中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

24 records (took 0.03 seconds)

    11.
    发明专利
    未知

    公开(公告)号：DE102004010902B4

    公开(公告)日：2007-01-11

    申请号：DE102004010902

    申请日：2004-03-05

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： NOELSCHER CHRISTOPH ,  KIESLICH ALBRECHT ,  PFORR RAINER ,  HENNIG MARIO

    IPC: G03F1/30 ,  G03F7/20 ,  G03F9/00

    Abstract: A mask level layout has an arrangement of lines and spaces with the spaces interconnected by a further space. The spaces are alternately acted upon with a phase deviation with respect to the spaces, where a phase edge between spaces acted upon differently arises in the region of the further space. Alternatively, the connecting space within the layout may be filled with dark regions. An additional space is inserted in a second layout representing a further mask of the same mask set. The additional space enables formation of an insulating region on a semiconductor substrate at the location where formation of a continuous isolation trench is not possible due to the phase edges or dark regions within originally connecting spaces of the first mask. The first mask can be embodied as a hybrid mask with structures according to the principle of alternating phase masks with a large process window.

    14.
    发明专利
    未知

    公开(公告)号：DE102004010902A1

    公开(公告)日：2005-09-22

    申请号：DE102004010902

    申请日：2004-03-05

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： NOELSCHER CHRISTOPH ,  KIESLICH ALBRECHT ,  PFORR RAINER ,  HENNIG MARIO

    IPC: G03F1/30 ,  G03F7/20 ,  G03F9/00 ,  G03F1/14

    Abstract: A mask level layout has an arrangement of lines and spaces with the spaces interconnected by a further space. The spaces are alternately acted upon with a phase deviation with respect to the spaces, where a phase edge between spaces acted upon differently arises in the region of the further space. Alternatively, the connecting space within the layout may be filled with dark regions. An additional space is inserted in a second layout representing a further mask of the same mask set. The additional space enables formation of an insulating region on a semiconductor substrate at the location where formation of a continuous isolation trench is not possible due to the phase edges or dark regions within originally connecting spaces of the first mask. The first mask can be embodied as a hybrid mask with structures according to the principle of alternating phase masks with a large process window.

    16.
    发明专利
    未知

    公开(公告)号：DE102006004230A1

    公开(公告)日：2007-08-09

    申请号：DE102006004230

    申请日：2006-01-30

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： HENNIG MARIO ,  PFORR RAINER ,  UNGER GERD

    IPC: G03F1/00 ,  G03F7/20 ,  G06F17/50

    Abstract: A layout is decomposed into partial patterns. An intermediate mask is drawn for each of the partial patterns. The intermediate masks are used in a mask stepper or scanner progressively for projection again into a common pattern on a test mask. A line width distribution LB(x,y) is determined from the test mask or from a test wafer exposed using the mask, and is converted into a distribution of dose corrections. The transmission T(x,y) of the respective intermediate masks is adapted based upon the calculated dose correction. This can be achieved using additional optical elements which are assigned to the intermediate masks and have shading structure elements, or by laser-induced rear-side introduction of shading elements in the quartz substrate of the intermediate masks themselves.

    17.
    发明专利
    未知

    公开(公告)号：DE102005003905A1

    公开(公告)日：2006-10-12

    申请号：DE102005003905

    申请日：2005-01-27

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： PFORR RAINER ,  MOUKARA MOLELA ,  MUELDERS THOMAS ,  HENNIG MARIO ,  ZEILER KARSTEN

    IPC: G03F7/20 ,  G03F1/00

    Abstract: An improvement of the imaging quality with simultaneous transfer of line-space gratings and peripheral structures including a MUX space is achieved using a quadrupole illumination whose poles are formed in elongate fashion and whose longitudinal axes are arranged perpendicular to the orientation of the lines of the line-space grating arranged on a mask. The structure imaging of the line-space grating is improved with regard to contrast, MEEF, and process window, while the geometrical fidelity of the peripheral structure, in particular of the MUX space, is stabilized over a wide depth of field range.

Patent Agency Ranking