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    전계흡수형 소자의 단면 반사율 측정 방법
    11.
    发明授权
    전계흡수형 소자의 단면 반사율 측정 방법 失效
    전계흡수형소자의단면반사율측정방법

    公开(公告)号：KR100368789B1

    公开(公告)日：2003-01-24

    申请号：KR1020000005561

    申请日：2000-02-07

    Applicant: 한국과학기술연구원

    Inventor： 강병권 ,  이석 ,  박윤호 ,  김선호 ,  우덕하 ,  최원준 ,  변영태 ,  한일기 ,  김회종

    IPC: G01B9/00

    Abstract: PURPOSE: A method for measuring a sectional reflexibility of a field absorption type device is provided to measure easily an optical variable by using an optical current. CONSTITUTION: A lens type fiber(21) transfers a laser beam emitted from a variable wavelength laser(10). The laser beam passing through the lens type filter(21) is irradiated on a section of a device(15). A chopper(11) turns on or off the variable wavelength laser(10). An optical rotator(14) is formed at a position adjacent to a polarization controller(13) in order to control a path of the laser beam. An optical detector(16) is connected with the optical rotator(14) in order to measure a change of reflective intensity of a reflected beam. A lock-in amplifier(17) is connected with the chopper(11) in order to detect a modulated variable wavelength laser beam. A power supply(18) supplies power to each component. A voltage separator(18) separates a signal influence between the device(15) and the lock-in amplifier(17).

    Abstract translation: 目的：提供一种用于测量场吸收型器件的截面反射率的方法，以通过使用光学电流容易地测量光学变量。 构成：透镜型光纤（21）传输从可变波长激光器（10）发射的激光束。 穿过透镜型滤波器（21）的激光束照射在装置（15）的一部分上。 斩光器（11）打开或关闭可变波长激光器（10）。 在与偏振控制器（13）相邻的位置处形成旋光器（14）以控制激光束的路径。 光检测器（16）与旋光器（14）连接以测量反射光束的反射强度的变化。 锁定放大器（17）与斩波器（11）连接以便检测调制的可变波长激光束。 电源（18）为每个组件供电。 电压分离器（18）分离装置（15）和锁定放大器（17）之间的信号影响。

    양자우물 구조를 갖는 반도체 광소자의 밴드갭 제어방법
    12.
    发明公开
    양자우물 구조를 갖는 반도체 광소자의 밴드갭 제어방법 失效
    用于控制具有量子阱结构的半导体光学器件的带隙的方法

    公开(公告)号：KR1020010077666A

    公开(公告)日：2001-08-20

    申请号：KR1020000005619

    申请日：2000-02-07

    Applicant: 한국과학기술연구원

    Inventor： 최원준 ,  김선호 ,  우덕하 ,  이석 ,  한일기 ,  김회종 ,  강광남 ,  이희택

    IPC: H01L31/12

    Abstract: PURPOSE: A method for controlling a band gap of a semiconductor optical device having the structure of a quantum well is provided to prevent a quantum well substrate damaging by using a silicon nitride film as a dielectric cover layer and by controlling a flow ratio of ammonia gas. CONSTITUTION: A substrate having the structure of a quantum well is grown(S100). A dielectric cover layer is deposited on the substrate by a plasma chemical vapor deposition process(S200). A thermal processing is performed on the dielectric cover layer at a predetermined time(S300). The dielectric cover layer is removed(S400). A fluorescence spectrum is measured(S500).

    Abstract translation: 目的：提供一种用于控制具有量子阱结构的半导体光学器件的带隙的方法，以通过使用氮化硅膜作为电介质覆盖层并通过控制氨气流量来防止量子阱基板损坏 。 构成：生长具有量子阱结构的衬底（S100）。 电介质覆盖层通过等离子体化学气相沉积工艺沉积在衬底上（S200）。 在规定时间对电介质覆盖层进行热处理（S300）。 去除电介质覆盖层（S400）。 测量荧光光谱（S500）。

    무반사 코팅을 위한 반도체 광소자 칩의 시료 홀더 장치
    13.
    发明公开
    무반사 코팅을 위한 반도체 광소자 칩의 시료 홀더 장치 失效
    用于防反射涂层的半导体光学器件的安装技术

    公开(公告)号：KR1020010077665A

    公开(公告)日：2001-08-20

    申请号：KR1020000005618

    申请日：2000-02-07

    Applicant: 한국과학기술연구원

    Inventor： 변영태 ,  이석 ,  우덕하 ,  이재하 ,  김선호 ,  한일기 ,  김회종 ,  최원준 ,  김재헌

    IPC: H01L21/00

    Abstract: PURPOSE: A mounting technology of a semiconductor optical device for anti-reflection coating is provided to perform the mounting technology in a stable and identical condition by preventing a sample from damaging in the anti-reflection coating. CONSTITUTION: A spacer(20), a fixing plate(30) and the second stainless(40) is deposited on the first stainless(10) in turns. A holder coupling unit(50) couples from the second stainless(40) to the first stainless(10) via each hole. A sample fixing unit(55) couples from the second stainless(40) to the fixing plate(30) via each hole. A laser bar(60) is extended at a level with the spacer(20) between the fixing plate(30) and the first stainless(10). The area size of the second stainless(40) is less than that of the first stainless(10).

    Abstract translation: 目的：提供用于防反射涂层的半导体光学装置的安装技术，以通过防止样品在抗反射涂层中的损坏来以稳定和相同的状态执行安装技术。 构成：间隔件（20），固定板（30）和第二不锈钢（40）轮流沉积在第一不锈钢（10）上。 保持器联接单元（50）经由每个孔从第二不锈钢（40）连接到第一不锈钢（10）。 样品定影单元（55）经由每个孔从第二不锈钢（40）耦合到固定板（30）。 激光棒（60）在固定板（30）和第一不锈钢（10）之间的间隔件（20）的水平面上延伸。 第二不锈钢（40）的面积小于第一不锈钢（10）的面积。

    전계흡수형 소자의 단면 반사율 측정 방법
    14.
    发明公开
    전계흡수형 소자의 단면 반사율 측정 방법 失效
    用于测量场吸收式装置的部分可复性的方法

    公开(公告)号：KR1020010077635A

    公开(公告)日：2001-08-20

    申请号：KR1020000005561

    申请日：2000-02-07

    Applicant: 한국과학기술연구원

    Inventor： 강병권 ,  이석 ,  박윤호 ,  김선호 ,  우덕하 ,  최원준 ,  변영태 ,  한일기 ,  김회종

    IPC: G01B9/00

    Abstract: PURPOSE: A method for measuring a sectional reflexibility of a field absorption type device is provided to measure easily an optical variable by using an optical current. CONSTITUTION: A lens type fiber(21) transfers a laser beam emitted from a variable wavelength laser(10). The laser beam passing through the lens type filter(21) is irradiated on a section of a device(15). A chopper(11) turns on or off the variable wavelength laser(10). An optical rotator(14) is formed at a position adjacent to a polarization controller(13) in order to control a path of the laser beam. An optical detector(16) is connected with the optical rotator(14) in order to measure a change of reflective intensity of a reflected beam. A lock-in amplifier(17) is connected with the chopper(11) in order to detect a modulated variable wavelength laser beam. A power supply(18) supplies power to each component. A voltage separator(18) separates a signal influence between the device(15) and the lock-in amplifier(17).

    Abstract translation: 目的：提供一种用于测量场吸收型装置的截面反射性的方法，以便通过使用光电流容易地测量光学变量。 构成：透镜型光纤（21）传送从可变波长激光器（10）发射的激光束。 穿过透镜型过滤器（21）的激光束照射在装置（15）的一部分上。 斩光器（11）打开或关闭可变波长激光器（10）。 在与偏振控制器（13）相邻的位置处形成光旋转器（14），以控制激光束的路径。 光学检测器（16）与光学旋转器（14）连接，以便测量反射光束的反射强度的变化。 锁定放大器（17）与斩波器（11）连接，以便检测调制的可变波长激光束。 电源（18）为每个组件供电。 电压分离器（18）分离装置（15）和锁定放大器（17）之间的信号影响。

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