公开(公告)号：JP2003241383A

公开(公告)日：2003-08-27

申请号：JP2002046520

申请日：2002-02-22

Applicant: JSR CORP ,  IBM

Inventor： NISHIMURA YUKIO ,  HOSHI MICHIAKI ,  SOYANO AKIMASA ,  KAJITA TORU ,  ALLEN ROBERT D ,  VARANASI PUSHKARA RAO

IPC: G03F7/039 ,  C08F220/26 ,  C08F220/34 ,  C08F220/38 ,  C08F222/06 ,  C08F232/08 ,  G03F7/004 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a radiation-sensitive resin composition excellent in contrast, capable of forming a fine resist pattern with a high degree of accuracy and excellent also in transparency to a radiation, sensitivity and resolution. SOLUTION: The radiation-sensitive resin composition comprises (A) a resin comprising an acid-dissociable group-containing norbornene compound typified by 5-[(1-methylcyclohexyl)oxycarbonyl]norbornene or 5-(2-methyl-1- adamantyloxycarbonyl)norbornene and maleic anhydride, (B) a radiation-sensitive acid generator and (C) a compound typified by a di-t-butyl 1,3- adamantanedicarboxylate or 2,5-dimethyl-2,5-di(1-adamantylcarbonyloxy)hexane. Preferably the resin (A) further comprises a polar group-containing alicyclic ester of (meth)acrylic acid typified by 3-hydroxy-1-adamantyl (meth)acrylate. COPYRIGHT: (C)2003,JPO

公开(公告)号：CA2586864A1

公开(公告)日：2006-05-18

申请号：CA2586864

申请日：2005-11-14

Applicant: IBM ,  ST JEAN PHOTOCHIMIE INC

Inventor： KHOJASTEH MAHMOUD ,  VARANASI PUSHKARA RAO ,  FEGHALI KHALIL ,  MOTALLEBI SHAHROKH ,  BOUCHARD LUC ,  MARCOTTE IAN ,  DESILETS DENIS

IPC: C07C69/74 ,  G03F7/20 ,  H01L21/308

公开(公告)号：JP2004012554A

公开(公告)日：2004-01-15

申请号：JP2002162218

申请日：2002-06-03

Applicant: JSR CORP ,  IBM

Inventor： ISHII HIROYUKI ,  NISHIMURA ISAO ,  NAKAMURA ATSUSHI ,  BRUNSVOLD WILLIAM R ,  WENJII LEE ,  VARANASI PUSHKARA RAO

IPC: G03F7/004 ,  C08F220/10 ,  G03F7/039 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a radiation-sensitive resin composition excellent in various properties including transparency to a radiation, sensitivity, resolution, dry etching resistance and pattern shape, and useful as a chemically amplified resist. SOLUTION: The radiation-sensitive resin composition comprises (A) an alkali-insoluble or slightly alkali-soluble resin which contains an acid dissociation group and becomes alkali-soluble when the acid dissociation group dissociates and (B) a radiation-sensitive acid generator typified by triphenylsulfonium bis(nonafluoro-n-butanesulfonyl)imidate, 1-(4-n-butoxynaphthalen-1-yl)tetrahydrothiophenium bis(nonafluoro-n-butanesulfonyl)imidate or 1-(3,5-dimethyl-4-hydroxyphenyl)tetrahydrothiophenium tris(nonafluoro-n-butanesulfonyl)methanide. COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2003241384A

公开(公告)日：2003-08-27

申请号：JP2002046679

申请日：2002-02-22

Applicant: JSR CORP ,  IBM ,  JSR MICRO INC

Inventor： NISHIMURA YUKIO ,  YAMAMOTO MASASHI ,  ISHII HIROYUKI ,  MARK SLEZAK ,  BRUNSVOLD WILLIAM R ,  MARGARET C LAWSON ,  CHEN KUANG-JUNG ,  KWONG RANEE W ,  VARANASI PUSHKARA RAO

IPC: G03F7/039 ,  C08F220/18 ,  C08F220/28 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a radiation-sensitive resin composition having high transparency to a radiation and useful as a chemically amplified resist excellent in sensitivity, resolution, dry etching resistance and pattern shape. SOLUTION: The radiation-sensitive resin composition comprises (A) a resin typified by a copolymer of 2-methyl-2-adamantyl methacrylate, 3-hydroxy-1- adamantyl methacrylate and a methacrylic ester of formula (1), (B) a radiation- sensitive acid generator typified by triphenylsulfonium nonafluoro-n- butanesulfonate or 1-(4-n-butoxy-1-naphthyl)tetrahydrothiophenium perfluoro-n- octanesulfonate and (C) a solvent. Preferably the solvent (C) includes at least one selected from the group comprising propylene glycol monomethyl ether acetate, 2-heptanone and cyclohexanone. COPYRIGHT: (C)2003,JPO

公开(公告)号：JP2002014472A

公开(公告)日：2002-01-18

申请号：JP2001130763

申请日：2001-04-27

Applicant: IBM

Inventor： WALLOW THOMAS I ,  ROBERT D ALLEN ,  PHILIP JOE BROCK ,  DIPIETRO RICHARD ANTHONY ,  ITO HIROSHI ,  TRUONG HOA DAO ,  VARANASI PUSHKARA RAO

IPC: G03F7/004 ,  G03F7/039 ,  G03F7/11 ,  G03F7/40 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a photoresist composition capable of ensuring suitability to high resolution lithography using imaging radiation of 193 nm and to provide a lithographic process using the photoresist composition. SOLUTION: An acid catalyzed positive photoresist composition is provided by using a resist composition containing a cycloolefin polymer with a cydoolefin monomer having a lactone moiety. The photoresist can be imaged with radiation of 193 nm and is developed to form a photoresist structure with improved development characteristics and improved etching resistance. The monomer has no oxygen atom between the lactone moiety and a cycloolefin ring. The lactone moiety is appropriately spirolactone (5- or 6-membered ring) which bonds directly to the cycloolefin ring.

公开(公告)号：JP2001356482A

公开(公告)日：2001-12-26

申请号：JP2001130713

申请日：2001-04-27

Applicant: IBM

Inventor： ROBERT D ALLEN ,  PHILIP JOE BROCK ,  DIPIETRO RICHARD ANTHONY ,  ITO HIROSHI ,  VARANASI PUSHKARA RAO

IPC: C08F222/06 ,  C08F222/40 ,  C08F232/00 ,  C08K5/00 ,  C08L45/00 ,  G03F7/004 ,  G03F7/039 ,  G03F7/11 ,  G03F7/40 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a photoresist composition having so improved resolution as to enable high resolution lithography performance using imaging radiation of 193 nm. SOLUTION: The photoresist composition is obtained by using an imaging copolymer so as to improve a known alternating copolymer-base photoresist. The imaging copolymer is characterized by the presence of at least a third monomer which enhances the resolution of the photoresist. The performance of the composition is further improved by using a bulky acid active protective group on the imaging copolymer. An alkyl functional cyclicolefin is particularly suitable for use as the third monomer.

公开(公告)号：DE10118902A1

公开(公告)日：2002-03-14

申请号：DE10118902

申请日：2001-04-18

Applicant: IBM

Inventor： WALLOW THOMAS I ,  ALLEN ROBERT D ,  BROCK PHILLIP JOE ,  DI PIETRO RICHARD ANTHONY ,  ITO HIROSHI ,  TRUONG HOA DAO ,  VARANASI PUSHKARA RAO

IPC: G03F7/004 ,  G03F7/039 ,  G03F7/11 ,  G03F7/40 ,  H01L21/027 ,  G03F7/038

Abstract: Acid-catalyzed positive photoresist compositions which are imageable with 193 nm radiation (and possibly other radiation) and are developable to form photoresist structures of improved development characteristics and improved etch resistance are enabled by the use of resist compositions containing cyclic olefin polymer having a cyclic olefin monomer having a lactone moiety, the monomer having no oxygen atoms intervening between the lactone moiety and a ring of the cyclic olefin. Preferred lactone moieties are spirolactones (having a 5 or 6 membered ring) directly to a cyclic olefin ring.

公开(公告)号：JP2004029089A

公开(公告)日：2004-01-29

申请号：JP2002181130

申请日：2002-06-21

Applicant: Internatl Business Mach Corp ,  Jsr Corp ,  Jsr株式会社 ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： NISHIMURA YUKIO ,  NISHIMURA ISAO ,  SAITO AKIO ,  KOBAYASHI HIDEKAZU ,  TOMAS I WOROU ,  ALLEN ROBERT D ,  VARANASI PUSHKARA RAO

IPC: G03F7/039 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a radiation-sensitive resin composition having high transparency to a radiation and suitable for use as a chemically sensitized resist excellent in basic properties as a resist, such as sensitivity, resolution, dry etching resistance and pattern shape. SOLUTION: The radiation-sensitive resin composition comprises (A) an acid-dissociating group-containing resin containing a (meth)acrylic ester repeating unit typified by a unit derived from 2-ethyladamantan-2-yl ester or 1-methylcyclopentyl ester of (meth)acrylic acid and a repeating unit having a norbornane skeleton in the backbone typified by a unit derived from 1-methylcyclopentyl ester or (2-ethyladamantan-2-yl) ester of a bicyclo[2,2,1]hept-2-ene-5-carboxylic acid and not containing a repeating unit derived from maleic anhydride and (B) a radiation-sensitive acid generator. COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2003255539A

公开(公告)日：2003-09-10

申请号：JP2002056522

申请日：2002-03-01

Applicant: JSR CORP ,  IBM

Inventor： NISHIMURA YUKIO ,  ISHII HIROYUKI ,  KOBAYASHI HIDEKAZU ,  TOMAS I WOROU ,  ALLEN ROBERT D ,  VARANASI PUSHKARA RAO

IPC: G03F7/039 ,  C08F220/18 ,  C08F220/28 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a radiation-sensitive resin composition having high transparency to a radiation and suitable for use as a chemically amplified resist excellent in basic performances as a resist, such as sensitivity, resolution, dry etching resistance and pattern shape. SOLUTION: The radiation-sensitive resin composition comprises (A) an alkali-insoluble or slightly alkali-soluble resin which has a repeating unit represented by formula (1-1) (where R 1 is H or methyl) and a (meth)acrylic repeating unit typified by 2-ethyl-2-adamantyl (meth)acrylate, 2-norbornyl-2-(meth) acryloyloxypropane or 1-methylcyclopentyl (meth)acrylate as essential units and becomes alkali-soluble under the action of an acid and (B) a radiation- sensitive acid generator. COPYRIGHT: (C)2003,JPO

公开(公告)号：JP2003248313A

公开(公告)日：2003-09-05

申请号：JP2002046974

申请日：2002-02-22

Applicant: JSR CORP ,  IBM

Inventor： NISHIMURA YUKIO ,  ISHII HIROYUKI ,  KATAOKA ATSUKO ,  TOMAS I WOROU ,  ALLEN ROBERT D ,  VARANASI PUSHKARA RAO

IPC: G03F7/039 ,  C08F222/06 ,  C08F232/08 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a new radiation-sensitive resin composition having high transparency to a radiation, excellent in basic physical properties as a resist, such as sensitivity, resolution, pattern shape and adhesion to a substrate, causing no development defect in microfabrication and capable of producing semiconductor devices in a high yield. SOLUTION: The radiation-sensitive resin composition comprises (A) an acid-dissociable group-containing resin having a repeating unit represented by formula (I) and a repeating unit represented by formula (II) and (B) a radiation-sensitive acid generator. In the formula (I), X is methylene or carbonyl; R 1 and R 2 are each H, a 1-4C alkyl, a monovalent O-containing polar group or a monovalent N-containing polar group; R 3 is H, a 1-6C alkyl, a 1-6C alkoxyl or a 2-7C alkoxycarbonyl; and n is an integer of 0-2. COPYRIGHT: (C)2003,JPO