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    PHOTOSENSITIVE BOTTOM ANTI-REFLECTIVE COATINGS
    12.
    发明申请
    PHOTOSENSITIVE BOTTOM ANTI-REFLECTIVE COATINGS 审中-公开
    感光底漆抗反射涂料

    公开(公告)号：WO2004012239A3

    公开(公告)日：2004-06-10

    申请号：PCT/US0324100

    申请日：2003-07-28

    Applicant: BREWER SCIENCE INC

    Inventor： GUERRERO DOUGLAS J

    IPC: C08G64/08 ,  C08G64/16 ,  C08G73/02 ,  C08G75/23 ,  C08L69/00 ,  C08L81/06 ,  G03F7/09 ,  G03C1/492 ,  G03C1/76 ,  G03C1/825

    CPC classification number: G03F7/091 ,  C08G64/081 ,  C08G64/1608 ,  C08G64/165 ,  C08G73/0246 ,  C08G73/026 ,  C08G75/23 ,  C08L69/00 ,  C08L81/06 ,  Y10T428/31507 ,  Y10T428/31551 ,  C08L2666/18

    Abstract: Anti-reflective compositions and methods of using these compositions to form circuits are provided. The compositions comprise a polymer dissolved or dispersed in a solvent system. Preferred polymers include polycarbonates, polysulfonyl esters, polycarbonate sulfones, and mixtures thereof. The compositions can be applied to a silicon wafer or other substrate to form a cured or hardened layer which is initially insoluble in typical photoresist developing solutions. Upon exposure to light, the cured or hardened layers become soluble in photoresist developing solutions so that the layer can be selectively removed along with the developed photoresist layer, thus eliminating the need for a separate removal step.

    Abstract translation: 提供了抗反射组合物和使用这些组合物形成电路的方法。 组合物包含溶解或分散在溶剂体系中的聚合物。 优选的聚合物包括聚碳酸酯，聚磺酰基酯，聚碳酸酯砜及其混合物。 组合物可以施加到硅晶片或其它基底上以形成固化或硬化层，其最初不溶于典型的光刻胶显影溶液。 在曝光时，固化或硬化的层变得可溶于光致抗蚀剂显影溶液中，使得可以与显影的光致抗蚀剂层一起选择性地除去该层，因此不需要单独的去除步骤。

    POLYMERIC ANTIREFLECTIVE COATINGS DEPOSITED BY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION
    18.
    发明公开
    POLYMERIC ANTIREFLECTIVE COATINGS DEPOSITED BY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION 审中-公开
    DURCHPLASMAVERSTÄRKTECVD-ABSCHEIDUNG ABGESCHIEDENE ANTIREFLEKTIERENDE POLYMERBESCHICHTUNGEN

    公开(公告)号：EP1397260A4

    公开(公告)日：2006-03-08

    申请号：EP01946350

    申请日：2001-06-12

    Applicant: BREWER SCIENCE INC

    Inventor： SABNIS RAM ,  GUERRERO DOUGLAS J

    IPC: G03F7/09 ,  G03F7/11 ,  C08F2/46 ,  C23C14/12 ,  C23C14/28 ,  G02B1/11 ,  H01L21/027

    CPC classification number: G02B1/11 ,  G03F7/091 ,  H01L21/0276

    Abstract: An improved method for applying polymeric antireflective coatings to substrate surfaces and the resulting precursor structures are provided. Broadly, the methods comprise plasma enhanced chemical vapor depositing (PECVD) a polymer on the substrate surfaces. The most preferred starting monomers are 4-fluorostyrene,2,3,4,5,6-pentafluorostyrene, and allylpentafluorobenzene. The PECVD processes comprise subjecting the monomers to sufficient electric current and pressure so as to cause the monomers to sublime to form a vapor which is then changed to the plasma state by application of an electric current. The vaporized monomers are subsequently polymerized onto a substrate surface in a deposition chamber. The inventive methods are useful for providing highly conformal antireflective coatings on large surface substrates having super submicron (0.25 mu m or smaller) features. The process provides a much faster deposition rate than conventional chemical vapor deposition (CVD) methods, is environmentally friendly, and is economical.

    Abstract translation: 提供了一种将聚合物抗反射涂层应用于基底表面和所得前体结构的改进方法。 广泛地，这些方法包括在衬底表面上的等离子体增强化学气相沉积（PECVD）聚合物。 最优选的起始单体是4-氟苯乙烯，2,3,4,5,6-五氟苯乙烯和烯丙基五氟苯。 PECVD方法包括使单体经受足够的电流和压力，以使单体升华以形成蒸汽，然后通过施加电流将其转化为等离子体状态。 蒸发的单体随后在沉积室中聚合到基底表面上。 本发明的方法可用于在具有超亚微米（0.25μm或更小）特征的大表面基底上提供高保形抗反射涂层。 该方法提供比常规化学气相沉积（CVD）方法更快的沉积速率，是环境友好的并且是经济的。

    SPIN-ON SPACER MATERIALS FOR DOUBLE- AND TRIPLE-PATTERNING LITHOGRAPHY
    19.
    发明公开
    SPIN-ON SPACER MATERIALS FOR DOUBLE- AND TRIPLE-PATTERNING LITHOGRAPHY 审中-公开
    SPIN-ON中间层的材料与双重和三重结构性光刻

    公开(公告)号：EP2374145A4

    公开(公告)日：2012-11-07

    申请号：EP10729436

    申请日：2010-01-06

    Applicant: BREWER SCIENCE INC

    Inventor： LIN QIN ,  PULIGADDA RAMA ,  CLAYPOOL JAMES ,  GUERRERO DOUGLAS J ,  SMITH BRIAN

    IPC: H01L21/027 ,  G03F7/20 ,  G03F7/40

    CPC classification number: H01L21/0337 ,  C08G77/20 ,  G03F7/40 ,  H01L21/0338 ,  H01L21/3121

    Abstract: Novel double- and triple-patterning methods are provided. The methods involve applying a shrinkable composition to a patterned template structure (e.g., a structure having lines) and heating the composition. The shrinkable composition is selected to possess properties that will cause it to shrink during heating, thus forming a conformal layer over the patterned template structure. The layer is then etched to leave behind pre-spacer structures, which comprise the features from the pattern with remnants of the shrinkable composition adjacent the feature sidewalls. The features are removed, leaving behind a doubled pattern. In an alternative embodiment, an extra etch step can be carried out prior to formation of the features on the template structure, thus allowing the pattern to be tripled rather than doubled.

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