公开(公告)号：SG10201405549VA

公开(公告)日：2015-04-29

申请号：SG10201405549V

申请日：2014-09-08

Applicant: LAM RES CORP

Inventor： DHINDSA RAJINDER ,  NAM SANG KI ,  MARAKHTANOV ALEXEI ,  HUDSON ERIC A

公开(公告)号：SG174500A1

公开(公告)日：2011-10-28

申请号：SG2011068251

申请日：2010-04-05

Applicant: LAM RES CORP

Inventor： JI BING ,  TAKESHITA KENJI ,  BAILEY ANDREW D III ,  HUDSON ERIC A ,  MORAVEJ MARYAM ,  SIRARD STEPHEN M ,  KO JUNGMIN ,  LE DANIEL ,  HEFTY ROBERT C ,  CHENG YU ,  DELGADINO GERATDO A ,  YEN BI-MING

Abstract: A method for etching features in a low-k dielectric layer disposed below an organic mask is provided by an embodiment of the invention. Features are etched into the low-k dielectric layer through the organic mask. A fluorocarbon layer is deposited on the low-k dielectric layer. The fluorocarbon layer is cured. The organic mask is stripped.

公开(公告)号：SG144148A1

公开(公告)日：2008-07-29

申请号：SG2008043630

申请日：2006-03-02

Applicant: LAM RES CORP

Inventor： SADJADI S M REZA ,  HUDSON ERIC A ,  CIRIGLIANO PETER ,  KIM JI SOO ,  HUANG ZHISONG

Abstract: STABILIZED PHOTORESIST STRUCTURE FOR ETCHING PROCESS A method for forming features in an etch layer is provided. A first mask is formed over the etch layer where the first mask defines a plurality of spaces with widths. The first mask is laterally etched where the etched first mask defines a plurality of spaces with widths that are greater than the widths of the spaces of the first mask. A sidewall layer is formed over the etched first mask where the sidewall layer defines a plurality of spaces with widths that are less than the widths of the spaces defined by the etched first mask. Features are etched into the etch layer through the sidewall layer, where the features have widths that are smaller than the widths of the spaces defined by the etched first mask. The mask and sidewall layer are removed.

公开(公告)号：SG10201404501VA

公开(公告)日：2015-03-30

申请号：SG10201404501V

申请日：2014-07-31

Applicant: LAM RES CORP

Inventor： HUDSON ERIC A

Abstract: A method for etching features into an etch layer in a stack disposed below a patterned mask with mask features is provided. Coating providing molecules are provided. The coating providing molecules are pyrolyzed, which only produces a first set of byproducts and a second set of byproducts, wherein the first set of byproducts have a sticking coefficient between 10−6 to 5×10−3 and wherein the second set of byproducts includes all remaining byproducts from the pyrolysis wherein all remaining byproducts from the pyrolysis have sticking coefficients less than 10−6. The stack is exposed to the first set of byproducts, causing the first set of byproducts to deposit a coating. The etch layer is etched.

公开(公告)号：IL205779A

公开(公告)日：2011-08-31

申请号：IL20577910

申请日：2010-05-13

Applicant: LI LUMIN ,  LAM RES CORP ,  HUDSON ERIC A ,  RUSU CAMELIA ,  DHINDSA RAJINDER ,  SRINIVASAN MUKUND ,  KOZAKEVICH FELIX

Inventor： LI LUMIN ,  HUDSON ERIC A ,  RUSU CAMELIA ,  DHINDSA RAJINDER ,  SRINIVASAN MUKUND ,  KOZAKEVICH FELIX

IPC: B23B3/10 ,  H01J37/32 ,  H01L21/311 ,  H01L21/467 ,  H05H1/46

Abstract: A method for etching a high aspect ratio feature through a mask into a layer to be etched over a substrate is provided. The substrate is placed in a process chamber, which is able to provide RF power at a first frequency, a second frequency different than the first frequency, and a third frequency different than the first and second frequency. An etchant gas is provided to the process chamber. A first etch step is provided, where the first frequency, the second frequency, and the third frequency are at power settings for the first etch step. A second etch step is provided, where the first frequency, the second frequency, and the third frequency are at a different power setting.

公开(公告)号：SG149047A1

公开(公告)日：2009-01-29

申请号：SG2008094583

申请日：2004-07-29

Applicant: LAM RES CORP

Inventor： KANG SEAN S ,  LEE SANGHEON ,  CHEN WAN-LIN ,  HUDSON ERIC A ,  SADJADI S M REZA ,  ZHAO GAN MING

IPC: H01L21/033 ,  H01L21/311 ,  H01L21/768

Abstract: REDUCTION OF FEATURE CRITICAL DIMENSIONS A feature in a layer (308) is provided. A photoresist layer is formed over the layer (308). The photoresist layer is patterned to form photoresist features (312) with photoresist sidewalls, where the photoresist features (312) have a first critical dimension (316). A conformal layer (320) is deposited over the sidewalls of the photoresist features (312) to reduce the critical dimensions of the photoresist features (312). Features are etched into the layer (308), wherein the layer (308) features have a second critical dimension (324), which is less than the first critical dimension (316). Fig. 3C