公开(公告)号：GB2508749A

公开(公告)日：2014-06-11

申请号：GB201403444

申请日：2012-07-18

Applicant: IBM

Inventor： CABRAL CYRIL JR ,  NOGAMI TAKESHI ,  GAMBINO JEFFREY P ,  HUANG QIANG ,  RODBELL KENNETH P

IPC: H01L21/768 ,  H01L21/288 ,  H01L23/532

Abstract: A metal interconnect structure and a method of manufacturing the metal interconnect structure. Manganese (Mn) is incorporated into a copper (Cu) interconnect structure in order to modify the microstructure to achieve bamboo-style grain boundaries in sub-90nm technologies. Preferably, bamboo grains are separated at distances less than the "Blech" length so that copper (Cu) diffusion through grain boundaries is avoided. The added Mn also triggers the growth of Cu grains down to the bottom surface of the metal line so that a true bamboo microstructure reaching to the bottom surface is formed and the Cu diffusion mechanism along grain boundaries oriented along the length of the metal line is eliminated.

公开(公告)号：AT307006T

公开(公告)日：2005-11-15

申请号：AT01952272

申请日：2001-06-27

Applicant: IBM

Inventor： CHEN SHYNG-TSONG ,  CHUNG ALEX SIU KEUNG ,  DAVIS KENNETH M ,  HSU OSCAR KAI CHI ,  RODBELL KENNETH P

IPC: B24B37/26 ,  B24D13/14 ,  H01L21/304 ,  B24B1/00 ,  B24B37/04 ,  B24D18/00 ,  B23C3/28 ,  B26D7/01

Abstract: Grooves are formed in a COD pad by positioning the pad on a supporting surface with a working surface of the pad in spaced relation opposite to a router bit and at least one projecting stop member adjacent to the router bit, an outer end portion of the bit projecting beyond the stop. When the bit is rotated, relative axial movement between the bit and the pad causes the outer end portion of the bit to cut an initial recess in the pad. Relative lateral movement between the rotating bit and the pad then forms a groove which extends laterally away from the recess and has a depth substantially the same as that of the recess. The depths of the initial recess and the groove are limited by applying a vacuum to the working surface of the pad to keep it in contact with the stop member(s). Different lateral movements between the bit and the pad are used to form a variety of groove patterns, the depths of which are precisely controlled by the stop member(s).

公开(公告)号：AT289895T

公开(公告)日：2005-03-15

申请号：AT01950744

申请日：2001-06-29

Applicant: IBM

Inventor： CHEN SHYNG-TSONG ,  DAVIS KENNETH M ,  RODBELL KENNETH P

IPC: B24B37/26 ,  B24D13/12 ,  B24D13/14 ,  B24D18/00 ,  H01L21/304 ,  B24B37/04

Abstract: Grooves are formed in a CMP pad by positioning the pad on a supporting surface with a working surface of the pad in spaced relation opposite to a router bit and at least one projecting stop member adjacent to the router bit, an outer end portion of the bit projecting beyond the stop. When the bit is rotated, relative axial movement between the bit and the pad causes the outer end portion of the bit to cut an initial recess in the pad. Relative lateral movement between the rotating bit and the pad then forms a groove which extends laterally away from the recess and has a depth substantially the same as that of the recess. The depths of the initial recess and the groove are limited by applying a vacuum to the working surface of the pad to keep it in contact with the stop member(s). Different lateral movements between the bit and the pad are used to form a variety of groove patterns, the depths of which are precisely controlled by the stop member(s). The grooves may be formed in the polishing surface and/or the rear opposite surface of the pad and passages may be provided for interconnecting the rear grooves with the polishing surface or the front grooves.

公开(公告)号：HK1036150A1

公开(公告)日：2001-12-21

申请号：HK01106779

申请日：2001-09-26

Applicant: IBM ,  SIEMENS AG

Inventor： CLEVENGER LARRY ,  FILIPPI RONALD G ,  GAMBINO JEFFREY ,  GIGNAC LYNNE ,  HURD JEFFERY L ,  HOINKIS MARK ,  IGGULDEN ROY C ,  MEHTER EBRAHIM ,  RODBELL KENNETH P ,  SCHNABEL FLORIAN ,  WEBER STEFAN J

IPC: H01L20060101 ,  H01L

公开(公告)号：DE102016218690A1

公开(公告)日：2017-04-20

申请号：DE102016218690

申请日：2016-09-28

Applicant: IBM

Inventor： GORDON MICHAEL S ,  NING TAK H ,  RODBELL KENNETH P ,  YAU JENG-BANG

IPC: H01L27/14 ,  G01T1/24 ,  H01L21/331 ,  H01L27/102 ,  H01L29/735

Abstract: Ein integrierter Strahlungssensor für ein Erfassen des Vorhandenseins eines Umgebungsmaterials und/oder einer Umgebungsbedingung beinhaltet eine Messstruktur sowie einen ersten und einen zweiten lateralen Bipolartransistor (BJT), die entgegengesetzte Polaritäten aufweisen. Der erste laterale BJT weist eine Basis auf, die mit der Messstruktur elektrisch gekoppelt ist, und ist so konfiguriert, dass er ein Ausgangssignal erzeugt, das indikativ für eine Änderung einer gespeicherten Ladung in der Messstruktur ist. Der zweite laterale BJT ist so konfiguriert, dass er das Ausgangssignal des ersten Bipolartransistors verstärkt. Der erste und der zweite laterale BJT, die Messstruktur sowie das Substrat, auf dem diese ausgebildet sind, weisen eine monolithische Struktur auf.

公开(公告)号：DE102016104504A1

公开(公告)日：2016-09-15

申请号：DE102016104504

申请日：2016-03-11

Applicant: IBM

Inventor： CHENG KANGGUO ,  DORIS BRUCE B ,  KHAKIFIROOZ ALI ,  RODBELL KENNETH P

IPC: H01L27/088 ,  H01L21/8236 ,  H01L23/552 ,  H01L23/58

Abstract: Es sind ein integrierter Schaltkreis, ein Verfahren zum Bilden eines integrierten Schaltkreises sowie ein Halbleiter zum Verhindern einer unzulässigen Verwendung bei strahlungsfesten Anwendungen offenbart. Bei einer Ausführungsform weist der integrierte Schaltkreis eine Silicium-auf-Isolator(SOI)-Struktur, einen gegenüber Strahlung unempfindlichen Sub-Schaltkreis und einen gegenüber Strahlung empfindlichen Sub-Schaltkreis auf. Die SOI-Struktur weist ein Silicium-Substrat, eine vergrabene Oxidschicht und eine aktive Silicium-Schicht auf. Der gegenüber Strahlung unempfindliche Sub-Schaltkreis ist auf der aktiven Schicht ausgebildet und beinhaltet einen teilweise verarmten Transistor. Der gegenüber Strahlung empfindliche Sub-Schaltkreis ist auf der aktiven Schicht ausgebildet und beinhaltet einen vollständig verarmten Transistor, um einen Betrieb des gegenüber Strahlung empfindlichen Sub-Schaltkreises unter spezifizierten Strahlungsbedingungen zu verhindern. Jeder von dem teilweise verarmten Transistor und dem vollständig verarmten Transistor beinhaltet einen Kanalbereich, der in der aktiven Silicium-Schicht ausgebildet ist, und die Kanalbereiche des teilweise verarmten Transistors und des vollständig verarmten Transistors weisen im Wesentlichen die gleiche Dicke, jedoch unterschiedliche Dotierkonzentrationen auf.

公开(公告)号：GB2508749B

公开(公告)日：2015-12-02

申请号：GB201403444

申请日：2012-07-18

Applicant: IBM

Inventor： CABRAL CYRIL JR ,  NOGAMI TAKESHI ,  GAMBINO JEFFREY P ,  HUANG QIANG ,  RODBELL KENNETH P

IPC: H01L21/768 ,  H01L21/288 ,  H01L23/532

Abstract: A metal interconnect structure and a method of manufacturing the metal interconnect structure. Manganese (Mn) is incorporated into a copper (Cu) interconnect structure in order to modify the microstructure to achieve bamboo-style grain boundaries in sub-90 nm technologies. Preferably, bamboo grains are separated at distances less than the “Blech” length so that copper (Cu) diffusion through grain boundaries is avoided. The added Mn also triggers the growth of Cu grains down to the bottom surface of the metal line so that a true bamboo microstructure reaching to the bottom surface is formed and the Cu diffusion mechanism along grain boundaries oriented along the length of the metal line is eliminated.

公开(公告)号：AU2003265462A8

公开(公告)日：2004-03-11

申请号：AU2003265462

申请日：2003-08-15

Applicant: IBM ,  HYPERNEX INC

Inventor： KOZACZEK KRZYSZTOF J ,  KURTZ DAVID S ,  MORAN PAUL R ,  MARTIN ROGER I ,  DEHAVEN PATRICK W ,  RODBELL KENNETH P ,  MALHOTRA SANDRA G

IPC: G01B15/02 ,  G01N23/20

公开(公告)号：AU7170901A

公开(公告)日：2002-01-14

申请号：AU7170901

申请日：2001-06-29

Applicant: IBM

Inventor： CHEN SHYNG-TSONG ,  DAVIS KENNETH M ,  RODBELL KENNETH P

IPC: B24B37/26 ,  B24D13/12 ,  B24D13/14 ,  B24D18/00 ,  H01L21/304 ,  B24B37/04

Abstract: Grooves are formed in a CMP pad by positioning the pad on a supporting surface with a working surface of the pad in spaced relation opposite to a router bit and at least one projecting stop member adjacent to the router bit, an outer end portion of the bit projecting beyond the stop. When the bit is rotated, relative axial movement between the bit and the pad causes the outer end portion of the bit to cut an initial recess in the pad. Relative lateral movement between the rotating bit and the pad then forms a groove which extends laterally away from the recess and has a depth substantially the same as that of the recess. The depths of the initial recess and the groove are limited by applying a vacuum to the working surface of the pad to keep it in contact with the stop member(s). Different lateral movements between the bit and the pad are used to form a variety of groove patterns, the depths of which are precisely controlled by the stop member(s). The grooves may be formed in the polishing surface and/or the rear opposite surface of the pad and passages may be provided for interconnecting the rear grooves with the polishing surface or the front grooves.

公开(公告)号：SG81271A1

公开(公告)日：2001-06-19

申请号：SG1999001658

申请日：1999-04-12

Applicant: IBM

Inventor： COHEN STEPHEN A ,  MCFEELY FENTON READ ,  NOYAN CEVDET I ,  RODBELL KENNETH P ,  YURKAS JOHN J ,  ROSENBURG ROBERT

IPC: H01L23/52 ,  H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/532 ,  H01L29/12

Abstract: The present invention is directed to an alpha-W layer which is employed in interconnect structures such as trench capacitors or damascene wiring levels as a diffusion barrier layer. The alpha-W layer is a single phased material that is formed by a low temperature/pressure chemical vapor deposition process using tungsten hexacarbonyl, W(CO)6, as the source material.