公开(公告)号：US11430934B2

公开(公告)日：2022-08-30

申请号：US16985945

申请日：2020-08-05

Applicant: EPISTAR CORPORATION

Inventor： Li-Ming Chang ,  Tzung-Shiun Yeh ,  Chien-Fu Shen ,  Yu-Rui Lin ,  Chen Ou ,  Hsin-Ying Wang ,  Hui-Chun Yeh

IPC: H01L33/62 ,  H01L33/20 ,  H01L33/06 ,  H01L33/30 ,  F21Y115/10 ,  H01L33/22 ,  H01L23/60 ,  F21K9/232 ,  H01L33/32 ,  H01L33/00 ,  H01L33/38 ,  H01L33/14

Abstract: A light-emitting device includes: a substrate, including a first edge, a second edge, a third edge and a fourth edge; a semiconductor stack formed on the substrate, comprising a first semiconductor layer, a second semiconductor layer and an active layer; a first electrode formed on the first semiconductor layer, comprising a first pad electrode; and a second electrode formed on the second semiconductor layer, comprising a second pad electrode and a second finger electrode; wherein in a top view, the first pad electrode is adjacent to a corner of the substrate that is intersected by the first and the second edges; the second finger electrode is not parallel with the third and the first edges; and a distance between the second finger electrode and the first edge increases along a direction from an end of the second finger electrode that connects the second pad electrode toward the second edge.

公开(公告)号：US10529895B2

公开(公告)日：2020-01-07

申请号：US15839160

申请日：2017-12-12

Applicant: EPISTAR CORPORATION

Inventor： Tsun-Kai Ko ,  Schang-Jing Hon ,  Chien-Kai Chung ,  Hui-Chun Yeh ,  An-Ju Lin ,  Chien-Fu Shen ,  Chen Ou

IPC: H01L33/06 ,  H01L33/14 ,  H01L33/22 ,  H01L33/38 ,  H01L33/42 ,  H01L33/44

Abstract: An optoelectronic semiconductor device comprises a substrate; a semiconductor system including a first conductivity layer and a second conductivity layer, wherein the second conductivity layer comprises a top surface, and in a top view of the semiconductor system, an outline of the first conductivity layer surrounds an outline of the second conductivity layer; a first electrical connector on the first conductivity layer; a second electrical connector comprising a top view shape and directly contacting the second conductivity layer; a contact layer contacting the top surface of the second conductivity layer and having an outer perimeter at an inner side of the outline of the second conductivity layer in the top view of the semiconductor system; and a discontinuous region contacting the top surface of the second conductivity layer, wherein the contact layer covers a top surface and sidewalls of the discontinuous region.

公开(公告)号：US10522715B2

公开(公告)日：2019-12-31

申请号：US16214667

申请日：2018-12-10

Applicant: EPISTAR CORPORATION

Inventor： Chen Ou ,  Chiu-Lin Yao

IPC: H01L33/20 ,  H01L33/22 ,  H01L33/24 ,  H01L33/12 ,  H01L33/30 ,  H01L33/32

Abstract: A light-emitting device comprises a substrate having a top surface and a plurality of patterned units protruding from the top surface; and a light-emitting stack formed on the substrate and having an active layer with a first surface substantially parallel to the top surface, wherein one of the plurality of patterned units comprises a plurality of connecting sides constituting a first polygon shape in a top view of the light-emitting device, wherein the one of the plurality of patterned units comprises a vertex and a plurality of inclined surfaces respectively extending from the plurality of connecting sides, the plurality of inclined surfaces commonly joining at the vertex in a cross-sectional view of the light-emitting device, the vertex being between the top surface of the substrate and the first surface of the active layer, and the plurality of inclined surfaces comprises a second polygon shape in the cross-sectional view of the light-emitting device.

公开(公告)号：US10181549B2

公开(公告)日：2019-01-15

申请号：US15821147

申请日：2017-11-22

Applicant: EPISTAR CORPORATION

Inventor： Chen Ou ,  Chiu-Lin Yao

IPC: H01L33/20 ,  H01L33/12 ,  H01L33/32 ,  H01L33/24 ,  H01L33/22 ,  H01L33/30

Abstract: A light-emitting device comprises a substrate having a top surface and a plurality of patterned units protruding from the top surface; and a light-emitting stack formed on the substrate and having an active layer with a first surface substantially parallel to the top surface, wherein one of the plurality of patterned units comprises a plurality of connecting sides constituting a first polygon shape in a top view of the light-emitting device, wherein the one of the plurality of patterned units comprises a vertex and a plurality of inclined surfaces respectively extending from the plurality of connecting sides, the plurality of inclined surfaces commonly joining at the vertex in a cross-sectional view of the light-emitting device, the vertex being between the top surface of the substrate and the first surface of the active layer, and the plurality of inclined surfaces comprises a second polygon shape in the cross-sectional view of the light-emitting device.

公开(公告)号：US10134947B2

公开(公告)日：2018-11-20

申请号：US15872202

申请日：2018-01-16

Applicant: EPISTAR CORPORATION

Inventor： Chia Chen Tsai ,  Chen Ou ,  Chi Ling Lee ,  Chi Shiang Hsu

IPC: H01L23/02 ,  H01L33/00 ,  H01L33/62 ,  H01L33/02 ,  H01L33/22 ,  H01L33/20 ,  H01L21/784 ,  H01L21/78

Abstract: A compound semiconductor device includes a substrate, including a top surface, a bottom surface, a side surface connecting the top surface and the bottom surface; and a semiconductor stack formed on the top surface, wherein the side surface includes a first deteriorated surface, a second deteriorated surface, a first crack surface between the first and second deteriorated surfaces, a second crack surface between the first deteriorated surface and the top surface, and a third crack surface between the second deteriorated surface and the bottom surface, wherein a convex region or a concave region is formed by the first deteriorated surface, the first crack surface and the second crack surface, or the second deteriorated surface, the first crack surface and the third crack surface; and wherein the second crack surface or the third crack surface is substantially perpendicular to the top surface or the bottom surface.

公开(公告)号：US09559259B2

公开(公告)日：2017-01-31

申请号：US14874077

申请日：2015-10-02

Applicant: EPISTAR CORPORATION

Inventor： Yi Lin Guo ,  Chen Ou ,  Chi Ling Lee ,  Wei Han Wang ,  Hung Chih Yang ,  Chi Hung Wu

IPC: H01L33/00 ,  H01L33/22

CPC classification number: H01L33/22 ,  H01L33/0095

Abstract: An LED manufacturing method includes steps of: providing a substrate including a first surface; forming a first portion of a first semiconductor layer on the first surface in a first atmosphere including a first carrier gas; and forming a second portion of the first semiconductor layer on the first portion in a second atmosphere including a second carrier gas; wherein a plurality of first cavities is formed on a surface of the first portion during forming the first portion; and wherein the plurality of first cavities is transformed to a plurality of second cavities during forming the second portion, and one of the second cavities includes a first inclined surface and a second inclined surface above the first inclined surface.

Abstract translation: LED制造方法包括以下步骤：提供包括第一表面的基板; 在包括第一载气的第一气氛中，在所述第一表面上形成第一半导体层的第一部分; 以及在包括第二载气的第二气氛中在所述第一部分上形成所述第一半导体层的第二部分; 其中在形成所述第一部分期间，在所述第一部分的表面上形成多个第一空腔; 并且其中所述多个第一空腔在形成所述第二部分期间被变换为多个第二空腔，并且所述第二空腔中的一个包括第一倾斜表面和位于所述第一倾斜表面上方的第二倾斜表面。

公开(公告)号：US09112101B2

公开(公告)日：2015-08-18

申请号：US13870008

申请日：2013-04-25

Applicant: EPISTAR CORPORATION

Inventor： Yi-Lin Guo ,  Chen Ou ,  Chi-Ling Lee ,  Wei-Han Wang ,  Hui-Tang Shen ,  Chi-Hung Wu ,  Hung-Chih Yang

IPC: H01L33/00 ,  H01L21/76 ,  H01L33/32 ,  H01L33/22 ,  H01L33/12

CPC classification number: H01L33/22 ,  H01L33/0079 ,  H01L33/12

Abstract: A method for manufacturing a light-emitting device, comprises steps of: providing an as-cut wafer having an irregularly uneven surface comprising surface roughness greater than 0.5 μm; and forming a light-emitting stack on the irregularly uneven surface of the as-cut wafer by an epitaxial growth method, and the light-emitting stack comprises an upper surface having surface roughness less than 0.2 nm; wherein there is no patterning or roughing process after the step of providing the as-cut wafer and before the step of forming the light-emitting stack on the irregularly uneven surface of the as-cut wafer.

Abstract translation: 一种制造发光器件的方法，包括以下步骤：提供具有大于0.5μm的表面粗糙度的不规则凹凸表面的切割晶片; 并且通过外延生长方法在所述切割晶片的不规则凹凸表面上形成发光叠层，并且所述发光叠层包括表面粗糙度小于0.2nm的上表面; 其中在提供切割晶片的步骤之后和在切割晶片的不规则凹凸表面上形成发光叠层的步骤之前没有图案化或粗加工工艺。

公开(公告)号：US20150137167A1

公开(公告)日：2015-05-21

申请号：US14589683

申请日：2015-01-05

Applicant: Epistar Corporation

Inventor： Tzu-Chieh Hsu ,  Ching-San Tao ,  Chen Ou ,  Min-Hsun Hsieh ,  Chao-Hsing Chen

IPC: H01L33/24 ,  H01L33/46 ,  H01L33/60

CPC classification number: H01L33/105 ,  H01L33/10 ,  H01L33/22 ,  H01L33/382 ,  H01L33/405 ,  H01L33/42

Abstract: A light-emitting device, comprises a light-emitting stacked layer comprising a first conductivity type semiconductor layer; a light-emitting layer formed on the first conductivity type semiconductor layer; and a second conductivity type semiconductor layer formed on the light-emitting layer and comprising a first plurality of cavities; a first planarization layer formed on a first part of the second conductivity type semiconductor layer; a first transparent conductive oxide layer formed on the first planarization layer and on a second part of the second conductivity type semiconductor layer, the first transparent conductive oxide layer including a first portion in contact with the first planarization layer and including a second portion in contact with the upper surface of the second conductivity type semiconductor layer; a first electrode formed on the first portion; and a first reflective metal layer formed between the first transparent conductive oxide layer and the first electrode.

Abstract translation: 一种发光器件，包括：包含第一导电类型半导体层的发光层叠层; 形成在所述第一导电型半导体层上的发光层; 以及形成在所述发光层上并且包括第一多个空腔的第二导电类型半导体层; 形成在所述第二导电类型半导体层的第一部分上的第一平坦化层; 第一透明导电氧化物层，其形成在所述第一平坦化层上和所述第二导电类型半导体层的第二部分上，所述第一透明导电氧化物层包括与所述第一平坦化层接触的第一部分， 第二导电型半导体层的上表面; 形成在所述第一部分上的第一电极; 以及形成在第一透明导电氧化物层和第一电极之间的第一反射金属层。

公开(公告)号：US20140183581A1

公开(公告)日：2014-07-03

申请号：US13731887

申请日：2012-12-31

Applicant: EPISTAR CORPORATION

Inventor： Chi Hung Wu ,  Chen Ou ,  Chi Ling LEE ,  Wei Han WANG ,  Hui Tang SHEN ,  Yi Lin GUO ,  Hung Chih YANG

IPC: H01L33/22

CPC classification number: H01L33/22 ,  H01L33/0095

Abstract: A light-emitting device comprises a substrate; a first semiconductor layer formed on the substrate; a light-emitting layer on the first semiconductor layer; and a second semiconductor layer having a rough surface formed on the light-emitting layer, wherein the rough surface comprises a plurality of cavities randomly distributed on the rough surface, and one of the plurality of cavities has a substantially hexagonal shape viewed from top and a curved sidewall viewed from cross-section.

Abstract translation: 发光装置包括基板; 形成在所述基板上的第一半导体层; 在所述第一半导体层上的发光层; 以及第二半导体层，其具有形成在所述发光层上的粗糙表面，其中所述粗糙表面包括随机分布在所述粗糙表面上的多个空腔，并且所述多个空腔中的一个具有从顶部观察的大致六边形形状， 从横截面看弯曲的侧壁。

公开(公告)号：USD1062026S1

公开(公告)日：2025-02-11

申请号：US29858208

申请日：2022-10-28

Applicant: EPISTAR CORPORATION

Designer： Hui-Fang Kao ,  Yao-Ning Chan ,  Yi-Tang Lai ,  Yun-Chung Chou ,  Shih-Chang Lee ,  Chen Ou