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    METHOD OF SELECTIVELY TRANSFERRING SEMICONDUCTOR DEVICE
    22.
    发明申请
    METHOD OF SELECTIVELY TRANSFERRING SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20170373219A1

    公开(公告)日：2017-12-28

    申请号：US15683041

    申请日：2017-08-22

    Applicant: EPISTAR CORPORATION

    Inventor： Hao-Min KU ,  You-Hsien CHANG ,  Shih-I CHEN ,  Fu-Chun TSAI ,  Hsin-Chih CHIU

    IPC: H01L33/00 ,  H01L21/683 ,  H01L33/62

    Abstract: A method of transferring multiple semiconductor devices from a first substrate to a second substrate comprises the steps of forming the multiple semiconductor devices adhered on the first substrate, wherein the multiple semiconductor devices comprises a first semiconductor device and a second semiconductor device, and the first semiconductor device and the second semiconductor device have a first gap between thereof; separating the first semiconductor device and the second semiconductor device from the first substrate; sticking the first semiconductor device and the second semiconductor device to a surface of the second substrate, wherein the first semiconductor device and the second semiconductor device have a second gap between thereof; wherein the first gap and the second gap are different.

    LIGHT-EMITTING DEVICE
    24.
    发明申请
    LIGHT-EMITTING DEVICE 有权
    发光装置

    公开(公告)号：US20150155444A1

    公开(公告)日：2015-06-04

    申请号：US14579807

    申请日：2014-12-22

    Applicant: EPISTAR CORPORATION

    Inventor： Shih-I CHEN ,  Wei-Yu CHEN ,  Yi-Ming CHEN ,  Ching-Pei LIN ,  Tsung-Xian LEE

    IPC: H01L33/42

    CPC classification number: H01L33/42 ,  H01L33/382 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Disclosed is a light-emitting device comprising a light-emitting stack having a length, a width, a first conductivity type semiconductor layer, an active layer on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer on the active layer, wherein the first conductivity type semiconductor layer, the active layer, and the second conductivity type semiconductor layer are stacked in a stacking direction. A first electrode is coupled to the first conductivity type semiconductor layer and extended in a direction parallel to the stacking direction and a second electrode is coupled to the second conductivity type semiconductor layer and extended in a direction parallel to the stacking direction. A dielectric layer is disposed between the first electrode and the second electrode.

    Abstract translation: 公开了一种发光器件，其包括具有长度，宽度，第一导电类型半导体层，第一导电类型半导体层上的有源层和有源层上的第二导电类型半导体层的发光堆叠， 其中所述第一导电类型半导体层，所述有源层和所述第二导电类型半导体层在堆叠方向上堆叠。 第一电极耦合到第一导电类型半导体层并且在平行于堆叠方向的方向上延伸，并且第二电极耦合到第二导电类型半导体层并且在平行于层叠方向的方向上延伸。 电介质层设置在第一电极和第二电极之间。

    LIGHT-EMITTING DEVICE
    25.
    发明申请
    LIGHT-EMITTING DEVICE 有权
    发光装置

    公开(公告)号：US20150102285A1

    公开(公告)日：2015-04-16

    申请号：US14515147

    申请日：2014-10-15

    Applicant: EPISTAR CORPORATION

    Inventor： Wen-Luh LIAO ,  Hung-Ta CHENG ,  Yao-Ru CHANG ,  Shih-I CHEN ,  Chia-Liang HSU

    IPC: H01L33/46 ,  H01L33/44 ,  H01L33/42 ,  H01L33/06 ,  H01L33/38

    CPC classification number: H01L33/46 ,  H01L33/06 ,  H01L33/36 ,  H01L33/38 ,  H01L33/387 ,  H01L33/42 ,  H01L33/44

    Abstract: A light-emitting device comprises: a light-emitting stack having an active layer; a transparent insulating layer on the light-emitting stack; and an electrode structure having a first electrode on the transparent insulating layer; wherein a surface area of a surface of the first electrode distal from the transparent insulating layer is smaller than a surface area of a surface of the transparent insulating layer distal from the light-emitting stack, the reflectivity of the transparent insulating layer is between 1 and 3.4 both inclusive, and the transmittance of the transparent insulating layer is greater than 80%.

    Abstract translation: 发光装置包括：具有活性层的发光叠层; 在发光叠层上的透明绝缘层; 以及在透明绝缘层上具有第一电极的电极结构; 其中，所述第一电极的远离所述透明绝缘层的表面的表面积小于远离所述发光层的所述透明绝缘层的表面的表面积，所述透明绝缘层的反射率在1〜 3.4，透明绝缘层的透射率大于80％。

    LIGHT-EMITTING DEVICE
    27.
    发明申请
    LIGHT-EMITTING DEVICE 有权
    发光装置

    公开(公告)号：US20140225138A1

    公开(公告)日：2014-08-14

    申请号：US14174036

    申请日：2014-02-06

    Applicant: Epistar Corporation

    Inventor： Tsung-Hsien YANG ,  Tzu-Chieh HSU ,  Yi-Ming CHEN ,  Yi-Tang LAI ,  Jhih-Jheng YANG ,  Chih-Wei WEI ,  Ching-Sheng CHEN ,  Shih-I CHEN ,  Chia-Liang HSU ,  Ye-Ming HSU

    IPC: H01L33/22

    CPC classification number: H01L33/02 ,  H01L33/0079

    Abstract: A light-emitting device is disclosed and comprises: a transparent substrate; a semiconductor light-emitting stack on the transparent substrate, wherein the semiconductor light-emitting stack comprises a first semiconductor layer close to the transparent substrate, a second semiconductor layer away from the transparent substrate, and a light-emitting layer capable of emitting a light disposed between the first semiconductor layer and the second semiconductor layer; and a bonding layer between the transparent substrate and the semiconductor light-emitting stack, wherein the bonding layer has a gradually changed refractive index, and each of critical angles at the bonding layer and the transparent substrate for the light emitted from the light-emitting layer towards the transparent substrate is larger than 35 degrees.

    Abstract translation: 公开了一种发光器件，包括：透明衬底; 在所述透明基板上的半导体发光层，其中，所述半导体发光层包括靠近所述透明基板的第一半导体层，远离所述透明基板的第二半导体层，以及能够发光的发光层 设置在第一半导体层和第二半导体层之间; 以及在所述透明基板和所述半导体发光叠层之间的接合层，其中所述接合层具有逐渐变化的折射率，并且所述接合层处的临界角和从所述发光层发射的光的所述透明基板 朝向透明基板大于35度。

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