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公开(公告)号：KR1020040090658A
公开(公告)日：2004-10-26
申请号：KR1020030024630
申请日：2003-04-18
Applicant: 한국화학연구원
IPC: C07D307/88
Abstract: PURPOSE: A method for preparation of phthalide from phthalic anhydride is provided, thereby preparing phthalide under mild condition, and stably preparing phthalide from phthalic anhydride for a long term. CONSTITUTION: The method for preparation of phthalide from phthalic anhydride comprises hydrogenation of phthalic anhydride in the presence of catalyst of formula (1) of CuO(a)MnO2(b)M(c)SiO2(d) at 180 to 300 deg. C and 1 to 40 atmospheres, wherein a is 40 to 90%, b is 0.15 to 5%, c is 0.001 to 10% and d is 5 to 15%; M is one or more of metal oxides selected from Zn, Pt, Pd, Re, Ru and Rh; and the hydrogen reaction is carried out at 0.05 to 4.0 WHSV(weight hourly space velocity) of phthalic anhydride supplying rate, and a mole ratio of hydrogen and phthalic anhydride of 40-600:1.
Abstract translation: 目的：提供从邻苯二甲酸酐制备苯酞的方法，从而在温和条件下制备苯酞，长期稳定地从邻苯二甲酸酐制备苯酞。 构成：从邻苯二甲酸酐制备苯酞的方法包括在180至300℃下在CuO（a）MnO 2（b）M（c）SiO 2（d）的式（1）催化剂存在下氢化邻苯二甲酸酐。 C为1〜40个大气压，a为40〜90％，b为0.15〜5％，c为0.001〜10％，d为5〜15％。 M是选自Zn，Pt，Pd，Re，Ru和Rh中的一种或多种金属氧化物; 氢反应以邻苯二甲酸酐供给速度的0.05〜4.0WHSV（重时空速）和氢与邻苯二甲酸酐的摩尔比为40〜600:1进行。
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公开(公告)号：KR1020040067435A
公开(公告)日：2004-07-30
申请号：KR1020030004534
申请日：2003-01-23
Applicant: 한국화학연구원
IPC: C08F4/06
CPC classification number: C08F110/02 , C08F10/00 , C08F2500/23 , Y10S585/946
Abstract: PURPOSE: Provided is a catalyst system, with which polyolefin wax having increased wax content and excellent physical properties can be prepared under mild reaction conditions. CONSTITUTION: The catalyst system for preparing polyolefin wax comprises a main catalyst containing a transition metal component, a calixarene ligand and a halogen component, and a co-catalyst containing an organoaluminum compound. In the main catalyst, the transition metal component is selected from the group consisting of chrome, titanium, vanadium and zirconium. The calixarene ligand is one selected from the group consisting of para-butylcalix£4|arene, parabutylcalix£5|arene, parabutylcalix£6|arene, parabutylcalix£8| arene and derivatives thereof, or a combination thereof. Additionally, the halogen component is chlorine or bromine.
Abstract translation: 目的：提供了一种催化剂体系，可以在温和的反应条件下制备蜡含量增加和物理性能优异的聚烯烃蜡。 构成：用于制备聚烯烃蜡的催化剂体系包括含有过渡金属组分，杯芳烃配体和卤素组分的主催化剂和含有有机铝化合物的助催化剂。 在主催化剂中，过渡金属组分选自铬，钛，钒和锆。 杯芳烃配体是选自对 - 丁基水ix ix ne ne ne ne ix ix ne ne ne ne ix£££££££| | | | | | | 芳烃及其衍生物，或其组合。 另外，卤素组分是氯或溴。
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23.发明公开에르븀과 이터비움 이온이 주입된이트리움칼슘옥시보레이트 화합물 및 결정 성장방법,그리고 이러한 결정을 사용하여 제조된 광기능 소자 失效铬和铝离子镀铝白云母氧化物化合物，其晶体生长方法和使用晶体制备的光学器件
公开(公告)号：KR1020010046624A
公开(公告)日：2001-06-15
申请号：KR1019990050460
申请日：1999-11-13
Applicant: 한국화학연구원
IPC: C30B29/00
CPC classification number: C01F17/0012 , C30B15/203 , C30B29/10
Abstract: PURPOSE: A crystalline solid material, a method for growing its crystal, an optical device prepared by using the crystal, and a method for preparing the optical device are provided, which solid material is erbium and ytterbium ions-doped ytterbium calcium oxyborate. CONSTITUTION: The crystalline solid material is represented by the formula: (Er(x)Yb(y)Y(1-x-y))Ca(4+z)B3O(10+z), wherein x is 0.005-0.10, y is 0.005-0.30 and z is 0.00-0.5. The crystal of the solid material is grown with the temperature gradient of 5-300 deg.C/cm by Czochralski method with the increasing velocity of 0.1-10mm/hr and the rotation velocity of 0-70 rpm. A YCa4O(BO3)3 crystal is used as a crystal seed. The solid material crystal is single crystal or thin film crystal. The optical device is a 1.5-1.6 micrometers laser generating device, a nonlinear optical device, a self frequency doubling device or a range finding device.
Abstract translation: 目的：提供一种结晶固体材料，其晶体生长方法，使用晶体制备的光学器件，以及制备该光学器件的方法，该固体材料是铒和镱离子掺杂的硼酸镱钙矾土。 结构：结晶固体材料由下式表示：（Er（x）Yb（y）Y（1-xy））Ca（4 + z）B3O（10 + z），其中x为0.005-0.10，y为 0.005-0.30，z为0.00-0.5。 固体材料的晶体通过Czochralski法以5-300摄氏度/厘米的温度梯度生长，其速度为0.1-10毫米/小时，旋转速度为0-70转/分钟。 使用YCa4O（BO3）3晶体作为晶种。 固体材料晶体是单晶或薄膜晶体。 光学装置是1.5-1.6微米的激光产生装置，非线性光学装置，自倍频装置或测距装置。
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公开(公告)号：KR100158264B1
公开(公告)日：1998-11-16
申请号：KR1019950031860
申请日：1995-09-26
Applicant: 한국화학연구원
IPC: C30B7/10
Abstract: [목적] 본원 발명은 균열이 발생하지 않고 종자결정과 성장영역 계면에 불균질한 성장충의 발생의 억제 및 불순물을 저하시키는 자수정의 제조방법을 제공하는 것을 목적으로 한다.
[구성] 분쇄한 천연수정과 천연철광석을 용기에 넣은 것을 오토크레이브하단부(원료 용액부)에 장착하고 그 위에 개공된 대류조절관을 얹은 후 +X축 방향을 30° 절단한(0111)방향의 판상 종자결정을 상단부(결정육성부)에 장착하고 탄산칼슘 수용액에 질산리튬을 첨가하여 조제한 액을 오토클레이브에 채운 후 이를 밀봉하고, 전기 상단부 및 하단부를 고온으로 가열한 상태에서 수열에칭 및 결정을 육성하여 자수정을 얻는다.-
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Patent Agency Ranking
公开(公告)号：KR101530043B1
公开(公告)日：2015-06-18
申请号：KR1020130046345
申请日：2013-04-25
Applicant: 한국화학연구원
Abstract: 본발명은하기화학식 1로표시되는인듐전구체에관한것으로, 상기인듐전구체는황을포함하고있는전구체로서박막제조중에별도의황을첨가시키지않아도되는장점이있고열적안정성과휘발성이향상되어양질의황화인듐박막을형성할수 있다.[화학식 1](상기식에서, R, R는각각독립적으로 C1-C10의선형또는분지형알킬기이고, R, R는각각독립적으로 C1-C10의선형또는분지형의알킬기또는 C1-C10의선형또는분지형의플루오르화알킬기이며, n은 1 내지 3 범위의정수에서선택된다.)
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公开(公告)号：KR1020140127680A
公开(公告)日：2014-11-04
申请号：KR1020130046344
申请日：2013-04-25
Applicant: 한국화학연구원
CPC classification number: C07F5/003 , C23C16/305
Abstract: 본발명은하기화학식 1로표시되는인듐전구체에관한것으로, 상기인듐전구체는황을포함하고있는전구체로서박막제조중에별도의황을첨가시키지않아도되는장점이있고열적안정성이향상되어양질의황을포함하는인듐박막을형성할수 있다.[화학식 1](상기식에서, R, R는각각독립적으로 C1-C10의선형또는분지형알킬기이고, R, R는각각독립적으로 C1-C10의선형또는분지형의알킬기또는 C1-C10의선형또는분지형의플루오르화알킬기이며, Y는 SeCN 또는 SCN이고, n은 1 내지 3 범위의정수에서선택된다.)
Abstract translation: 本发明涉及由化学式1表示的铟前体。铟前体含有硫，在薄膜制造期间不需要添加额外的硫作为前体，并且能够通过改进的热量形成含有高质量硫的铟薄膜 稳定性。 在化学式1中，R 1和R 2分别是C 1 -C 10的直链或支链烷基。 R_3和R_4是C1-C10的直链或支链烷基或C1-C10的直链或支链氟化烷基。 Y是SeCN或SCN。 n为1-3的整数。
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公开(公告)号：KR1020140068720A
公开(公告)日：2014-06-09
申请号：KR1020120136560
申请日：2012-11-28
Applicant: 한국화학연구원
Abstract: The present invention relates to a germanium precursor represented by Chemical Formula 1. If the germanium precursor is a precursor which has improved thermal stability and includes chalcogen, the germanium precursor is advantageous because separated chalcogen does not have to be added during the production of a thin film so that a germanium thin film including good quality chalcogen can be produced. [Chemical Formula 1] (In Formula, A is O or S; E is S, Se, or Te; R1 and R2 are independently C1-C10 linear or branched alkyl groups; R3 and R4 are independently C1-C10 linear or branched alkyl or fluoroalkyl groups; and n is selected from the numbers between 1 and 3.).
Abstract translation: 本发明涉及由化学式1表示的锗前体。如果锗前体是具有改善的热稳定性并包括硫族元素的前体，锗前体是有利的，因为在制备薄的时候不必加入分离的硫族元素 使得可以生产包括优质硫属元素的锗薄膜。 [化学式1]（式中，A为O或S; E为S，Se或Te; R 1和R 2独立地为C 1 -C 10直链或支链烷基; R 3和R 4独立地为C 1 -C 10直链或支链烷基 或氟代烷基; n选自1和3之间的数字）。
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公开(公告)号：KR1020140068718A
公开(公告)日：2014-06-09
申请号：KR1020120136556
申请日：2012-11-28
Applicant: 한국화학연구원
CPC classification number: C07F7/30 , C23C16/305
Abstract: The present invention relates to a germanium precursor represented by Chemical Formula 1. The germanium precursor is a precursor including sulfur. The germanium precursor is advantageous because separated sulfur does not have to be added during the production of a thin film and has improved thermal stability and volatility so that a good quality germanium sulfide thin film can be produced. [Chemical Formula 1] (In Formula, R1 and R2 are independently C1-C10 linear or branched alkyl groups; R3 and R4 are independently C1-C10 linear or branched alkyl or fluoroalkyl groups; and n is selected from the numbers between 1 and 3.).
Abstract translation: 本发明涉及由化学式1表示的锗前体。锗前体是包含硫的前体。 锗前体是有利的，因为在制备薄膜期间不必加入分离的硫，并且具有改善的热稳定性和挥发性，从而可以生产出优质的硫化锗薄膜。 [化学式1]（式中，R 1和R 2独立地为C 1 -C 10直链或支链烷基; R 3和R 4独立地为C 1 -C 10直链或支链烷基或氟代烷基; n选自1至3 ）。
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公开(公告)号：KR101403482B1
公开(公告)日：2014-06-05
申请号：KR1020120048238
申请日：2012-05-07
Applicant: 한국화학연구원
CPC classification number: C07D487/22 , H01L51/0091 , H01L51/0545
Abstract: 본 발명은 벤조포르피린 유도체의 신규한 제조방법과 이를 이용한 유기박막트랜지스터 제조에 관한 것으로, 본 발명에 따른 벤조포르피린 유도체의 신규한 제조방법은 종래에 알려진 벤조포르피린 유도체의 제조방법에 비해 제조공정 단계를 현저히 줄임으로써 목적 화합물인 벤조포르피린 유도체를 경제적으로 얻을 수 있다. 또한 벤조포르피린 전구체를 끓는점이 다른 2종 이상의 혼합 유기용매에 용해시켜 인쇄법으로 유기박막트랜지스터를 제조함으로써 공정을 간단하게 하며, 인쇄법 도입으로 인한 설비 및 제조 공정비용을 절감할 수 있다.
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