公开(公告)号：DE10023872C1

公开(公告)日：2001-12-13

申请号：DE10023872

申请日：2000-05-16

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MARKSTEINER STEPHAN ,  AIGNER ROBERT ,  FRANOSCH MARTIN ,  SCHAEFER HERBERT

IPC: B81C1/00

Abstract: Producing microstructures layers comprises applying a layer (3) to be perforated on a sacrificial layer (2) applied on a substrate (1); depositing crystals (6) on the layer to be perforated and forming a mask layer which covers the regions left free by the crystals; producing perforations while the layer is removed from the mask and removing the sacrificial layer using perforations as etching openings. Preferred Features: The crystals are made from silicon. In the second step, a layer of material for the mask layer is deposited on the crystals and between the crystals, leveled and the crystals removed so that the leveled layer remains as the mask layer.

公开(公告)号：DE102009032998B4

公开(公告)日：2015-05-28

申请号：DE102009032998

申请日：2009-07-14

Applicant: INFINEON TECHNOLOGIES AG

Inventor： OPPERMANN KLAUS-GÜNTER ,  FRANOSCH MARTIN

IPC: H01L23/48 ,  H01L21/60 ,  H01L23/498

Abstract: Elektrisches Bauelement, umfassend: – eine Struktur (100, 1000, 2000, 3000), die einen Hohlraum (102) aufweist, der sich von einer Öffnung an einer Hauptfläche (106) der Struktur in die Struktur (100, 1000, 2000, 3000) hinein erstreckt und eine der Hauptfläche (106) gegenüberliegende Bodenfläche umfasst, wobei der Hohlraum (102) einen ersten Teilhohlraum (1021) und einen zweiten Teilhohlraum (1022) umfasst, die fluidisch miteinander verbunden sind und sich jeweils von der Öffnung bis zu der Bodenfläche des Hohlraums (102) erstrecken, wobei ein erster Teil der Öffnung die Öffnung des ersten Teilhohlraums bildet und ein zweiter Teil der Öffnung die Öffnung des zweiten Teilhohlraums bildet; – ein Kontaktelement (110, 111), das aus einem elektrisch leitenden Material (110) hergestellt ist, wobei das Kontaktelement (110, 111) den ersten Teilhohlraum (1021) vollständig füllt, die Bodenfläche des ersten Teilhohlraums (1021) bedeckt, sich durch die Öffnung des ersten Teilhohlraums (1021) erstreckt und über die Hauptfläche (106) der Struktur (100, 1000, 2000, 3000) vorsteht, wobei der zweite Teilhohlraum (1022) nicht von dem elektrisch leitenden Material (110) gefüllt ist und das elektrisch leitende Material (110) sich nicht durch die Öffnung des zweiten Teilhohlraums (1022) erstreckt, und – ein Überhanggebiet (105, 205, 305), das die Öffnung des zweiten Teilhohlraums (1022) begrenzt und den zweiten Teilhohlraum mindestens teilweise überdeckt.

公开(公告)号：DE50115869D1

公开(公告)日：2011-06-16

申请号：DE50115869

申请日：2001-02-07

Applicant: INFINEON TECHNOLOGIES AG

Inventor： FRANOSCH MARTIN ,  SCHAEFER HERBERT ,  MEISTER THOMAS ,  STENGL REINHARD

IPC: H01L29/732 ,  H01L21/331

公开(公告)号：DE59915200D1

公开(公告)日：2010-10-21

申请号：DE59915200

申请日：1999-09-17

Applicant: INFINEON TECHNOLOGIES AG

Inventor： STENGL REINHARD DR ,  SCHAEFER HERBERT DR ,  REISINGER HANS DR ,  LEHMANN VOLKER DR ,  FRANOSCH MARTIN ,  LANGE GERRIT DR ,  WENDT HERMANN DR

IPC: H01L21/8247 ,  H01L27/102 ,  H01L21/8229 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792

公开(公告)号：DE102008012834A1

公开(公告)日：2008-09-25

申请号：DE102008012834

申请日：2008-03-06

Applicant: INFINEON TECHNOLOGIES AG

Inventor： FRANOSCH MARTIN ,  HANDTMANN MARTIN ,  OPPERMANN KLAUS-GUENTER

IPC: H01L23/15 ,  H01L21/58

Abstract: An apparatus comprises a device layer structure, a device integrated into the device layer structure, an insulating carrier substrate and an insulating layer being continuously positioned between the device layer structure and the insulating carrier substrate, the insulating layer having a thickness which is less than 1/10 of a thickness of the insulating carrier substrate. An apparatus further comprises a device integrated into a device layer structure disposed on an insulating layer, a housing layer disposed on the device layer structure and housing the device, a contact providing an electrical connection between the device and a surface of the housing layer opposed to the device layer structure and a molding material surrounding the housing layer and the insulating layer, the molding material directly abutting on a surface of the insulating layer being opposed to the device layer structure.

公开(公告)号：DE102006030359A1

公开(公告)日：2008-01-03

申请号：DE102006030359

申请日：2006-06-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： OPPERMANN KLAUS-GUENTER ,  FRANOSCH MARTIN

IPC: G03F7/30

Abstract: The method involves removing the photo resist residual area that is not cross-linked by applying of a developer on the photo resist that is in contact with an oxygen plasma, and the removing of residual area of the photo resist that is not cross-linked by applying another developer on the photo resist. Both developers have different compositions and both application steps are carried out without further cross-linking of the photo resist, which is arranged as a homogeneous layer on a material structure. The former developer is stronger than the latter developer.

公开(公告)号：DE102006005994A1

公开(公告)日：2007-08-16

申请号：DE102006005994

申请日：2006-02-08

Applicant: INFINEON TECHNOLOGIES AG

Inventor： FRANOSCH MARTIN ,  MECKES ANDREAS ,  FUERGUT EDWARD

IPC: H01L23/053 ,  B81C3/00 ,  H01L21/50 ,  H01L23/58

Abstract: A semiconductor (1) comprises a semiconductor substrate having an active area region (5); a covering (7) configured to protect the active area region; a carrier (11); an interspace (12) between the carrier and the covering, filled with an underfiller material. Independent claims are included for the following: (1) producing a semiconductor wafer having several semiconductor chip positions; (2) producing a panel having several semiconductor component positions; and (3) producing several semiconductor components.

公开(公告)号：DE102005002550A1

公开(公告)日：2006-07-27

申请号：DE102005002550

申请日：2005-01-19

Applicant: INFINEON TECHNOLOGIES AG

Inventor： OPPERMANN KLAUS-GUENTER ,  FRANOSCH MARTIN

IPC: H01L21/3205 ,  G03F7/00 ,  G03F7/26 ,  H01L21/60

Abstract: The method involves developing a photoresist with an organic polar developer so that the photoresist is removed in one region of the surface of photoresist and remains in another region. A coating material is applied on the surface of a material structure e.g. wafer and to the remaining photoresist. The photoresist is removed such that the material remains only in the former region of surface of photoresist.

公开(公告)号：DE102004004476B3

公开(公告)日：2005-07-07

申请号：DE102004004476

申请日：2004-01-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： OPPERMANN KLAUS-GUENTER ,  MECKES ANDREAS ,  FRANOSCH MARTIN

IPC: B81B7/00 ,  H01L21/50 ,  H01L21/68 ,  H03H3/08 ,  B81C3/00 ,  H03H9/10

Abstract: A process for applying resin covers (3) to a system wafer (5) with active components (8), comprises using a carrier (7). The wafer and carrier are prepared, and the cover is applied to the carrier via connection layer (6). The carrier is located on the wafer, afterwhich the carrier and the connection layer are removed mechanically. The semiconductor chips are then separated out. The carrier is flexible.

公开(公告)号：DE10220578A1

公开(公告)日：2003-11-27

申请号：DE10220578

申请日：2002-05-08

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BOECK JOSEF ,  FRANOSCH MARTIN ,  SCHAEFER HERBERT ,  STENGL REINHARD ,  MEISTER THOMAS

IPC: H01L29/45 ,  H01L29/737 ,  H01L29/732 ,  H01L29/73

Abstract: Bipolar transistor comprises an emitter region (3) electrically contacted via an emitter electrode (1), a base region (4) electrically contacted via a base electrode (2), and a collector region (5) electrically contacted via a collector electrode. At least one of the electrodes contains silicon-germanium.