Abstract:
A light-emitting element includes a light-emitting stacked layer including an upper surface, wherein the upper surface includes a first flat region; a protective layer including a current blocking region on the first flat region; and a cap region on the upper surface, wherein the current blocking region is spatially separate from the cap region; and a first electrode covering the current blocking region.
Abstract:
A method of chip sorting comprises providing a chip holder having a first surface; providing multiple chips on the first surface; providing a chip receiver having a second surface, wherein the second surface faces the first surface; attaching the multiple chips to the second surface; decreasing an adhesion between the multiple chips and the first surface; and separating the multiple chips from the first surface after the step of decreasing the adhesion between the multiple chips and the first surface.
Abstract:
A light-emitting device includes: a light-emitting stack having an upper surface having a first surface roughness less than 0.2 nm; and an as-cut wafer comprising an irregularly uneven surface facing the light-emitting stack and having a second surface roughness greater than 0.5 μm.
Abstract:
The disclosure provides a light-emitting device. The light-emitting device comprises: a substrate having a first patterned unit; and a light-emitting stack on the substrate and having an active layer with a first surface; wherein the first patterned unit, protruding in a direction from the substrate to the light-emitting stack, has side surfaces abutting with each other and substantially non-parallel to the first surface in cross-sectional view, and has a non-polygon shape in top view.
Abstract:
A nitride-based light-emitting device includes a substrate and a plurality of layers formed over the substrate in the following sequence: a nitride-based buffer layer formed by nitrogen, a first group III element, and optionally, a second group III element, a first nitride-based semiconductor layer, a light-emitting layer, and a second nitride-based semiconductor layer.
Abstract:
A light-emitting diode structure comprising: a substrate; a light-emitting semiconductor stack on the substrate, wherein the light-emitting semiconductor stack comprises a first semiconductor layer, a second semiconductor layer with different polarity from the first semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a first electrical pad on the substrate, wherein the first electrical pad is apart from the light-emitting semiconductor stack and electrically connects to the first semiconductor layer; and a second electrical pad on the substrate, wherein the second electrical pad is apart from the light-emitting semiconductor stack and electrically connects to the second semiconductor layer, wherein the first electrical pad and the second electrical pad are not higher than the light-emitting semiconductor stack.
Abstract:
A nitride-based light-emitting device includes a substrate and a plurality of layers formed over the substrate in the following sequence: a nitride-based buffer layer formed by nitrogen, a first group III element, and optionally, a second group III element, a first nitride-based semiconductor layer, a light-emitting layer, and a second nitride-based semiconductor layer.
Abstract:
A method of manufacturing a light-emitting device, including: providing a substrate structure including a top surface; forming a precursor layer on the top surface; removing a portion of the precursor layer and a portion of the substrate from the top surface to form a base portion and a plurality of protrusions regularly arranged on the base portion; forming a buffer layer on the base portion and the plurality protrusions; and forming a III-V compound cap layer on the buffer layer; wherein one of the plurality of protrusions comprises a first portion and a second portion formed on the first portion; wherein the first portion is integrated with the base portion and has a first material which is the same as that of the base portion; and wherein the buffer layer contacts side surfaces of the plurality of protrusions and a surface of the base portion.
Abstract:
FIG. 1 is a perspective view of a light-emitting diode device showing a first embodiment of our new design; FIG. 2 is a front elevational view thereof; FIG. 3 is a rear elevational view thereof; FIG. 4 is a left side elevational view thereof; FIG. 5 is a right side elevational view thereof; FIG. 6 is a top plan view thereof; FIG. 7 is a bottom plan view thereof; FIG. 8 is a perspective view of a light-emitting diode device showing a second embodiment of our new design; FIG. 9 is a front elevational view thereof; FIG. 10 is a rear elevational view thereof; FIG. 11 is a left side view thereof; FIG. 12 is a right side view thereof; FIG. 13 is a top plan view thereof; FIG. 14 is a bottom plan view thereof; FIG. 15 is a perspective view of a light-emitting diode device showing a third embodiment of our new design; FIG. 16 is a front elevational view thereof; FIG. 17 is a rear elevational view thereof; FIG. 18 is a left side view thereof; FIG. 19 is a right side view thereof; FIG. 20 is a top plan view thereof; FIG. 21 is a bottom plan view thereof; FIG. 22 is a perspective view of a light-emitting diode device showing a fourth embodiment of our new design; FIG. 23 is a front elevational view thereof; FIG. 24 is a rear elevational view thereof; FIG. 25 is a left side view thereof; FIG. 26 is a right side view thereof; FIG. 27 is a top plan view thereof; and, FIG. 28 is a bottom plan view thereof. The broken lines illustrate portions of the light-emitting diode device and form no part of the claimed design.