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公开(公告)号：KR1020030056573A
公开(公告)日：2003-07-04
申请号：KR1020010086835
申请日：2001-12-28
Applicant: 한국전자통신연구원
IPC: G01B11/26
CPC classification number: G01B11/26
Abstract: PURPOSE: A measuring apparatus for a slant angle of a SIL(Solid Immersion Lens) is provided to prevent a focal signal from generating error by measuring a slant degree of the SIL quantitatively with a principle of a collimator. CONSTITUTION: A measuring apparatus for a slant angle of a SIL(Solid Immersion Lens,211) comprises a light generating device(201), a first condenser(203) and a position sensing device(210). The light generating device generates light when projecting to the SIL formed like a hemisphere. The first condenser collects light reflected from a specular surface(208) on a lower portion of the SIL. The position sensing device measures a slant of the SIL according to a focus collected by the first condenser. A light divider(202) is included to project light generated from the light generating device to the first condenser and to progress light horizontally inside the SIL. Therefore, the focus of the SIL is formed correctly by measuring the slant of the SIL and compensating the slant with measured value.
Abstract translation: 目的：提供用于SIL（固体浸没透镜）的倾斜角的测量装置，以通过用准直器的原理定量测量SIL的倾斜度来防止焦点信号产生误差。 构造：用于SIL（固体浸没透镜211）的倾斜角度的测量装置包括发光装置（201），第一冷凝器（203）和位置感测装置（210）。 当投射到如半球形状的SIL时，发光装置产生光。 第一冷凝器收集从SIL的下部的镜面（208）反射的光。 位置检测装置根据由第一冷凝器收集的焦点测量SIL的倾斜度。 包括分光器（202）以将从发光装置产生的光投射到第一冷凝器，并在SIL内水平地进行光。 因此，通过测量SIL的斜度并用测量值补偿斜面，SIL的重点正确形成。
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公开(公告)号：KR100353863B1
公开(公告)日：2003-01-24
申请号：KR1019980037412
申请日：1998-09-10
IPC: C04B35/46
CPC classification number: C04B35/49
Abstract: A microwave dielectric ceramic composition is fabricated by adding one selected from a material containing Ba and a material containing Sr or a mixture of a material containing Ba and a material containing Sr to a composition formed of 25 DIFFERENCE 43 wt % of TiO2, 39-57 wt % of ZrO2, and 7-28 wt % of SnO2 as an additive, wherein the additive is added by 0.2 DIFFERENCE 8.0 wt % based on the total amount of the composition, and is capable of implementing a high dielectric constant and quality factor by sintering at a temperature of 1250 DIFFERENCE 1400 DEG C.
Abstract translation: 微波介质陶瓷组合物通过将由选自包含Ba的材料和包含Sr的材料或包含Ba的材料和包含Sr的材料的混合物中的一种添加到由以下组成的组合物中：43重量％TiO 2，39-57 （重量）的ZrO2和7-28％（重量）的SnO2作为添加剂，其中该添加剂以组合物总量的0.2重量％添加8.0重量％，并且能够实现高介电常数和品质因数 在1250℃的温度下烧结差异1400℃
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公开(公告)号：KR1020150057931A
公开(公告)日：2015-05-28
申请号：KR1020140015993
申请日：2014-02-12
Applicant: 한국전자통신연구원
CPC classification number: C25D11/045 , B28B3/00 , C25D21/12
Abstract: 본발명은스탬프의패턴들이금속기판에대향하도록상기금속기판상에상기스탬프를배치하는단계; 전기·화학적인방법을이용하여상기금속기판내에상기스탬프의패턴들에대응하는화합물영역들을형성하는단계; 상기화합물영역들을제거하여상기금속기판에딤플들을형성하는단계; 및상기금속기판을양극산화하여상기딤플들에대응하는영역에기공(pore)들이형성된양극산화막을형성하는단계를포함하는템플레이트제조방법을제공한다.
Abstract translation: 本发明提供了一种制造模板的方法，包括以下步骤：在金属基板上设置印模以使得印模的图案能够面对金属基板; 使用电化学方法形成与金属基板内的印模图案对应的复合区域; 去除所述化合物区域以在所述金属基材上形成凹坑; 并对该金属基板进行阳极氧化以形成阳极氧化层，其中在与凹坑对应的区域中形成孔。
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公开(公告)号：KR1020150026805A
公开(公告)日：2015-03-11
申请号：KR1020140097114
申请日：2014-07-30
Applicant: 한국전자통신연구원
CPC classification number: H03H9/24 , B81B3/0035 , B81B2201/0285 , B81C1/00349 , B81C1/00436
Abstract: 진동 영역의 양 끝을 감싸는 형상으로 형성된 지지부를 포함하는 진동 소자 및 그 제조 방법이 개시된다.
진동 소자는 상부에 절연층이 형성된 하부 기판; 상기 절연층의 위에 결합되며, 하부 기판과 일정 거리 이상 이격되어 진동하는 진동 영역을 포함하는 상부 기판; 및 상기 진동 영역의 양끝을 감싸는 형태로 형성되어 상기 진동 영역을 지지하는 지지부를 포함할 수 있다.Abstract translation: 公开了一种振动装置及其制造方法，该振动装置包括围绕振动区域的两端的支撑部。 振动装置可以包括其上形成有绝缘层的下基板; 与绝缘层组合的上基板，包括与下基板隔开一定距离振动的振动区域; 以及支撑部，其围绕振动区域的两端并且支撑振动区域。
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Patent Agency Ranking
公开(公告)号：KR1020130033794A
公开(公告)日：2013-04-04
申请号：KR1020110097708
申请日：2011-09-27
Applicant: 한국전자통신연구원
CPC classification number: B29C47/30 , B29C37/0067 , B29C47/0009 , D01D5/0038 , D01D5/0076
Abstract: PURPOSE: A manufacturing method of a filter and a manufactured filter thereby are provided to have improved antibacterial, by including graphene particles evenly dispersed and adhered on the polymer nano fiber fabric, to be advantageous on controlling the differential pressure which is a required element of the filter manufacture, to form patterns on the surface of a filter by forming various patterns on the surface of the current collector, and not to necessitate extra processes for manufacturing in 3D form. CONSTITUTION: A manufacturing method of a filter comprises the following steps: a step(S10) of manufacturing solution containing graphene oxide or graphene; a step(S20) of manufacturing graphene-polymer mixed solution by mixing the solution containing graphene oxide or graphene and polymer; a step(S30) of manufacturing conductive current collector in 3D form; a step(S40) of forming 3D graphene-polymer complex filter by electro-spinning the mixed solution to the surface of the current collector; and a step(S50) of separating the 3D graphene-polymer complex filter from the current collector. The manufacturing step of the solution containing graphene or graphene oxide comprises the dispersion of the graphene particles or graphene oxide particles to the solvent. The filter has a 3D structure including a side connected from the bottom and the bottom side, and includes a polymer nano fabric and the graphene particles or the graphene oxide particles adhered polymer nano fabric. [Reference numerals] (AA) Start; (BB) End; (S10) Manufacturing a solution containing graphene oxide or a solution containing graphene; (S20) Manufacturing a graphene-polymer mixed solution; (S30) Manufacturing a 3D conductive current collector; (S40) Electro-spinning a mixed solution to the current collector; (S50) Separating the 3D graphene-polymer complex filter from the current collector;
Abstract translation: 目的：提供一种过滤器和制造的过滤器的制造方法，通过包括均匀分散并粘附在聚合物纳米纤维织物上的石墨烯颗粒来改善抗菌性，有利于控制作为所需要的元素的压差 过滤器制造，通过在集电器的表面上形成各种图案而在过滤器的表面上形成图案，并且不需要额外的3D形式的制造工艺。 构成：过滤器的制造方法包括以下步骤：制造含有石墨烯氧化物或石墨烯的溶液的工序（S10） 通过混合含有石墨烯氧化物或石墨烯和聚合物的溶液来制造石墨烯 - 聚合物混合溶液的步骤（S20） 以3D形式制造导电集电体的步骤（S30）; 通过将所述混合溶液电纺丝到所述集电体的表面来形成3D石墨烯 - 聚合物复合过滤器的步骤（S40） 以及从集电体分离3D石墨烯 - 聚合物复合过滤器的步骤（S50）。 含有石墨烯或氧化石墨烯的溶液的制造步骤包括将石墨烯颗粒或氧化石墨烯颗粒分散在溶剂中。 该过滤器具有包括从底部和底部连接的侧面的3D结构，并且包括聚合物纳米织物和石墨烯颗粒或石墨烯氧化物颗粒粘合聚合物纳米织物。 （附图标记）（AA）开始; （BB）结束; （S10）制造含有石墨烯氧化物或含有石墨烯的溶液的溶液; （S20）制造石墨烯 - 聚合物混合溶液; （S30）制造3D导电集电体; （S40）将混合溶液电纺丝至集电体; （S50）从集电体分离3D石墨烯 - 聚合物复合过滤器;
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公开(公告)号：KR1020120055211A
公开(公告)日：2012-05-31
申请号：KR1020100116816
申请日：2010-11-23
Applicant: 한국전자통신연구원
CPC classification number: B82Y40/00 , B01J20/02 , B01J20/0244 , B01J20/0248 , B01J20/0259 , B01J20/0285 , B01J20/0292 , B01J20/06 , B01J20/103 , B01J20/205 , B01J20/261 , B01J20/262 , B01J20/264 , B01J20/28007 , B01J20/3085 , B01J2220/46 , B82Y30/00
Abstract: PURPOSE: A manufacturing method of a nano wire porous media is provided to form more pores more easily, thereby more easily and simply manufacturing the nano wire porous media, and improving flexibility and durability. CONSTITUTION: A manufacturing method of a nano wire porous media comprises: a step of forming nano wire solution and polymer solution respectively; a step of forming a first mixture solution by mixing the nano wire solution and the polymer solution; a step of forming a second mixture solution including many bubbles by mixing and stirring water and organic solvent; a step of forming a third mixture solution by mixing and stirring the first and the second mixture solution; and a step of forming the nano wire porous media by freezing and drying the third mixture solution; and additionally comprises a step of surface-treating the nano wire porous media by using plasma.
Abstract translation: 目的：提供纳米线多孔介质的制造方法以更容易地形成更多的孔，从而更容易且简单地制造纳米线多孔介质，并提高柔性和耐久性。 构成：纳米线多孔介质的制造方法包括：分别形成纳米线溶液和聚合物溶液的步骤; 通过混合纳米线溶液和聚合物溶液形成第一混合溶液的步骤; 通过混合和搅拌水和有机溶剂形成包含许多气泡的第二混合溶液的步骤; 通过混合和搅拌第一和第二混合溶液形成第三混合物溶液的步骤; 以及通过冷冻和干燥第三混合物溶液形成纳米线多孔介质的步骤; 并且还包括通过使用等离子体对纳米线多孔介质进行表面处理的步骤。
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公开(公告)号：KR100912111B1
公开(公告)日：2009-08-13
申请号：KR1020070100558
申请日：2007-10-05
Applicant: 한국전자통신연구원
IPC: H01L27/098 , H01L27/095 , B82Y40/00
CPC classification number: H01L29/0673
Abstract: 본 발명은 소스 및 드레인 전극이 금속실리사이드로 구성되고, 나노선을 채널로 이용하는 쇼트키 장벽 나노선 전계 효과 트랜지스터(Schottky Barrier Nano Wire Field Effect Transistor) 및 그 제조방법에 관한 것으로, 이를 위해 본 발명은 기판에서 부양되어(suspended) 나노선으로 형성된 채널; 상기 채널의 양끝단과 전기적으로 연결되어 상기 기판 상부에 금속실리사이드로 형성된 소스 및 드레인 전극; 상기 채널을 둘러싸는 형태로 마련된 게이트전극 및 상기 채널과 게이트전극 사이에 형성된 게이트절연막을 포함하는 쇼트키 장벽 나노선 전계 효과 트랜지스터를 제공한다.
나노선, 탄소나노튜브, 금속실리사이드, 트랜지스터, 쇼트키 장벽-
公开(公告)号：KR1020090056165A
公开(公告)日：2009-06-03
申请号：KR1020070123199
申请日：2007-11-30
Applicant: 한국전자통신연구원
CPC classification number: B01J20/28007 , B01D53/02 , B01D2253/112 , B01D2253/34 , B01D2256/16 , B01J20/02 , B01J20/0214 , B01J20/0233 , B01J20/0237 , B01J20/024 , B01J20/0244 , B01J20/0248 , B01J20/0251 , B01J20/0259 , B01J20/0262 , B01J20/0285 , B01J20/0288 , B01J20/06 , B01J20/08 , B01J20/261 , B01J20/262 , B01J20/28052 , B01J20/3225 , B01J20/3248 , B01J20/3257 , B01J2220/46 , B82Y30/00 , B82Y40/00 , C01B3/001 , C01B3/0015 , C01B3/0084 , Y02E60/328
Abstract: A gas adsorption medium and an adsorption pump apparatus having the same are provided to recycle adsorbents and to improve effectiveness of gas adsorption capacity. A gas adsorption medium(110) has multi-layered structure with a material(120) having a variable ion value in which extra electronics which do not participate in a bond, is included. The material having the variable ion value and a separable material are combined between each layer. Each layer is made of the same materials or different materials. A gap of each layer is 0.1 ~ 100 nm. The material having the variable ion value has asymmetrical structure in which two or more structures are connected mutually. The material having the variable ion value is nanowire crystalline.
Abstract translation: 提供了一种气体吸附介质和具有该气体吸附介质的吸附泵装置以循环吸附剂并提高气体吸附能力的有效性。 气体吸附介质（110）具有多层结构，其中包括具有可变离子值的材料（120），其中不参与粘结的额外的电子元件。 具有可变离子值的材料和可分离材料在每层之间组合。 每层由相同的材料或不同的材料制成。 每层的间隙为0.1〜100nm。 具有可变离子值的材料具有不对称结构，其中两个或更多个结构相互连接。 具有可变离子值的材料是纳米线结晶。
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公开(公告)号：KR100864871B1
公开(公告)日：2008-10-22
申请号：KR1020070051780
申请日：2007-05-29
Applicant: 한국전자통신연구원
IPC: H01L29/78 , H01L29/772
CPC classification number: H01L21/28229 , H01L21/28079 , H01L29/495 , H01L29/513 , H01L29/517 , H01L29/6659 , H01L29/7833
Abstract: A method for manufacturing a semiconductor device is provided to obtain a high dielectric gate oxide by using an interface reaction between an oxide layer and a metal layer. An oxide layer(20) is formed on a silicon substrate(10). A metal layer(30) is deposited on the oxide layer. A metal silicate layer(40) is formed between the oxide layer and the metal layer by using an interface reaction between the oxide layer and the metal layer. A metal gate is formed by etching the metal silicate layer and the metal layer. An LDD(Lightly Doped Drain) region and source/drain electrodes are formed on the silicon substrate. The interface reaction is induced by performing a thermal process after the metal layer is deposited on the oxide layer or by using kinetic energy caused by a deposition process of the metal layer on the oxide layer.
Abstract translation: 提供一种制造半导体器件的方法，以通过使用氧化物层和金属层之间的界面反应来获得高电介质栅极氧化物。 在硅衬底（10）上形成氧化物层（20）。 金属层（30）沉积在氧化物层上。 通过使用氧化物层和金属层之间的界面反应，在氧化物层和金属层之间形成金属硅酸盐层（40）。 通过蚀刻金属硅酸盐层和金属层形成金属栅极。 在硅衬底上形成LDD（轻掺杂漏极）区域和源/漏电极。 在金属层沉积在氧化物层上之后或通过使用由氧化物层上的金属层的沉积工艺引起的动能，通过进行热处理来诱导界面反应。
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