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公开(公告)号：SG11201804637UA
公开(公告)日：2018-07-30
申请号：SG11201804637U
申请日：2016-12-20
Applicant: BASF SE
Inventor： DÄSCHLEIN CHRISTIAN , SIEBERT MAX , LAUTER MICHAEL , PRZYBYLSKI PETER , PROELSS JULIAN , KLIPP ANDREAS , GUEVENC HACI OSMAN , LEUNISSEN LEONARDUS , BAUMANN ROELF-PETER , WEI TE YU
IPC: C11D3/37 , C11D11/00 , H01L21/02 , H01L21/321
Abstract: Described is a post chemical-mechanical-polishing (post-CMP) cleaning composition comprising or consisting of: (A) polyethylene glycol (PEG) with a mass average molar mass (Mw) in the range of from 400 to 8,000 g/mol, (B) an anionic polymer selected from the group consisting of poly(acrylic acid) (PAA), acrylic acid-maleic acid copolymers, polyaspartic acid (PASA), polyglutamic acid (PGA), polyvinylphosphonic acid, polyvinylsulfonic acid, poly(styrenesulfonic acid), polycarboxylate ethers (PCE), PEG-phosphorous acids, and copolymers of said polymers, and (C) water, wherein the pH of the composition is in the range of from 7.0 to 10.5.
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公开(公告)号：RU2584204C2
公开(公告)日：2016-05-20
申请号：RU2013139216
申请日：2012-01-17
Applicant: BASF SE
Inventor： KLIPP ANDREAS , MAJER DITER
IPC: C09K13/08
Abstract: Описаноприменениеповерхностно-активныхвеществ A, 1 мас.% водныйрастворкоторыхимеетстатическоеповерхностноенатяжение 3. Посредствомповерхностно-активныхвеществ A предотвращаетсяразрушениеструктур, уменьшаетсяразмытиекраяизображения, удаляютсядефектыв видеследовотводыи предотвращаетсяихпоявление, атакжеуменьшаютсядефектывследствиеудалениячастиц. 2 н. и 13 з. п. ф-лы, 1 пр.
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公开(公告)号：SG10201404328QA
公开(公告)日：2014-10-30
申请号：SG10201404328Q
申请日：2010-07-26
Applicant: BASF SE
Inventor： CHEN CHIENSHIN , SHEN MEICHIN , CHAN CHIAHAO , KLIPP ANDREAS
Abstract: The present invention relates to a substantially water-free photoresist stripping composition. Particularly, the present invention relates to a substantially water-free photoresist stripping composition useful in removing the photoresist after ion-implant process, comprising: (a) an amine, (b) an organic solvent A, and (c) a co-solvent, wherein the composition is substantially water-free (
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公开(公告)号：SG175273A1
公开(公告)日：2011-11-28
申请号：SG2011076452
申请日：2010-04-20
Applicant: BASF SE
Inventor： KLIPP ANDREAS
Abstract: A liquid composition comprising (A) at least one polar organic solvent, selected from the group consisting of solvents exhibiting in the presence of from 0.06 to 4% by weight of dissolved tetramethylammonium hydroxide (B), the weight percentage being based on the complete weight of the respective test solution (AB), a constant removal rate at 50°C for a 30 nm thick polymeric barrier anti-reflective layer containing deep UV absorbing chromophoric groups, (B) at least one quaternary ammonium hydroxide, and (C) at least one aromatic amine containing at least one primary amino group, a method for its preparation and a method for manufacturing electrical devices, employing the liquid composition as a resist stripping composition and its use for removing negative- tone and positive-tone photoresists and post etch residues in the manufacture of 3D Stacked Integrated Circuits and 3D Wafer Level Packagings by way of patterning Through Silicon Vias and/or by plating and bumping.
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公开(公告)号：SG11202112814VA
公开(公告)日：2021-12-30
申请号：SG11202112814V
申请日：2020-05-20
Applicant: BASF SE
Inventor： HOOGBOOM JOANNES THEODORUS VALENTINUS , KLIPP ANDREAS , KE JHIH JHENG , WANG CHE WEI , TING CHIA CHING
Abstract: The use of a cleaning composition in combination with one or more oxidants is described for removing post-etch or post-ash residue from the surface of a semiconductor substrate and/or for oxidative etching or partially oxidative etching of a layer or mask comprising or consisting of a material selected from the group consisting of TiN, Ta, TaN, Al and HfOx and/or a layer or mask comprising or consisting of a material selected from the group consisting of tungsten carbide (WCx) and tungsten nitride (WNx), and/or for removing from the surface of a semiconductor substrate a layer comprising an aluminium compound. Further is described said cleaning composition and a use of said cleaning composition for removing post-etch or post-ash residue from the surface of a semiconductor substrate. Under a further aspect, it is described a wet-etch composition comprising said cleaning composition and one or more oxidants as well as the use of said wet-etch composition. A process for the manufacture of a semiconductor device from a semiconductor substrate and a kit comprising said cleaning composition and one or more oxidants are also described.
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Patent Agency Ranking
公开(公告)号：MY181266A
公开(公告)日：2020-12-21
申请号：MYPI2015001504
申请日：2013-12-04
Applicant: BASF SE
Inventor： KLIPP ANDREAS , OETTER GUNTER , BITTNER CHRISTIAN , HONCIUC ANDREI
Abstract: Provided is use of an aqueous composition comprising a surfactant and a hydrophobizer for avoiding anti pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below. Said composition comprising at least one non-ionic surfactant A and at least one hydrophobizer B, wherein the at least one surfactant A has an equilibrium surface tension of 10 mN/m to 35 mN/m, determined from a solution of the at least one surfactant A in water at the critical micelle concentration, and the hydrophobizer B is selected so that the contact angle of water to the substrate is increased by contacting the substrate with a solution of the hydrophobizer B in water by 5 -95? compared to the contact angle of water to the substrate before such contacting.
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公开(公告)号：SG11201810119PA
公开(公告)日：2018-12-28
申请号：SG11201810119P
申请日：2017-05-31
Applicant: BASF SE
Inventor： DAESCHLEIN CHRISTIAN , SIEBERT MAX , LAUTER MICHAEL , LEUNISSEN LEONARDUS , GARCIA ROMERO IVAN , GUEVENC HACI OSMAN , PRZYBYLSKI PETER , PROELSS JULIAN , KLIPP ANDREAS
Abstract: Described is a post chemical-mechanical-polishing (post-CMP) cleaning composition comprising or consisting of: (A) one or more water-soluble nonionic copolymers of the general formula (I) and mixtures thereof, formula (I) wherein R1 and R3 are idependently from each other hydrogen, methyl, ethyl, n-propyl, isopropyl, n-butyl, iso-Butyl, or sec-butyl, R2 is methyl and x and y are an integer,1 (B)poly(acrylic acid) (PAA) oracrylic acid-maleic acid copolymer with a mass average molar mass (Mw) of up to 10,000 g/mol, and (C)water, wherein the pH of the composition is in the range of from 7.0 to 10.5.
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公开(公告)号：RU2669598C2
公开(公告)日：2018-10-12
申请号：RU2016104422
申请日：2014-07-01
Applicant: BASF SE
Inventor： RAJKHARDT ROBERT , KALLER MARTIN , LAUTER MIKHAEL , LI YUZHUO , KLIPP ANDREAS
IPC: C09G1/02 , C09G1/00 , C09G1/04 , H01L21/02 , H01L21/321
Abstract: Изобретениеотноситсяк композициидляхимико-механическойполировки. Описанакомпозициядляхимико-механичекойполировки, содержащая(А) одноилиболеесоединенийформулы (1)гдепарыпунктирныхлинийв формуле (1) либокаждаяобозначаетдвойнуюсвязь, либообозначаетодинарнуюсвязь, где (i) когдакаждаяпарапунктирныхлинийв формуле (1) обозначаетдвойнуюсвязь, одиниз Rи Rпредставляетсобойводороди другойиз Rи Rвыбираетсяизгруппы, включающейхлор, бром, алкил, содержащийоттрехдошестиатомовуглерода, бензоили -COOR, где Rвыбираетсяизгруппы, включающейалкилы, содержащиеоттрехдошестиатомовуглерода, или Rпредставляетсобойзаместитель, содержащийструктурнуюединицу, выбраннуюизгруппы, включающей -(СН-СН-O)-Ни -(CH-CH-O)-CH, где n, вкаждомслучае, представляетсобойцелоечислов интервалеот 1 до 15, или Rи Rобанезависимовыбираютсяизгруппы, включающейброми хлор, и (ii) когдакаждаяпарапунктирныхлинийв формуле (1) обозначаетодинарнуюсвязь, Rи Rпредставляютсобойводород, илиодиниз Rи Rпредставляетсобойводород, идругойиз Rи Rвыбираетсяизгруппы, включающейхлор, бром, алкил, содержащийоттрехдошестиатомовуглерода, бензоили -COOR, где Rвыбираетсяизгруппы, включающейалкилы, содержащиеоттрехдошестиатомовуглерода, или Rпредставляетсобойзаместитель, содержащийструктурнуюединицу, выбраннуюизгруппы, включающей -(СН-СН-O)-Ни -(СН-СН-O)-СН, где n, вкаждомслучае, представляетсобойцелоечислов интервалеот 1 до 15, или Rи Rобанезависимовыбираютсяизгруппы, включающейброми хлор, причемобщееколичествоодногоилинесколькихсоединенийформулы (1) лежитв диапазонеот 0,0001 до 1 мас.% наосновеобщеймассысоответствующейкомпозициидляхимико-механическойполировки,(В) неорганическиечастицы, органическиечастицы, илиихкомпозит, илисмесь, которыенаходятсяв формекокона, гдеобщееколичествокатионов, выбранныхизгруппы, включающеймагнийи кальций, составляетменее 1 частинамиллионнаосновеобщеймассысоответствующейкомпозиции. Такжеописаныспособполученияполупроводниковогоустройства, применениесоединенияформулы (1). Техническийрезультат: предложенакомпозициядляхимико-техническойполировки, представляющаясобойстабильнуюдисперсию, вкоторойнепроисходитразделениефаз. 3 н. и 13 з.п. ф-лы, 4 ил., 1 табл.
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公开(公告)号：MY165866A
公开(公告)日：2018-05-18
申请号：MYPI2013003124
申请日：2012-02-29
Applicant: BASF SE
Inventor： KLIPP ANDREAS , OETTER GÜNTER , MONTERO PANCERA SABRINA , HONCIUC ANDREI , BITTNER CHRISTIAN
Abstract: METHOD FOR MANUFACTURING INTEGRATED CIRCUIT DEVICES, OPTICAL DEVICES, MICROMACHINES AND MECHANICAL PRECISION DEVICES, THE SAID METHOD COMPRISING THE STEPS OF (1) PROVIDING A SUBSTRATE HAVING PATTERNED MATERIAL LAYERS HAVING LINE-SPACE DIMENSIONS OF 50 NM AND LESS AND ASPECT RATIOS OF >2; (2) PROVIDING THE SURFACE OF THE PATTERNED MATERIAL LAYERS WITH A POSITIVE OR A NEGATIVE ELECTRICAL CHARGE BY CONTACTING THE SUBSTRATE AT LEAST ONCE WITH AN AQUEOUS, FLUORINE-FREE SOLUTION S CONTAINING AT LEAST ONE FLUORINE-FREE CATIONIC SURFACTANT A HAVING AT LEAST ONE CATIONIC OR POTENTIALLY CATIONIC GROUP, AT LEAST ONE FLUORINE-FREE ANIONIC SURFACTANT A HAVING AT LEAST ONE ANIONIC OR POTENTIALLY ANIONIC GROUP, OR AT LEAST ONE FLUORINE-FREE AMPHOTERIC SURFACTANT A; AND (3) REMOVING THE AQUEOUS, FLUORINE-FREE SOLUTION S FROM THE CONTACT WITH THE SUBSTRATE. (FIG.1)
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公开(公告)号：MY158776A
公开(公告)日：2016-11-15
申请号：MYPI2011005271
申请日：2010-04-20
Applicant: BASF SE
Inventor： KLIPP ANDREAS
IPC: G03F7/42 , G03F7/20 , H01L21/02 , H01L21/302 , H01L21/311
Abstract: A LIQUID COMPOSITION FREE FROM N-ALKYLPYRROLIDONES AND HYDROXYL AMINE AND ITS DERIVATIVES, HAVING A DYNAMIC SHEAR VISCOSITY AT 50° C. OF FROM 1 TO 10 MPAS AS MEASURED BY ROTATIONAL VISCOMETRY AND COMPRISING BASED ON THE COMPLETE WEIGHT OF THE COMPOSITION, (A) OF FROM 40 TO 99.95% BY WEIGHT OF A POLAR ORGANIC SOLVENT EXHIBITING IN THE PRESENCE OF DISSOLVED TETRAMETHYLAMMONIUM HYDROXIDE (B) A CONSTANT REMOVAL RATE AT 50° C. FOR A 30 NM THICK POLYMERIC BARRIER ANTI-REFLECTIVE LAYER CONTAINING DEEP UV ABSORBING CHROMOPHORIC GROUPS, (B) OF FROM 0.05 TO
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