中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

44 records (took 0.027 seconds)

    METHOD AND APPARATUS OF CLEANING SUBSTRATE USING NON-NEWTONIAN FLUID
    21.
    发明专利
    METHOD AND APPARATUS OF CLEANING SUBSTRATE USING NON-NEWTONIAN FLUID 审中-公开

    公开(公告)号：JP2006352130A

    公开(公告)日：2006-12-28

    申请号：JP2006164312

    申请日：2006-06-14

    Applicant: LAM RES CORP

    Inventor： DE LARIOS JOHN M ,  RAVKIN MIKE ,  FARBER JEFFREY ,  KOROLIK MIKHAIL ,  REDEKER FRED C

    IPC: H01L21/304

    Abstract: PROBLEM TO BE SOLVED: To provide a method of cleaning a substrate using a non-newtonian fluid. SOLUTION: A non-newtonian fluid flowing between a surface of a supply unit 704 and a surface of a substrate 702 has a high yield point compared with shearing stress applied to the non-newtonian fluid over a gap 706. Therefore, most of flow of the fluid becomes plug flow. In other words, part of flow to be the plug flow substantially extends between the surface of the supply unit 704 and the surface of the substrate 702. Therefore, a flow rate profile of the flow is substantially uniform. In an embodiment, the term "substantially" implies that the plug flow extends about 80% to 100% between the surfaces. COPYRIGHT: (C)2007,JPO&INPIT

    22.
    发明专利
    未知

    公开(公告)号：DE60314508D1

    公开(公告)日：2007-08-02

    申请号：DE60314508

    申请日：2003-09-30

    Applicant: LAM RES CORP

    Inventor： DE LARIOS JOHN M ,  GARCIA JAMES P ,  WOODS CARL ,  RAVKIN MIKE ,  REDEKER FRITZ ,  BOYD JOHN ,  NICKHOU AFSHIN

    IPC: H01L21/00

    Abstract: One of many embodiments of a substrate preparation system is provided which includes a head having a head surface where the head surface is proximate to a surface of the substrate. The system also includes a first conduit for delivering a first fluid to the surface of the substrate through the head, and a second conduit for delivering a second fluid to the surface of the substrate through the head, where the second fluid is different than the first fluid. The system also includes a third conduit for removing each of the first fluid and the second fluid from the surface of the substrate where the first conduit, the second conduit and the third conduit act substantially simultaneously. In an alternative embodiment, a method for processing a substrate is provided that includes generating a fluid meniscus on a surface of the substrate and applying acoustic energy to the fluid meniscus. The method also includes moving the fluid meniscus over the surface the substrate to process the surface of the substrate.

    METHOD AND APPARATUS FOR REMOVING CONTAMINATION FROM SUBSTRATE
    23.
    发明专利
    METHOD AND APPARATUS FOR REMOVING CONTAMINATION FROM SUBSTRATE 未知

    公开(公告)号：MY158269A

    公开(公告)日：2016-09-30

    申请号：MYPI20082348

    申请日：2006-12-08

    Applicant: LAM RES CORP

    Inventor： JOHN PARKS ,  REDEKER FRED C ,  MIKHAIL KOROLIK ,  KATRINA MIKHAYLICHENKO ,  CLINT THOMAS ,  FREER ERIK M ,  DE LARIOS JOHN M ,  RAVKIN MICHAEL

    IPC: B08B7/00

    Abstract: 39 METHOD AND APPARATUS FOR REMOVING CONTAMINATION FROM SUBSTRATE ABSTRACT A CLEANING MATERIAL IS DISPOSED OVER A SUBSTRATE. THE CLEANING MATERIAL INCLUDES SOLID COMPONENTS DISPERSED WITHIN A LIQUID MEDIUM. A FORCE IS APPLIED TO THE SOLID 5 COMPONENTS WITHIN THE LIQUID MEDIUM TO BRING THE SOLID COMPONENTS WITHIN PROXIMITY TO CONTAMINANTS PRESENT ON THE SUBSTRATE. THE FORCE APPLIED TO THE SOLID COMPONENTS CAN BE EXERTED BY AN IMMISCIBLE COMPONENT WITHIN THE LIQUID MEDIUM. WHEN THE SOLID COMPONENTS ARE BROUGHT WITHIN SUFFICIENT PROXIMITY TO THE CONTAMINANTS, AN INTERACTION IS ESTABLISHED BETWEEN THE SOLID COMPONENTS AND THE CONTAMINANTS. THEN, THE SOLID 10 COMPONENTS ARE MOVED AWAY FROM THE SUBSTRATE SUCH THAT THE CONTAMINANTS HAVING INTERACTED WITH THE SOLID COMPONENTS ARE REMOVED FROM THE SUBSTRATE.

    Apparatus and system for cleaning substrate
    24.
    发明专利
    Apparatus and system for cleaning substrate 审中-公开
    用于清洁基板的装置和系统

    公开(公告)号：JP2007208247A

    公开(公告)日：2007-08-16

    申请号：JP2006353540

    申请日：2006-12-28

    Applicant: Lam Res Corp ,  ラム リサーチ コーポレーションLam Research Corporation

    Inventor： FREER ERIK M ,  DE LARIOS JOHN M ,  MIKHAYLICHENKO KATRINA ,  RAVKIN MICHAEL ,  KOROLIK MIKHAIL ,  REDEKER FRED C ,  THOMAS CLINT ,  PARKS JOHN

    IPC: H01L21/304

    CPC classification number: H01L21/67051 ,  B08B3/003 ,  B08B3/02

    Abstract: PROBLEM TO BE SOLVED: To provide a cleaning apparatus and a method thereof which can remove particulate contamination substance of a sufficiently small size, even if the substance has a shape of a high aspect ratio.
    SOLUTION: The apparatus for cleaning a substrate 116 is disclosed. The apparatus is provided with a first head unit 110 and a second head unit 112. The first head unit 110 is arranged proximate to the surface of the substrate and is provided with a first row of channels configured to supply a foam to the surface of the substrate. The second head unit 112 is arranged substantially adjacent to the first head unit and proximate to the surface of the substrate. The second head unit is provided with a second and a third row of channels. The second row of channels 112 is configured to supply a fluid to the surface of the substrate. The third row of channels 114 is configured to cause a vacuum to work on the surface of the substrate.
    COPYRIGHT: (C)2007,JPO&INPIT

    Abstract translation: 要解决的问题：即使该物质具有高纵横比的形状，也可提供能够去除足够小尺寸的微粒污染物质的清洁装置及其方法。 解决方案：公开了一种用于清洁衬底116的设备。 该设备设置有第一头单元110和第二头单元112.第一头单元110布置成靠近基底的表面，并且设置有第一排通道，其构造成将泡沫供应到 基质。 第二头单元112被布置成基本上与第一头单元相邻并且靠近衬底的表面。 第二头单元设置有第二和第三排通道。 第二排通道112构造成将流体供应到基板的表面。 第三排通道114构造成使真空在基板的表面上起作用。 版权所有（C）2007，JPO＆INPIT

    Proximity meniscus manifold
    27.
    发明专利
    Proximity meniscus manifold 有权
    临近男子名人录音

    公开(公告)号：JP2005340781A

    公开(公告)日：2005-12-08

    申请号：JP2005100378

    申请日：2005-03-31

    Applicant: Lam Res Corp ,  ラム リサーチ コーポレーションLam Research Corporation

    Inventor： WOODS CARL ,  SMITH MICHAEL G R ,  PARKS JOHN ,  GARCIA JAMES P ,  DE LARIOS JOHN M

    IPC: B05C9/02 ,  B05D1/00 ,  B05D3/12 ,  H01L21/00 ,  H01L21/02 ,  H01L21/027 ,  H01L21/304 ,  H01L21/306

    CPC classification number: H01L21/67063 ,  B05C9/02 ,  H01L21/02052 ,  H01L21/67023 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/6704 ,  H01L21/67051 ,  H01L21/6708 ,  Y10S134/902

    Abstract: PROBLEM TO BE SOLVED: To reduce contamination and reduce wafer cleaning cost in semiconductor wafer processing.
    SOLUTION: Management of movement of a manifold carrier 104, movement of a secondary manifold 102, flow-in and drain of a fluid between a primary manifold 106 and the secondary manifold 102, and flow-in and drain of a fluid using a flow-in channel and a drain channel are managed by a fluid controller 250. The fluid controller 250 comprises any appropriate software and/or hardware that is executable of appropriate adjustment and movement required for monitoring wafer processing and processing a wafer 108 as required using the primary manifold 106, secondary manifold 102, and manifold carrier 104. The secondary manifold 102 further moves the primary manifold 106 to an opening 109.
    COPYRIGHT: (C)2006,JPO&NCIPI

    Abstract translation: 要解决的问题：减少半导体晶片加工中的污染和降低晶圆清洗成本。 解决方案：管理歧管支架104的运动，辅助歧管102的运动，在主歧管106和次级歧管102之间的流体的流入和排出，以及流体的流入和排出，使用 流体通道和排出通道由流体控制器250管理。流体控制器250包括任何适当的软件和/或硬件，其可执行适当的调整和移动，用于根据需要监视晶片处理和处理晶片108所需的使用 主歧管106，次级歧管102和歧管载体104.次级歧管102进一步将主歧管106移动到开口109.版权所有：（C）2006，JPO＆NCIPI

    Control of ambient environment using proximity head during wafer drying
    28.
    发明专利
    Control of ambient environment using proximity head during wafer drying 有权
    在干燥期间使用接头头控制环境环境

    公开(公告)号：JP2005311354A

    公开(公告)日：2005-11-04

    申请号：JP2005100376

    申请日：2005-03-31

    Applicant: Lam Res Corp ,  ラム リサーチ コーポレーションLam Research Corporation

    Inventor： KOROLIK MIKHAIL ,  DE LARIOS JOHN M ,  RAVKIN MIKE ,  FARBER JEFFREY

    IPC: H01L21/304 ,  B08B3/04 ,  H01L21/00

    CPC classification number: H01L21/67028 ,  H01L21/67034 ,  H01L21/67051 ,  Y10S134/902

    Abstract: PROBLEM TO BE SOLVED: To provide an apparatus which efficiently supplies and removes fluids to and from wafer surfaces while reducing contamination and decreasing wafer cleaning cost. SOLUTION: While a fluid meniscus treats a top surface 108a, a wafer 108 is rotated, or may be held still, and a proximity head 106 is moved. The proximity head 106 includes source inlets 1302 and 1306 and a source outlet 1304. Isopropyl alcohol vapor 1310 in nitrogen gas is supplied to the wafer surface through the source inlet 1302, and a vacuum 1312 acts on the wafer surface through the source outlet 1304, and a treatment fluid 1314 is supplied to the wafer surface through the source inlet 1306. COPYRIGHT: (C)2006,JPO&NCIPI

    Abstract translation: 要解决的问题：提供一种有效地向晶片表面提供流体并从晶片表面去除流体的设备，同时减少污染并降低晶片清洁成本。 解决方案：当流体弯液面处理顶部表面108a时，晶片108被旋转或者可以保持静止，并且接近头部106被移动。 邻近头106包括源入口1302和1306以及源出口1304.氮气中的异丙醇蒸汽1310通过源入口1302供应到晶片表面，并且真空1312通过源出口1304作用在晶片表面上， 并且处理流体1314通过源入口1306供应到晶片表面。版权所有：（C）2006，JPO＆NCIPI

    PROXIMITY HEAD WITH ANGLED VACUUM CONDUIT SYSTEM, APPARATUS AND METHOD
    29.
    发明专利
    PROXIMITY HEAD WITH ANGLED VACUUM CONDUIT SYSTEM, APPARATUS AND METHOD 未知

    公开(公告)号：SG176462A1

    公开(公告)日：2011-12-29

    申请号：SG2011081833

    申请日：2008-02-22

    Applicant: LAM RES CORP

    Inventor： RAVKIN MICHAEL ,  DE LARIOS JOHN M ,  REDEKER FRED C ,  KOROLIK MIKHAIL ,  FREER ERIK M

    Abstract: A proximity head including a head surface. The head surface including a first flat region and a plurality of first conduits. Each one of the plurality of first conduits being defined by corresponding one of a plurality of first discrete holes. The plurality of first discrete holes residing in the head surface and extending through the first flat region. The head surface also including a second flat region and a plurality of second conduits. The plurality of second conduits being defined by a corresponding plurality of second discrete holes that reside in the head surface and extend through the second flat region. The head surface also including a third flat region disposed between and adjacent to the first flat region and the second flat region and a plurality of third conduits. The plurality of third conduits being defined by a corresponding plurality of third discrete holes that reside in the head surface and extend through the third flat region. The third conduits being formed at a first angle relative to the third flat region. The first angle being between 30 and 60 degrees. A system and method for processing a substrate with a proximity head is also described.(Fig. 2A)

Patent Agency Ranking