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公开(公告)号：MY171093A
公开(公告)日：2019-09-25
申请号：MYPI2014002325
申请日：2013-01-25
Applicant: BASF SE
Inventor： LAUTER MICHAEL , NOLLER BASTIAN MARTEN , LI YUZHUO , LANGE ROLAND
IPC: H01L21/302 , H01L21/304 , H01L21/461 , H01L21/463
Abstract: Chemical mechanical polishing composition is provided. The composition comprises (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) a protein, and (C) an aqueous medium.
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公开(公告)号：RU2631875C2
公开(公告)日：2017-09-28
申请号：RU2014136534
申请日：2013-01-25
Applicant: BASF SE
Inventor： LI YUZHUO , NOLLER BASTIAN MARTEN , LAUTER MIKHAEL , LANGE ROLAND
IPC: C09G1/02 , B24B1/00 , C09K3/14 , H01L21/304 , H01L21/461
Abstract: Изобретениеотноситсяк композициидляхимико-механическогополирования (СМР) иееприменениюприполированииподложекполупроводниковойпромышленности. Композициясодержитчастицыоксидацерия, белок, содержащийцистеинв качествеаминокислотнойединицы, иводнуюсреду. Композицияпроявляетулучшенныеполирующиехарактеристики. 3 н. и 9 з.п. ф-лы, 1 табл.
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公开(公告)号：SG11201407168PA
公开(公告)日：2014-11-27
申请号：SG11201407168P
申请日：2013-04-29
Applicant: BASF SE
Inventor： FRANZ DIANA , NOLLER BASTIAN MARTEN
IPC: H01L21/304 , H01L21/302
Abstract: A process for the manufacture of semiconductor devices is provided. The process comprises the chemical-mechanical polishing of a substrate or layer containing at least one III-V material in the presence of a chemical-mechanical polishing composition (Q1) comprising (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) a polymer comprising at least one N-heterocycle, and (M) an aqueous medium and whereas Q1 has a pH of from 1.5 to 4.5.
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14.发明公开AQUEOUS POLISHING COMPOSITION AND PROCESS FOR CHEMICALLY MECHANICALLY POLISHING SUBSTRATES CONTAINING SILICON OXIDE DIELECTRIC AND POLYSILICON FILMS 审中-公开含水抛光组合物和方法有电介质氧化硅和多晶硅膜的化学机械抛光SUBSTRATES
公开(公告)号：EP2649144A4
公开(公告)日：2014-05-14
申请号：EP11846454
申请日：2011-12-07
Applicant: BASF SE
IPC: C09G1/02 , C09K3/14 , H01L21/321
CPC classification number: H01L21/30625 , C09G1/02 , C09K3/1409 , C09K3/1463 , H01L21/31053
Abstract: An aqueous polishing composition comprising (A) abrasive ceria particles and (B) amphiphilic nonionic surfactants selected water-soluble and water-dispersible, linear and branched polyoxyalkylene blockcopolymers of the general formula I: R[(B1)m/(B2)nY]p (I), wherein the indices and the variables have the following meaning: m, n, and p integers≧1; R hydrogen atom or monovalent or polyvalent organic residue, except C5-C20 alkyl groups; (B1) block of oxyethylene monomer units; (B2) block of substituted oxyalkylene monomer units wherein the substituents are selected from two methyl groups, alkyl groups of more than two carbon atoms and cycloalkyl, aryl, alkyl-cycloalkyl, alkyl-aryl, cycloalkyl-aryl and alkyl-cycloalkyl-aryl groups; and Y hydrogen atom or monovalent organic residue, except C5-C20 alkyl groups; with the proviso that when (B) contains more than one block (B1) or (B2) two blocks of the same type are separated by a block of the other type.
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公开(公告)号：CL2018000308A1
公开(公告)日：2018-05-11
申请号：CL2018000308
申请日：2018-02-02
Applicant: BASF SE
Inventor： RIEDIGER NADINE , NOLLER BASTIAN MARTEN , FUCHS YANNICK , VON BENTEN REBEKKA
Abstract: MICROCÁPSULAS, QUE COMPRENDEN PIRIMETANILO SÓLIDO, QUE ESTÁ RODEADO O INCRUSTADO EN UN POLÍMERO DE AMINOPLASTO, Y UNA COMPOSICIÓN QUE COMPRENDE TALES MICROCÁPSULAS.
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Patent Agency Ranking
公开(公告)号：RU2605941C2
公开(公告)日：2016-12-27
申请号：RU2014107763
申请日：2012-07-30
Applicant: BASF SE
Inventor： NOLLER BASTIAN MARTEN , DRESHER BETTINA , ZHILLO KRISTOF , LI JUZHUO
IPC: C09G1/02 , C09G1/04 , C09K3/14 , H01L21/304
Abstract: Изобретениеотноситсяк композициидляхимико-механическогополирования (ХМП) ик ееприменениюдляполированияподложекдляполупроводниковойпромышленности. Способизготовленияполупроводниковыхустройстввключаетхимико-механическоеполированиеэлементарногогерманияи/илиматериала SiGe, вкотором 0,1≤x
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公开(公告)号：IN1603CHN2014A
公开(公告)日：2015-05-08
申请号：IN1603CHN2014
申请日：2014-02-28
Inventor： NOLLER BASTIAN MARTEN , DRESCHER BETTINA , GILLOT CHRISTOPHE
IPC: B24B29/02
Abstract: 1 xxA process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of elemental germanium and/or SiGe material with 0.1 = x
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公开(公告)号：SG11201600360YA
公开(公告)日：2016-02-26
申请号：SG11201600360Y
申请日：2014-07-08
Applicant: BASF SE
Inventor： LAUTER MICHAEL , LI YUZHUO , NOLLER BASTIAN MARTEN , LANGE ROLAND , REICHARDT ROBERT , LAN YONGQING , BOYKO VOLODYMYR , KRAUS ALEXANDER , SEYERL JOACHIM VON , USMAN IBRAHIM SHEIK ANSAR , SIEBERT MAX , HARTNAGEL KRISTINE , DENGLER JOACHIM , HILLESHEIM NINA SUSANNE
Abstract: Described is a chemical-mechanical polishing (CMP) composition comprising abrasive particles containing ceria.
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公开(公告)号：SG10201510122PA
公开(公告)日：2016-01-28
申请号：SG10201510122P
申请日：2011-12-07
Applicant: BASF SE
Abstract: An aqueous polishing composition comprising (A) abrasive ceria particles and (B) amphiphilic nonionic surfactants selected water-soluble and water-dispersible, linear and branched polyoxyalkylene blockcopolymers of the general formula I: R[(B1)m/(B2)nY]p (I), wherein the indices and the variables have the following meaning: m, n, and p integers≧1; R hydrogen atom or monovalent or polyvalent organic residue, except C5-C20 alkyl groups; (B1) block of oxyethylene monomer units; (B2) block of substituted oxyalkylene monomer units wherein the substituents are selected from two methyl groups, alkyl groups of more than two carbon atoms and cycloalkyl, aryl, alkyl-cycloalkyl, alkyl-aryl, cycloalkyl-aryl and alkyl-cycloalkyl-aryl groups; and Y hydrogen atom or monovalent organic residue, except C5-C20 alkyl groups; with the proviso that when (B) contains more than one block (B1) or (B2) two blocks of the same type are separated by a block of the other type.
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公开(公告)号：SG11201407520XA
公开(公告)日：2014-12-30
申请号：SG11201407520X
申请日：2013-05-21
Applicant: BASF SE
Inventor： NOLLER BASTIAN MARTEN , GILLOT CHRISTOPHE , FRANZ DIANA
IPC: C09G1/02 , H01L21/304 , H01L21/306
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