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公开(公告)号：DE69012555T2
公开(公告)日：1995-04-06
申请号：DE69012555
申请日：1990-07-25
Applicant: IBM
Inventor： BAYER THOMAS , GRESCHNER JOHANN DR
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公开(公告)号：DE3886754D1
公开(公告)日：1994-02-10
申请号：DE3886754
申请日：1988-10-19
Applicant: IBM DEUTSCHLAND
Inventor： BAYER THOMAS , BARTHA JOHANN DR , GRESCHNER JOHANN DR , KERN DIETER , MATTERN VOLKER , STOEHR ROLAND
IPC: C08J7/00 , C23F4/00 , H01L21/00 , H01L21/302 , H01L21/3065 , H01J37/20
Abstract: The invention relates to a vacuum reactor for etching thermally poorly conducting substrates with a high etching rate uniformity, in which the substrates (33) to be etched are arranged in a holder (35, 36) at a specific distance from the cathode (31) to which RF energy is applied. In an advantageous embodiment of the invention, the cathode is raised in the region of the substrate (33) to be etched and brought up to the underside of the substrate as far as a distance of approximately 0.2 mm. The cathode consists of aluminium, and is provided in the region of the substrate to be etched with a layer (32) acting as a complete radiator. The heat formed during the RIE is dissipated by thermal radiation, and the radiation reflected back onto the substrates from the cathode is absorbed by the layer (32). The invention also comprises a process for etching thermally poorly conducting substrates, in particular for etching plastic substrates.
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公开(公告)号：DE3786549D1
公开(公告)日：1993-08-19
申请号：DE3786549
申请日：1987-03-27
Applicant: IBM DEUTSCHLAND
Inventor： BARTHA JOHANN DR , BAYER THOMAS , GRESCHNER JOHANN DR , WITTLINGER JUERGEN
IPC: H01L21/302 , B26F1/28 , G03F1/20 , G03F7/00 , G03F7/12 , G03F7/40 , H01L21/3065 , H01L21/48 , H05K1/00 , H05K1/03 , H05K3/00 , H05K3/42 , G03F1/00 , H01L21/66
Abstract: Micromechanical components of any shape are made from plane parallel polymer panels or through holes of any shape are made in these by: (A) producing a mask by: (a) applying a 2-10 micron thick photoresist coating to both sides of a polymer substrate; (b) producing the required pattern by simultaneous selective exposure of both front and back photoresist coatings, so that the masks are aligned with an accuracy of ca. +/- 1-2 microns; and (c) developing and, if necessary, post-curing the photoresist coatings; (B) producing the components or through-holes by reactive ion etching (RIE) from the front and then the back, each to a depth up to ca. 2/3 of the substrate thickness, using an oxygen plasma with a pressure of 1-50 microbar; and (C) stripping the photoresist masks from the front and back of the substrate.
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公开(公告)号：DE68903951T2
公开(公告)日：1993-07-08
申请号：DE68903951
申请日：1989-08-16
Applicant: IBM
Inventor： GRESCHNER JOHANN DR DIPL PHYS , BAYER THOMAS , KRAUS GEORG , WOLTER OLAF DR DIPL PHYS , WEISS HELGA
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公开(公告)号：DE68903950D1
公开(公告)日：1993-01-28
申请号：DE68903950
申请日：1989-08-16
Applicant: IBM
Inventor： BAYER THOMAS , GRESCHNER JOHANN DR DIPL PHYS , WEISS HELGA , WOLTER OLAF DR DIPL PHYS , WICKRAMASINGHE DIPL-PHYS DR , MARTIN DIPL-PHYS DR
IPC: G01B7/34 , G01B21/30 , G01N27/00 , G01Q10/04 , G01Q60/04 , G01Q60/16 , G01Q60/38 , G01Q70/10 , H01J37/28 , H01L21/00 , H01L21/66
Abstract: A method is described for producing ultrafine silicon tips for the AFM/STM profilometry comprising: 1. providing a silicon substrate and applying a silicon dioxide layer thereto; 2. producing a mask in said silicon dioxide layer by photolithography and wet or dry etching; 3. producing a tip shaft by transferring the mask pattern, produced in step 2, by reactive ion etching into the silicon substrate; 4. thinning the shaft and forming a base by isotropic wet etching; and 5. removing the mask by etching. The resulting tip shaft with a rectangular end may be pointed by argon ion milling. In a second embodiment there is an anisotropic wet etching step, prior to step 5, through the intact silicon dioxide mask, producing a negative profile of the shaft immediately below the mask. After this etching step the mask is removed by etching.
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Patent Agency Ranking
公开(公告)号：DE19800555A1
公开(公告)日：1999-07-15
申请号：DE19800555
申请日：1998-01-09
Applicant: IBM
Inventor： BAYER THOMAS , GRESCHNER JOHANN DR , KALT SAMUEL , MEISSNER KLAUS , PAUL RUDOLF
Abstract: A field emission component has several electron emission tips (2) arranged in each of several circular gate holes (5) formed through electrodes. An Independent claim is also included for the production of a field emission component by coating a single crystal silicon substrate with an insulating layer (3), applying a gate metal layer (4) and a photoresist layer on the insulating layer, forming a hole pattern in the resist layer by photolithography, transferring and opening the hole pattern into the gate metal layer by etching, producing tips (2) in the substrate in the hole regions by plasma etching and then applying a back face metallization onto the substrate.
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公开(公告)号：DE19538792A1
公开(公告)日：1997-04-24
申请号：DE19538792
申请日：1995-10-18
Applicant: IBM
Inventor： BAYER THOMAS , GRESCHNER JOHANN DR , MEISSNER KLAUS , STEINER WERNER , STOEHR ROLAND
Abstract: The invention relates to a contact probe arrangement 1 for electrically connecting a test system with the circular contact pads 2 of a device to be tested 3. In order to achieve a low contact resistance the contact probes 4 are orthogonally pressed onto the contact pads 2, and for adjusting height differences in the contact pads 2 caused by an uneven surface of the device to be tested 3 they may bend out laterally into the provided areas 6a, 6b. The contact probes 4 are located in guide grooves 5. The guide grooves 5 as well as the areas 6a, 6b are provided in a plane parallel to the surface of a guide plate 7 and are covered by a protective plate. This assures a very dense contact probe array. Contact probe arrays of this type may be used, for example, for detecting opens and shorts in electrical circuit arrays of microelectronic compounds.
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公开(公告)号：DE68903950T2
公开(公告)日：1993-07-01
申请号：DE68903950
申请日：1989-08-16
Applicant: IBM
Inventor： BAYER THOMAS , GRESCHNER JOHANN DR DIPL PHYS , WEISS HELGA , WOLTER OLAF DR DIPL PHYS , WICKRAMASINGHE DIPL-PHYS DR , MARTIN DIPL-PHYS DR
IPC: G01B7/34 , G01B21/30 , G01N27/00 , G01Q10/04 , G01Q60/04 , G01Q60/16 , G01Q60/38 , G01Q70/10 , H01J37/28 , H01L21/00 , H01L21/66
Abstract: A method is described for producing ultrafine silicon tips for the AFM/STM profilometry comprising: 1. providing a silicon substrate and applying a silicon dioxide layer thereto; 2. producing a mask in said silicon dioxide layer by photolithography and wet or dry etching; 3. producing a tip shaft by transferring the mask pattern, produced in step 2, by reactive ion etching into the silicon substrate; 4. thinning the shaft and forming a base by isotropic wet etching; and 5. removing the mask by etching. The resulting tip shaft with a rectangular end may be pointed by argon ion milling. In a second embodiment there is an anisotropic wet etching step, prior to step 5, through the intact silicon dioxide mask, producing a negative profile of the shaft immediately below the mask. After this etching step the mask is removed by etching.
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公开(公告)号：DE68902141T2
公开(公告)日：1993-02-25
申请号：DE68902141
申请日：1989-08-16
Applicant: IBM
Inventor： GRESCHNER JOHANN DR DIPL-PHYS , BAYER THOMAS , KRAUS GEORG , WOLTER OLAF DR DIPL PHYS , WEISS HELGA , BARTHA JOHANN DR DIPL PHYS
IPC: G01B7/34 , B44C1/22 , B81C1/00 , C03C15/00 , C23F1/00 , G01N27/00 , G01Q60/04 , G01Q70/16 , H01J37/28 , H01L21/306 , H01L41/09
Abstract: A method is described for producing micromechanical sensors for the AFM/STM profilometry, which consist of a cantilever beam with at least one tip at its end and a mounting block at the opposite, comprising: 1. bilaterally coating a wafer substrate with an insulating layer; 2. producing a mask in the insulating layer on the top side of the wafer for future trench or groove etching, and a mask in the insulating layer on the bottom side of the wafer, using a first photolithographic step and reactive ion etching: 3. producing a trench or a groove in the wafer substrate by reactive ion or anisotropic wet etching, respectively, followed by removing the insulating layer from the top side by etching: 4. coating the surface of the wafer and the trench or groove with the desired cantilever beam and tip material, respectively; 5. baring cantilever beam and tip in a second photolithographic step and dry or wet etching steps, respectively; and 6. removing the supporting wafer material from the bottom side by anisotropic wet etching through the bottom side mask. In a preferred embodiment the area on the top side of the cantilever beam corresponding to the remaining piece of wafer on the bottom side is bonded with a block of glass via 'mallory' bonding at about 300 DEG C and 1000 V. Furthermore, the surface of the wafer substrate and the trench can be coated in a first step with a material with nonconformal step coverage, and in a second step with a material with conformal step coverage. The cantilever beam and the tip are bared in the layer with conformal step coverage, and the supporting wafer and the layer with nonconformal step coverage are removed by selective etching through the bottom side mask. The invention also comprises a micromechanical sensor for AFM/STM profilometry which is micromechanically manufactured from one piece of material.
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公开(公告)号：DE3136887A1
公开(公告)日：1983-03-31
申请号：DE3136887
申请日：1981-09-17
Applicant: IBM DEUTSCHLAND
IPC: G01B11/06
Abstract: For the purpose of interferometric measurement of the thickness of a varying layer (10) made from opaque material, use is made of a reference beam (J2) which is reflected at a point of the opaque material which is protected against etching by a transparent layer (11). This reference beam is polarised in the plane of incidence, and is directed onto the transparent layer at the Brewster angle ( theta b). The measuring beam (J1) is polarised at right angles to the plane of incidence and is directed alternately onto the etched part of the opaque material and onto a point of the transparent layer, in order to determine the instantaneous thickness (tm) of the transparent layer (11), which is likewise etched. The instantaneous etched depth (ts) of the opaque material can be determined from the results of the two measuring steps.
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