公开(公告)号：DE10152002A1

公开(公告)日：2003-05-08

申请号：DE10152002

申请日：2001-10-22

Applicant: INFINEON TECHNOLOGIES AG

Inventor： EHBEN THOMAS ,  FRITZ MICHAELA ,  HANEDER THOMAS

IPC: G01N33/543 ,  B81B1/00 ,  B81C1/00 ,  C12Q1/68 ,  G01N33/50

公开(公告)号：DE19926767A1

公开(公告)日：2000-12-21

申请号：DE19926767

申请日：1999-06-11

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HANEDER THOMAS ,  SCHINDLER GUENTHER

IPC: H01L21/8247 ,  H01L21/336 ,  H01L21/8246 ,  H01L27/105 ,  H01L29/78 ,  H01L29/788 ,  H01L29/792

Abstract: Two source/drain regions (12, 22, 32) between which a channel region is arranged are provided for in a semiconductor substrate (11, 21, 31). A gate dielectric comprising a dielectric intermediate layer (13, 23, 33) and a dielectric structure (14, 24, 34) is positioned on the surface of the channel region. The dielectric structure (14, 24, 34) borders on the dielectric intermediate layer (12, 22, 32) on at least one side which is directed towards one of the source/drain regions (12, 22, 32), whereby the thickness of the gate dielectric above the edge of the source/drain region is greater than the thickness of the dielectric intermediate layer.

公开(公告)号：DE19926766A1

公开(公告)日：2000-12-21

申请号：DE19926766

申请日：1999-06-11

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HANEDER THOMAS ,  HOENIGSCHMID HEINZ ,  BRAUN GEORG ,  ROEHR THOMAS ,  SCHINDLER GUENTHER ,  HARTNER WALTER ,  BOEHM THOMAS ,  WENDT HERMANN

IPC: H01L29/78

Abstract: According to the invention, two source/drain regions (121, 122) between which a channel region is arranged are provided for on a semiconductor substrate. On the surface of the channel region a gate dielectric (13) is positioned. Above the gate dielectric (13) a ferroelectric layer (14) and a gate electrode (15) are arranged. The ferroelectric layer (14) overlaps one of the source/drain regions (121). To change the polarization of the ferroelectric layer (14) a voltage can be applied between the gate electrode (15) and the overlapped source/drain region (121).

公开(公告)号：DE50305038D1

公开(公告)日：2006-10-26

申请号：DE50305038

申请日：2003-03-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： DERTINGER STEPHAN ,  FRITZ MICHAELA ,  FUCHS KARIN ,  HANEDER THOMAS ,  LEHMANN VOLKER ,  MARTIN ALFRED ,  MAERZ REINHARD

IPC: B01L3/00 ,  B01J19/00 ,  C30B33/00 ,  C40B40/06 ,  C40B40/10 ,  C40B60/14 ,  G01N33/543

Abstract: Device having a flat macroporous support material made of silicon and having surfaces, a plurality of pores each having a diameter in a range of from 500 nm to 100 mum distributed over at least one surface region of the support material and extending from one surface through to the opposite surface of the support material, at least one region having one or more pores with SiO2 pore walls, and a frame of walls with a silicon core surrounding the at least one region and arranged essentially parallel to longitudinal axes of the pores and open towards the surfaces, wherein the silicon core merges into silicon dioxide over a cross section towards an outer side of the walls forming the frame.

公开(公告)号：DE50201320D1

公开(公告)日：2004-11-18

申请号：DE50201320

申请日：2002-06-20

Applicant: INFINEON TECHNOLOGIES AG

Inventor： FRITZ MICHAELA ,  DERTINGER STEPHAN ,  FUCHS KARIN ,  HANEDER THOMAS ,  HANKE HANS-CHRISTIAN ,  JENKNER MARTIN ,  LEHMANN VOLKER ,  PAULUS CHRISTIAN

IPC: G01N37/00 ,  B01J19/00 ,  B01L3/00 ,  B01L3/02 ,  B81B1/00 ,  G01N35/10

Abstract: An apparatus, in which at least one pipette in the form of a through-hole with a predetermined diameter is formed in a substrate, with a rim of the through-hole projecting by a predetermined amount from an adjacent surface of the substrate.

公开(公告)号：DE10217568A1

公开(公告)日：2003-11-13

申请号：DE10217568

申请日：2002-04-19

Applicant: INFINEON TECHNOLOGIES AG

Inventor： DERTINGER STEPHAN ,  HANEDER THOMAS ,  FUCHS KARIN ,  HANKE CHRISTIAN ,  FRITZ MICHAELA ,  MARTIN ALFRED ,  MAERZ REINHARD

IPC: G01N21/64 ,  B01D67/00 ,  B01D69/02 ,  B01J19/00 ,  B01L3/00 ,  C40B40/06 ,  C40B40/10 ,  C40B60/14 ,  G01N21/55 ,  G01N21/76 ,  G01N33/53 ,  G01N33/543 ,  G01N33/566 ,  G02B6/122 ,  G01N33/50 ,  G01N33/68 ,  C12Q1/00 ,  C12Q1/68 ,  C12M1/34

Abstract: The invention relates to a device comprising a planar support material (16), which has a plurality of pores (10) distributed over at least one surface region, said pores extending in a continuous manner from one surface (12) of the support material (16) to the opposite surface (14). The invention is characterised in that the pores (10) are delimited along their longitudinal axis by a pore limiting surface (18) of the pore walls (22) configured in the support material (16), that at least one part of the pore walls (22) has, at least in sections, a layered construction comprising a first layer (20) that forms the pore limiting surface (18) and a second layer (24) that is adjacent to the first layer (20) and located at a distance from the pore limiting surface (18) and that the refractive index nWaveguide of the first layer (20) is greater than the refractive index n2 of the second layer (24).

公开(公告)号：AU2003224085A1

公开(公告)日：2003-11-03

申请号：AU2003224085

申请日：2003-04-16

Applicant: INFINEON TECHNOLOGIES AG

Inventor： FRITZ MICHAELA ,  FUCHS KARIN ,  HANEDER THOMAS ,  HANKE HANS-CHRISTIAN ,  MARTIN ALFRED ,  MARZ REINHARD ,  DERTINGER STEPHAN

IPC: G01N21/64 ,  B01D67/00 ,  B01D69/02 ,  B01J19/00 ,  B01L3/00 ,  C40B40/06 ,  C40B40/10 ,  C40B60/14 ,  G01N21/55 ,  G01N21/76 ,  G01N33/53 ,  G01N33/543 ,  G01N33/566 ,  G02B6/122

Abstract: The invention relates to a device comprising a planar support material (16), which has a plurality of pores (10) distributed over at least one surface region, said pores extending in a continuous manner from one surface (12) of the support material (16) to the opposite surface (14). The invention is characterised in that the pores (10) are delimited along their longitudinal axis by a pore limiting surface (18) of the pore walls (22) configured in the support material (16), that at least one part of the pore walls (22) has, at least in sections, a layered construction comprising a first layer (20) that forms the pore limiting surface (18) and a second layer (24) that is adjacent to the first layer (20) and located at a distance from the pore limiting surface (18) and that the refractive index nWaveguide of the first layer (20) is greater than the refractive index n2 of the second layer (24).

公开(公告)号：DE10142691A1

公开(公告)日：2003-03-27

申请号：DE10142691

申请日：2001-08-31

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HANEDER THOMAS ,  MARTIN ALFRED ,  LEHMANN VOLKER ,  EHBEN THOMAS ,  HANKE HANS CHRISTIAN ,  FUCHS KARIN

IPC: B01J19/00 ,  B01L3/00 ,  C40B40/06 ,  C40B40/10 ,  C40B40/12 ,  C40B60/14 ,  G01N33/543 ,  G01N33/50 ,  G01N33/68 ,  C12Q1/68 ,  C12M1/34

Abstract: Detecting biochemical reactions, a substrate (10) is used of silicon with macro-pores (11) passing through from at least at one side (10A,10B), with a diameter of 500 nm to 100 micro m. At least one catch molecule (20) is immobilized in each pore, in a specific location at the inner walls of at least part of the pores to give a biochemical reaction, using DNA, proteins and ligands. Analytes are introduced, to make contact with the catch molecules, using DNA, RNA, peptide nucleic acid (PNA), saccharide, peptide, proteins, cellular components, single cells, multi-cellular organisms and the like. A surface (10A) of the substrate is illuminated (40), and the light transmission through the pores is measured (50) at the other surface to show the reactions which have occurred within the pores.

公开(公告)号：DE10103339C2

公开(公告)日：2003-02-06

申请号：DE10103339

申请日：2001-01-25

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ENGELHARDT MANFRED ,  HANEDER THOMAS

IPC: H01L25/16 ,  H01L27/30 ,  H01L31/16 ,  H01L33/20 ,  H01L51/30 ,  H01L51/42 ,  H01L51/50 ,  B81C1/00 ,  B81C3/00 ,  H01L31/0248 ,  H01L33/00 ,  H01L51/00

公开(公告)号：DE10103339A1

公开(公告)日：2002-08-22

申请号：DE10103339

申请日：2001-01-25

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ENGELHARDT MANFRED ,  HANEDER THOMAS

IPC: H01L25/16 ,  H01L27/30 ,  H01L31/16 ,  H01L33/20 ,  H01L51/30 ,  H01L51/42 ,  H01L51/50 ,  B81C1/00 ,  B81C3/00 ,  H01L31/0248 ,  H01L33/00 ,  H01L51/00

Abstract: An optical coupler comprises a voltage source; a first nano-tube (101) having a diameter which forms energy gaps for the charge carrier in the tube; and a light receiving unit (209) arranged relative to the first tube so that light emitted by the tube partially hits the light receiving unit. Preferred Features: The light receiving unit is a semiconductor photodiode and has a second nano-tube (203) arranged relative to the first tube so that light emitted by the tube partially hits the second tube. The light receiving unit further comprises a measuring unit (205) to acquire the electrical conductivity of the second tube. The nano-tubes are carbon nano-tubes.