中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

93 records (took 0.025 seconds)

    13.
    发明专利
    未知

    公开(公告)号：DE102005008476B4

    公开(公告)日：2006-12-21

    申请号：DE102005008476

    申请日：2005-02-24

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： SCHINDLER GUENTHER ,  PAMLER WERNER ,  ENGELHARDT MANFRED

    IPC: H01L23/522 ,  H01L21/768 ,  H01L27/108

    Abstract: An interconnect arrangement and fabrication method are described. The interconnect arrangement includes an electrically conductive mount substrate, a dielectric layer formed on the mount substrate, and an electrically conductive interconnect formed on the dielectric layer. At least a portion of the dielectric layer under the interconnect contains a cavity. To fabricate the interconnect arrangement, a sacrificial layer is formed on the mount substrate and the interconnect layer is formed on the sacrificial layer. The interconnect layer and the sacrificial layer are structured to produce a structured interconnect on the structured sacrificial layer. A porous dielectric layer is formed on a surface of the mount substrate and of the structured interconnect as well as the sacrificial layer. The sacrificial layer is then removed to form the cavity under the interconnect.

    Process for electrically contacting switching elements used in communications networks comprises applying a first layer on a first switching component, forming a hole in the first layer, and further processing
    15.
    发明专利
    Process for electrically contacting switching elements used in communications networks comprises applying a first layer on a first switching component, forming a hole in the first layer, and further processing 未知

    公开(公告)号：DE10129846C1

    公开(公告)日：2002-11-14

    申请号：DE10129846

    申请日：2001-06-21

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： WERNER CHRISTOPH ,  ENGELHARDT MANFRED

    IPC: H01L21/768 ,  H01L23/522 ,  H01L21/283

    Abstract: A first insulating or semiconducting layer is deposited on a switching component; a via is formed; a first spacer is placed in the hole; a second spacer is formed; a second layer is applied and removed; and a second switching component is applied. Process for electrically contacting switching elements comprises: applying a first layer made from a first insulating and/or semiconducting material on a first switching component; forming a hole in the first layer to extend up to the first switching component; arranging a first spacer (103) in the hole, the spacer consisting of a first layer system having a first metallic conducting material; forming a second spacer (106) made from a second insulating material on the first spacer; applying a second layer system made from a second conducting material on the second spacer and the first layer by filling the hole; removing the second layer system exposing the first layer and the first and second metallic conducting materials; and applying a second switching component on the exposed first layer and the first and second metallic conducting materials. An Independent claim is also included for a switching arrangement produced. Preferred Features: The first insulating material is made from silicon dioxide. The second insulating material is made from O3-TEOS-CVD. The first spacer is applied using metal organic chemical vapor deposition (MOCVD).

Patent Agency Ranking