公告)号：EP1046917A2

公开(公告)日：2000-10-25

申请号：EP00108261.9

申请日：2000-04-14

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Oguchi, Takahiro, c/o(A170) Intell. Prop. Dept.

IPC: G01P15/08

CPC classification number: G01C19/5719 ,  B81B2201/025 ,  B81C1/00579 ,  B81C1/00587 ,  B81C2201/0132 ,  B81C2201/014 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814 ,  Y10S148/012 ,  Y10S148/135 ,  Y10S148/159

Abstract: A method of manufacturing an external force detection sensor in which a sensor element is formed by through-hole (20) dry etching of an element substrate (3), and an electrically conductive material is used as an etching stop layer (18) during the dry etching.

Abstract translation: 一种制造外力检测传感器的方法，其中通过元件基板（3）的通孔（20）干蚀刻形成传感器元件，并且导电材料被用作蚀刻停止层（18）期间 干蚀刻。

公开(公告)号：KR20180018607A

公开(公告)日：2018-02-21

申请号：KR20180010886

申请日：2018-01-29

Applicant: 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드

Inventor： CHEN TUNG TSUN ,  CHU CHIA HUA

IPC: B81B3/00 ,  G01L9/00

CPC classification number: B81B1/004 ,  B81B2201/025 ,  B81B2201/0264 ,  B81C1/00087 ,  B81C1/00309 ,  B81C2201/019 ,  G01L9/00

Abstract: MEMS(micro-electro mechanical system) 압력센서는, 제1 기판, 제2 기판및 감지구조체를포함한다. 제2 기판은제1 기판과실질적으로평행하다. 감지구조체는제1 기판과제2 기판사이에있고, 상기제 기판의일부와상기제2 기판의일부에접합되며, 여기서제1 기판과감지구조체사이의제1 공간은외부와소통되며, 제2 기판과감지구조체사이의제2 공간은외부와소통되거나또는외부로부터격리된다.

Abstract translation: 微机电系统（MEMS）压力传感器包括第一基板，第二基板和感测结构。 第二衬底基本平行于第一衬底。 感测结构位于第一基板与第二基板之间，并且结合至第一基板的一部分和第二基板的一部分，其中第一基板与感测结构之间的第一空间与外部连通，以及 第二基板与感测结构之间的第二空间与外界连通或隔离。

公开(公告)号：KR101771064B1

公开(公告)日：2017-08-24

申请号：KR1020147036187

申请日：2013-06-28

Applicant: 인텔 아이피 코포레이션

Inventor： 오프너제랄드 ,  메이어토르스텐

IPC: B81C1/00 ,  B81B7/02 ,  H01L25/18

CPC classification number: B81C1/00238 ,  B81B7/008 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/025 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2201/0271 ,  B81B2201/10 ,  B81B2207/012 ,  B81B2207/053 ,  B81B2207/07 ,  B81B2207/096 ,  B81C1/0023 ,  B81C2203/0792 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2924/15311 ,  H01L2924/00014

Abstract: 실시예들에서, 패키지어셈블리는활성면및 비활성면을구비하는마이크로전자기계시스템(MEMS) 및주문형집적회로(ASIC)를포함할수 있다. 실시예들에서, MEMS는하나이상의인터커넥트를거쳐 ASIC에직접연결될수 있다. MEMS, ASIC, 및하나이상의인터커넥트는캐비티를정의하거나형성함으로써 MEMS의활성면일부가캐비티내에존재한다. 일부실시예들에서, 패키지어셈블리는복수의하나이상의인터커넥트를거쳐 ASIC에직접연결된복수의 MEMS를포함할수 있다. 다른실시예들이설명되고/되거나특허청구될수 있다.

Abstract translation: 在实施例中，封装组件可以包括具有有源表面和无源表面的微机电系统（MEMS）和专用集成电路（ASIC）。 在实施例中，MEMS可以经由一个或多个互连直接连接到ASIC。 MEMS，ASIC和一个或多个互连通过在空腔内限定或形成空腔来限定MEMS的一些有源表面。 在一些实施例中，封装组件可以包括经由多个一个或多个互连直接耦合到ASIC的多个MEMS。 其他实施例可以被描述和/或要求保护。

公开(公告)号：KR1020140088070A

公开(公告)日：2014-07-09

申请号：KR1020147002380

申请日：2012-06-29

Applicant: 무라타 일렉트로닉스 오와이

Inventor： 쿠이스마헤이키 ,  누루미사미

IPC: H01L25/04 ,  H01L25/16 ,  B81C1/00

CPC classification number: B81B7/0074 ,  B81B2201/0235 ,  B81B2201/025 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2201/036 ,  B81B2207/012 ,  B81B2207/095 ,  B81C1/00333 ,  G01C19/5783 ,  G01L19/0084 ,  G01L19/148 ,  G01P1/023 ,  G01P1/026 ,  G01P15/0802 ,  H01L21/568 ,  H01L23/528 ,  H01L23/5389 ,  H01L24/16 ,  H01L24/17 ,  H01L24/19 ,  H01L24/32 ,  H01L24/73 ,  H01L24/83 ,  H01L24/92 ,  H01L24/96 ,  H01L24/97 ,  H01L25/16 ,  H01L25/18 ,  H01L25/50 ,  H01L27/14618 ,  H01L2223/6677 ,  H01L2224/12105 ,  H01L2224/16145 ,  H01L2224/16227 ,  H01L2224/1703 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/8312 ,  H01L2224/8319 ,  H01L2224/92125 ,  H01L2224/97 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/1461 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/00012 ,  H01L2924/00

Abstract: 시스템-인-패키지 디바이스의 제조 방법 및 시스템-인-패키지 디바이스가 개시되어 있다. 방법에서, 사전결정된 치수들을 가진 적어도 하나의 제 1 스피시즈 다이, 사전결정된 치수들을 가진 적어도 하나의 제 2 스피시즈 다이 및 시스템-인-디바이스의 적어도 하나의 추가의 구성 요소가 시스템-인-패키지 디바이스에 포함된다. 제 1 및 제 2 스피시즈 다이들 중 적어도 하나가 리디멘져닝을 위해 선택되고 재료가 선택된 다이의 적어도 하나의 측면에 추가되어 추가된 재료 및 선택된 다이가 리디멘져닝된 다이 구조를 형성한다. 접속 층은 리디멘져닝된 다이 구조 상에 형성된다. 리디멘져닝된 다이 구조는 선택되지 않은 다이 및 접속 층을 통해 리디멘져닝된 다이 구조와 접촉하는 적어도 하나의 추가의 구성 요소를 장착하도록 디멘져닝된다.

Abstract translation: 公开了一种制造系统级封装器件的方法，以及一种系统级封装器件。 在该方法中，至少一个具有预定尺寸的第一种模具，具有预定尺寸的至少一个第二种类模具，并且系统级装置中的至少一个另外的部件被包括在系统级封装装置中。 选择第一和第二种类模具中的至少一种用于重新定向，并且将材料添加到所选择的模具的至少一侧，使得添加的材料和所选择的模具形成重新定型的模具结构。 在重新定型的模具结构上形成连接层。 尺寸设计为重新定型的模具结构，以允许非选择的模具和至少一个另外的部件通过连接层与重新定向的模具结构接触。