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    High Selectivity, Low Damage Electron-Beam Delineation Etch
    11.
    发明公开
    High Selectivity, Low Damage Electron-Beam Delineation Etch 有权
    Elektronenstrahl-Skizzenätzungmit hoherSelektivitätund geringerSchädigung

    公开(公告)号：EP2214200A2

    公开(公告)日：2010-08-04

    申请号：EP10152144.1

    申请日：2010-01-29

    Applicant: FEI COMPANY

    Inventor： Randolph, Steven ,  Chandler, Clive

    IPC: H01L21/311

    CPC classification number: H01L21/306 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/32137

    Abstract: A method and apparatus for selective etching a substrate using a focused beam. For example, multiple gases may be used that are involved in competing beam-induced and spontaneous reactions, with the result depending on the materials on the substrate. The gases may include, for example, an etchant gas and an auxiliary gas that inhibits etching.

    Abstract translation: 一种使用聚焦光束选择性蚀刻衬底的方法和装置。 例如，可以使用涉及光束诱导和自发反应的多种气体，结果取决于衬底上的材料。 气体可以包括例如蚀刻剂气体和抑制蚀刻的辅助气体。

    CHARGED PARTICLE BEAM SOURCE
    12.
    发明公开
    CHARGED PARTICLE BEAM SOURCE 审中-公开

    公开(公告)号：EP3886137A1

    公开(公告)日：2021-09-29

    申请号：EP21163852.3

    申请日：2021-03-22

    Applicant: FEI Company

    Inventor： Liu, Kun ,  Randolph, Steven

    IPC: H01J1/148 ,  H01J1/92 ,  H01J37/065

    Abstract: A charged particle beam source, such as for use in an electron microscope, can include an electrically conductive support member coupled to a base, a mounting member coupled to the support member and defining a bore, and an emitter member received in the bore and retained by a fixative material layer flowed around the emitter member in the bore.

    Method of processing a workpiece in a vacuum chamber
    15.
    发明公开
    Method of processing a workpiece in a vacuum chamber 有权
    Verfahren zur Verarbeitung einerWerkstückes在einer Vakuumkammer

    公开(公告)号：EP2741075A2

    公开(公告)日：2014-06-11

    申请号：EP13195225.1

    申请日：2013-12-02

    Applicant: FEI COMPANY

    Inventor： Botman, Aurélien ,  Randolph, Steven ,  Utlaut, Mark

    IPC: G01N23/225

    CPC classification number: B05D1/26 ,  C25D5/024 ,  C25F3/14 ,  G01N23/225 ,  Y10T137/0324

    Abstract: Methods of dispensing a small amount of liquid onto a work piece includes in some embodiments known providing a microscopic channel for the liquid to flow from the nanodispenser. In some embodiments, dispensing the liquid includes dispensing the liquid using a nanodispenser have at least one slit extending to the tip. Some methods include controlling the rate of evaporation or the rate of liquid flow to establish an equilibrium producing a bubble of a desired size.

    Abstract translation: 将少量液体分配到工件上的方法包括在一些实施方案中已知提供用于使液体从纳米分配器流出的微观通道。 在一些实施例中，分配液体包括使用具有延伸到尖端的至少一个狭缝的纳米分配器来分配液体。 一些方法包括控制蒸发速率或液体流速以建立产生所需尺寸的气泡的平衡。

    Beam-induced deposition of low-resistivity material
    17.
    发明公开
    Beam-induced deposition of low-resistivity material 审中-公开
    Strahlinduzierte Abscheidung von材料mit niedrigem Widerstand

    公开(公告)号：EP2481829A2

    公开(公告)日：2012-08-01

    申请号：EP12152793.1

    申请日：2012-01-27

    Applicant: FEI Company

    Inventor： Randolph, Steven ,  Chandler, Clive

    IPC: C23C16/34 ,  C23C16/40 ,  C23C16/48 ,  H01J37/317

    CPC classification number: C23C16/486 ,  C23C16/047 ,  C23C16/18 ,  C23C16/34 ,  C23C16/407 ,  H01J2237/31732 ,  H01L21/28556 ,  H01L21/76877 ,  H01L21/76892

    Abstract: An improved method of beam deposition to deposit a low-resistivity metal. Preferred embodiments of the present invention use a novel focused ion beam induced deposition precursor to deposit low-resistivity metallic material such as tin. Applicants have discovered that by using a methylated or ethylated metal such as hexamethylditin as a precursor, material can be deposited having a resistivity as low as 40 µΩ·cm.

    Abstract translation: 一种改进的光束沉积方法来沉积低电阻率金属。 本发明的优选实施方案使用新颖的聚焦离子束诱导沉积前体来沉积诸如锡的低电阻率金属材料。 申请人已经发现，通过使用甲基化或乙基化金属如六甲基锡作为前体，可以沉积具有低至40μΩcm的电阻率的材料。

    ATTACHMENT OF NANO-OBJECTS TO BEAM-DEPOSITED STRUCTURES
    19.
    发明公开
    ATTACHMENT OF NANO-OBJECTS TO BEAM-DEPOSITED STRUCTURES 审中-公开
    纳米物体附着到束流沉积结构

    公开(公告)号：EP3243931A1

    公开(公告)日：2017-11-15

    申请号：EP16187654.5

    申请日：2016-09-07

    Applicant: FEI Company

    Inventor： Kianinia, Mehran ,  Shimoni, Olga ,  Aharonovich, Igor ,  Lobo, Charlene ,  Toth, Milos ,  Randolph, Steven ,  Chandler, Clive

    IPC: C23F4/02 ,  C25D5/02 ,  H01J37/18 ,  H01J37/30

    Abstract: Beam-induced deposition decomposes a precursor at precise positions on a surface. The surface is processed to provide linker groups on the surface of the deposit, and the sample is processed to attach nano-objects to the linker groups. The nano-objects are used in a variety of application. When a charged particle beam is used to decompose the precursor, the charged particle beam can be used to form an image of the surface with the nano-objects attached.

    Abstract translation: 光束诱导沉积在表面上的精确位置分解前体。 处理表面以在沉积物的表面上提供连接基团，并且处理样品以将纳米物体连接至连接基团。 纳米物体用于各种应用。 当使用带电粒子束来分解前体时，带电粒子束可以用来形成附着有纳米物体的表面的图像。

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