Abstract:
A lithographic projection apparatus is provided with a EUV radiation system that includes a source chamber, a supply constructed and arranged to supply a target material to a predetermined plasma formation position, an optical system formed by three or more mirrors arranged to establish a beam path extending to the target material when the target material is located at the predetermined plasma formation position, and a laser system constructed and arranged to provide a laser beam along the beam path for interaction with the target material to produce an EUV radiation-emitting plasma inside the chamber.
Abstract:
A lithographic apparatus includes a source configured to generate a radiation beam comprising desired radiation and undesired radiation using a plasma, an illumination system configured to condition the radiation beam and to receive hydrogen gas during operation of the lithographic apparatus, and a support structure constructed to hold a patterning device. The patterning device is capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam. A substrate table is constructed to hold a substrate, and a projection system is configured to project the patterned radiation beam onto a target portion of the substrate. The lithographic apparatus is configured such that the radiation beam on entering the projection system includes at least 50% of the undesired radiation that is generated by the plasma and includes wavelengths of radiation that interact with the hydrogen gas to generate hydrogen radicals.
Abstract:
A method of patterning lithographic substrates, the method comprising using a free electron laser to generate EUV radiation and delivering the EUV radiation to a lithographic apparatus which projects the EUV radiation onto lithographic substrates, wherein the method further comprises reducing fluctuations in the power of EUV radiation delivered to the lithographic substrates by using a feedback-based control loop to monitor the free electron laser and adjust operation of the free electron laser accordingly.
Abstract:
A method of exposing a patterned area on a substrate using an EUV lithographic apparatus having a demagnification of about 5x and a numerical aperture of about 0.4 is disclosed. The method comprises exposing a first portion of the patterned area on the substrate using a first exposure, the first portion dimensions are significantly less than the dimensions of a conventional exposure, and exposing one or more additional portions of the patterned area on the substrate using one or more additional exposures, the additional portions having dimensions which are significantly less than the dimensions of a conventional exposure. The method further comprises repeating the above to expose a second patterned area on the substrate, the second patterned area being provided with the same pattern as the first patterned area, wherein a distance between centre points of the first and second patterned areas corresponds with a dimension of a conventional exposure.
Abstract:
The invention relates to intensity values for a plurality of beams used to irradiate a plurality of locations on a target are determined with reference to the position and/or rotation of the locations. Also provided is an associated lithographic or exposure apparatus, an associated device manufacturing method and an associated computer program.
Abstract:
A lithographic apparatus having a programmable patterning device and a projection system. The programmable patterning device is configured to provide a plurality of radiation beams. The projection system has a lens group array configured to project the plurality of radiation beams onto a substrate. The projection system further includes a focus adjuster in an optical path corresponding to a lens group of the lens group array. The focus adjuster has an optical element having substantially zero optical power.
Abstract:
A radiation source includes: a nozzle configured to direct a stream of fuel droplets (30) along a trajectory towards a plasma formation location; a laser configured to output laser radiation, the laser radiation directed at the fuel droplets at the plasma formation location to generate, in use, a radiation generating plasma; and a catch configured to catch fuel droplets that pass the plasma formation location, the catch including: a container (40) configured to contain a fluid (42); a driver (44) configured to drive the fluid, to cause the fluid to move; the catch being configured such that the fuel droplets are incident on that moving fluid.
Abstract:
An EUV radiation generation apparatus includes a laser (300) configured to generate pulses (205) of laser radiation, and an optical isolation apparatus that includes a rotatably mounted reflector (305) and a radially positioned reflector (306). The rotatably mounted reflector and the laser are synchronized such that a reflective surface (307,308) of the rotatably mounted reflector is in optical communication with the radially positioned reflector when the optical isolation apparatus receives a pulse of laser radiation to allow the pulse of laser radiation to pass to a plasma formation location (313) and cause a radiation emitting plasma to be generated via vaporization of a droplet (313a) of fuel material. The rotatably mounted reflector and the laser are further synchronized such that the reflective surface of the rotatably mounted reflector is at least partially optically isolated from the radially positioned reflector when the optical isolation apparatus receives radiation (316) reflected from the plasma formation location.
Abstract:
A lithographic apparatus includes a radiation source configured to produce a radiation beam, and a support configured to support a patterning device. The patterning device is configured to impart the radiation beam with a pattern to form a patterned radiation beam. A chamber is located between the radiation source and patterning device. The chamber contains at least one optical component configured to reflect the radiation beam, and is configured to permit radiation from the radiation source to pass therethrough. A membrane (44) is configured to permit the passage of the radiation beam, and to prevent the passage of contamination particles (54) through the membrane. A particle trapping structure (52) is configured to permit gas to flow along an indirect path from inside the chamber to outside the chamber. The indirect path is configured to substantially prevent the passage of contamination particles (58) from inside the chamber to outside the chamber.
Abstract:
A radiation source for generating extreme ultraviolet radiation for a lithographic apparatus has a debris mitigation device comprising a nozzle arranged at or near an intermediate focus (IF) of the beam of radiation. The nozzle serves to direct a flow of gas (330) towards the radiation source or collector optic in order to deflect particulate debris (43) emitted by the radiation source.