公开(公告)号：NL2005750A

公开(公告)日：2011-01-18

申请号：NL2005750

申请日：2010-11-24

Applicant: ASML NETHERLANDS BV

Inventor： YAKUNIN ANDREI ,  BANINE VADIM ,  IVANOV VLADIMIR ,  KOSHELEV KONSTANTIN ,  KRIVTSUN VLADIMIR ,  GLUSHKOV DENIS

IPC: G03F7/20 ,  H05G2/00

公开(公告)号：NL2004984A

公开(公告)日：2010-08-12

申请号：NL2004984

申请日：2010-06-28

Applicant: ASML NETHERLANDS BV

Inventor： YAKUNIN ANDREI ,  KRIVTSUN VLADIMIR ,  MEDVEDEV VIACHESLAV ,  KODENTSOV ALEXANDRE

IPC: G02B5/20 ,  G03F7/20

公开(公告)号：SG11201407782QA

公开(公告)日：2015-01-29

申请号：SG11201407782Q

申请日：2013-05-23

Applicant: ASML NETHERLANDS BV

Inventor： PELLEMANS HENRICUS ,  VAN DER ZOUW GERBRAND ,  SMEETS RALPH ,  DE WIT JOHANNES ,  ANTSIFEROV PAVEL ,  KRIVTSUN VLADIMIR

IPC: G03F7/20 ,  H05H1/24

公开(公告)号：NL2005460A

公开(公告)日：2011-05-23

申请号：NL2005460

申请日：2010-10-06

Applicant: ASML NETHERLANDS BV

Inventor： KRIVTSUN VLADIMIR ,  YAKUNIN ANDREI ,  MEDVEDEV VIACHESLAV

IPC: G03F7/20 ,  G02B5/08

Abstract: A multilayer mirror is configured to reflect extreme ultraviolet (EUV) radiation while absorbing a second radiation having a wavelength substantially-longer than that of the EUV radiation. The mirror includes a plurality of layer pairs stacked on a substrate. Each layer pair comprises a first layer that includes a first material, and a second layer that includes a second material. The first layer is modified to reduce its contribution to reflection of the second radiation, compared with a simple layer of the same metal having the same thickness. Modifications can include doping with a third material in or around the metal layer to reduce its electric conductivity by chemical bonding or electron trapping, and/or splitting the metal layer into sub-layers with insulating layers. The number of layers in the stack is larger than known multilayer mirrors and may be tuned to achieve a minimum in IR reflection.

公开(公告)号：NL2003252A

公开(公告)日：2010-03-16

申请号：NL2003252

申请日：2009-07-21

Applicant: ASML NETHERLANDS BV

Inventor： YAKUNIN ANDREY ,  BANINE VADIM ,  IVANOV VLADIMIR ,  LOOPSTRA ERIK ,  KRIVTSUN VLADIMIR

IPC: G03F7/20 ,  H05G2/00

Abstract: A radiation source is configured to generate extreme ultraviolet radiation. The radiation source includes a plasma formation site located at a position in which a fuel will be contacted by a beam of radiation to form a plasma, an outlet configured to allow gas to exit the radiation source, and a contamination trap at least partially located inside the outlet. The contamination trap is configured to trap debris particles that are generated with the formation of the plasma.