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公开(公告)号：KR1020060064985A
公开(公告)日：2006-06-14
申请号：KR1020040103686
申请日：2004-12-09
Applicant: 한국전자통신연구원
IPC: H01L21/318 , H01L33/12 , H01S5/30
CPC classification number: H01L33/12 , H01L33/007 , H01L33/16 , H01L2933/0033
Abstract: 본 발명은 질화물 반도체의 제조방법에 관한 것으로, 보다 상세하게는 기판 상에 소정 두께의 Al
x O
y N
z (0≤x≤1, 0≤y≤1, 0≤z≤1) 완충층을 증착하는 단계와, 열처리를 수행한 후 소정 두께의 단결정 반도체층을 성장하는 단계를 포함함으로써, 종래의 저온 GaN 및 AlN 층을 이용한 성장법에 비해 ALE로 성장된 완충층의 조성 및 밀도 제어를 통하여 기판과의 격자 부정합 및 열팽창계수 차이를 감소시켜 질화물 반도체의 특성을 높일 수 있는 효과가 있다.
질화물 반도체, 사파이어 기판, 원자층 에피택시(ALE), 유기금속 화학기상증착법(MOCVD), 완충층, 단결정 반도체층-
公开(公告)号：KR102152195B1
公开(公告)日：2020-09-07
申请号：KR1020160095728
申请日：2016-07-27
Applicant: 한국전자통신연구원
IPC: H01L29/778 , H01L33/00 , H01L29/861 , H01L21/02 , H01L21/8234 , H01L21/768
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公开(公告)号：KR101758082B1
公开(公告)日：2017-07-17
申请号：KR1020130166516
申请日：2013-12-30
Applicant: 한국전자통신연구원
IPC: H01L29/66 , H01L29/47 , H01L21/02 , H01L21/283 , H01L21/321 , H01L29/20 , H01L29/778
CPC classification number: H01L21/3212 , H01L21/0254 , H01L21/283 , H01L21/28575 , H01L21/28581 , H01L29/2003 , H01L29/41766 , H01L29/452 , H01L29/66462 , H01L29/7786
Abstract: 본발명의질화물반도체소자의제조방법에관한것으로제 1 및제 2 질화물반도체층들이차례로적층된성장기판상에복수의전극들을형성하는것, 상기각각의전극들상에상부금속층들을형성하는것, 상기성장기판을제거하여상기제 1 질화물반도체층의하면을노출하는것 및상기노출된제 1 질화물반도체층의하면상에제 3 질화물반도체층및 하부금속층을차례로형성하는것을포함하는질화물반도체소자의제조방법이제공된다.
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公开(公告)号：KR1020160119324A
公开(公告)日：2016-10-13
申请号：KR1020150046979
申请日：2015-04-02
Applicant: 한국전자통신연구원
IPC: H01L33/00 , H01L21/205
Abstract: 본발명은상시불통형(normally-off) 질화물반도체소자를제공하기위한것이다. 특히, 본발명은기판표면에패턴된 유전체마스크를이용한선택성장방법을통해기존의건식식각공정을대체하는질화물반도체소자구조및 그제조방법을제공하기위한것이다. 이를위한, 본발명은제1 질화물층을사파이어기판에증착하는단계, 유전체마스크를상기제1 질화물층에패터닝하는단계상기유전체마스크상층에제2 질화물을패터닝하는단계및 상기제2 질화물을유기금속기상성장법을이용하여선택성장시키는단계를포함하는질화물반도체소자구조및 그제조방법에관한것이다.
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公开(公告)号：KR1020140102384A
公开(公告)日：2014-08-22
申请号：KR1020130015412
申请日：2013-02-13
Applicant: 한국전자통신연구원
CPC classification number: H01L21/0254 , H01L21/02381 , H01L21/0242 , H01L21/02458 , H01L21/02494 , H01L21/02505 , H01L21/0262 , H01L29/2003
Abstract: The present invention relates to an AlGaN template, a method of manufacturing the same, and a structure thereof. A method of manufacturing an AlGaN template according to one embodiment of the present invention includes a step of forming an AlN layer on a substrate; a step of forming a second AlyGa1-yN layer on a first AlxGa1-xN layer; and a step of forming a third AlzGa1-zN layer on the second AlyGa1-yN layer.
Abstract translation: 本发明涉及一种AlGaN模板，其制造方法及其结构。 根据本发明的一个实施方案的制造AlGaN模板的方法包括在衬底上形成AlN层的步骤; 在第一Al x Ga 1-x N层上形成第二Al y Ga 1-y N层的步骤; 以及在第二Al y Ga 1-y N层上形成第三Al z Ga 1-z N层的步骤。
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Patent Agency Ranking
公开(公告)号：KR1020130037625A
公开(公告)日：2013-04-16
申请号：KR1020120023634
申请日：2012-03-07
Applicant: 한국전자통신연구원
CPC classification number: H01L33/22 , H01L33/0079 , H01L33/06 , H01L33/12 , H01L33/32 , H01L2933/0091
Abstract: PURPOSE: A light emitting diode and a manufacturing method are provided to prevent the total reflection of the light generated from a light emitting layer by forming a buffer layer including a recess pattern on a light emitting layer, thereby improving optical extraction efficiency. CONSTITUTION: A light emitting layer(110) is formed on a first electrode layer(109). A second electrode layer(113) is formed on the light emitting layer. A buffer layer(108) having a recess pattern(106) is formed. The recess pattern increases the optical extraction efficiency of the light generated from the light emitting layer. The first and the second electrode layer include n-type gallium nitride and p-type gallium nitride. The buffer layer includes anti-polarity gallium nitride.
Abstract translation: 目的：提供一种发光二极管及其制造方法，通过在发光层上形成包含凹凸图案的缓冲层，防止发光层产生的光的全反射，从而提高光提取效率。 构成：在第一电极层（109）上形成发光层（110）。 在发光层上形成第二电极层（113）。 形成具有凹部图案（106）的缓冲层（108）。 凹槽图案增加了从发光层产生的光的光学提取效率。 第一和第二电极层包括n型氮化镓和p型氮化镓。 缓冲层包括反极性氮化镓。
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公开(公告)号：KR1020130031776A
公开(公告)日：2013-03-29
申请号：KR1020120077726
申请日：2012-07-17
Applicant: 한국전자통신연구원
IPC: H01L29/78 , H01L21/336
CPC classification number: H01L29/7783 , H01L29/2003 , H01L29/402 , H01L29/404 , H01L29/66462
Abstract: PURPOSE: A power semiconductor device and a fabrication method thereof are provided to increase the break down voltage. CONSTITUTION: A source electrode(303) and a drain electrode(305) are formed on a substrate(301). A dielectric layer(307) is formed between the source electrode and the drain electrode. A field plate(311) is formed on the dielectric layer. A metal connects the field plate to the source electrode.
Abstract translation: 目的：提供功率半导体器件及其制造方法以增加击穿电压。 构成：在基板（301）上形成源电极（303）和漏电极（305）。 在源电极和漏电极之间形成电介质层（307）。 在电介质层上形成场板（311）。 金属将场板连接到源电极。
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公开(公告)号：KR1020120128398A
公开(公告)日：2012-11-27
申请号：KR1020110046309
申请日：2011-05-17
Applicant: 한국전자통신연구원
Inventor： 배성범
CPC classification number: H01L33/387 , H01L33/42 , H01L21/0254 , H01L33/145 , H01L2933/0016
Abstract: PURPOSE: A gallium-nitride light emitting device of a microarray structure and a manufacturing method thereof are provided to prevent surface damage by an etching process using a transparent electrode layer for forming and connecting a micro light emitting region by dividing the transparent electrode layer into first and second transparent electrode layers. CONSTITUTION: A low temperature buffer layer(102) is formed on a sapphire substrate(101). An n-type electrode layer(104) is formed on the low temperature buffer layer. An active layer(105) is formed on the n-type electrode layer. A p-type electrode layer(107) is formed on the active layer. A first transparent electrode layer(108) is formed on the p-type electrode layer. A second transparent electrode layer(111) is formed on the first transparent electrode layer.
Abstract translation: 目的：提供一种微阵列结构的氮化镓发光器件及其制造方法，以通过使用透明电极层的蚀刻工艺来防止表面损伤，所述透明电极层用于通过将透明电极层分成第一部分形成和连接微发光区域 和第二透明电极层。 构成：在蓝宝石衬底（101）上形成低温缓冲层（102）。 在低温缓冲层上形成n型电极层（104）。 在n型电极层上形成有源层（105）。 在有源层上形成p型电极层（107）。 第一透明电极层（108）形成在p型电极层上。 在第一透明电极层上形成第二透明电极层（111）。
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公开(公告)号：KR1020120124171A
公开(公告)日：2012-11-13
申请号：KR1020110041888
申请日：2011-05-03
Applicant: 한국전자통신연구원
CPC classification number: H01L2224/48091 , H01L2924/00014
Abstract: PURPOSE: A light emitting diode apparatus for output and light emission efficiency is provided to improve efficiency of the treatment of a skin ailment by enhancing the density of optical power per unit area by optimizing the number of usable LED chip per unit area. CONSTITUTION: A metal heat dissipating plate(100) is comprised of a metal plate of aluminum material. A heat dissipation insulator(200) electrically insulates the metal heat dissipating plate and a metal pad(300). The heat dissipation insulator easily transfers heat generated in an LED chip(400) to the metal heat dissipating plate. The LED chip is attached on a center part of the metal pad using die adhesive(250). The metal pad is connected to the LED chip through a bonding wire(350). [Reference numerals] (100) Metal heat dissipating plate; (200) Heat dissipation insulator; (250) Die adhesive; (300) Metal pad; (350) Bonding wire; (400) Chip
Abstract translation: 目的：提供一种用于输出和发光效率的发光二极管装置，通过优化每单位面积的可用LED芯片的数量，通过增加每单位面积光功率的密度来提高皮肤疾病的治疗效率。 构成：金属散热板（100）由铝材料的金属板构成。 散热绝缘体（200）使金属散热板和金属垫（300）电绝缘。 散热绝缘体容易将在LED芯片（400）中产生的热量传递到金属散热板。 LED芯片使用模具粘合剂（250）附接在金属垫的中心部分上。 金属焊盘通过接合线（350）连接到LED芯片。 （附图标记）（100）金属散热板; （200）散热绝缘子; （250）模具胶; （300）金属垫; （350）接合线; （400）芯片
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公开(公告)号：KR1020120021816A
公开(公告)日：2012-03-09
申请号：KR1020100079781
申请日：2010-08-18
Applicant: 한국전자통신연구원
IPC: A61N5/06
Abstract: PURPOSE: A skin care apparatus based on a light emitting diode is provided to improve dermatoses treatment efficiency by using complex light source. CONSTITUTION: A skin care apparatus based on a light emitting diode comprises a light source unit(110) and a system controller(120) controlling the light source unit. The light source unit is equipped with a first wavelength group LED chip, a multi-wavelength LED array module, and a plurality of second wavelength group LED chips. A driver circuit drives an LED array module.
Abstract translation: 目的：提供一种基于发光二极管的皮肤护理装置，通过复杂光源提高皮肤病治疗效率。 构成：基于发光二极管的护肤装置包括光源单元（110）和控制光源单元的系统控制器（120）。 光源单元配备有第一波长组LED芯片，多波长LED阵列模块和多个第二波长组LED芯片。 驱动电路驱动LED阵列模块。
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