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公开(公告)号：JPH0340072A
公开(公告)日：1991-02-20
申请号：JP32977389
申请日：1989-12-21
Applicant: KOREA ELECTRONICS TELECOMM , KOREA TELECOMMUNICATION
Inventor： JIN HOO HAN , SAN JIYUN KIMU
Abstract: PURPOSE: To shorten the BITBLT(bit boundary block transfer) processing time and to improve the performance of a window function, a graphic function, or the like by providing an address control means in the front end of a memory device and adding values of the address input and the address control input to obtain an address signal of the memory device. CONSTITUTION: A memory device 9 is provided with an address control means 10 provided with an address control input AC port, an address input port, and an address computing element 8 in the front end. Values of the address input and the address control input AC applied to the address control means 10 are added, and this addition result is inputted as the address signal of the memory device 9. Thus, the BITBLT processing time is shortened, and the entire image processing effect is improved, and the window function, the graphic function, or the like of a work station is improved furthermore.
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公开(公告)号：JPH02276143A
公开(公告)日：1990-11-13
申请号：JP33880589
申请日：1989-12-28
Applicant: KOREA ELECTRONICS TELECOMM
Inventor： CHIE YOON KIYU , YANGU JIYON UTSUGU , II JIN HII , II JIEE SHIN , SHIMU KIYU FUAN , KANGU JIN YONGU
Abstract: PURPOSE: To increase the stability of a light spot and remove contaminant periodically so that a continuous operation is made practicable, by adjusting the gas conductivity with the size of a hole provided in a metal disc located between a gas supply chamber and a discharge chamber. CONSTITUTION: The gas conductivity is adjusted with the size of a hole 23 provided in a metal disc 22 located between a gas supply chamber 30 and a discharge chamber 19, and thereby a differential vacuum is generated between the two chambers 30 and 19 so as to form a uniform flow, wherein the size of the hole 23 is made greater as going toward the center. Accordingly the gas flow can fill evenly the part behind the current curved surfaces 15, 16, 17, 18, which allows decreasing a change in the gas flow. The vessel from the terminating point of the center electrode 1 to the exhaust port 55a of an observing cylinder 56 is made in a shape circular, semi-circular, or elliptical, which prevents distortion of the gas flow and also potential distribution, and it is possible to establish good reproducibility of the position of the generation point 20.
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公开(公告)号：JPH02202734A
公开(公告)日：1990-08-10
申请号：JP32277389
申请日：1989-12-14
Applicant: KOREA ELECTRONICS TELECOMM , KOREA TELECOMMUNICATION
Inventor： BOMU CHIYORU RII , KUUON CHIYORU PAKU , BON TE KIMU
Abstract: PURPOSE: To attain extensive use with excellent synchronizing performance even for a non-standardized tramsmitting speed, and to improve data transmitting quality by providing a frame synchronizing pattern detecting means and a counter phase synchronizing means or the like. CONSTITUTION: A frame synchroniying pattern detecting circuit 1 outputs an output signal X to a counter phase synchronizing circuit 4 at the time of detecting the coincidence of a synchronizing pattern in a received data stream with a normalized synchronizing pattern. Also, a synchronizing/synchronization losing state deciding circuit 3 inputs an output signal FER indicating the detection in a synchronization losing state of the circuit 1, and an output signal BER of a frame pattern bit error detecting circuit 2, and outputs an output signal W to the circuit 4. The circuit 4 inputs the signal X, the signal W, and reference phase information Y of a counter and timing generating circuit 5, and outputs a control signal Z for operating the circuit 5 in a parallel load mode or count-up mode. Thus, extensive use can be attained with excellent synchronizing performance even for a non-standardized transmitting speed, and to improve transmitting quality.
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公开(公告)号：JPH0269755A
公开(公告)日：1990-03-08
申请号：JP7367289
申请日：1989-03-24
Applicant: KOREA ELECTRONICS TELECOMM
Inventor： CHIYOE SANSUU
IPC: G03F7/26 , G03F7/09 , G03F7/40 , H01L21/027 , H01L21/205 , H01L21/3105 , H01L21/311
Abstract: PURPOSE: To prevent the occurrence of an intermixing effect by forming a spacer, then executing formation of a fine line width by a dry process develop ment method using the spacer as mask. CONSTITUTION: An oxidized film is formed on an upper photosensitive film 104. Next, the oxidized film is flattened by a dry process etching method to form the spacers 106 and a lower photosensitive film 102 is subjected to dry process development to form negative patterns. The position patterns are formed by executing the dry process etching to the extent of the film thickness of the upper photosensitive film 104.l The spacers 106 are removed and an SOG film 107 is formed. The SOG(Spin On Glass) film 107 is etched by the dry process etching down to the lower photosensitive film 102 having no patterns. Further, a positive pattern forming stage for developing the lower photosensitive film 102 by a dry process is provided. The dry process development of the lower photosensitive film 102 is executed with the oxidized film layer as a mask. As a result, the occurrence of the intermixing effect is averted.
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公开(公告)号：JPH0193159A
公开(公告)日：1989-04-12
申请号：JP17827188
申请日：1988-07-19
Applicant: KOREA ELECTRONICS TELECOMM
Inventor： KIN KOUSHIYU , SAI SOUKUN , GU YOUSHIYO , KIN JIYOKAN , RI SHINKOU
IPC: H01L29/73 , H01L21/331 , H01L21/8249 , H01L27/06 , H01L29/732
Abstract: PURPOSE: To ensure high speed and high integration characteristics by simultaneously fabricating a high speed bipolar transistor with self alignment of polycrystalline Si and a high integration CMOS device using one wafer. CONSTITUTION: The surface of a P type substrate (Si wafer) 1 is ion implanted with As using a buried layer mask to form N type buried layers 2, 3 and an N type epitaxial layer 4 is grown over the entire surface of the substrate. The layer 4 is ion implanted with B using an oxide film mask to form a P type well 5, and after the oxide film is formed, a Si3 N4 film is deposited. The inside of the layer 4 is ion implanted with B to form a P type junction isolation layer 6, and an oxide film is grown, and further a device isolation region 7 and an insulating layer 8 are formed. B, P are implanted using a mask to form a P type base region 9 and an N type collector region 10, and As is implanted to form an N type polycrystal Si layer 11 on which an oxide film 12 is deposited. Then, gates 13, 14, an emitter 15, and a collector 16 are simultaneously formed. Further, sources/drains 17, 18 and 19, 20 are formed.
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Patent Agency Ranking166.发明专利
公开(公告)号：JP2005031623A
公开(公告)日：2005-02-03
申请号：JP2003435911
申请日：2003-12-26
Applicant: KOREA ELECTRONICS TELECOMM
Inventor： KIM KANG HO , OH KWANG RYONG , KWON OH KEE , KIM JONG HOI , KIM HYEONG-SOO
Abstract: PROBLEM TO BE SOLVED: To provide an optical element with an integrated light deflector with which a light direction is deflected without requiring a complicated external driving circuit. SOLUTION: A manual waveguide having the light deflector integrated therewith is equipped with cladding regions 301, 304, an optical waveguide core 302 and the light deflector 303. A propagation direction of light waveguided to the optical waveguide core 302 is varied in passing of the light through the light deflector 303. The light deflector 303 is formed by patterning a part of the upper cladding layer on the upper side of a specified region of the optical waveguide core 302 in a predetermined shape and deflects the propagation direction of the advancing light by modifying the refractive index of the core 302 on the lower side of the predetermined shape in accordance with a current or an electric field applied to the light deflector 303. COPYRIGHT: (C)2005,JPO&NCIPI
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公开(公告)号：JP2003238956A
公开(公告)日：2003-08-27
申请号：JP2002378261
申请日：2002-12-26
Applicant: KOREA ELECTRONICS TELECOMM
Inventor： KANG SEUNG-YOUL , SUH KYUNG-SOO
Abstract: PROBLEM TO BE SOLVED: To provide a blue phosphor having a high luminous efficiency for a fluorescent display and its manufacturing method. SOLUTION: The blue phosphor for a fluorescent display is obtained from a matrix comprising SrCO 3 and an activator comprising a Ce compound. In the method for manufacturing the blue phosphor for a fluorescent display, SrCO 3 and CeO 2 are homogeneously mixed according to the composition represented by general formula: SrCO 3 +xCeO 2 (wherein 0.01≤x COPYRIGHT: (C)2003,JPO
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公开(公告)号：JP2003215224A
公开(公告)日：2003-07-30
申请号：JP2002105403
申请日：2002-04-08
Applicant: KOREA ELECTRONICS TELECOMM
Inventor： PYO GIRUSHIKU , YUN YONGUN , I JONMUN , CHE WONGYU , KIM BONSUU , CHE JEIKU
Abstract: PROBLEM TO BE SOLVED: To simplify a power transmission and a directivity error detection structure for tracking by using a power transmission and a DC motor which generate small noises and making a tracking speed quicker. SOLUTION: Active modules 120, 130 supply two signals received from array antennas 100, 110 to a power combining portion 140 to combine them. A frequency converter portion 150 supplies a bias from a signal distribution/detection portion 160, and converts a satellite signal into a signal of a frequency band lower than that. The distribution/detection portion 160 distributes the satellite signal received from the converter portion 150, supplies it to a rotary joint 190, receives a tracking signal selection signal from a satellite tracking portion 170 for detecting a tracking signal, and detects the strength of a signal of a desired channel. The control portion 170 carries out satellite tracking algorithm, supplies a control signal for phase transition to the active module 120, and supplies a motor control signal to a power transmission portion 180. COPYRIGHT: (C)2003,JPO
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公开(公告)号：JP2003203556A
公开(公告)日：2003-07-18
申请号：JP2002156358
申请日：2002-05-29
Applicant: KOREA ELECTRONICS TELECOMM
Inventor： AHN SEONG DEOK , LEE JIN HO , CHO KYOUNG IK
Abstract: PROBLEM TO BE SOLVED: To reduce driving voltage, and to reduce electric power consumption by forming a hole of nanometer size in the first place in a manufacturing process of a semiconductor element, and increasing the aspect ratio of an emitter by forming the emitter in the hole. SOLUTION: This field emission element is composed of an emitter electrode 24 formed on a silicon substrate 21, an insulating layer 25 formed on the emitter electrode 24, a nanohole 27 formed in the nanosize in the insulating layer 25, and exposing the emitter electrode 24, a catalyst layer 28 formed on a bottom surface of the nanohole 27, the emitter 29 formed in the nanohole 27, and a gate electrode 26 formed on the insulating layer 25 around the emitter 29, and has an effect capable of reducing the driving voltage, and capable of reducing the electric power consumption by forming the hole 27 of nanometer size in a semiconductor manufacturing process, and increasing the aspect ratio of the emitter 29 by forming the emitter 29 in the nanohole 27. COPYRIGHT: (C)2003,JPO
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公开(公告)号：JP2003198056A
公开(公告)日：2003-07-11
申请号：JP2002188775
申请日：2002-06-27
Applicant: KOREA ELECTRONICS TELECOMM
Inventor： OH KWANG RYONG , LEE MYUNG LAE , KIM HYUN SOO , SONG JUNG HO , KIM KANG HO
Abstract: PROBLEM TO BE SOLVED: To provide a variable wavelength external resonator which can vary the wavelength by an electric signal, can successively very a wavelength at high speed, and uses a light deflector stably operating according to the electric signal. SOLUTION: A light beam emitted from a light source 301 is transformed to a parallel light beam by a lens 302a. The parallel light beam is diffracted on a diffraction grating 304, and is propagated through a light deflector 308 arranged between a reflecting mirror 305 and the diffraction grating 304. The light deflector 308 is configured so that an index of refraction can vary according to an input electric signal. Of light beams propagating through the light deflector 308, only a light beam with a specific wavelength is emitted perpendicularly to the reflecting mirror 305. Thus, the light beam with the specific wavelength is refocused on the light source 301. COPYRIGHT: (C)2003,JPO
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