公开(公告)号：KR101124924B1

公开(公告)日：2012-04-12

申请号：KR1020097014829

申请日：2007-12-27

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 사와다이쿠오 ,  벤체크피타 ,  오시타다츠로 ,  마츠자키가즈요시 ,  강송윤

IPC: H05H1/46 ,  H01L21/3065 ,  H01L21/205

CPC classification number: H01J37/32568 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32522 ,  H01J37/32541

Abstract: A plasma processing apparatus includes a first electrode and a second electrode so arranged in the upper portion of a processing chamber as to face a mounting table, a gas supply unit for supplying a processing gas between the first electrode and the second electrode, a RF power supply unit for applying a RF power between the first electrode and the second electrode for converting the process gas supplied between the electrodes into a plasma, and a gas exhaust unit for evacuating the inside of the processing chamber to a vacuum level from the lower portion of the processing chamber. Since the electron temperature in the plasma is low near a substrate on the mounting table, damage to the substrate caused by the plasma can be suppressed. In addition, since a metal can be used as a material for the processing chamber, the processing chamber can have good temperature controllability.

公开(公告)号：KR1020110018431A

公开(公告)日：2011-02-23

申请号：KR1020117000747

申请日：2009-07-07

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 사와다이쿠오 ,  강송윤 ,  가사이시게루

IPC: H05H1/46 ,  H01L21/3065

CPC classification number: H01J37/32165 ,  H01J37/32091 ,  H01J37/321 ,  H05H1/46

Abstract: 본 발명은 기판에 대해 플라즈마에 의해 처리를 실행하는 플라즈마 처리 장치에 있어서, 처리 용기와, 상기 처리 용기내에 마련되고 기판을 탑재하기 위한 탑재대와, 상기 탑재대에 대향하도록 마련되고 상기 처리용기내에 처리가스를 공급하기 위한 다수의 가스 토출 구멍이 그 하면에 형성된 도전성 부재로 이루어지는 가스 샤워헤드와, 상기 가스 샤워헤드의 아래쪽 공간을 둘러싸는 영역에 유도 결합형 플라즈마를 발생시키기 위해 고주파 전류가 공급되는 유도 코일과, 상기 가스 샤워헤드에 부의 직류전압을 인가해서 상기 유도 코일에 의해 유도되는 전계를 처리영역의 중앙부측에 인입하기 위한 부전압 공급수단과, 상기 처리용기내를 진공 배기하기 위한 수단을 구비한 것을 특징으로 하는 플라즈마 처리장치이다.

Abstract translation: 本发明涉及一种等离子体处理装置，用于通过等离子体至基板，该处理容器中执行处理，并适于在所述处理容器和安装台用于安装基片，面对在处理容器支架的安装，建立 和用于提供形成在其下部，包围低气体喷头的空间由导电构件的气体喷头的处理气体的多个气体排出孔是提供一个高频电流，以产生在区域中的感应耦合等离子体 感应线圈和一个负电压供给装置，以及用于通过施加到所述气体喷头的直流负电压由感应线圈在所述处理区的中央部侧诱导排空处理容器用于传入的电场内的真空的装置 等离子体处理装置。

公开(公告)号：KR1020100054826A

公开(公告)日：2010-05-25

申请号：KR1020107005342

申请日：2008-09-26

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 오타료사쿠 ,  아다치히카루 ,  나카니시도시오 ,  우에다아츠시 ,  강송윤 ,  모로즈파울 ,  벤트젝피터

IPC: H05H1/46 ,  H01L21/31

CPC classification number: H05H1/46 ,  H01J37/32192 ,  H01J37/3222 ,  H01J37/32229

Abstract: A microwave plasma processing device (100) of the slot antenna type includes a planar antenna plate (31) constituting a flat waveguide and a cover (34) formed by a conductive member. The cover (34) has a stub (43) as a second waveguide for adjusting field distribution in the flat waveguide. The stub (43) is arranged at a position superposed by slots (32) constituting a slot pair arranged at the outermost circumference of the planar antenna plate (31) when viewed from above. By appropriately arranging the stubs (43), it is possible to control the field distribution in the flat waveguide and generate a uniform plasma.

Abstract translation: 缝隙天线型微波等离子体处理装置（100）包括构成平坦波导的平面天线板（31）和由导电部件形成的盖（34）。 盖（34）具有作为用于调整平面波导中的场分布的第二波导的短截线（43）。 当从上方观察时，短截线体（43）被布置在叠置有构成设置在平面天线板（31）的最外周的槽对的槽（32）的位置。 通过适当地布置短截线（43），可以控制平坦波导中的场分布并产生均匀的等离子体。

公开(公告)号：KR1020090091332A

公开(公告)日：2009-08-27

申请号：KR1020097014829

申请日：2007-12-27

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 사와다이쿠오 ,  벤체크피타 ,  오시타다츠로 ,  마츠자키가즈요시 ,  강송윤

IPC: H05H1/46 ,  H01L21/3065 ,  H01L21/205

CPC classification number: H01J37/32568 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32522 ,  H01J37/32541

Abstract: Disclosed is a plasma processing apparatus wherein good temperature controllability is obtained in the side wall of the processing vessel and damage to the substrate by plasma is suppressed. Specifically disclosed is a plasma processing apparatus (1) comprising a first electrode (31) and a second electrode (32) so arranged in the upper portion of a processing vessel (11) as to face a stage (2), a gas supplying unit (4) for supplying a process gas between the first electrode (31) and the second electrode (32), a high-frequency power supply unit (33) for applying a high-frequency power between the first electrode (31) and the second electrode (32) for changing the process gas supplied between the electrodes (31, 32) into a plasma, and an evacuation system (14) for vacuum evacuating the atmosphere within the processing vessel (11) from the lower portion of the processing vessel (11). Since the electron temperature in the plasma is low near a substrate B on the stage (2), damage to the substrate B caused by the plasma can be suppressed. In addition, since a metal can be used as a material for the processing vessel (11), the processing vessel (11) can have good temperature controllability. ® KIPO & WIPO 2009

Abstract translation: 公开了一种等离子体处理装置，其在处理容器的侧壁中获得良好的温度可控性，并且抑制了通过等离子体对基板的损坏。 具体公开了一种等离子体处理装置（1），其包括第一电极（31）和第二电极（32），所述第一电极（31）和第二电极（32）被布置在处理容器（11）的上部以面向台（2），气体供应单元 （4），用于在第一电极（31）和第二电极（32）之间提供处理气体;高频电源单元（33），用于在第一电极（31）和第二电极 电极（32），用于将在电极（31,32）之间供给的工艺气体改变为等离子体;以及抽真空系统（14），用于从处理容器的下部真空排空处理容器（11）内的气氛 11）。 由于在载物台（2）上的基板B附近的等离子体中的电子温度低，所以能够抑制由等离子体引起的对基板B的损伤。 此外，由于金属可以用作处理容器（11）的材料，处理容器（11）可以具有良好的温度可控性。 ®KIPO＆WIPO 2009

公开(公告)号：KR1020090033922A

公开(公告)日：2009-04-06

申请号：KR1020097004983

申请日：2005-10-04

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 고바야시야스오 ,  오타도모히로 ,  강송윤 ,  사와다이쿠오

IPC: H01L21/205 ,  H01L21/3065 ,  C23C16/26

CPC classification number: C23C16/26 ,  C23C16/45565 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/32229 ,  H01L21/0212 ,  H01L21/02274 ,  H01L21/3127

Abstract: Plasma is produced on a substrate (W) placed in an airtight processing container (1) by introducing a microwave to a radial line slot antenna (4). Such conditions are set that a pressure in the processing container is 7.32Pa through 8.65Pa, a microwave power is 2000W through 2300W, the distance (L1) between the substrate surface and the opposite surface of a material gas supply member (3) is 70mm through 105mm, and the distance (L2) between the substrate surface and a discharge gas supply member (2) is 100mm through 140mm. Under these conditions, a material gas consisting of cyclic C5F8 gas is activated based on the energy of the microwave. Hence, a film forming seed containing large numbers of C4F6 ions and radicals are obtained. Accordingly, a fluorine-added carbon film excellent in leak characteristics and thermal stability is formed.

Abstract translation: 通过向径向线槽天线（4）引入微波，在放置在气密处理容器（1）的基板（W）上产生等离子体。 这样的条件被设定为处理容器的压力为7.32Pa至8.65Pa，微波功率为2000W至2300W，衬底表面与材料气体供应构件（3）的相对表面之间的距离（L1）为70mm 通过105mm，衬底表面和放电气体供应构件（2）之间的距离（L2）为100mm至140mm。 在这些条件下，基于微波的能量激活由循环C5F8气体组成的原料气体。 因此，获得含有大量C 4 F 6离子和自由基的成膜种子。 因此，形成了泄漏特性和热稳定性优异的氟加成膜。

公开(公告)号：KR100598197B1

公开(公告)日：2006-07-07

申请号：KR1020040020177

申请日：2004-03-25

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 미츠오카가즈유키 ,  혼다미노루 ,  강송윤 ,  사이토유스케

IPC: H01L21/26

CPC classification number: H01L21/31058 ,  Y10S430/143

Abstract: 종래의 큐어(cure) 방법의 경우에는, 전자 빔에 의해 유기재료막의 표면 층부를 경화시켜 기계적 강도를 개선할 수 있지만, 유기재료막의 k값이 악화되거나, 유기재료를 구성하는 메틸기를 분해하여 웨트 세정시의 내약품성이 저하된다.
본 발명의 전자 빔 처리 방법은, 전자 빔을 이용하여 웨이퍼의 표면에 형성된 도포형 절연막(SOD막 : Spin-On Dielectric film)을 처리하는 방법에 있어서, 메탄 가스를 거쳐서 SOD막에 전자 빔을 조사한다.