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    SOURCE-COLLECTOR DEVICE, LITHOGRAPHIC APPARATUS, AND DEVICE MANUFACTURING METHOD
    1.
    发明申请
    SOURCE-COLLECTOR DEVICE, LITHOGRAPHIC APPARATUS, AND DEVICE MANUFACTURING METHOD 审中-公开
    源收集器件，光刻设备和器件制造方法

    公开(公告)号：WO2013107686A2

    公开(公告)日：2013-07-25

    申请号：PCT/EP2013050406

    申请日：2013-01-10

    Applicant: ASML NETHERLANDS BV

    Inventor： YAKUNIN ANDREI ,  BANINE VADIM ,  MOORS ROEL ,  VAN SCHOOT JAN ,  VERHAGEN MARTINUS ,  FRIJNS OLAV ,  KRIVTSUN VLADIMIR ,  SWINKELS GERARDUS ,  RIEPEN MICHEL ,  SCHIMMEL HENDRIKUS ,  MEDVEDEV VIACHESLAV

    IPC: G03F7/20

    CPC classification number: G03F7/70033 ,  G03F7/70166 ,  G03F7/70191 ,  G03F7/70575 ,  G03F7/70916 ,  G21K1/067 ,  G21K2201/064 ,  H05G2/008

    Abstract: A source-collector device is constructed and arranged to generate a radiation beam, The device includes a target unit constructed and arranged to present a target surface of plasma- forming material; a laser unit constructed and arranged to generate a beam of radiation directed onto the target surface so as to form a plasma from said plasma-forming material; a contaminant trap constructed and arranged to reduce propagation of particulate contaminants generated by the plasma; a radiation collector comprising a plurality of grazing-incidence reflectors arranged to collect radiation emitted by the plasma and form a beam therefrom; and a filter constructed and arranged to attenuate at least one wavelength range of the beam.

    Abstract translation: 源极集电极器件被构造和布置成产生辐射束。该器件包括构造和布置成呈现等离子体形成材料的目标表面的靶单元; 激光单元，其被构造和布置成产生被引导到所述目标表面上的辐射束，以便形成来自所述等离子体形成材料的等离子体; 构造和布置以减少由等离子体产生的颗粒污染物的传播的污染物阱; 辐射收集器，包括多个放射入射反射器，其布置成收集由等离子体发射的辐射并从其形成光束; 以及被构造和布置成衰减所述光束的至少一个波长范围的滤光器。

    SPECTRAL PURITY FILTER
    3.
    发明专利
    SPECTRAL PURITY FILTER 未知

    公开(公告)号：SG182568A1

    公开(公告)日：2012-08-30

    申请号：SG2012052643

    申请日：2010-12-08

    Applicant: ASML NETHERLANDS BV

    Inventor： YAKUNIN ANDREI ,  KRIVTSUN VLADIMIR ,  MEDVEDEV VIACHESLAV ,  KODENTSOV ALEXANDRE

    Abstract: A spectral purity filter includes a body of material, through which a plurality of apertures extend. The apertures are arranged to suppress radiation having a first wavelength and to allow at least a portion of radiation having a second wavelength to be transmitted through the apertures. The second wavelength of radiation is shorter than the first wavelength of radiation. The body of material is formed from tungsten-molybdenum alloy or a molybdenum-rhenium alloy or a tungsten-rhenium alloy or a tungsten-molybdenum-rhenium alloy.

    LITHOGRAPHIC APPARATUS AND SPECTRAL PURITY FILTER
    5.
    发明专利
    LITHOGRAPHIC APPARATUS AND SPECTRAL PURITY FILTER 未知

    公开(公告)号：SG183528A1

    公开(公告)日：2012-10-30

    申请号：SG2012063822

    申请日：2011-02-03

    Applicant: ASML NETHERLANDS BV

    Inventor： MEDVEDEV VIACHESLAV ,  BANINE VADIM ,  KRIVTSUN VLADIMIR ,  SOER WOUTER ,  YAKUNIN ANDREI

    Abstract: A reflector includes a multi layer mirror structure configured to reflect radiation at a first wavelength, and one or more additional layers. The absorbance and refractive index at a second wavelength of the multi layer mirror structure and the one or more additional layers, and the thickness of the multi layer mirror structure and the one or more additional layers, are configured such that radiation of the second wavelength which is reflected from a surface of the reflector interferes in a destructive manner with radiation of the second wavelength which is reflected from within the reflector.

    MULTILAYER MIRROR, LITHOGRAPHIC APPARATUS, AND METHODS FOR MANUFACTURING A MULTILAYER MIRROR AND A PRODUCT.
    7.
    发明专利
    MULTILAYER MIRROR, LITHOGRAPHIC APPARATUS, AND METHODS FOR MANUFACTURING A MULTILAYER MIRROR AND A PRODUCT. 未知

    公开(公告)号：NL2005460A

    公开(公告)日：2011-05-23

    申请号：NL2005460

    申请日：2010-10-06

    Applicant: ASML NETHERLANDS BV

    Inventor： KRIVTSUN VLADIMIR ,  YAKUNIN ANDREI ,  MEDVEDEV VIACHESLAV

    IPC: G03F7/20 ,  G02B5/08

    Abstract: A multilayer mirror is configured to reflect extreme ultraviolet (EUV) radiation while absorbing a second radiation having a wavelength substantially-longer than that of the EUV radiation. The mirror includes a plurality of layer pairs stacked on a substrate. Each layer pair comprises a first layer that includes a first material, and a second layer that includes a second material. The first layer is modified to reduce its contribution to reflection of the second radiation, compared with a simple layer of the same metal having the same thickness. Modifications can include doping with a third material in or around the metal layer to reduce its electric conductivity by chemical bonding or electron trapping, and/or splitting the metal layer into sub-layers with insulating layers. The number of layers in the stack is larger than known multilayer mirrors and may be tuned to achieve a minimum in IR reflection.

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