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    WET-DEVELOPABLE ANTI-REFLECTIVE COMPOSITIONS
    33.
    发明专利
    WET-DEVELOPABLE ANTI-REFLECTIVE COMPOSITIONS 未知

    公开(公告)号：AU2003247629A1

    公开(公告)日：2004-01-06

    申请号：AU2003247629

    申请日：2003-06-24

    Applicant: BREWER SCIENCE INC

    Inventor： NEEF CHARLES J ,  KRISHNAMURTHY VANDANA

    IPC: C08G79/00 ,  C08L85/00 ,  G02B1/11

    Abstract: Anti-reflective compositions and methods of using these compositions to form circuits are provided. The compositions comprise a polymer dissolved or dispersed in a solvent system. In a preferred embodiment, the polymers include a light-attenuating moiety having a structure selected from the group consisting of:where:each of X and Y is individually selected from the group consisting of electron withdrawing groups;R is selected from the group consisting of alkyls and aryls; andR is selected from the group consisting of hydrogen and alkyls.The resulting compositions are spin bowl compatible (i.e., they do not crosslink prior to the bake stages of the microlithographic processes or during storage at room temperature), are wet developable, and have superior optical properties.

    Polymeric antireflective coatings deposited by plasma enhanced chemical vapor deposition
    34.
    发明专利
    Polymeric antireflective coatings deposited by plasma enhanced chemical vapor deposition 未知

    公开(公告)号：AU2003223582A8

    公开(公告)日：2003-10-27

    申请号：AU2003223582

    申请日：2003-04-11

    Applicant: BREWER SCIENCE INC

    Inventor： SHIH WU-SHENG ,  SABNIS RAM W

    IPC: C23C14/12 ,  G02B1/11 ,  G03F7/09 ,  H01L21/027 ,  G03F7/30

    Abstract: An improved method for applying polymeric antireflective coatings to substrate surfaces and the resulting precursor structures are provided. Broadly, the methods comprise plasma enhanced chemical vapor depositing (PECVD) a polymer on the substrate surfaces. The most preferred starting monomers are 4-fluorostyrene, 2,3,4,5,6-pentafluorostyrene, and allylpentafluorobenzene. The PECVD processes comprise subjecting the monomers to sufficient electric current and pressure so as to cause the monomers to sublime to form a vapor which is then changed to the plasma state by application of an electric current. The vaporized monomers are subsequently polymerized onto a substrate surface in a deposition chamber. The inventive methods are useful for providing highly conformal antireflective coatings on large surface substrates having super submicron (0.25 mum or smaller) features. The process provides a much faster deposition rate than conventional chemical vapor deposition (CVD) methods, is environmentally friendly, and is economical.

    ORGANIC POLYMERIC ANTIREFLECTIVE COATINGS DEPOSITED BY CHEMICAL VAPOR DEPOSITION
    38.
    发明专利
    ORGANIC POLYMERIC ANTIREFLECTIVE COATINGS DEPOSITED BY CHEMICAL VAPOR DEPOSITION 未知

    公开(公告)号：CA2400157A1

    公开(公告)日：2001-08-30

    申请号：CA2400157

    申请日：2001-02-02

    Applicant: BREWER SCIENCE INC

    Inventor： SPENCER MARY J ,  SABNIS RAM W ,  GUERRERO DOUGLAS ,  BREWER TERRY

    IPC: G03F7/11 ,  C23C16/46 ,  G03F7/09 ,  H01L21/027 ,  G03C1/76 ,  G03F7/00 ,  G11B7/24 ,  G03C1/492 ,  G03C1/494

    Abstract: An improved method for applying organic antireflective coatings to substrate surfaces and the resulting precursor structures are provided. Broadly, the methods comprise chemical vapor depositing (CVD) an antireflective compound on the substrate surface. In one embodiment, the compound is highly strained (e.g., having a strain energy of at least about 10 kcal/mol) and comprises t wo cyclic moieties joined to one another via a linkage group. The most preferre d monomers are [2.2](1,4)-naphthalenophane and [2.2](9,10)-anthracenophane. Th e CVD processes comprise heating the antireflective compound so as to vaporize it, and then pyrolizing the vaporized compound to form stable diradicals whi ch are subsequently polymerized on a substrate surface in a deposition chamber. The inventive methods are useful for providing highly conformal antireflecti ve coatings on large substrate surfaces having super submicron (0.25.mu.m or smaller) features.

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