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    LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF
    31.
    发明申请
    LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开

    公开(公告)号：US20170271548A1

    公开(公告)日：2017-09-21

    申请号：US15609795

    申请日：2017-05-31

    Applicant: EPISTAR CORPORATION

    Inventor： Chien-Fu HUANG ,  Chih-Chiang LU ,  Chun-Yu LIN ,  Hsin-Chih CHIU

    IPC: H01L33/02 ,  H01L25/075 ,  H01L33/62 ,  H01L21/66

    Abstract: The present disclosure provides a method for manufacturing a light-emitting device, comprising: providing a first substrate; providing a semiconductor stack on the first substrate, the semiconductor stack comprising a first conductive type semiconductor layer, a light-emitting layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the light-emitting layer, wherein the semiconductor stack comprises a plurality of blocks of semiconductor stack separated from each other, and wherein the plurality of blocks of semiconductor stack comprise a first block of semiconductor stack and a second block of semiconductor stack; performing a separating step to separate the first block of semiconductor stack from the first substrate, and the second block of semiconductor stack remained on the first substrate; providing a permanent substrate comprising a first surface, a second surface, and a third block of semiconductor stack on the first surface; and bonding one of the first block of semiconductor stack and the second block of semiconductor stack to the second surface of the permanent substrate; wherein the third block of semiconductor stack is separated from the first substrate, and one of the first block of semiconductor stack and the second block of semiconductor stack which is bonded to the permanent substrate and the third block of the semiconductor stack comprise different optical characteristic value or an electrical characteristic value.

    METHOD OF SELECTIVELY TRANSFERRING SEMICONDUCTOR DEVICE
    32.
    发明申请
    METHOD OF SELECTIVELY TRANSFERRING SEMICONDUCTOR DEVICE 有权
    选择性传输半导体器件的方法

    公开(公告)号：US20160163917A1

    公开(公告)日：2016-06-09

    申请号：US14908886

    申请日：2013-07-29

    Applicant: EPISTAR CORPORATION

    Inventor： Chih-Chiang LU ,  Yi-Ming CHEN ,  Chun-Yu LIN ,  Ching-Pei LIN ,  Chung-Hsun CHIEN ,  Chien-Fu HUANG ,  Hao-Min KU ,  Min-Hsun HSIEH ,  Tzu-Chieh HSU

    IPC: H01L33/00 ,  H01L33/62 ,  H01L21/683

    CPC classification number: H01L33/0079 ,  H01L21/6835 ,  H01L21/6836 ,  H01L33/0095 ,  H01L33/62 ,  H01L2221/68318 ,  H01L2221/68363 ,  H01L2221/68381 ,  H01L2933/0066

    Abstract: A method of selectively transferring semiconductor devices comprises the steps of providing a substrate having a first surface and a second surface; providing a plurality of semiconductor epitaxial stacks on the first surface, wherein each of the plurality of semiconductor epitaxial stacks comprises a first semiconductor epitaxial stack and a second semiconductor epitaxial stack, and the first semiconductor epitaxial stack is apart from the second semiconductor epitaxial stack, and wherein a adhesion between the first semiconductor epitaxial stack and the substrate is different from a adhesion between the second semiconductor epitaxial stack and the substrate; and selectively separating the first semiconductor epitaxial stack or the second semiconductor epitaxial stack from the substrate.

    Abstract translation: 选择性地转移半导体器件的方法包括提供具有第一表面和第二表面的衬底的步骤; 在所述第一表面上提供多个半导体外延堆叠，其中所述多个半导体外延堆叠中的每一个包括第一半导体外延堆叠和第二半导体外延堆叠，并且所述第一半导体外延堆叠体与所述第二半导体外延堆叠体分离，以及 其中所述第一半导体外延叠层和所述基板之间的粘合不同于所述第二半导体外延叠层和所述基板之间的粘附; 以及从衬底选择性地分离第一半导体外延层或第二半导体外延层。

    METHOD AND APPARATUS FOR TESTING LIGHT-EMITTING DEVICE
    34.
    发明申请
    METHOD AND APPARATUS FOR TESTING LIGHT-EMITTING DEVICE 有权
    用于测试发光装置的方法和装置

    公开(公告)号：US20140167771A1

    公开(公告)日：2014-06-19

    申请号：US14187194

    申请日：2014-02-21

    Applicant: EPISTAR CORPORATION

    Inventor： Chia-Liang HSU ,  Chih-Chiang LU

    IPC: G01R31/308 ,  G01R31/44

    CPC classification number: G01R31/308 ,  G01J1/42 ,  G01J2001/4252 ,  G01R31/2635 ,  G01R31/44

    Abstract: Disclosed is a method for testing a light-emitting device comprising the steps of: providing a light-emitting device comprising a plurality of light-emitting diodes; driving the plurality of the light-emitting diodes with a current; generating an image of the light-emitting device; and determining a luminous intensity of each of the light-emitting diodes; wherein the magnitude of the current is determined such that the current density driving each of the light-emitting diodes is smaller than or equal to 300 mA/mm2.

    Abstract translation: 公开了一种用于测试发光器件的方法，包括以下步骤：提供包括多个发光二极管的发光器件; 用电流驱动多个发光二极管; 产生发光装置的图像; 以及确定每个所述发光二极管的发光强度; 其中确定电流的大小使得驱动每个发光二极管的电流密度小于或等于300mA / mm2。

    LIGHT-EMITTING DEVICE WITH NARROW DOMINANT WAVELENGTH DISTRIBUTION AND METHOD OF MAKING THE SAME
    35.
    发明申请
    LIGHT-EMITTING DEVICE WITH NARROW DOMINANT WAVELENGTH DISTRIBUTION AND METHOD OF MAKING THE SAME 审中-公开
    具有多个主要波长分布的发光装置及其制造方法

    公开(公告)号：US20140048833A1

    公开(公告)日：2014-02-20

    申请号：US14062154

    申请日：2013-10-24

    Applicant: Epistar Corporation

    Inventor： Chih-Chiang LU ,  Shu-Ting HSU ,  Yen-Wen CHEN ,  Chien-Yuan WANG ,  Ru-Shi LIU ,  Min-Hsun HSIEH

    IPC: H01L33/50

    CPC classification number: H01L33/504 ,  H01L27/156 ,  H01L33/44 ,  H01L33/508 ,  H01L2224/18

    Abstract: This application discloses a light-emitting device with narrow dominant wavelength distribution and a method of making the same. The light-emitting device with narrow dominant wavelength distribution at least includes a substrate, a plurality of light-emitting stacked layers on the substrate, and a plurality of wavelength transforming layers on the light-emitting stacked layers, wherein the light-emitting stacked layer emits a first light with a first dominant wavelength variation; the wavelength transforming layer absorbs the first light and converts the first light into the second light with a second dominant wavelength variation; and the first dominant wavelength variation is larger than the second dominant wavelength variation.

    Abstract translation: 本申请公开了一种具有窄波长分布的发光器件及其制造方法。 具有窄主波长分布的发光器件至少包括衬底，在衬底上的多个发光层叠层和发光层叠层上的多个波长转换层，其中发光层叠层 发射具有第一主波长变化的第一光; 波长转换层吸收第一光并将第一光转换成具有第二主波长变化的第二光; 并且第一主波长变化大于第二主波长变化。

    LIGHT-EMITTING DEVICE
    36.
    发明申请
    LIGHT-EMITTING DEVICE 有权

    公开(公告)号：US20210367098A1

    公开(公告)日：2021-11-25

    申请号：US17397388

    申请日：2021-08-09

    Applicant: EPISTAR CORPORATION

    Inventor： Chien-Fu HUANG ,  Chih-Chiang LU ,  Chun-Yu LIN ,  Hsin-Chih CHIU

    IPC: H01L33/02 ,  H01L21/66 ,  H01L33/62 ,  H01L25/075 ,  H01L23/00

    Abstract: The present disclosure provides a light-emitting device comprising a substrate with a topmost surface; a first semiconductor stack arranged on the substrate, and comprising a first top surface separated from the topmost surface by a first distance; a first bonding layer arranged between the substrate and the first semiconductor stack; a second semiconductor stack arranged on the substrate, and comprising a second top surface separated from the topmost surface by a second distance which is different form the first distance; a second bonding layer arranged between the substrate and the second semiconductor stack; a third semiconductor stack arranged on the substrate, and comprising third top surface separated from the topmost surface by a third distance; and a third bonding layer arranged between the substrate and the third semiconductor stack; wherein the first semiconductor stack, the second semiconductor stack, and the third semiconductor stack are configured to emit different color lights.

    SEMICONDUCTOR DEVICE
    37.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20190081213A1

    公开(公告)日：2019-03-14

    申请号：US16128604

    申请日：2018-09-12

    Applicant: EPISTAR CORPORATION

    Inventor： Yung-Fu CHANG ,  Hsin-Chan CHUNG ,  Hung-Ta CHENG ,  Wen-Luh LIAO ,  Shih-Chang LEE ,  Chih-Chiang LU ,  Yi-Ming CHEN ,  Yao-Ning CHAN ,  Chun-Fu TSAI

    IPC: H01L33/38 ,  H01L33/30

    CPC classification number: H01L33/38 ,  H01L33/30

    Abstract: A semiconductor device includes a semiconductor stack comprising a surface, and an electrode structure comprises an electrode pad formed on the surface, and the electrode structure further comprises a first extending electrode, a second extending electrode and a third extending electrode connecting to the electrode pad. The first extending electrode is closer to a periphery of the surface than the third extending electrode is, and the second extending electrode is between the first extending electrode and the third extending electrode. From a top view of the semiconductor device, the first extending electrode, the second extending electrode and the third extending electrode respectively include a first curve having a first angle θ1, a second curve having a second angle θ2 and a third curve having a third angle θ3, wherein θ3>θ2>θ1 ∘

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