公开(公告)号：FR2979033A1

公开(公告)日：2013-02-15

申请号：FR1202206

申请日：2012-08-08

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BERGER RUDOLF ,  GRUBER HERMANN ,  LEHNERT WOLFGANG ,  RUHL GUENTHER ,  FOERG RAIMUND ,  MAUDER ANTON ,  SCHULZE HANS JOACHIM ,  KELLERMANN KARSTEN ,  SOMMER MICHAEL ,  ROTTMAIR CHRISTIAN ,  RUPP ROLAND

IPC: H01L21/71 ,  H01L21/20 ,  H01L21/48 ,  H01L23/14

Abstract: Procédé de fabrication d'une tranche (13) composite, on se procure une tranche de support comprenant une couche de graphite, on se procure une tranche (10) semiconductrice monocristalline ayant une première face (11) et une deuxième face (12) ; et on forme une couche de liaison sur au moins l'une de la première face (11) de la tranche semiconductrice et de la couche de graphite de la tranche de support.

公开(公告)号：DE102005039804B4

公开(公告)日：2009-07-09

申请号：DE102005039804

申请日：2005-08-22

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MAUDER ANTON ,  SCHULZE HANS-JOACHIM ,  STRACK HELMUT ,  PFIRSCH FRANK

IPC: H01L29/78 ,  H01L21/335 ,  H01L29/06 ,  H01L29/808 ,  H01L29/861

公开(公告)号：DE50114882D1

公开(公告)日：2009-06-18

申请号：DE50114882

申请日：2001-01-17

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MAUDER ANTON ,  RUPP ROLAND ,  GRIEBL ERICH

IPC: H01L27/02 ,  H01L29/872 ,  H01L21/822 ,  H01L27/04 ,  H01L29/47 ,  H01L29/861 ,  H02H9/04

Abstract: A protection device for a Schottky diode is described. The protection device has a cascade circuit with at least two Si-PIN diodes provided parallel to the Schottky diode. The protection device protects against momentary over-current pulses reliably and without a high outlay in terms of cost and necessary materials for forming the protection device.

公开(公告)号：DE102004037656B4

公开(公告)日：2009-06-18

申请号：DE102004037656

申请日：2004-08-03

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MAUDER ANTON ,  SCHOLZ WOLFGANG

IPC: H01L23/48 ,  H01L23/40 ,  H01L25/07 ,  H05K7/20

公开(公告)号：DE102004030573B4

公开(公告)日：2009-01-08

申请号：DE102004030573

申请日：2004-06-24

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MAUDER ANTON ,  SCHULZE HANS-JOACHIM ,  NIEDERNOSTHEIDE FANZ-JOSEF

IPC: H01L29/06 ,  H01L21/322 ,  H01L21/78

Abstract: A method for producing semiconductor elements comprises forming a hydrogen-correlated doping in a treatment region The treatment region comprises at least part of a region which (i) lies outside an inner contiguous zone containing an integrated semiconductor circuit arrangement but not respective associated separating zones and (ii) lies within an outer contiguous zone containing the respective integrated semiconductor circuit arrangement (10) and also the respective associated separating zones.

公开(公告)号：DE102005048447B4

公开(公告)日：2007-07-19

申请号：DE102005048447

申请日：2005-10-07

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MAUDER ANTON ,  SCHULZE HANS-JOACHIM ,  STRACK HELMUT

IPC: H01L29/06 ,  H01L21/336 ,  H01L29/78

公开(公告)号：DE102005044165A1

公开(公告)日：2007-03-29

申请号：DE102005044165

申请日：2005-09-15

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MAUDER ANTON ,  SCHULZE HANS-JOACHIM

IPC: H01L21/761 ,  H01L27/082

Abstract: The component contains laterally-adjacent semiconductors of different type (75, 77), forming a PN junction above an intermediate layer of insulation (57), on a semiconductor substrate (53). A fourth semiconductor layer (59) intervenes locally between the third semiconductor region and the insulation layer. A fifth semiconductor region (61) borders third and fourth regions. A first doping zone lies between fourth and second regions. A second doping zone includes lower doping than the first. First and second doping zones have lower doping than the fourth. An independent claim IS INCLUDED FOR the corresponding method of manufacture.

公开(公告)号：DE10330571B8

公开(公告)日：2007-03-08

申请号：DE10330571

申请日：2003-07-07

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MAUDER ANTON ,  RUETHING HOLGER ,  MILLER GERHARD ,  SCHULZE HANS-JOACHIM ,  BAUER JOSEF GEORG ,  FALCK ELMAR

IPC: H01L29/739 ,  H01L21/331 ,  H01L29/06 ,  H01L29/08 ,  H01L29/40 ,  H01L29/417 ,  H01L29/861

Abstract: A vertical power semiconductor component, e.g. a diode or an IGBT, in which there are formed, on the rear side of a substrate, a rear side emitter or a cathode emitter and, over that, a rear side metal layer that at least partly covers the latter, is defined by the fact that, in the edge region of the component, provision is made of injection attenuation means for reducing the charge carrier injection from the rear side emitter or the cathode emitter into said edge section.

公开(公告)号：DE102005011652A1

公开(公告)日：2007-02-01

申请号：DE102005011652

申请日：2005-03-14

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MAUDER ANTON ,  ACHATZ GERFRIED

IPC: H01L21/60 ,  H01L23/28 ,  H01L23/48

Abstract: The production of a semiconductor component comprises arranging one or more semiconductor chips (1, 2) on a substrate (3) and applying a mask-forming/masking layer (8) is to the surface of the substrate, where before applying the masking layer the actual positions of the contact surfaces are determined. Through-apertures are made in the masking-layer at the regions located over the identified contact surfaces (18,19). Subsequently, on the masking layer at least one conductor layer is applied and penetrates through the apertures to the contact surfaces.

公开(公告)号：DE102004037656A1

公开(公告)日：2006-03-16

申请号：DE102004037656

申请日：2004-08-03

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MAUDER ANTON ,  SCHOLZ WOLFGANG

IPC: H01L23/48 ,  H01L23/40 ,  H01L25/07 ,  H05K7/06 ,  H05K7/20