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公开(公告)号：KR101138793B1
公开(公告)日：2012-04-26
申请号：KR1020080126166
申请日：2008-12-11
Applicant: 제일모직주식회사
IPC: C09J133/08
Abstract: 본 발명은 광경화성 점착 조성물 및 이를 포함하는 다이싱 다이본딩 필름에 관한 것으로, 자외선 경화 후 충분한 점착력의 감소를 위하여, 비닐기를 포함하는 아크릴계 점착 바인더 100 중량부 대비, 하이드록실기 및 비닐기를 포함하는 UV 경화형 아크릴레이트 3 내지 50 중량부, 열경화제 0.5 내지 5 중량부 및 광중합 개시제 0.1 내지 3 중량부를 포함하는 광경화성 점착 조성물을 이용하여 다이싱 필름 또는 다이싱 다이본딩 필름을 형성함으로써, 픽업 특성을 향상시킬 수 있도록 하는 발명에 관한 것이다.
반도체, 점착 테이프, 광경화성 점착 조성물, 하이드록실기, 비닐기, 에폭시기, 아크릴레이트, 열경화제, 광개시제, 다이싱, 다이싱 다이본딩-
公开(公告)号：KR100996349B1
公开(公告)日：2010-11-23
申请号：KR1020070078527
申请日：2007-08-06
Applicant: 제일모직주식회사
IPC: C09J163/00 , C09J183/04 , C09J7/02 , C09J7/00
Abstract: 본 발명은 페녹시수지; 수산기, 에폭시기를 함유하는 엘라스토머 수지; 에폭시계 수지; 페놀형 에폭시 수지 경화제 또는 방향족 아민계 경화제; 잠재성 촉매형 경화제 및 경화촉매로 이루어진 군으로부터 선택된 1종 이상의 물질; 실란 커플링제;및 충진제를 포함하는 것을 특징으로 하는 반도체 조립용 접착 필름 조성물에 관한 것으로서, 본 발명의 반도체 조립용 접착 필름 조성물은 페녹시 수지를 함유함으로써 웨이퍼와 웨이퍼 혹은 PCB와의 부착력이 우수하고, 인장 모듈러스 향상으로 점착층과의 픽업성을 유리하게 하고, 열가소성 성질로 인하여 다이 어태치 공정시 발생하는 기포를 최소화할 뿐만 아니라 PCB 기판과 같은 거친 표면을 메우는 효과가 우수하기 때문에높은 신뢰성을 확보할 수 있는 반도체 조립용 접착 필름을 제공할 수 있다.
반도체 조립용 접착 필름, 에폭시기 함유형 엘라스토머 수지, 에폭시계 수지, 페놀계 혹은 아민형 경화제, 이미다졸계 경화촉매, 실란 커플링제.-
公开(公告)号：KR1020100067915A
公开(公告)日：2010-06-22
申请号：KR1020080126514
申请日：2008-12-12
Applicant: 제일모직주식회사
IPC: C09J179/06 , C09J123/06 , C09J175/04 , C09J163/00
CPC classification number: C09J163/00 , C08L63/00 , C09J9/00 , C09J11/00 , C09J11/08
Abstract: PURPOSE: A semiconductor adhesive composition for stealth dicing is provided to facilitate low temperature individualization due to the increase of low temperature elastic modulus using two kinds of polymer reins having different glass transition temperatures. CONSTITUTION: A semiconductor adhesive composition for stealth dicing comprises; epoxy-based resin 5-20 parts by weight; phenol type epoxy hardener 5-20 parts by weight; inorganic filler 20-80 parts by weight; curing catalyst 0.1-20 parts by weight; and coupling agent 0.1-10 parts by weight based on a polymer containing a first polymer resin 50~70 weight% and a second polymer resin 30~50 weight%. The first polymer resin has a glass transition temperature of 0~10 °C and the second polymer resin has a glass transition temperature of 30~60 °C.
Abstract translation: 目的：提供一种用于隐形切割的半导体粘合剂组合物，以便利用具有不同玻璃化转变温度的两种聚合物筘，由于低温弹性模量的增加而促进了低温个体化。 构成：用于隐形切割的半导体粘合剂组合物包括： 环氧树脂5-20重量份; 苯酚型环氧硬化剂5-20重量份; 无机填料20-80重量份; 固化催化剂0.1-20重量份; 和偶联剂0.1-10重量份，基于含有50〜70重量％的第一聚合物树脂的聚合物和30〜50重量％的第二聚合物树脂。 第一聚合物树脂的玻璃化转变温度为0〜10℃，第二聚合物树脂的玻璃化转变温度为30〜60℃。
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公开(公告)号：KR1020090057697A
公开(公告)日：2009-06-08
申请号：KR1020070124393
申请日：2007-12-03
Applicant: 제일모직주식회사
IPC: C09J163/00 , C09J183/04 , C09J7/02 , C09J7/00
CPC classification number: C09J7/00 , C09J163/00 , C09J183/04 , C09J2203/326
Abstract: A bonding film composition for a semiconductor assembly is provided to prevent separation or curling of an adhesive film caused by frictional heat generating in a dicing process of a semiconductor. A bonding film composition for a semiconductor assembly comprises, based on whole solid 100.0 parts by weight of the composition, an elastomer resin -60 parts by weight containing a hydroxyl group, carboxyl group or epoxy group; a film-forming resin 5-60 parts by weight; an epoxy resin 5-40 parts by weight; a phenol type epoxy hardener 10-30 parts by weight; a curing catalyst 0.01-10 parts by weight; a silane coupling agent 0.01-10 parts by weight; filler 3-60 parts by weight; and thermal stabilizer 0.01-5 parts by weight.
Abstract translation: 提供了一种用于半导体组件的接合膜组合物，用于防止在半导体的切割工艺中由摩擦发热引起的粘合膜的分离或卷曲。 用于半导体组合物的粘合膜组合物包含基于100.0重量份组合物的全固体，含有羟基，羧基或环氧基的-60重量份弹性体树脂; 5-60重量份的成膜树脂; 环氧树脂5-40重量份; 酚类环氧固化剂10-30重量份; 固化催化剂0.01-10重量份; 硅烷偶联剂0.01-10重量份; 填料3-60重量份; 和热稳定剂0.01-5重量份。
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公开(公告)号：KR1020080060608A
公开(公告)日：2008-07-02
申请号：KR1020060134920
申请日：2006-12-27
Applicant: 제일모직주식회사
IPC: C09J133/08 , C09J133/10 , C09J183/00 , C09J7/02
CPC classification number: C09J7/00 , C09J133/08 , C09J167/00 , C09J183/00 , C09J2203/326
Abstract: A radical curable adhesive film composition for semiconductor packaging is provided to reduce the time required for fabricating semiconductors by a cure skip process using radical polymerization. A radical curable adhesive film composition for semiconductor packaging comprises: a radical polymerizable elastomer resin; an adhesion enhancing crystalline polyester-based film-forming resin; a radical polymerizable resin; a radical polymerizable thermal initiator; a silane coupling agent; a filler; additives; and an organic solvent. The radical polymerizable elastomer resin is formed by bonding a (meth)acrylate monomer to an elastomer having a hydroxyl, carboxyl or epoxy group.
Abstract translation: 提供了用于半导体封装的自由基固化粘合剂膜组合物，以通过使用自由基聚合的固化跳过工艺来减少半导体制造所需的时间。 一种用于半导体封装的可自由基固化的粘合膜组合物，包括：可自由基聚合的弹性体树脂; 粘合增强结晶聚酯基成膜树脂; 可自由基聚合的树脂; 可自由基聚合的热引发剂; 硅烷偶联剂; 填料; 添加剂; 和有机溶剂。 可自由基聚合的弹性体树脂通过将（甲基）丙烯酸酯单体粘合到具有羟基，羧基或环氧基的弹性体而形成。
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Patent Agency Ranking
公开(公告)号：KR100826420B1
公开(公告)日：2008-04-29
申请号：KR1020060138652
申请日：2006-12-29
Applicant: 제일모직주식회사
CPC classification number: H01L24/26 , H01L21/67092 , H01L21/78
Abstract: An adhesive film composition for assembling a semiconductor, an adhesive film for assembling a semiconductor formed from the composition, and a semiconductor wafer dicing die bonding film containing the adhesive film are provided to improve the adhesive strength of an inorganic material and to enhance heat resistance and humid resistance. An adhesive film composition for assembling a semiconductor comprises 10-85 wt% of the rubber containing at least one double bond at a main chain; 5-80 wt% of a phenolic resin; 0.1-10 wt% of a curing agent; 5-50 wt% of distilled water; 5-50 wt% of a filler which has a size of 5 nm to 4 micrometers; and 4.9-20 wt% of an organic solvent. Preferably the filler is a spherical or amorphous inorganic filler.
Abstract translation: 提供一种用于组装半导体的粘合膜组合物，用于组合由该组合物形成的半导体的粘合膜以及含有该粘合剂膜的半导体晶片切割芯片接合膜，以提高无机材料的粘合强度并提高耐热性， 耐湿性。 用于组装半导体的粘合膜组合物包含10-85重量％的在主链上含有至少一个双键的橡胶; 5-80重量％的酚醛树脂; 0.1-10重量％的固化剂; 5-50％重量的蒸馏水; 5-50重量％的尺寸为5nm至4微米的填料; 和4.9-20重量％的有机溶剂。 优选地，填料是球形或无定形无机填料。
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公开(公告)号：KR1020120068695A
公开(公告)日：2012-06-27
申请号：KR1020110120484
申请日：2011-11-17
Applicant: 제일모직주식회사
IPC: C09J133/04 , C09J163/00 , C09J11/06 , H01L21/58
CPC classification number: H01L24/29 , C08L63/00 , C09J133/066 , C09J133/18 , H01L24/13 , H01L24/16 , H01L24/32 , H01L24/81 , H01L24/83 , H01L24/92 , H01L25/0657 , H01L25/50 , H01L2224/13111 , H01L2224/13147 , H01L2224/16146 , H01L2224/29101 , H01L2224/2919 , H01L2224/2929 , H01L2224/293 , H01L2224/29386 , H01L2224/32145 , H01L2224/73104 , H01L2224/81011 , H01L2224/81191 , H01L2224/81193 , H01L2224/81203 , H01L2224/81447 , H01L2224/8181 , H01L2224/81815 , H01L2224/83191 , H01L2224/83203 , H01L2224/8385 , H01L2224/9211 , H01L2225/06513 , H01L2225/06541 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/0102 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01079 , H01L2924/01327 , H01L2924/014 , H01L2924/0665 , H01L2924/00014 , H01L2224/81 , H01L2224/83 , H01L2924/00
Abstract: PURPOSE: An adhesive composition for semiconductor is provided to satisfy electric connection reliability between bump chips, to conduct flux process removing an oxide layer of a Cu bump and a solder by adhesive layer between bump chips, and to sufficiently connect a bump and a solder at chip bonding due to heating and compression. CONSTITUTION: An adhesive composition comprises an acryl-based polymer resin, epoxy-based resin, and imidazole compound. The imidazole compound has melting point of 200-270 °C. The composition has melting viscosity of 2 ×10^4 - 15 ×10^4 poise at 150 °C. The equivalent of the epoxy-based resin is about 200-250 g/eq, and the melting viscosity at 150 °C is about 0.01-0.2 Pa·s. the adhesion of the composition is about 15 - 30 kgf/25mm^2. The acrylic polymer resin contains an epoxy group, and the glass transition temperature is about (-30) - 80°C.
Abstract translation: 目的：提供一种用于半导体的粘合剂组合物，以满足凸块之间的电连接可靠性，通过在凸块之间的粘合剂层去除Cu凸块的氧化物层和焊料的通量处理，并充分地连接凸块和焊料 由于加热和压缩而导致的芯片接合。 构成：粘合剂组合物包含丙烯酸类聚合物树脂，环氧类树脂和咪唑化合物。 咪唑化合物的熔点为200-270℃。 该组合物在150℃下的熔融粘度为2×10 ^ 4 -15×10 ^ 4泊。 环氧基树脂的当量为约200-250g / eq，150℃下的熔融粘度为约0.01-0.2Pa·s。 组合物的粘合力为约15-30kgf / 25mm ^ 2。 丙烯酸类聚合物树脂含有环氧基，玻璃化转变温度约为（-30）〜80℃。
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公开(公告)号：KR1020120067197A
公开(公告)日：2012-06-25
申请号：KR1020100128660
申请日：2010-12-15
Applicant: 제일모직주식회사
IPC: H01L21/301
CPC classification number: H01L24/27 , H01L21/6836 , H01L24/29 , H01L24/83 , H01L2224/83191 , H01L2924/01012 , H01L2924/01029 , H01L2924/3512 , H01L2924/00
Abstract: PURPOSE: A dicing die-bonding film is provided to differently produce peeling force of a surface contacting with a base film and a surface contacting with a wafer by adding specific metal oxide filler. CONSTITUTION: A dicing die-bonding film(10) has a first side(A) contacting to a base film and a second side(B) contacting to a semiconductor wafer. The dicing die-bonding film is formed into monolayer. Peel force of the first side is under 0.1 N/25mm. The peel force of the second side is over 0.2 N/25mm. A light hardening degree of the first side is 90% to 99%. A light hardening degree of the second side is 10% to 50%. The ratio of the first side and the second side is 1:5-30. The dicing die-bonding film includes a metal oxide particle selected by titanium dioxide, zinc oxide, or mixture thereof.
Abstract translation: 目的：通过添加特定的金属氧化物填料，提供切割芯片接合薄膜以不同地产生与基底膜接触的表面和与晶片接触的表面的剥离力。 构成：切割芯片接合膜（10）具有与基膜接触的第一侧（A）和与半导体晶片接触的第二侧（B）。 切割芯片接合膜形成为单层。 第一面的剥离力在0.1N / 25mm以下。 第二面的剥离力超过0.2N / 25mm。 第一侧的光硬化度为90％〜99％。 第二面的光硬化度为10％〜50％。 第一面和第二面的比例为1:5-30。 切割芯片接合膜包括由二氧化钛，氧化锌或其混合物选择的金属氧化物颗粒。
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公开(公告)号：KR101045262B1
公开(公告)日：2011-06-29
申请号：KR1020090128327
申请日：2009-12-21
Applicant: 제일모직주식회사
IPC: C09J163/00 , C09J7/02 , H01L21/58
CPC classification number: C09J163/00 , C08G59/621 , C08L63/00 , C08L2205/02 , Y10T428/31511 , C09J7/22 , C09J7/35 , C09J2203/326
Abstract: PURPOSE: A semiconductor adhesive composition for stealth dicing is provided to facilitate low temperature individualization and cuttability by the increase of low temperature elastic modulus, and to secure substrate embedding property and adhesion reliability. CONSTITUTION: A semiconductor adhesive composition for stealth dicing comprises (a) 100 parts by weight of a polymer resin having a glass transition temperature of 5 °C or more and less than 30°C, (b) 1-20 parts by weight of an epoxy-based resin including a liquid-phase epoxy resin and a solid-phase epoxy resin, (c) 1-20 parts by weight of phenol type epoxy resin hardener, (d) 10-80 parts by weight of inorganic filler, (e) 0.1-20 parts by weight of curing catalyst, and (f) 0.1-10 parts by weight of silane coupling agents.
Abstract translation: 目的：提供一种用于隐形切割的半导体粘合剂组合物，以通过降低低温弹性模量来提高低温个体化和切割性，并确保基材的嵌入性和粘合可靠性。 构成：用于隐形切割的半导体粘合剂组合物包括（a）100重量份玻璃化转变温度为5℃以上且小于30℃的聚合物树脂，（b）1-20重量份的 包括液相环氧树脂和固相环氧树脂的环氧树脂，（c）1-20重量份酚型环氧树脂固化剂，（d）10-80重量份无机填料，（e ）0.1-20重量份的固化催化剂，和（f）0.1-10重量份的硅烷偶联剂。
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公开(公告)号：KR101023240B1
公开(公告)日：2011-03-21
申请号：KR1020080126514
申请日：2008-12-12
Applicant: 제일모직주식회사
IPC: C09J179/06 , C09J123/06 , C09J175/04 , C09J163/00
Abstract: 본 발명은 스텔스 다이싱용 반도체용 접착 조성물에 관한 것으로, 보다 상세하게는 유리전이온도가 0~10℃인 제1 고분자 수지와 유리전이온도가 30~60℃인 제2 고분자 수지를 함유하는 고분자 성분, 에폭시계 수지, 페놀형 에폭시 수지 경화제, 무기 필러, 경화촉매 및 커플링제를 포함하는 접착 조성물에 관한 것이다. 본 발명에 따른 반도체용 접착 조성물은 유리전이온도가 서로 다른 2종의 고분자 수지를 사용하여 저온 탄성률의 증가로 저온 개별화 및 절단성이 용이하고 또한 경화 후 고온 탄성률의 저하로 기판 매입성 및 접착 신뢰성을 확보할 수 있다.
접착 조성물, 스텔스 다이싱, 유리전이온도
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