公开(公告)号：CA1085968A

公开(公告)日：1980-09-16

申请号：CA300416

申请日：1978-04-04

Applicant: IBM

Inventor： HATZAKIS MICHAEL ,  LAPADULA CONSTANTINO ,  LIN BURN J

IPC: H01L21/30 ,  G03F7/30 ,  G11B7/26 ,  H01L21/027 ,  G01N21/30

Abstract: RESIST DEVELOPMENT CONTROL SYSTEM In the process of developing exposed photoresist on a substrate, the endpoint in developing away all of the exposed positive photoresist or any other positive resist is detected by exposing a wafer with a predetermined pattern including an optical grating or other special pattern formed in the photoresist upon a test area. In a system employing this concept, a beam is diffracted by the optics of the grating only at a first angle until the resist forming the grating is removed by development. Then a sensor is activated when an angle of reflection is unblocked when the grating disappears. The system is then turned off to stop development by the sensor in an automatic system or, by the operator in a manual system. A double exposure technique is employed to produce the grating or other special pattern.

公开(公告)号：FR2396332A1

公开(公告)日：1979-01-26

申请号：FR7817712

申请日：1978-06-07

Applicant: IBM

Inventor： HATZAKIS MICHAEL ,  LAPADULA CONSTANTINO ,  LIN BURN J

IPC: H01L21/30 ,  G03F7/30 ,  G11B7/26 ,  H01L21/027 ,  G03C5/24 ,  G01N23/20 ,  G11C11/14

公开(公告)号：FR2316633A1

公开(公告)日：1977-01-28

申请号：FR7611977

申请日：1976-04-16

Applicant: IBM

Inventor： FEDER RALPH ,  HALLER IVAN ,  HATZAKIS MICHAEL ,  ROMANKIW LUBOMYR T ,  SPILLER EBERHARD A

IPC: G03F7/20 ,  G03F7/039 ,  G03F7/32 ,  G03F7/38 ,  H01L21/027 ,  G03F1/00 ,  G03C1/68 ,  G03C5/30

Abstract: A positive resist image is produced by exposing, to radiation in a predetermined pattern, a polymeric material containing polymerized alkyl methacrylate units and polymerized monoethylenically unsaturated acid units. The exposed and unexposed areas are distinguished by their different respective abilities to be swelled in an appropriate swelling agent, and the swelled areas are removed by dispersal in a nonsolvent liquid.

公开(公告)号：DE2628467A1

公开(公告)日：1977-01-27

申请号：DE2628467

申请日：1976-06-25

Applicant: IBM

Inventor： FEDER RALPH ,  HALLER IVAN ,  HATZAKIS MICHAEL ,  ROMANKIW LUBOMYR T ,  SPILLER EBERHARD A

IPC: G03F7/20 ,  G03F7/039 ,  G03F7/32 ,  G03F7/38 ,  H01L21/027 ,  G03C1/68

Abstract: A positive resist image is produced by exposing, to radiation in a predetermined pattern, a polymeric material containing polymerized alkyl methacrylate units and polymerized monoethylenically unsaturated acid units. The exposed and unexposed areas are distinguished by their different respective abilities to be swelled in an appropriate swelling agent, and the swelled areas are removed by dispersal in a nonsolvent liquid.

公开(公告)号：DE2555299A1

公开(公告)日：1976-09-16

申请号：DE2555299

申请日：1975-12-09

Applicant: IBM

Inventor： AHN KIE YEUNG ,  HATZAKIS MICHAEL ,  POWERS JOHN VINCENT

IPC: G11C11/14 ,  H01F10/12 ,  H01F10/13 ,  H01F41/14 ,  H01F41/34 ,  H01L21/3205 ,  H05K3/10 ,  H05K3/24 ,  H05K3/38 ,  H01L21/88 ,  C23C13/02 ,  C25D5/02 ,  C25D7/00 ,  C25D7/12 ,  H01F10/00

公开(公告)号：DE2528666A1

公开(公告)日：1976-01-29

申请号：DE2528666

申请日：1975-06-27

Applicant: IBM

Inventor： HATZAKIS MICHAEL

IPC: H01L21/027 ,  C23F1/00 ,  G03F1/22 ,  G03F1/00

公开(公告)号：DE69012873T2

公开(公告)日：1995-03-30

申请号：DE69012873

申请日：1990-03-13

Applicant: IBM

Inventor： HATZAKIS MICHAEL ,  SHAW JANE MARGARET ,  STEWART KEVIN JAY

IPC: G03F7/038 ,  C08G59/00 ,  C08G59/14 ,  C08G59/18 ,  G03F7/004 ,  G03F7/029 ,  G03F7/075 ,  H01L21/027 ,  H01L21/30

Abstract: A composition containing a polymeric material obtained by interreacting an epoxy-novolak polymer with an organosilicon compound, a radiation sensitive onium salt, and a near U.V. sensitizer.

公开(公告)号：DE69012873D1

公开(公告)日：1994-11-03

申请号：DE69012873

申请日：1990-03-13

Applicant: IBM

Inventor： HATZAKIS MICHAEL ,  SHAW JANE MARGARET ,  STEWART KEVIN JAY

IPC: G03F7/038 ,  C08G59/00 ,  C08G59/14 ,  C08G59/18 ,  G03F7/004 ,  G03F7/029 ,  G03F7/075 ,  H01L21/027 ,  H01L21/30

Abstract: A composition containing a polymeric material obtained by interreacting an epoxy-novolak polymer with an organosilicon compound, a radiation sensitive onium salt, and a near U.V. sensitizer.

公开(公告)号：DE3484271D1

公开(公告)日：1991-04-18

申请号：DE3484271

申请日：1984-12-11

Applicant: IBM

Inventor： BABICH EDWARD DARKO ,  HATZAKIS MICHAEL ,  PARASZCAK JURIJ ROSTYSLAV ,  SHAW JANE MARGARET

IPC: G03C1/72 ,  G03F7/004 ,  G03F7/023 ,  G03F7/038 ,  G03F7/075 ,  H01L21/027 ,  G03F7/022

Abstract: A composition of matter is obtained by interreacting a quinone diazo compound and an organosilicon compound. Such a composition can be used as a resist in a lithographic process.

公开(公告)号：CA1278635C

公开(公告)日：1991-01-02

申请号：CA499558

申请日：1986-01-14

Applicant: IBM

Inventor： BABICH EDWARD D ,  HATZAKIS MICHAEL ,  LIUTKIS JOHN J ,  PARASCZCAK JURI R ,  SHAW JANE M

IPC: G03C5/00 ,  C08F2/48 ,  C08F290/00 ,  C08F299/00 ,  C08F299/08 ,  C08K5/07 ,  C08L83/07 ,  G03F7/00 ,  G03F7/004 ,  G03F7/038 ,  G03F7/075 ,  H01L21/30

Abstract: ORGANOSILICON POLYMER COMPOSITION AND USE THEREOF FOR PHOTOLITHOGRAPHY A composition containing a polysiloxane having a polymerizable ethylenically unsaturated group, and 2,2-dimethoxy-2-phenyl acetophenone as an ultraviolet light sensitizer; and use thereof in lithography.