公开(公告)号：US20180013037A1

公开(公告)日：2018-01-11

申请号：US15699658

申请日：2017-09-08

Applicant: EPISTAR CORPORATION

Inventor： Hsin-Chih CHIU ,  Shih-I CHEN ,  You-Hsien CHANG ,  Hao-Min KU ,  Ching-Yuan TSAI ,  Kuan-Chih KUO ,  Chih-Hung HSIAO ,  Rong-Ren LEE

IPC: H01L33/22 ,  H01L33/10 ,  H01L33/02 ,  H01L33/38 ,  H01L33/24 ,  H01L33/30 ,  H01L33/42 ,  H01L33/14 ,  H01L33/20 ,  H01L33/40

CPC classification number: H01L33/22 ,  H01L33/02 ,  H01L33/025 ,  H01L33/10 ,  H01L33/145 ,  H01L33/20 ,  H01L33/24 ,  H01L33/30 ,  H01L33/305 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42

Abstract: A semiconductor light-emitting device comprises an epitaxial structure comprising an main light-extraction surface, a lower surface opposite to the main light-extraction surface, a side surface connecting the main light-extraction surface and the lower surface, a first portion and a second portion between the main light-extraction surface and the first portion, wherein a concentration of a doping material in the second portion is higher than that of the doping material in the first portion and, in a cross-sectional view, the second portion comprises a first width near the main light-extraction surface and second width near the lower surface, and the first width is smaller than the second width.

公开(公告)号：US20170373219A1

公开(公告)日：2017-12-28

申请号：US15683041

申请日：2017-08-22

Applicant: EPISTAR CORPORATION

Inventor： Hao-Min KU ,  You-Hsien CHANG ,  Shih-I CHEN ,  Fu-Chun TSAI ,  Hsin-Chih CHIU

IPC: H01L33/00 ,  H01L21/683 ,  H01L33/62

Abstract: A method of transferring multiple semiconductor devices from a first substrate to a second substrate comprises the steps of forming the multiple semiconductor devices adhered on the first substrate, wherein the multiple semiconductor devices comprises a first semiconductor device and a second semiconductor device, and the first semiconductor device and the second semiconductor device have a first gap between thereof; separating the first semiconductor device and the second semiconductor device from the first substrate; sticking the first semiconductor device and the second semiconductor device to a surface of the second substrate, wherein the first semiconductor device and the second semiconductor device have a second gap between thereof; wherein the first gap and the second gap are different.

公开(公告)号：US20170033259A1

公开(公告)日：2017-02-02

申请号：US15295226

申请日：2016-10-17

Applicant: EPISTAR CORPORATION

Inventor： Chih-Chiang LU ,  Yi-Ming CHEN ,  Chun-Yu LIN ,  Ching-Pei LIN ,  Chung-Hsun CHIEN ,  Chien-Fu HUANG ,  Hao-Min KU ,  Min-Hsun HSIEH ,  Tzu-Chieh HSU

IPC: H01L33/00 ,  H01L21/683 ,  H01L33/62

CPC classification number: H01L33/0079 ,  H01L21/6835 ,  H01L21/6836 ,  H01L33/0095 ,  H01L33/62 ,  H01L2221/68318 ,  H01L2221/68363 ,  H01L2221/68381 ,  H01L2933/0066

Abstract: A semiconductor device comprises a substrate, a first semiconductor unit on the substrate, and an first adhesion structure between the substrate and the first semiconductor unit, and directly contacting the first semiconductor unit and the substrate, wherein the first adhesion structure comprises an adhesion layer and a sacrificial layer, and the adhesion layer and the sacrificial layer are made of different materials, and wherein an adhesion between the first semiconductor unit and the adhesion layer is different from that between the first semiconductor unit and the sacrificial layer.

Abstract translation: 半导体器件包括衬底，衬底上的第一半导体单元以及衬底和第一半导体单元之间的第一粘附结构，并且直接接触第一半导体单元和衬底，其中第一粘附结构包括粘附层和 牺牲层，并且粘合层和牺牲层由不同的材料制成，并且其中第一半导体单元和粘附层之间的粘附力与第一半导体单元和牺牲层之间的粘合不同。