EUV RADIATION SYSTEM AND LITHOGRAPHIC APPARATUS
    11.
    发明申请
    EUV RADIATION SYSTEM AND LITHOGRAPHIC APPARATUS 审中-公开
    EUV辐射系统和光刻设备

    公开(公告)号:WO2011018295A1

    公开(公告)日:2011-02-17

    申请号:PCT/EP2010/060145

    申请日:2010-07-14

    CPC classification number: G03F7/70033 H05G2/003

    Abstract: A lithographic projection apparatus is provided with a EUV radiation system that includes a source chamber, a supply constructed and arranged to supply a target material to a predetermined plasma formation position, an optical system formed by three or more mirrors arranged to establish a beam path extending to the target material when the target material is located at the predetermined plasma formation position, and a laser system constructed and arranged to provide a laser beam along the beam path for interaction with the target material to produce an EUV radiation-emitting plasma inside the chamber.

    Abstract translation: 光刻投影装置设置有EUV辐射系统,该EUV辐射系统包括源室,构造和布置成将目标材料供应到预定等离子体形成位置的供应源,由三个或更多个反射镜形成的光学系统, 当目标材料位于预定的等离子体形成位置时,激光系统被构造和布置成沿着光束路径提供激光束以与靶材料相互作用以在腔室内产生EUV辐射发射等离子体 。

    RADIATION SOURCE, LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD
    12.
    发明申请
    RADIATION SOURCE, LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD 审中-公开
    辐射源,光刻设备和器件制造方法

    公开(公告)号:WO2010018039A1

    公开(公告)日:2010-02-18

    申请号:PCT/EP2009/058898

    申请日:2009-07-13

    Abstract: A lithographic apparatus includes a source configured to generate a radiation beam comprising desired radiation and undesired radiation using a plasma, an illumination system configured to condition the radiation beam and to receive hydrogen gas during operation of the lithographic apparatus, and a support structure constructed to hold a patterning device. The patterning device is capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam. A substrate table is constructed to hold a substrate, and a projection system is configured to project the patterned radiation beam onto a target portion of the substrate. The lithographic apparatus is configured such that the radiation beam on entering the projection system includes at least 50% of the undesired radiation that is generated by the plasma and includes wavelengths of radiation that interact with the hydrogen gas to generate hydrogen radicals.

    Abstract translation: 光刻设备包括被配置为产生包含期望辐射和使用等离子体的不期望辐射的辐射束的源,被配置为调节辐射束并在光刻设备的操作期间接收氢气的照明系统,以及构造成保持 图案形成装置。 图案形成装置能够在其横截面中赋予辐射束图案以形成图案化的辐射束。 衬底台被构造成保持衬底,并且投影系统被配置为将图案化的辐射束投影到衬底的目标部分上。 光刻设备被配置为使得进入投影系统的辐射束包括由等离子体产生的不期望辐射的至少50%,并且包括与氢气相互作用以产生氢自由基的辐射波长。

    LITHOGRAPHIC METHOD AND APPARATUS
    14.
    发明申请
    LITHOGRAPHIC METHOD AND APPARATUS 审中-公开
    光刻方法和装置

    公开(公告)号:WO2014044670A1

    公开(公告)日:2014-03-27

    申请号:PCT/EP2013/069262

    申请日:2013-09-17

    CPC classification number: G03F7/70425 G03F7/7045 G03F7/70466 G03F7/70475

    Abstract: A method of exposing a patterned area on a substrate using an EUV lithographic apparatus having a demagnification of about 5x and a numerical aperture of about 0.4 is disclosed. The method comprises exposing a first portion of the patterned area on the substrate using a first exposure, the first portion dimensions are significantly less than the dimensions of a conventional exposure, and exposing one or more additional portions of the patterned area on the substrate using one or more additional exposures, the additional portions having dimensions which are significantly less than the dimensions of a conventional exposure. The method further comprises repeating the above to expose a second patterned area on the substrate, the second patterned area being provided with the same pattern as the first patterned area, wherein a distance between centre points of the first and second patterned areas corresponds with a dimension of a conventional exposure.

    Abstract translation: 公开了一种使用具有约5倍的缩小并且具有约0.4的数值孔径的EUV光刻设备在衬底上曝光图案化区域的方法。 该方法包括使用第一曝光将基板上的图案化区域的第一部分曝光,第一部分尺寸明显小于常规曝光的尺寸,并且使用一个或多个曝光将基板上的图案化区域的一个或多个附加部分曝光 或更多额外的曝光,附加部分的尺寸明显小于常规曝光的尺寸。 该方法还包括重复上述步骤以暴露衬底上的第二图案化区域,第二图案化区域设置有与第一图案化区域相同的图案,其中第一和第二图案化区域的中心点之间的距离对应于尺寸 的常规曝光。

    RADIATION SOURCE
    17.
    发明申请
    RADIATION SOURCE 审中-公开
    辐射源

    公开(公告)号:WO2013023710A1

    公开(公告)日:2013-02-21

    申请号:PCT/EP2011/072633

    申请日:2011-12-13

    CPC classification number: H05G2/006 G03F7/70033 H05G2/003 H05G2/008

    Abstract: A radiation source includes: a nozzle configured to direct a stream of fuel droplets (30) along a trajectory towards a plasma formation location; a laser configured to output laser radiation, the laser radiation directed at the fuel droplets at the plasma formation location to generate, in use, a radiation generating plasma; and a catch configured to catch fuel droplets that pass the plasma formation location, the catch including: a container (40) configured to contain a fluid (42); a driver (44) configured to drive the fluid, to cause the fluid to move; the catch being configured such that the fuel droplets are incident on that moving fluid.

    Abstract translation: 辐射源包括:喷嘴,其构造成沿着轨迹朝向等离子体形成位置引导燃料液滴流(30); 配置成输出激光辐射的激光器,引导到等离子体形成位置处的燃料液滴处的激光辐射,以在使用中产生辐射产生等离子体; 以及构造成捕获通过等离子体形成位置的燃料液滴的挡块,所述挡块包括:构造成容纳流体(42)的容器(40); 构造成驱动流体的驱动器(44),以使流体移动; 捕捉器构造成使得燃料液滴入射到该移动流体上。

    LITHOGRAPHIC APPARATUS, EUV RADIATION GENERATION APPARATUS AND DEVICE MANUFACTURING METHOD
    18.
    发明申请
    LITHOGRAPHIC APPARATUS, EUV RADIATION GENERATION APPARATUS AND DEVICE MANUFACTURING METHOD 审中-公开
    光刻设备,EUV辐射发生装置和装置制造方法

    公开(公告)号:WO2012031841A1

    公开(公告)日:2012-03-15

    申请号:PCT/EP2011/063443

    申请日:2011-08-04

    Abstract: An EUV radiation generation apparatus includes a laser (300) configured to generate pulses (205) of laser radiation, and an optical isolation apparatus that includes a rotatably mounted reflector (305) and a radially positioned reflector (306). The rotatably mounted reflector and the laser are synchronized such that a reflective surface (307,308) of the rotatably mounted reflector is in optical communication with the radially positioned reflector when the optical isolation apparatus receives a pulse of laser radiation to allow the pulse of laser radiation to pass to a plasma formation location (313) and cause a radiation emitting plasma to be generated via vaporization of a droplet (313a) of fuel material. The rotatably mounted reflector and the laser are further synchronized such that the reflective surface of the rotatably mounted reflector is at least partially optically isolated from the radially positioned reflector when the optical isolation apparatus receives radiation (316) reflected from the plasma formation location.

    Abstract translation: EUV辐射发生装置包括被配置为产生激光辐射的脉冲(205)的激光器(300)和包括可旋转地安装的反射器(305)和径向定位的反射器(306)的光学隔离装置。 可旋转地安装的反射器和激光器被同步,使得当光隔离装置接收到激光辐射的脉冲以允许激光辐射的脉冲时,可旋转地安装的反射器的反射表面(307,308)与径向定位的反射器光学连通 传递到等离子体形成位置(313)并且通过燃料材料的液滴(313a)的蒸发而产生辐射发射等离子体。 可旋转地安装的反射器和激光器进一步同步,使得当光隔离设备接收从等离子体形成位置反射的辐射(316)时,可旋转安装的反射器的反射表面至少部分地与径向定位的反射器光学隔离。

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