公开(公告)号：WO2004036744A3

公开(公告)日：2004-07-22

申请号：PCT/US0324142

申请日：2003-08-01

Applicant: INTEL CORP

Inventor： WANG LI-PENG ,  BAR-SADEH EYAL ,  RAO VALLURI ,  HECK JOHN ,  MA QING ,  TRAN QUAN ,  TALALYEVSKY ALEXANDER ,  GINSBURG EYAL

IPC: H03H9/24 ,  H03H3/02 ,  H03H9/56 ,  H03H9/205

CPC classification number: H03H9/564 ,  H03H3/02 ,  Y10T29/42

Abstract: A film bulk acoustic resonator filter may be formed with a plurality of interconnected series and shunt film bulk acoustic resonators formed on the same membrane. Each of the film bulk acoustic resonators may be formed from a common lower conductive layer which is defined to form the bottom electrode of each film bulk acoustic resonator. A common top conductive layer may be defined to form each top electrode of each film bulk acoustic resonator. A common piezoelectric film layer, that may or may not be patterned, forms a continuous or discontinuous film.

Abstract translation: 薄膜体声波谐振器滤波器可以形成有在相同膜上形成的多个互连的串联和分流膜体声波谐振器。 每个薄膜体声波谐振器可以由共同的下导电层形成，该下导电层被限定为形成每个薄膜体声波谐振器的下电极。 可以限定公共顶部导电层以形成每个薄膜体声波谐振器的每个顶部电极。 常见的压电薄膜层可以或不可以被图案化，形成连续或不连续的薄膜。

公开(公告)号：WO03027307A2

公开(公告)日：2003-04-03

申请号：PCT/US0228443

申请日：2002-09-05

Applicant: INTEL CORP

Inventor： RAO VALLURI ,  NEUBAUER GABI ,  KIRCH STEVEN ,  YAMAKAWA MINEO ,  BERLIN ANDREW

IPC: B01L3/00 ,  C12M1/00 ,  C12M1/34 ,  C12N15/00 ,  C12N15/09 ,  C12Q1/68 ,  G01J3/44 ,  G01N21/65 ,  G01N33/53 ,  G01N33/566 ,  C12Q

CPC classification number: G01N21/6428 ,  B01L3/5027 ,  C12Q1/6869 ,  G01J3/4406 ,  G01N21/65 ,  G01N21/658 ,  G01N2021/6441 ,  G01N2021/651 ,  G01N2021/653 ,  G01N2021/655 ,  G01N2021/656 ,  C12Q2565/632 ,  C12Q2565/101 ,  C12Q2533/101 ,  C12Q2565/629 ,  C12Q2565/60

Abstract: The methods, compositions and apparatus disclosed herein are of use for nucleic acid sequence determination. The methods involve isolation of one or more nucleic acid template molecules and polymerization of a nascent complementary strand of nucleic acid, using a DNA or RNA polymerase or similar synthetic reagent. As the nascent strand is extended one nucleotide at a time, the disappearance of nucleotide precursors from solution is monitored by Raman spectroscopy or FRET. The nucleic acid sequence of the nascent strand, and the complementary sequence of the template strand, may be determined by tracking the order of incorporation of nucleotide precursors during the polymerization reaction. Certain embodiments concern apparatus comprising a reaction chamber and detection unit, of use in practicing the claimed methods. The methods, compositions and apparatus are of use in sequencing very long nucleic acid templates in a single sequencing reaction.

Abstract translation: 本文公开的方法，组合物和装置用于核酸序列测定。 所述方法包括使用DNA或RNA聚合酶或类似的合成试剂分离一个或多个核酸模板分子和核酸的新生互补链的聚合。 当新生链一次延伸一个核苷酸时，通过拉曼光谱法或FRET监测核苷酸前体从溶液中的消失。 新生链的核酸序列和模板链的互补序列可以通过跟踪聚合反应期间核苷酸前体的掺入顺序来确定。 某些实施例涉及包括在实施所要求保护的方法中使用的反应室和检测单元的装置。 方法，组合物和装置在用于在单次测序反应中测序非常长的核酸模板中有用。

公开(公告)号：GB2514022A

公开(公告)日：2014-11-12

申请号：GB201411224

申请日：2013-06-19

Applicant: INTEL CORP

Inventor： MA QING ,  EID FERAS ,  LIN KEVIN ,  SWAN JOHANNA M ,  TEH WENG HONG ,  RAO VALLURI

IPC: G01C19/56 ,  G01C19/5776

Abstract: This invention relates to inductive inertial sensors employing a magnetic drive and/or sense architecture. In embodiments, translational gyroscopes utilize a conductive coil made to vibrate in a first dimension as a function of a time varying current driven through the coil in the presence of a magnetic field. Sense coils register an inductance that varies as a function of an angular velocity in a second dimension. In embodiments, the vibrating coil causes first and second mutual inductances in the sense coils to deviate from each other as a function of the angular velocity. In embodiments, self-inductances associated with a pair of meandering coils vary as a function of an angular velocity in a second dimension. In embodiments, package build-up layers are utilized to fabricate the inductive inertial sensors, enabling package-level integrated inertial sensing advantageous in small form factor computing platforms, such as mobile devices.

公开(公告)号：DE60225157T2

公开(公告)日：2009-03-05

申请号：DE60225157

申请日：2002-09-05

Applicant: INTEL CORP

Inventor： RAO VALLURI ,  NEUBAUER GABI ,  KIRCH STEVEN ,  YAMAKAWA MINEO ,  BERLIN ANDREW

IPC: C12Q1/68 ,  B01L3/00 ,  C07H21/02 ,  C07H21/04 ,  C12M1/00 ,  C12M1/34 ,  C12N15/00 ,  C12N15/09 ,  C12P19/34 ,  G01J3/42 ,  G01J3/427 ,  G01J3/44 ,  G01N21/65 ,  G01N33/53 ,  G01N33/566

Abstract: The methods, compositions and apparatus disclosed herein are of use for nucleic acid sequence determination. The methods involve isolation of one or more nucleic acid template molecules and polymerization of a nascent complementary strand of nucleic acid, using a DNA or RNA polymerase or similar synthetic reagent. As the nascent strand is extended one nucleotide at a time, the disappearance of nucleotide precursors from solution is monitored by Raman spectroscopy or FRET. The nucleic acid sequence of the nascent strand, and the complementary sequence of the template strand, may be determined by tracking the order of incorporation of nucleotide precursors during the polymerization reaction. Certain embodiments concern apparatus comprising a reaction chamber and detection unit, of use in practicing the claimed methods. The methods, compositions and apparatus are of use in sequencing very long nucleic acid templates in a single sequencing reaction.

公开(公告)号：AU2003303106A1

公开(公告)日：2004-08-13

申请号：AU2003303106

申请日：2003-11-26

Applicant: INTEL CORP

Inventor： RAO VALLURI ,  YAMAKAWA MINEO ,  BERLIN ANDREW

IPC: B01J19/00 ,  B05D3/00 ,  C12M1/34 ,  C12Q1/68 ,  G03F1/00 ,  G03F7/20

Abstract: A method and apparatus for forming a polymer array on a substrate suitable for synthesizing polymer sequences. This includes forming an array, each location of the array having at least one strand end, forming photosensitive protection on the strand ends, and selectively scanning and modulating at least one energy beam to expose a pattern on the photosensitive protection. In some embodiments, the method further includes removing a protective group from selected strand ends based on the exposed pattern. The method then includes adding a predetermined one or more polymeric subunits to the deprotected strand ends. In some embodiments the photosensitive protection includes a layer of photoresist to cover the strand ends. Some embodiments use an ultra-violet laser.

公开(公告)号：AU2003212969A8

公开(公告)日：2003-10-13

申请号：AU2003212969

申请日：2003-02-07

Applicant: INTEL CORP

Inventor： WONG DANIEL ,  BERRY MICHELE ,  RAO VALLURI ,  MA QING ,  HECK JOHN

IPC: B81B7/00 ,  H01L23/10

Abstract: A MEMS device may be formed in a hermetic cavity by sealing a pair of semiconductor structures to one another, enclosing the MEMS device. The two structures may be coupled using surface mount techniques as one example, so that the temperatures utilized may be compatible with many MEMS applications. Electrical interconnection layers in one or the other of these structures may be utilized to allow electrical interconnections from the exterior world to the MEMS components within the cavity.

公开(公告)号：AU2002357319A1

公开(公告)日：2003-06-30

申请号：AU2002357319

申请日：2002-12-17

Applicant: INTEL CORP

Inventor： RAO VALLURI ,  MA QING ,  WANG LI-PENG

IPC: H03H3/02 ,  H03H9/17 ,  H03H9/58 ,  H03H9/15

Abstract: A film bulk acoustic resonator is formed on a substrate having a major surface. The film bulk acoustic resonator includes an elongated stack. The elongated stack includes a layer of piezoelectric material positioned between a first conductive layer deposited on a first surface of the layer of piezoelectric material, and a second conductive layer deposited on a second surface of the layer of piezoelectric material. The elongated stack is positioned substantially perpendicular with respect to the major surface of the substrate. The first and second conductive layers are placed on the layer of piezoelectric material substantially simultaneously and in one processing step. The major surface of the substrate is in a horizontal plane and the stack of the film bulk acoustic resonator is in a substantially vertical plane. The resonator structure formed may be used either as a resonator or a filter.

公开(公告)号：AU2002332897A1

公开(公告)日：2003-04-07

申请号：AU2002332897

申请日：2002-09-05

Applicant: INTEL CORP

Inventor： NEUBAUER GABI ,  YAMAKAWA MINEO ,  BERLIN ANDREW ,  KIRCH STEVEN ,  RAO VALLURI

IPC: B01L3/00 ,  C12M1/00 ,  C12M1/34 ,  C12N15/00 ,  C12N15/09 ,  C12Q1/68 ,  G01J3/44 ,  G01N21/65 ,  G01N33/53 ,  G01N33/566 ,  C07H21/02 ,  G01J3/427 ,  C07H21/04 ,  G01J3/42 ,  C12P19/34

Abstract: The methods, compositions and apparatus disclosed herein are of use for nucleic acid sequence determination. The methods involve isolation of one or more nucleic acid template molecules and polymerization of a nascent complementary strand of nucleic acid, using a DNA or RNA polymerase or similar synthetic reagent. As the nascent strand is extended one nucleotide at a time, the disappearance of nucleotide precursors from solution is monitored by Raman spectroscopy or FRET. The nucleic acid sequence of the nascent strand, and the complementary sequence of the template strand, may be determined by tracking the order of incorporation of nucleotide precursors during the polymerization reaction. Certain embodiments concern apparatus comprising a reaction chamber and detection unit, of use in practicing the claimed methods. The methods, compositions and apparatus are of use in sequencing very long nucleic acid templates in a single sequencing reaction.

公开(公告)号：DE112011105978T5

公开(公告)日：2014-09-25

申请号：DE112011105978

申请日：2011-12-19

Applicant: INTEL CORP

Inventor： THEN HAN WUI ,  CHAU ROBERT ,  RAO VALLURI ,  PILLARISETTY RAVI ,  KAVALIEROS JACK ,  RADSOSAVLJEVIC MARKO ,  DEWEY GILBERT

IPC: H01L27/085 ,  H01L21/8234 ,  H01L21/8252

Abstract: Ein-Chip-System-(SoC-)Lösungen, die einen RFIC in einen PMIC mithilfe einer Transistortechnologie integrieren, die auf Gruppe III-Nitriden (III-N) beruht und die in der Lage ist, eine hohe Ft und ebenfalls eine ausreichend hohe Durchschlagsspannung (BV) zu erzielen, um Hochspannungs- und/oder Hochleistungsschaltungen auszuführen. In Ausführungsformen ist die III-N-Transistor-Architektur skalierbar, um Leistungsverbesserungen über viele nachfolgende Gerätegenerationen tragen zu können. In Ausführungsformen ist die III-N-Transistor-Architektur in Gruppe IV-Transistor-Architekturen monolithisch integrierbar, wie Planare und nichtplanare Silicium-CMOS-Transistortechnologien. Planare und nichtplanare HEMT-Ausführungsformen mit einem oder mehreren vertieften Gates, symmetrischer Source und symmetrischem Drain, neu gewachsenen Source/Drain werden mit einem Austausch-Gate-Verfahren gebildet, das einen Betrieb im Anreicherungsmodus und gute Gate-Passivierung gestattet.

公开(公告)号：GB2447158B

公开(公告)日：2011-03-02

申请号：GB0807714

申请日：2006-12-06

Applicant: INTEL CORP

Inventor： RAO VALLURI ,  DOROS THEODORE G ,  MA QING ,  SESHAN KRISHNA ,  WANG LI-PENG

IPC: H03H3/04 ,  H03H9/02 ,  H03H9/17 ,  H03H9/58

Abstract: Multiple FBARs may be manufactured on a single wafer and later diced. Ideally, all devices formed in a wafer would have the same resonance frequency. However, due to manufacturing variances, the frequency response of the FBAR devices may vary slightly across the wafer. An RF map may be created to determine zones over the wafer where FBARs in that zone all vary from a target frequency by a similar degree. A tuning layer may be deposited over the wafer. Lithographically patterned features to the tuning layer based on the zones identified by the RF map may be used to correct the FBARs to a target resonance frequency with the FBARs still intact on the wafer.