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    12.
    发明专利
    未知

    公开(公告)号：DE2555744A1

    公开(公告)日：1976-09-23

    申请号：DE2555744

    申请日：1975-12-11

    Applicant: IBM

    Inventor： LOEFFLER KARL HEINZ ,  PFEIFFER HANS CHRISTIAN

    IPC: H01J37/09 ,  H01J37/141 ,  H01J37/147 ,  H01J37/30 ,  H01L21/027 ,  H01J37/14

    Abstract: A shielded magnetic lens and deflection yoke structure for an electron beam column which minimizes aberrations in the lens system caused by winding asymmetry in the field coil, as well as aberrations due to eddy currents created within the magnetic circuit of the lens by interaction with the field of the deflection yoke. The shield includes a polepiece structure for the magnetic electron lens generally comprising a hollow cylinder formed of a plurality of precisely machined magnetic discs stacked concentrically with precisely machined nonmagnetic discs in alternating sequence with the lens coil positioned adjacent the periphery of the cylinder and the deflection yoke positioned within the cylinder or proximate to either end thereof. In one preferred embodiment of the invention the magnetic discs are formed of a nonconductive material such as ferrite and the nonmagnetic discs are formed of alumina.

    13.
    发明专利
    未知

    公开(公告)号：DE69432098D1

    公开(公告)日：2003-03-13

    申请号：DE69432098

    申请日：1994-11-24

    Applicant: IBM

    Inventor： PFEIFFER HANS CHRISTIAN ,  STICKEL WERNER

    IPC: G03F7/20 ,  H01J37/317 ,  H01L21/027 ,  H01J37/302 ,  H01J37/304 ,  H01J37/30

    Abstract: An electron beam system for direct writing applications combining the parallel throughput of a projection system and the stitching capability of a probe-forming system employs an electron gun to illuminate an initial aperture uniformly, a first set of controllable deflectors to scan the beam over the reticle parallel to the system axis, impressing the pattern of a subfield of the reticle in each exposure, in which a first variable axis lens focuses an image of the initial aperture on the reticle, a second variable axis lens collimates the patterned beam, a second set of controllable deflectors to bring the beam back to an appropriate position above the wafer, and a third variable axis lens to focus an image of the reticle subfield on the wafer, together with correction elements to apply aberration corrections that may vary with each subfield, thereby providing high throughput from the use of parallel processing of the order of 10 pixels per subfield with the low aberration feature of the variable axis lens and the ability to tailor location-dependent corrections that are associated with gaussian systems that stitch the image pixel by pixel.

    14.
    发明专利
    未知

    公开(公告)号：DE3878751T2

    公开(公告)日：1993-09-23

    申请号：DE3878751

    申请日：1988-05-03

    Applicant: IBM

    Inventor： DAVIS DONALD EUGENE ,  DORAN SAMUEL KAY ,  PERKINS MERLYN HAROLD ,  PFEIFFER HANS CHRISTIAN

    IPC: G03F7/20 ,  H01J37/304 ,  H01J37/317 ,  H01L21/027 ,  H01L21/30 ,  H01J37/302 ,  H01J37/30

    Abstract: This system employs writing of lithographic patterns with a shaped electron beam exposure system (10) which minimizes the time wasted by workpiece positional requirements. The writing field contains an array of sub-fields written in a raster sequence. The large width of the writing field (37) provided by the VAIL system reduces the number of mechanical scans required to write the pattern on the workpiece which further reduces the time required for workpiece positioning. When patterns are being superimposed over previously written patterns, registration is employed. This system includes a registration field (36) confined to local areas on the workpiece (7), which is larger than the writing field, without requiring change in focus and without requiring the mechanical system comprising the X-Y work table to change speed during the registration and reregistration of the various fields on a semiconductor wafer or mask. The registration field can be larger than the writing field, because the quality requirements demanded from the shaped electron beam(B) are less for detecting the locations of such registration (39) marks at the various locations on the wafer.

    15.
    发明专利
    未知

    公开(公告)号：DE3878751D1

    公开(公告)日：1993-04-08

    申请号：DE3878751

    申请日：1988-05-03

    Applicant: IBM

    Inventor： DAVIS DONALD EUGENE ,  DORAN SAMUEL KAY ,  PERKINS MERLYN HAROLD ,  PFEIFFER HANS CHRISTIAN

    IPC: G03F7/20 ,  H01J37/304 ,  H01J37/317 ,  H01L21/027 ,  H01L21/30 ,  H01J37/302 ,  H01J37/30

    Abstract: This system employs writing of lithographic patterns with a shaped electron beam exposure system (10) which minimizes the time wasted by workpiece positional requirements. The writing field contains an array of sub-fields written in a raster sequence. The large width of the writing field (37) provided by the VAIL system reduces the number of mechanical scans required to write the pattern on the workpiece which further reduces the time required for workpiece positioning. When patterns are being superimposed over previously written patterns, registration is employed. This system includes a registration field (36) confined to local areas on the workpiece (7), which is larger than the writing field, without requiring change in focus and without requiring the mechanical system comprising the X-Y work table to change speed during the registration and reregistration of the various fields on a semiconductor wafer or mask. The registration field can be larger than the writing field, because the quality requirements demanded from the shaped electron beam(B) are less for detecting the locations of such registration (39) marks at the various locations on the wafer.

    ELECTRON BEAM PROJECTION SYSTEM
    17.
    发明专利
    ELECTRON BEAM PROJECTION SYSTEM 未知

    公开(公告)号：DE3162439D1

    公开(公告)日：1984-04-05

    申请号：DE3162439

    申请日：1981-09-23

    Applicant: IBM

    Inventor： LANGNER GUENTHER OTTO ,  PFEIFFER HANS CHRISTIAN ,  STURANS MARIS ANDRIS

    IPC: H01J37/141 ,  H01J37/147 ,  H01J37/153 ,  H01J37/30 ,  H01J37/317 ,  H01J29/00

    Abstract: The electron beam projection system includes means for producing an electron beam, means (43, 45) for deflecting the beam (39), a magnetic projection lens (33) having rotational symmetry for focusing the deflected beam and a pair of magnetic compensation yokes (55, 57) positioned within the bore of the projection lens means (33). The pair of compensation yokes (55, 57) has coil dimensions such that, in combination, they produce a magnetic compensation field proportional to the first derivative of the axial magnetic field strength distribution curve of the projection lens (33). Upon application of current to the pair of compensation yokes (55, 57) the electron optical axis of the projection lens (33) shifts to the position of the deflected beam so that the electron beam (39) remains coincident with the shifted electron optical axis and lands perpendicular to a target (59).

    19.
    发明专利
    未知

    公开(公告)号：DE2449000A1

    公开(公告)日：1975-07-03

    申请号：DE2449000

    申请日：1974-10-15

    Applicant: IBM

    Inventor： PFEIFFER HANS CHRISTIAN

    IPC: H01J37/04 ,  H01J37/147

    Abstract: An improved electron beam tube system is described wherein the electron beam magnetic deflection yoke is physically located the lens pole piece of the final or projection magnetic lens of the beam tube.

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