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公开(公告)号：WO2019081095A1
公开(公告)日：2019-05-02
申请号：PCT/EP2018/073095
申请日：2018-08-28
Applicant: ASML NETHERLANDS B.V.
Inventor： DUYS, Anton, Wilhelmus , NASALEVICH, Maxim, Aleksandrovich , NOTENBOOM, Arnoud, Willem , PÉTER, Mária , VAN ZWOL, Pieter-Jan , VLES, David, Ferdinand
Abstract: A pellicle frame (17) for supporting a pellicle, the frame (17) comprising a first surface (17B) and a second surface (17A) opposite the first surface (17A), and structure (18) provided between the first and the second surfaces (17A, 17B); wherein the first and second surfaces (17A, 17B) and the structure (18) at least partially define at least one volume (28) therebetween that is devoid of the material that forms the frame (17).
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公开(公告)号：WO2018233951A1
公开(公告)日：2018-12-27
申请号：PCT/EP2018/062980
申请日：2018-05-17
Applicant: ASML NETHERLANDS B.V.
Inventor： D'ACHARD VAN ENSCHUT, Johannes, Franciscus, Martinus , DRUZHININA, Tamara , KUMAR, Nitish , ROY, Sarathi , HUANG, Yang-Shan , NIENHUYS, Han-Kwang , DEN BOEF, Arie, Jeffrey , VAN ZWOL, Pieter-Jan , ROOBOL, Sander, Bas
Abstract: Disclosed is a method and associated inspection apparatus for detecting variations on a surface of a substrate. The method comprises providing patterned inspection radiation to a surface of a substrate. The inspection radiation is patterned such that an amplitude of a corresponding enhanced field is modulated in a manner corresponding to the patterned inspection radiation. The scattered radiation resultant from interaction between the enhanced field and the substrate surface is received and variations on the surface of the substrate are detected based on the interaction between the enhanced field and the substrate surface. Also disclosed is a method of detecting any changes to at least one characteristic of received radiation, the said changes being induced by the generation of a surface plasmon at said surface of the optical element.
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公开(公告)号：WO2017186486A1
公开(公告)日：2017-11-02
申请号：PCT/EP2017/058721
申请日：2017-04-12
Applicant: ASML NETHERLANDS B.V.
Inventor： NASALEVICH, Maxim, Aleksandrovich , ABEGG, Erik, Achilles , BANERJEE, Nirupam , BLAUW, Michiel, Alexander , BROUNS, Derk, Servatius, Gertruda , JANSSEN, Paul , KRUIZINGA, Matthias , LENDERINK, Egbert , MAXIM, Nicolae , NIKIPELOV, Andrey , NOTENBOOM, Arnoud, Willem , PILIEGO, Claudia , PÉTER, Mária , RISPENS, Gijsbert , SCHUH, Nadja , VAN DE KERKHOF, Marcus, Adrianus , VAN DER ZANDE, Willem, Joan , VAN ZWOL, Pieter-Jan , VERBURG, Antonius, Willem , VERMEULEN, Johannes, Petrus, Martinus, Bernardus , VLES, David, Ferdinand , VOORTHUIJZEN, Willem-Pieter , ZDRAVKOV, Alexandar, Nikolov
Abstract: Membranes for EUV lithography are disclosed. In one arrangement, a membrane comprises a stack having layers in the following order: a first capping layer comprising an oxide of a first metal; a base layer comprising a compound comprising a second metal and an additional element selected from the group consisting of Si, B, C and N; and a second capping layer comprising an oxide of a third metal, wherein the first metal is different from the second metal and the third metal is the same as or different from the first metal.
Abstract translation: 公开了用于EUV光刻的膜。 在一种布置中，膜包括具有以下顺序的层的堆叠体：包含第一金属的氧化物的第一封盖层; 基层，其包含含有第二金属和选自Si，B，C和N的附加元素的化合物; 以及包含第三金属的氧化物的第二覆盖层，其中第一金属不同于第二金属，第三金属与第一金属相同或不同。
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公开(公告)号：WO2017102379A1
公开(公告)日：2017-06-22
申请号：PCT/EP2016/079594
申请日：2016-12-02
Applicant: ASML NETHERLANDS B.V.
Inventor： VAN ZWOL, Pieter-Jan , DE GRAAF, Dennis , JANSSEN, Paul , PÉTER, Mária , VAN DE KERKHOF, Marcus, Adrianus , VAN DER ZANDE, Willem, Joan , VLES, David, Ferdinand , VOORTHUIJZEN, Willem-Pieter
CPC classification number: G03F1/24 , G03F1/62 , G03F7/70916 , G03F7/70983
Abstract: A membrane for EUV lithography, the membrane having a thickness of no more than 200 nm and comprising a stack comprising: at least one silicon layer; and at least one silicon compound layer made of a compound of silicon and an element selected from the group consisting of boron, phosphorous, bromine
Abstract translation: 一种用于EUV光刻的膜，所述膜具有不大于200nm的厚度并且包括叠层，所述叠层包括：至少一个硅层; 以及至少一个由硅化合物和选自由硼，磷，溴组成的组中的元素构成的硅化合物层，
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公开(公告)号：WO2017080817A1
公开(公告)日：2017-05-18
申请号：PCT/EP2016/075655
申请日：2016-10-25
Applicant: ASML NETHERLANDS B.V.
Inventor： SCHIMMEL, Hendrikus, Gijsbertus , HUIJBREGTSE, Jeroen, Marcel , VAN KAMPEN, Maarten , VAN ZWOL, Pieter-Jan
CPC classification number: G03F7/70925 , G03F7/70033 , G03F7/70883 , G03F7/70908 , G21K1/062
Abstract: A radiation system comprises a fuel emitter configured to provide fuel to a plasma formation region, a laser arranged to provide a laser beam at the plasma formation region incident on the fuel to generate a radiation emitting plasma, and a reflective or transmissive device (30) arranged to receive radiation emitted by the plasma and to reflect or transmit at least some of the received radiation along a desired path, wherein the reflective or transmissive device comprises a body configured to reflect and/or transmit said at least some of the radiation, and selected secondary electron emission (SEE) material (34) arranged relative to the body such as to emit secondary electrons in response to the received radiation, thereby to clean material from a surface of the device.
Abstract translation: 辐射系统包括配置成向等离子体形成区域提供燃料的燃料发射器，布置成在等离子体形成区域处提供入射在燃料上的激光束以产生辐射发射等离子体的激光器，以及 反射或透射装置（30），其布置成接收由等离子体发射的辐射并且沿期望路径反射或透射至少一些所接收的辐射，其中所述反射或透射装置包括被配置为反射和/或透射所述 至少一些辐射以及相对于主体布置的选择的二次电子发射（SEE）材料（34），以响应于所接收的辐射发射二次电子，由此清洁来自装置表面的材料。 p>
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Patent Agency Ranking26.发明申请
公开(公告)号：WO2017067813A2
公开(公告)日：2017-04-27
申请号：PCT/EP2016/074280
申请日：2016-10-11
Applicant: ASML NETHERLANDS B.V.
Inventor： PÉTER, Mária , ABEGG, Erik, Achilles , GIESBERS, Adrianus, Johannes, Maria , KLOOTWIJK, Johan, Hendrik , NASALEVICH, Maxim, Aleksandrovich , VAN DEN EINDEN, Wilhelmus, Theodorus, Anthonius, Johannes , VAN DER ZANDE, Willem, Joan , VAN ZWOL, Pieter-Jan , VERMEULEN, Johannes, Petrus, Martinus, Bernardus , VLES, David, Ferdinand , VOORTHUIJZEN, Willem-Pieter
IPC: G03F7/20
CPC classification number: G03F7/70958 , G03F1/62 , G03F7/70983 , G21K2201/067
Abstract: Methods of manufacturing a pellicle for a lithographic apparatus are disclosed. In one arrangement the method comprises depositing at least one graphene layer on a planar surface of a substrate. The substrate comprises a first substrate portion and a second substrate portion. The method further comprises removing the first substrate portion to form a freestanding membrane from the at least one graphene layer. The freestanding membrane is supported by the second substrate portion.
Abstract translation: 公开了制造用于光刻设备的防护薄膜组件的方法。 在一种布置中，该方法包括在衬底的平坦表面上沉积至少一个石墨烯层。 衬底包括第一衬底部分和第二衬底部分。 该方法还包括去除第一衬底部分以从至少一个石墨烯层形成独立式膜。 独立膜由第二基底部分支撑。
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27.发明申请MEMBRANES FOR USE WITHIN A LITHOGRAPHIC APPARATUS AND A LITHOGRAPHIC APPARATUS COMPRISING SUCH A MEMBRANE 审中-公开在地平面设备中使用的膜和包含这种膜的地平面设备
公开(公告)号：WO2016001351A1
公开(公告)日：2016-01-07
申请号：PCT/EP2015/065080
申请日：2015-07-02
Applicant: ASML NETHERLANDS B.V.
Inventor： NIKIPELOV, Andrey, Alexandrovich , BANINE, Vadim, Yevgenyevich , BENSCHOP, Jozef, Petrus, Henricus , BOOGAARD, Arjen , DHALLUIN, Florian, Didier, Albin , KUZNETSOV, Alexey, Sergeevich , PÉTER, Mária , SCACCABAROZZI, Luigi , VAN DER ZANDE, Willem, Joan , VAN ZWOL, Pieter-Jan , YAKUNIN, Andrei, Mikhailovich
CPC classification number: G03F1/62 , G02B5/1838 , G02B5/208 , G03F1/24 , G03F1/38 , G03F7/70191 , G03F7/70316 , G03F7/70575 , G03F7/70891 , G03F7/70916 , G03F7/70958 , G03F7/70983
Abstract: Disclosed is a membrane transmissive to EUV radiation, which may be used as a pellicle or spectral filter in a lithographic apparatus. The membrane comprises one or more high doped regions wherein said membrane is doped with a dopant concentration greater than 10 17 cm -3 , and one or more regions with low (or no) doping. The membrane may have a main substrate having low doping and one or more additional layers, wherein said high doped regions are comprised within some or all of said additional layers.
Abstract translation: 公开了对EUV辐射透射的膜，其可以用作光刻设备中的防护薄膜组件或光谱过滤器。 膜包括一个或多个高掺杂区域，其中所述膜掺杂有大于1017cm-3的掺杂剂浓度，以及具有低（或不）掺杂的一个或多个区域。 膜可以具有具有低掺杂和一个或多个附加层的主衬底，其中所述高掺杂区域包含在所述附加层的一些或全部内。
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公开(公告)号：WO2015161934A1
公开(公告)日：2015-10-29
申请号：PCT/EP2015/052043
申请日：2015-02-02
Applicant: ASML NETHERLANDS B.V.
CPC classification number: G03F7/70983 , G03F7/70166 , G03F7/70958 , G21K1/062
Abstract: A lithographic apparatus for projecting a pattern from a patterning device onto a substrate comprises a patterning device support structure constructed to support a patterning device and a substrate support constructed to hold a substrate. The apparatus is configured to receive at an input to the lithographic apparatus a beam of radiation at an operating wavelength and to direct the beam of radiation at the operating wavelength along a radiation path, such that in operation when a patterning device is supported by the patterning device support structure and a substrate is held by the substrate support a pattern from the patterning device is projected onto the substrate. The operating wavelength is one of approximately 4.37nm, approximately 9.49nm, approximately 10.5nm, approximately 11.3nm, approximately 7.1nm, approximately 22.8nm, or in a range of approximately 22.8nm to approximately 25.2nm.
Abstract translation: 用于将图案从图案形成装置投影到基板上的光刻设备包括构造成支撑图案形成装置的图案形成装置支撑结构和构造成保持基板的基板支撑。 该装置被配置为在光刻设备的输入处接收工作波长的辐射束并且沿着辐射路径引导处于工作波长的辐射束，使得在图案形成装置被图案化支撑时的操作中 器件支撑结构和衬底由衬底支撑件保持，来自图案形成装置的图案被投影到衬底上。 工作波长为约4.37nm，约9.49nm，约10.5nm，约11.3nm，约7.1nm，约22.8nm，或约22.8nm至约25.2nm的范围。
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公开(公告)号：EP3762142A1
公开(公告)日：2021-01-13
申请号：EP19706407.4
申请日：2019-02-07
Applicant: ASML Netherlands B.V.
Inventor： KURGANOVA, Evgenia , GIESBERS, Adrianus, Johannes, Maria , KLEIN, Alexander, Ludwig , NASALEVICH, Maxim, Aleksandrovich , NOTENBOOM, Arnoud, Willem , PÉTER, Mária , VAN ZWOL, Pieter-Jan , VLES, David, Ferdinand , VOLLEBREGT, Sten , VOORTHUIJZEN, Willem-Pieter
IPC: B01J23/652 , B01J23/883 , B01J23/885 , B01J23/28 , B01J23/30 , B01J27/22 , B01J21/18 , B01J37/02 , B01J35/00 , G03F1/00 , G03F7/20
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公开(公告)号：EP4202545A1
公开(公告)日：2023-06-28
申请号：EP23157200.9
申请日：2017-04-12
Applicant: ASML Netherlands B.V.
Inventor： NASALEVICH, Maxim, Aleksandrovich , ABEGG, Erik, Achilles , BROUNS, Derk, Servatius, Gertruda , JANSSEN, Paul , KRUIZINGA, Matthias , NIKIPELOV, Andrey, , PÉTER, Mária , SCHUH, Nadja , VAN DE KERKHOF, Marcus, Adrianus , VAN DER ZANDE, Willem, Joan , VAN ZWOL, Pieter-Jan , VERBURG, Antonius, Willem , VERMEULEN, Johannes, Petrus, Martinus, Bernardus , VLES, David, Ferdinand , VOORTHUIJZEN, Willem-Pieter , BANERJEE, Nirupam , BLAUW, Michiel, Alexander , LENDERINK, Egbert , MAXIM, Nicolae , NOTENBOOM, Arnoud, Willem , PILIEGO, Claudia , RISPENS, Gijsbert , ZDRAVKOV, Alexandar, Nikolov
Abstract: The invention concerns a membrane for EUV lithography. The membrane comprises a base layer. The base layer comprises one or more of the following: a stable stoichiometry of Mo and Si, a stable stoichiometry of Ru and Si, a stable stoichiometry of Zr and Si, a stable stoichiometry of La and Si, a stable stoichiometry of Y and Si, and a stable stoichiometry of Nb and Si. The membrane further comprises a capping layer providing an outer surface of the membrane. The invention further concerns a pellicle assembly comprising the membrane of the invention, a patterning device assembly comprising the pellicle assembly of the invention, and a dynamic gas lock assembly comprising the membrane of the invention.
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