公开(公告)号：WO2004084267A3

公开(公告)日：2006-02-23

申请号：PCT/US2004007530

申请日：2004-03-10

Applicant: LAM RES CORP ,  LOHOKARE SHRIKANT P ,  BAILEY ANDREW D III ,  HEMKER DAVID ,  COOK JOEL M

Inventor： LOHOKARE SHRIKANT P ,  BAILEY ANDREW D III ,  HEMKER DAVID ,  COOK JOEL M

IPC: H01L21/3105 ,  H01L21/321 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/311

CPC classification number: H01L21/32135 ,  H01L21/32115 ,  H01L21/32136 ,  H01L21/7684

Abstract: A system and method for planarizing a patterned semiconductor substrate includes receiving a patterned semiconductor substrate (100). The patterned semiconductor substrate includes a conductive interconnect material (120) filling multiple of features (102, 104,106) in the pattern. The conductive interconnect material having an overburden portion (112). The overburden portion (112) includes a localized non-uniformity (indicated in variations 114, 116, 118). An additional layer (202) is formed an the overburden portion. The additional layer and the overburden portion are planarized. The planarizing process substantially entirely removes the additional layer.

Abstract translation: 用于平坦化图案化半导体衬底的系统和方法包括接收图案化的半导体衬底（100）。 图案化的半导体衬底包括以图案填充多个特征（102,104,106）的导电互连材料（120）。 所述导电互连材料具有覆盖层部分（112）。 覆盖层部分（112）包括局部不均匀性（在变化形式114,116,118中指示）。 附加层（202）形成为上覆层部分。 附加层和覆盖层部分被平坦化。 平坦化工艺基本上完全除去附加层。

公开(公告)号：WO0145134A9

公开(公告)日：2002-11-14

申请号：PCT/US0042174

申请日：2000-11-14

Applicant: LAM RES CORP ,  BAILEY ANDREW D III ,  SCHOEPP ALAN M ,  KUTHI ANDRAS

Inventor： BAILEY ANDREW D III ,  SCHOEPP ALAN M ,  KUTHI ANDRAS

IPC: H05H1/46 ,  C23C16/505 ,  H01J37/32 ,  H01L21/3065

CPC classification number: H01J37/32467 ,  H01J37/321

Abstract: A plasma processing apparatus for processing a substrate with a plasma is disclosed. The apparatus includes a first RF power source having a first RF frequency, and a process chamber. Further, the apparatus includes a substantially circular antenna operatively coupled to the first RF power source and disposed above a plane defined by the substrate when the substrate is disposed within the process chamber for processing. The substantially circular antenna being configured to induce an electric field inside the process chamber with a first RF energy generated by the first RF power source. The substantially circular antenna including at least a first pair of concentric loops in a first plane and a second pair of concentric loops in a second plane. The first pair of concentric loops and the second pair of concentric loops being substantially identical and symmetrically aligned with one another. The substantially circular antenna forming an azimuthally symmetric plasma inside the process chamber. The apparatus also includes a coupling window disposed between the antenna and the process chamber. The coupling window being configured to allow the passage of the first RF energy from the antenna to the interior of the process chamber. The coupling window having a first layer and a second layer. The second layer being configured to substantially suppress the capacitive coupling formed between the substantially circular antenna and the plasma. The substantially circular antenna and the coupling window working together to produce a substantially uniform process rate across the surface of the substrate.

Abstract translation: 公开了一种用等离子体处理衬底的等离子体处理装置。 该装置包括具有第一RF频率的第一RF电源和处理室。 此外，该设备包括可操作地耦合到第一RF电源并且当基板设置在处理室内以进行处理时设置在由基板限定的平面之上的基本圆形的天线。 基本上圆形的天线被配置为利用由第一RF电源产生的第一RF能量来诱导处理室内的电场。 基本上圆形的天线包括第一平面中的至少第一对同心环和在第二平面中的第二对同心环。 第一对同心环和第二对同心环彼此基本相同和对称地对准。 大致圆形天线在处理室内形成方位对称等离子体。 该装置还包括设置在天线和处理室之间的耦合窗口。 耦合窗口被配置为允许第一RF能量从天线通过到处理室的内部。 耦合窗具有第一层和第二层。 第二层被配置为基本上抑制形成在基本上圆形的天线和等离子体之间的电容耦合。 基本上圆形的天线和耦合窗口一起工作，以在衬底的表面上产生基本均匀的工艺速率。

公开(公告)号：WO0137311A3

公开(公告)日：2001-10-11

申请号：PCT/US0042158

申请日：2000-11-14

Applicant: LAM RES CORP ,  BAILEY ANDREW D III ,  SCHOEPP ALAN M ,  BRIGHT NICOLAS

Inventor： BAILEY ANDREW D III ,  SCHOEPP ALAN M ,  BRIGHT NICOLAS

IPC: H05H1/46 ,  C23C16/507 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065

CPC classification number: H01J37/32623 ,  H01J37/32688

Abstract: A plasma confinement arrangement for controlling the volume of a plasma while processing a substrate inside a process chamber using a plasma enhanced process is disclosed. The arrangement includes a first magnetic bucket having a plurality of first magnetic elements. The first magnetic elements being configured for producing a first magnetic field inside the process chamber. The arrangement further includes a second magnetic bucket having a plurality of second magnetic elements. The second magnetic elements being configured for producing a second magnetic field inside the process chamber. The second magnetic field being configured to combine with the first magnetic field to produce a resultant magnetic field between the first magnetic bucket and the second magnetic bucket. The resultant magnetic field being configured to permit by-product gas from the processing to pass through while substantially confining the plasma within a volume defined at least by the process chamber and the resultant magnetic field.

Abstract translation: 公开了一种等离子体限制装置，用于在使用等离子体增强过程处理处理室内的衬底的同时控制等离子体的体积。 该装置包括具有多个第一磁性元件的第一磁性桶。 第一磁性元件被配置用于在处理室内产生第一磁场。 该装置还包括具有多个第二磁性元件的第二磁性桶。 第二磁性元件构造成用于在处理室内产生第二磁场。 第二磁场被配置为与第一磁场组合以在第一磁性铲斗和第二磁性铲斗之间产生合成的磁场。 所得到的磁场被配置为允许来自处理的副产物气体通过，同时基本上将等离子体限制在至少由处理室限定的体积和所得的磁场中。

公开(公告)号：SG187256A1

公开(公告)日：2013-03-28

申请号：SG2013007901

申请日：2011-06-22

Applicant: LAM RES CORP

Inventor： DHINDSA RAJINDER ,  MARAKHATNOV ALEXEI ,  BAILEY ANDREW D III

Abstract: An electrode is exposed to a plasma generation volume and is defined to transmit radiofrequency power to the plasma generation volume, and includes an upper surface for holding a substrate in exposure to the plasma generation volume. A gas distribution unit is disposed above the plasma generation volume and in a substantially parallel orientation to the electrode. The gas distribution unit includes an arrangement of gas supply ports for directing an input flow of a plasma process gas into the plasma generation volume in a direction substantially perpendicular to the upper surface of the electrode. The gas distribution unit also includes an arrangement of through-holes that each extend through the gas distribution unit to fluidly connect the plasma generation volume to an exhaust region. Each of the through-holes directs an exhaust flow from the plasma generation volume in a direction substantially perpendicular to the upper surface of the electrode.

公开(公告)号：AU5758101A

公开(公告)日：2001-10-08

申请号：AU5758101

申请日：2001-03-13

Applicant: LAM RES CORP

Inventor： BAILEY ANDREW D III

IPC: H01J37/32 ,  H01J37/00

Abstract: A plasma confinement arrangement for controlling the volume of a plasma while processing a substrate inside a process chamber includes a chamber within which a plasma is both ignited and sustained for processing. The chamber is defined at least in part by a wall and further includes a plasma confinement arrangement. The plasma confinement arrangement includes a magnetic array disposed inside of the chamber. The magnetic array has a plurality of magnetic elements that are disposed around a plasma region within the process chamber.

公开(公告)号：AU1606101A

公开(公告)日：2001-05-30

申请号：AU1606101

申请日：2000-11-14

Applicant: LAM RES CORP

Inventor： BAILEY ANDREW D III ,  SCHOEPP ALAN M ,  HEMKER DAVID J ,  WILCOXSON MARK H

IPC: C23C16/507 ,  B05D7/24 ,  H01J37/32 ,  H01L21/3065

Abstract: A plasma processing system for processing a substrate, is disclosed. The plasma processing system includes a single chamber, substantially azimuthally symmetric plasma processing chamber within which a plasma is both ignited and sustained for the processing. The plasma processing chamber has no separate plasma generation chamber. The plasma processing chamber has an upper end and a lower end. The plasma processing chamber includes a material that does not substantially react with the reactive gas chemistries that are delivered into the plasma processing chamber. In addition, the reactant gases that are flown into the plasma processing chamber are disclosed.

公开(公告)号：SG11201401989UA

公开(公告)日：2014-09-26

申请号：SG11201401989U

申请日：2012-11-01

Applicant: LAM RES CORP

Inventor： DHINDSA RAHINDER ,  MARAKHTANOV ALEXEI ,  DELGADINO GERARDO ,  HUDSON ERIC ,  YEN BI MING ,  BAILEY ANDREW D III

IPC: H01L21/306

公开(公告)号：MY147419A

公开(公告)日：2012-12-14

申请号：MYPI20080850

申请日：2006-09-22

Applicant: LAM RES CORP

Inventor： ALEXANDER YOON HYUNGSUK ,  WILLIAM THIE ,  YEZDI DORDI ,  BAILEY ANDREW D III

IPC: B23K10/00

Abstract: 17 APPARATUS FOR THE REMOVAL OF A METAL OXIDE FROM A SUBSTRATE AND METHODS THEREFOR ABSTRACT OF THE DISCLOSURE AN APPARATUS GENERATING A PLASMA FOR REMOVING METAL OXIDE FROM A SUBSTRATE IS 5 DISCLOSED. THE EMBODIMENT INCLUDES A POWERED ELECTRODE ASSEMBLY, INCLUDING A POWERED ELECTRODE, A FIRST DIELECTRIC LAYER, AND A FIRST WIRE MESH DISPOSED BETWEEN THE POWERED ELECTRODE AND THE FIRST DIELECTRIC LAYER. THE EMBODIMENT ALSO INCLUDES A GROUNDED ELECTRODE ASSEMBLY DISPOSED OPPOSITE THE POWERED ELECTRODE ASSEMBLY SO AS TO FORM A CAVITY WHEREIN THE PLASMA IS GENERATED, THE FIRST WIRE MESH BEING SHIELDED FROM THE PLASMA BY THE FIRST DIELECTRIC LAYER WHEN 10 THE PLASMA IS PRESENT IN THE CAVITY, THE CAVITY HAVING AN OUTLET AT ONE END FOR PROVIDING THE PLASMA TO REMOVE THE METAL OXIDE.

公开(公告)号：AU1767401A

公开(公告)日：2001-05-30

申请号：AU1767401

申请日：2000-11-14

Applicant: LAM RES CORP

Inventor： BAILEY ANDREW D III ,  SCHOEPP ALAN M ,  HEMKER DAVID J ,  WILCOXSON MARK H

IPC: H05H1/46 ,  H01J37/32 ,  H01L21/3065

Abstract: A plasma processing system that includes a plasma processing chamber that provides enhanced control over an etch process is disclosed. The plasma processing chamber is connected to a gas flow system. The gas flow system can be employed to control the release of gases into different regions within the plasma processing chamber. In addition, the volume of the released gas, e.g., the flow rate of the gas, can be adjusted by a gas flow control mechanism. In this manner, both the position and the amount of the gas that is delivered to the plasma processing chamber can be controlled. The ability to adjust the position and the amount of gas that is released into the plasma processing chamber provides for a better control over the distribution of the neutral components. This in turn enhances control over the etching process.

公开(公告)号：SG2014013858A

公开(公告)日：2014-07-30

申请号：SG2014013858

申请日：2008-01-24

Applicant: LAM RES CORP

Inventor： BAILEY ANDREW D III ,  SCHOEPP ALAN M ,  SEXTON GREGORY ,  KIM YUNSANG ,  KENNEDY WILLIAM S

Abstract: A device for cleaning a bevel edge of a semiconductor substrate. The device includes: a lower support having a cylindrical top portion; a lower plasma-exclusion-zone (PEZ) ring surrounding the outer edge of the top portion and adapted to support the substrate; an upper dielectric component opposing the lower support and having a cylindrical bottom portion; an upper PEZ ring surrounding the outer edge of the bottom portion and opposing the lower PEZ ring; and at least one radiofrequency (RF) power source operative to energize process gas into plasma in an annular space defined by the upper and lower PEZ rings, wherein the annular space encloses the bevel edge.