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公开(公告)号：KR1020130048938A
公开(公告)日：2013-05-13
申请号：KR1020110113873
申请日：2011-11-03
Applicant: 성균관대학교산학협력단
CPC classification number: H01L31/02366 , H01L31/0392 , Y02E10/50
Abstract: PURPOSE: A method for manufacturing a glass substrate for a solar cell and a sputtering apparatus are provided to improve the photoelectric conversion efficiency of a solar cell including a transparent conduction layer by controlling the angle of a target. CONSTITUTION: A target is mounted on a target support part positioned in a chamber(S110). A substrate is mounted on a susceptor positioned in the chamber(S130). A target angle between the target and the substrate is controlled(S150). A target material is deposited on the substrate to form a metal oxide layer having a texture(S170). [Reference numerals] (AA) Start; (BB) End; (S110) Mount a target; (S130) Mount a substrate on a susceptor; (S150) Control a target angle between the target and the substrate; (S170) Form a metal oxide layer having a texture
Abstract translation: 目的：提供一种太阳能电池用玻璃基板的制造方法和溅射装置，通过控制靶的角度来提高包含透明导电层的太阳能电池的光电转换效率。 构成：将目标安装在位于腔室中的目标支撑部件上（S110）。 衬底安装在位于腔室中的基座上（S130）。 控制靶与基板之间的目标角度（S150）。 靶材料沉积在衬底上以形成具有纹理的金属氧化物层（S170）。 （附图标记）（AA）开始; （BB）结束; （S110）安装目标; （S130）将基板安装在基座上; （S150）控制目标和基板之间的目标角度; （S170）形成具有纹理的金属氧化物层
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公开(公告)号：KR101215110B1
公开(公告)日：2012-12-24
申请号：KR1020110113850
申请日：2011-11-03
Applicant: 성균관대학교산학협력단
IPC: H01L31/04 , H01L31/0236 , H01L31/18
CPC classification number: Y02E10/50 , H01L31/04 , H01L31/0236 , H01L31/18
Abstract: PURPOSE: A method for manufacturing a compliant substrate for a solar cell is provided to simplify manufacturing process by omitting a dry etching mode, a mechanical grooving mode, and a wet etching mode. CONSTITUTION: A frame in which an uneven portion is formed on the surface is prepared(S110). A polymer film is formed on the frame with a spin coating process(S120). The polymer film is hardened(S130). A metal layer is formed on the front side of the polymer film(S140). A first transparent conductive film is formed on the metal layer(S150). A protective film is formed on the rear side of the polymer film(S160). [Reference numerals] (AA) Start; (BB) End; (S110) Preparing a frame with an uneven portion; (S120) Forming a polymer film on a frame with a spin coating process; (S130) Hardening a polymer film; (S140) Forming a metal film on the front side of the polymer film; (S150) Forming a first transparent conductive film on the metal film; (S160) Forming a protection film on the rear of the polymer film
Abstract translation: 目的：提供一种用于制造用于太阳能电池的柔性衬底的方法，以通过省略干蚀刻模式，机械开槽模式和湿蚀刻模式来简化制造工艺。 构成：准备在表面形成有凹凸部的框架（S110）。 用旋涂法在框架上形成聚合物膜（S120）。 聚合物膜被硬化（S130）。 在聚合物膜的前侧形成有金属层（S140）。 在金属层上形成第一透明导电膜（S150）。 在聚合物膜的后侧形成保护膜（S160）。 （附图标记）（AA）开始; （BB）结束; （S110）准备具有不平坦部分的框架; （S120）在旋涂工序的框架上形成聚合物膜; （S130）硬化聚合物膜; （S140）在聚合物膜的正面形成金属膜; （S150）在金属膜上形成第一透明导电膜; （S160）在聚合物膜的背面形成保护膜
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公开(公告)号：KR1020120079998A
公开(公告)日：2012-07-16
申请号：KR1020110001400
申请日：2011-01-06
Applicant: 성균관대학교산학협력단
Abstract: PURPOSE: A method for manufacturing a solar battery is provided to improve solar battery efficiency by using an AZO film as a back side electrode and a back side reflection film. CONSTITUTION: A crystalline silicon wafer layer(100) is composed of a crystalline silicon wafer doped to a P-type or an N-type. An amorphous silicon layer(200) is formed at the front side or the rear side of the crystalline silicon wafer layer. A passivation layer(300) is located between the crystalline silicon wafer layer and the amorphous silicon layer. A front electrode(400) is formed to the side in which sunlight is entered. A transparency conductive film layer(500) is formed to the opposite side in which the sunlight is entered.
Abstract translation: 目的：提供一种用于制造太阳能电池的方法，通过使用AZO膜作为背面电极和背面反射膜来提高太阳能电池的效率。 构成：晶体硅晶片层（100）由掺杂到P型或N型的晶体硅晶片组成。 在晶体硅晶片层的前侧或后侧形成非晶硅层（200）。 钝化层（300）位于晶体硅晶片层和非晶硅层之间。 在进入太阳光的一侧形成前电极（400）。 透明导电膜层（500）形成在进入太阳光的相对侧。
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公开(公告)号：KR1020120010518A
公开(公告)日：2012-02-03
申请号：KR1020100072107
申请日：2010-07-26
Applicant: 성균관대학교산학협력단
IPC: H01L31/0445 , H01L31/075 , H01L31/0216
CPC classification number: Y02E10/50 , H01L31/0445 , H01L31/0216 , H01L31/075
Abstract: PURPOSE: A thin film solar cell having micro rods with high aspect ratio and a preparation method thereof are provided to improve energy conversion efficiency due to an integrated thin film solar cell. CONSTITUTION: In a thin film solar cell having micro rods with high aspect ratio and a preparation method thereof, a plurality of microloads(110) are formed on a rear electrode(100). A plurality of microloads are perpendicularly on the rear electrode. The aspect ratio of the microload is over 10um. The diameter of the microload is over 150 um. The light absorption layer for a thin film solar cell is deposited in the micro load surface.
Abstract translation: 目的：提供一种具有高纵横比的微棒的薄膜太阳能电池及其制备方法，以提高由于集成的薄膜太阳能电池而导致的能量转换效率。 构成：在具有高纵横比的微棒的薄膜太阳能电池及其制备方法中，在后电极（100）上形成多个微负载（110）。 多个微负载垂直于后电极。 微载荷的长宽比大于10um。 微载荷的直径超过150um。 用于薄膜太阳能电池的光吸收层沉积在微负载表面中。
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公开(公告)号：KR1020110123464A
公开(公告)日：2011-11-15
申请号：KR1020100042964
申请日：2010-05-07
Applicant: 성균관대학교산학협력단
Abstract: PURPOSE: A method for improving electrical and optical properties of zinc oxide layer by using hydrogen peroxide is provided to improve quantum efficiency of solar battery by using an oxidation zinc thin film as a transparent conductive film of a solar battery. CONSTITUTION: A method for improving electrical and optical properties of zinc oxide layer by using hydrogen peroxide is as follows. An oxidation zinc thin film is dipped in the mixture of ultra-pure water and hydrogen peroxide and maintained. The oxidation zinc thin film is deposited on the top of a substrate and dipped in the mixture of ultra-pure water and hydrogen peroxide. Resistivity, transmittance and optical bandgap energy are improved. The oxidation zinc thin film is deposited on the top of the substrate as thickness of 900~1100nm. The oxidation zinc thin film is an aluminum doped oxidation zinc thin film. The oxidation zinc thin film, dipped in the mixture of the ultra-pure water and hydrogen peroxide, maintains in solution for 20~40 minutes.
Abstract translation: 目的：通过使用氧化锌薄膜作为太阳能电池的透明导电膜，提供了一种通过使用过氧化氢改善氧化锌层的电学和光学性能的方法，以提高太阳能电池的量子效率。 构成：通过使用过氧化氢改善氧化锌层的电学和光学性质的方法如下。 将氧化锌薄膜浸入超纯水和过氧化氢的混合物中并保持。 将氧化锌薄膜沉积在基材的顶部并浸渍在超纯水和过氧化氢的混合物中。 电阻率，透射率和光学带隙能量得到改善。 氧化锌薄膜沉积在基板的顶部，厚度为900〜1100nm。 氧化锌薄膜是掺铝氧化锌薄膜。 浸在超纯水和过氧化氢的混合物中的氧化锌薄膜在溶液中保持20〜40分钟。
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Patent Agency Ranking
公开(公告)号：KR101073487B1
公开(公告)日：2011-10-17
申请号：KR1020090134040
申请日：2009-12-30
Applicant: 성균관대학교산학협력단
IPC: H01L31/04
CPC classification number: Y02E10/50
Abstract: 본발명은광섬유레이저의과초점가공에의한일반형태양전지용실리콘기판앞면과뒷면그리고후면전극형태양전지의앞면전체및 뒷면일부의제조방법에관한것이며, 더욱구체적으로포토리소그래피방법을사용하여국부적패턴이형성된실리콘기판뒷면표면에나노다공성구조를형성하고이에국부적인 p-도핑을한 뒤전극물질을증착시킨다음열 산화막을선택적으로형성하여광섬유레이저의과초점가공법으로가공함으로써뒷면전극을형성하는방법에관한것이다. 태양전지용실리콘기판의앞면의경우반사도를감소시키며, 캐리어의수명을향상시킬수 있고뒷면의경우후면전계효과를주어개방전압을향상시키고, 패시베이션효과를높여광전변환효율을향상시킬수 있다. 또한같은방법으로후면전극형태양전지의뒷면전극영역을선택적이며국부적으로전극을형성함으로써광전효율향상을꾀할수 있는태양전지용실리콘기판의제조방법에관한것이다.
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公开(公告)号：KR1020110105514A
公开(公告)日：2011-09-27
申请号：KR1020100024691
申请日：2010-03-19
Applicant: 성균관대학교산학협력단
IPC: H01L31/04 , H01L31/0224
CPC classification number: Y02E10/50 , H01L31/04 , H01L31/0224
Abstract: 본 발명은 인 또는 붕소를 포함한 용액에 폴리에틸렌글리콜을 포함하는 블록공중합체를 혼합하여 제조된 도핑 페이스트 및 이를 사용하여 태양전지용 기판에 선택적 이미터를 형성하는 방법에 관한 것이다. 태양전지용 실리콘 기판에 본 발명의 도핑 페이스트를 사용하여 이미터를 형성하는 경우 폴리에틸렌글리콜을 포함하는 블록공중합체의 함량을 조절하여 점도를 조절하여 온도 차가 심한 계절적 변화 요인을 줄일 수 있고, 이미터 형성을 위한 재료를 상온에서 용이하게 제조할 수 있으며, 인이나 붕소 성분의 확산에 의한 도핑이 이루어져 PN 접합이 생성될 때 온도의 높낮이에 따라 확산 깊이나 농도가 결정되므로 온도와 도핑 페이스트의 농도에 따른 실리콘 기판의 개방 전압과 전류 밀도를 최적화할 수 있다.
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公开(公告)号：KR101062668B1
公开(公告)日：2011-09-06
申请号：KR1020090017162
申请日：2009-02-27
Applicant: 성균관대학교산학협력단
IPC: H01L21/268
Abstract: 본 발명은 실리콘에 도펀트를 도핑하는 방법에 관한 것으로, 본 발명에 의한 레이저와 흡수층을 이용한 도핑 방법은, 결정질 실리콘 기판에 비정질 실리콘-도펀트층을 증착하는 제1단계; 상기 비정질 실리콘-도펀트 막 위에 흡수층을 형성하는 제2단계; 및 상기 흡수층 위에서 레이저를 조사하는 제3단계를 포함하는 것을 특징으로 한다.
본 발명에 따르면, 흡수층을 증착한 뒤에 레이저 가공을 함으로써, 유지비가 낮고 효율이 뛰어난 광섬유레이저를 사용할 수 있고, 흡수층의 온도 상승으로 인해 에너지 효율이 높아 레이저의 출력 조절이 용이하며, 도핑을 위한 공정이 간단해지는 효과가 있다.
도핑, 태양전지, 후면 통합형 태양전지, 레이저, 광섬유레이저-
公开(公告)号：KR1020110077452A
公开(公告)日：2011-07-07
申请号：KR1020090134040
申请日：2009-12-30
Applicant: 성균관대학교산학협력단
IPC: H01L31/04
Abstract: PURPOSE: A method for manufacturing a silicon substrate for a solar cell using optical fiber laser is provided to reduce reflectance on the front of a silicon substrate for the solar cell and improve the lifetime of a carrier. CONSTITUTION: A target pattern is formed on a silicon substrate. After acid mixture is made by mixing HNO3 and HF, the diluted acid mixture is made by mixing the acid mixture with water. A nano porous structure is formed on a pattern by immersing the silicon substrate with the pattern in the diluted acid mixture. A thermal oxide layer is formed by sintering after p-type doping the nano porous structure on the surface of the silicon substrate. Only the oxide layer of a local pattern groove area is removed on the surface of the silicon substrate by a photolithography. An aluminum layer is deposited on the rear including the doped nano porous structure of the local pattern. After the aluminum layer is formed on the doped nano porous structure formed on the surface of the silicon substrate, a hyper focal process is performed with an optical fiber laser.
Abstract translation: 目的：提供一种使用光纤激光器制造太阳能电池用硅衬底的方法，以减少用于太阳能电池的硅衬底前部的反射率，并提高载体寿命。 构成：在硅衬底上形成目标图案。 通过混合HNO3和HF制成酸混合物后，通过将酸混合物与水混合来制备稀酸混合物。 通过将硅衬底浸渍在稀酸混合物中，在图案上形成纳米多孔结构。 通过在硅衬底的表面上p型掺杂纳米多孔结构之后通过烧结形成热氧化物层。 仅通过光刻法在硅衬底的表面上去除局部图案凹槽区域的氧化物层。 包括局部图案的掺杂纳米多孔结构在后面沉积铝层。 在形成在硅衬底表面上的掺杂纳米多孔结构上形成铝层之后，用光纤激光器进行超焦点处理。
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40.发明公开플라즈마 증착 기술을 이용한 나노결정 실리콘막 구조체, 그의 형성방법, 나노결정 실리콘막 구조체를 구비하는 비휘발성 메모리 소자 및 그의 형성방법 有权使用等离子体沉积技术的纳米晶体层，其方法，具有纳米晶体层的非易失性存储器件及其相关方法
公开(公告)号：KR1020100069791A
公开(公告)日：2010-06-25
申请号：KR1020080128318
申请日：2008-12-17
Applicant: 성균관대학교산학협력단
IPC: H01L21/8247 , H01L21/205
Abstract: PURPOSE: A nano crystal silicon layer structure using plasma deposition technology, a nonvolatile memory device including the same, and forming methods thereof are provided to reduce manufacturing processes of the nonvolatile memory device by directly depositing the nano crystal silicon layer on the glass substrate. CONSTITUTION: A gate electrode(55) is formed on a substrate(51). A multilayer insulation layer(63) is formed on a gate electrode. A first nano crystal silicon layer(65) is formed on the multilayer insulation layer using plasma deposition technology using gas containing hydrogen and silicon on the multilayer insulation layer. A metal electrode layer is formed on the first nano crystal silicon layer. A source electrode(69) and a drain electrode(71) are formed by patterning a metal electrode layer.
Abstract translation: 目的：提供使用等离子体沉积技术的纳米晶体硅层结构，包括其的非易失性存储器件及其形成方法，以通过将纳米晶硅层直接沉积在玻璃衬底上来减少非易失性存储器件的制造工艺。 构成：在基板（51）上形成栅电极（55）。 在栅电极上形成多层绝缘层（63）。 使用在多层绝缘层上使用含有氢和硅的气体的等离子体沉积技术，在多层绝缘层上形成第一纳米晶体硅层（65）。 金属电极层形成在第一纳米晶硅层上。 通过图案化金属电极层来形成源电极（69）和漏电极（71）。
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