公开(公告)号：DE10124047B4

公开(公告)日：2006-12-14

申请号：DE10124047

申请日：2001-05-16

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WEBER MICHAEL ,  SEWALD RAINER ,  RIEDL EDMUND

IPC: H01L23/50 ,  H01L21/60 ,  H01L23/31 ,  H01L23/495

公开(公告)号：DE50110184D1

公开(公告)日：2006-07-27

申请号：DE50110184

申请日：2001-12-11

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HEIN WERNER ,  STEGER JOHANN ,  WEBER MICHAEL

IPC: H04L1/18 ,  H04L27/22 ,  H04B1/16 ,  H04L1/16

公开(公告)号：DE102004048203A1

公开(公告)日：2005-12-29

申请号：DE102004048203

申请日：2004-09-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WEBER MICHAEL ,  DANGELMAIER JOCHEN ,  THEUSS HORST ,  DAECHE FRANK

IPC: H01L23/31 ,  H01L23/495 ,  H01L23/50 ,  H01L25/065 ,  H01L25/10 ,  H05K1/11 ,  H05K1/18 ,  H05K3/34

Abstract: The module has an electronic component (1) with a semiconductor chip (2) enclosed in a plastic casing (3). The casing has a vertical opening (7,9) provided with continuous metallization (8,10). In the region nearby the top of vertical opening, a layer of soldering paste is provided which connects the metallization to the contact of another electronic component. Independent claims are also included for the following: (A) Electronic circuit with a stacked semiconductor module; and (B) Method for the manufacture of stacked semiconductor module.

公开(公告)号：AT247847T

公开(公告)日：2003-09-15

申请号：AT99966818

申请日：1999-12-01

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WEBER MICHAEL ,  STEGER JOHANN

IPC: G06F9/40 ,  G06F8/65 ,  G06F9/42 ,  G06F9/44 ,  G06F9/445 ,  G06F9/448 ,  G06F11/00

Abstract: A method for changing the execution of a program stored in a read only memory is described. For this purpose, the program has a multiplicity of program routines, and each program routine can be allocated a subprogram that is stored in a first read/write memory. In addition, each program routine has associated memory locations in a second read/write memory. If a program routine has an associated subprogram, the program routine then calls the subprogram on the basis of the content of the associated memory locations.

公开(公告)号：DE102017111824A1

公开(公告)日：2018-12-06

申请号：DE102017111824

申请日：2017-05-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHINDLER MANFRED ,  WEBER MICHAEL ,  ELIAN KLAUS ,  THEUSS HORST ,  STRUTZ VOLKER

IPC: H01L23/13 ,  H01L23/48

Abstract: Ein Package (100), das Folgendes aufweist: einen Träger (102), der ein durchgehendes Aufnahmeloch (104) aufweist, eine Komponente (106), die zumindest teilweise innerhalb des durchgehenden Aufnahmelochs (104) angeordnet ist, und eine Verbindungsstruktur (108), die den Träger (102) mit der Komponente (106) verbindet.

公开(公告)号：DE10047135B4

公开(公告)日：2006-08-24

申请号：DE10047135

申请日：2000-09-22

Applicant: INFINEON TECHNOLOGIES AG

Inventor： PAULUS STEFAN ,  AUBURGER ALBERT ,  HAINZ OSWALD ,  LANG DIETMAR ,  PETZ MARTIN ,  WEBER MICHAEL

IPC: H01L21/50 ,  H01L23/12 ,  H01L21/48 ,  H01L21/56 ,  H01L21/58 ,  H01L21/60 ,  H01L23/31

公开(公告)号：DE10246101B4

公开(公告)日：2005-12-01

申请号：DE10246101

申请日：2002-10-02

Applicant: INFINEON TECHNOLOGIES AG

Inventor： DAECHE FRANK ,  WEBER MICHAEL ,  DANGELMAIER JOCHEN ,  EHRLER GUENTER ,  MECKES ANDREAS

IPC: B81B7/00 ,  B81C3/00 ,  H01L23/04

Abstract: Production of a housing for a chip with a micro-mechanical structure used in the production of micro-mechanical switches comprises preparing a base having a first photolithographic structurable layer, structuring and further processing. Production of a housing for a chip with a micro-mechanical structure (22) comprises preparing a first base having a first photolithographic structurable layer, structuring the first layer to form a lid for the micro-mechanical structure, preparing a chip with the micro-mechanical structure arranged on a main surface of the chip between first contact elements, applying a second photolithographic structurable layer (28) on a partial region of the main surface of the chip, structuring the second layer to form a recess (32) surrounded by a wall (30) in the second layer and to expose the contact elements, joining the first base and the chip, removing the first base to obtain a chip with a hollow chamber, joining the second base and the chip so that the first contact elements are connected to the second base via a conducting structure, and removing the second base to expose the conducting structure.

公开(公告)号：DE10333841A1

公开(公告)日：2005-02-24

申请号：DE10333841

申请日：2003-07-24

Applicant: INFINEON TECHNOLOGIES AG

Inventor： THEUSS HORST ,  KIENDL HELMUT ,  WEBER MICHAEL

IPC: H01L21/56 ,  H01L23/31 ,  H01L23/50

Abstract: A semiconductor component and a method for its production in semiconductor chip size, can have a semiconductor chip, which has external contacts of the semiconductor component that are arranged in the manner of a flip-chip on its active upper side. The semiconductor chip can be encapsulated by a plastic compound at least on its rear side and its side edges. The outer contacts, which can be arranged on external contact connecting areas, can project from the active upper side.

公开(公告)号：DE10310615B3

公开(公告)日：2004-11-04

申请号：DE10310615

申请日：2003-03-10

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WEBER MICHAEL ,  DANGELMAIER JOCHEN ,  THEUSS HORST

IPC: B01L3/00 ,  B81B1/00 ,  B81C1/00

Abstract: Production of a bio-chip (100) with microstructures (9) on a semiconductor chip (3) comprises covering a semiconductor wafer with a photo-lacquer layer, photo-lithographically structuring micro-channels (2) and micro-rings in the photo-lacquer layer, hardening the2 photo-lacquer layer, and separating the wafer into chips with micro-channels and micro-rings arranged on the upper side of the chip. An independent claim is also included for a bio-chip produced by the above process.

公开(公告)号：DE10310617A1

公开(公告)日：2004-09-30

申请号：DE10310617

申请日：2003-03-10

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WEBER MICHAEL ,  AUBURGER ALBERT ,  THEUSS HORST ,  DAECHE FRANK ,  EHRLER GUENTER ,  MECKES ANDREAS ,  AIGNER ROBERT

IPC: H01L23/31 ,  H01L23/495 ,  H03H9/05 ,  H01L21/50

Abstract: An electronic device can include a top side with circuit structures. The circuit structures form the bottom region of a cavity. Each cavity can be surrounded by a cavity frame made of plastic and can have a cavity cover made of semiconductor material.