公开(公告)号：DE69535922D1

公开(公告)日：2009-04-09

申请号：DE69535922

申请日：1995-12-05

Applicant: LAM RES CORP

Inventor： BARNES MICHAEL ,  HOLLAND JOHN ,  VELTROP ROBERT ,  BENJAMIN NEIL ,  BEER RICHARD

IPC: H01J37/32 ,  H05H1/46 ,  C23C16/507 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065

Abstract: A plasma processor for large workpieces includes a vacuum chamber having plural individually supported dielectric windows for coupling an r.f. field originating outside of the chamber into the chamber to excite the plasma. A planar coil for inductively deriving the field has plural segments with the same electrical length, each including an element connected in parallel with an element of another segment.

公开(公告)号：DE69736977D1

公开(公告)日：2007-01-04

申请号：DE69736977

申请日：1997-06-02

Applicant: LAM RES CORP

Inventor： BENJAMIN NEIL ,  HYLBERT JON ,  MANGANO STEFANO

IPC: H01L21/00 ,  H01L21/302 ,  H01J37/20 ,  H01L21/285 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/677

Abstract: A vacuum processing chamber having a substrate support removably mounted therein. The chamber includes an opening in a sidewall thereof and the opening is large enough to allow the substrate support to be removed from the chamber through the opening. A modular mounting arrangement extends through the opening and removably supports the substrate support in the interior of the chamber at a position located inwardly of an inner sidewall of the chamber. The mounting arrangement includes a mounting flange and a support arm. The mounting flange is attached to an exterior surface of the chamber and the support arm extends between the substrate support and the mounting flange. The chamber includes a single vacuum port in a central portion of an endwall of the chamber spaced from the substrate support. The vacuum port is connected to a vacuum pump which removes gases from the interior of the chamber and maintains the chamber at a pressure below atmospheric pressure. The substrate support is easy to service or replace since it can be removed through a sidewall of the chamber. The sidewall mounted substrate support also allows a large vacuum port to be located in the endwall of the chamber thus allowing high flow to be achieved by connecting the vacuum port a large capacity vacuum pump. The chamber also includes a modular liner, a modular plasma generating source and a modular vacuum pumping arrangement, each of which can be replaced with interchangeable equipment.

公开(公告)号：AU2002343368A1

公开(公告)日：2003-04-01

申请号：AU2002343368

申请日：2002-09-16

Applicant: LAM RES CORP

Inventor： BENJAMIN NEIL ,  COOPERBERG DAVID

IPC: H05H1/46 ,  H01J37/32

Abstract: A plasma processor coil can include a shorting turn ohmically or only reactively coupled to plural multi-turn, co-planar, interleaved spiral, parallel connected windings. A separate capacitor can be associated with each winding to shunt current from one portion of that winding to another portion of the winding. The spacing between adjacent turns of peripheral portions of each winding can differ from the spacing between adjacent turns of interior portions of each winding. The coil can have a length that is short relative to the wavelength of RF excitation for the coil.

公开(公告)号：AT230811T

公开(公告)日：2003-01-15

申请号：AT97925746

申请日：1997-06-02

Applicant: LAM RES CORP

Inventor： WICKER THOMAS E ,  COOK JOEL M ,  MARASCHIN ROBERT A ,  KENNEDY WILLIAM S ,  BENJAMIN NEIL

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/50 ,  C23C16/505 ,  C23C16/507 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302

Abstract: A plasma processing chamber includes a substrate holder and a dielectric member such as a dielectric window or gas distribution plate having an interior surface facing the substrate holder, the interior surface being maintained below a threshold temperature to minimize process drift during processing of substrates. The chamber can include an antenna which inductively couples RF energy through the dielectric member to energize process gas into a plasma state. The antenna can include a channel through which a temperature controlling fluid, which has been cooled by a closed circuit temperature controller, is passed. The control of the temperature of the interior surface minimizes process drift and degradation of the quality of the processed substrates during sequential batch processing of substrates such as during oxide etching of semiconductor wafers.

公开(公告)号：CA2206679A1

公开(公告)日：1996-06-13

申请号：CA2206679

申请日：1995-12-05

Applicant: LAM RES CORP

Inventor： BEER RICHARD ,  BENJAMIN NEIL ,  VELTROP ROBERT ,  HOLLAND JOHN ,  BARNES MICHAEL

IPC: H05H1/46 ,  C23C16/507 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/00

Abstract: A plasma processor for large workpieces includes a vacuum chamber having plural individually supported dielectric windows for coupling an r.f. field originating outside of the chamber into the chamber to excite the plasma. A planar coil for inductively deriving the field has plural segments with the same electrical length, each including an element connected in parallel with an element of another segment.

公开(公告)号：SG182969A1

公开(公告)日：2012-08-30

申请号：SG2012048005

申请日：2008-06-25

Applicant: LAM RES CORP

Inventor： BENJAMIN NEIL

Abstract: AbstractDISTRIBUTED POWER ARRANGEMENTS FOR LOCALIZING POWER DELIVERYA distributed power arrangement to provide local power delivery in a plasma processing system during substrate processing is provided. The distributed power arrangement includes a set of direct current (DC) power supply units. The distributed power arrangement also includes a plurality of power generators, which is configured to receive power from the set of DC power supply units. Each power generator of the plurality of power generators is coupled to a set of electrical elements, thereby enabling the each power generator of the plurality of power generators to control the local power delivery.Figure: 3A

公开(公告)号：AT537689T

公开(公告)日：2011-12-15

申请号：AT02780307

申请日：2002-09-16

Applicant: LAM RES CORP

Inventor： BENJAMIN NEIL ,  COOPERBERG DAVID

IPC: H05H1/46 ,  H01J37/32 ,  H05H1/32

Abstract: A plasma processor coil can include a shorting turn ohmically or only reactively coupled to plural multi-turn, co-planar, interleaved spiral, parallel connected windings. A separate capacitor can be associated with each winding to shunt current from one portion of that winding to another portion of the winding. The spacing between adjacent turns of peripheral portions of each winding can differ from the spacing between adjacent turns of interior portions of each winding. The coil can have a length that is short relative to the wavelength of RF excitation for the coil.

公开(公告)号：AT459100T

公开(公告)日：2010-03-15

申请号：AT02741903

申请日：2002-06-10

Applicant: LAM RES CORP

Inventor： NAKAJIMA SHU ,  BENJAMIN NEIL

IPC: H01L21/3065 ,  H01L21/68 ,  H01L21/683 ,  H02N13/00

Abstract: A sintered ceramic electrostatic chucking device (ESC) which includes a patterned electrostatic clamping electrode embedded in a ceramic body wherein the clamping electrode includes at least one strip of a sintered electrically conductive material arranged in a fine pattern. Due to the fineness of the electrode pattern employed, stresses induced during manufacture of the ESC are reduced such that the clamping electrode remains substantially planar after the sintering operation. The resulting ESC allows for improved clamping uniformity. Another ESC includes an insulating or semi-conducting body and a clamping electrode having a high resistivity and or a high lateral impedance. The electrostatic chucking device provides improved RF coupling uniformity when RF energy is coupled thorough the clamping electrode from an underlying RF electrode. The RF electrode can be a separate baseplate or it can be a part of the chuck. The ESC's may be used to support semiconductor substrates such as semiconductor wafers in plasma processing equipment.

公开(公告)号：DE60038175D1

公开(公告)日：2008-04-10

申请号：DE60038175

申请日：2000-06-29

Applicant: LAM RES CORP

Inventor： DAUGHERTY JOHN E ,  BENJAMIN NEIL ,  BOGART JEFF ,  VAHEDI VAHID ,  COOPERBERG DAVID ,  MILLER ALAN ,  YAMAGUCHI YOKO

IPC: H01J37/32 ,  H05H1/46 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/687

Abstract: A plasma processing chamber (302) for etching a substrate (306), the substrate having a top surface, a bottom surface and an edge, said plasma processing chamber comprising: a radio frequency (RF) powered chuck (504), said RF powered chuck supporting at least a portion of the bottom surface of the substrate; and a grooved edge ring (308) having an inner surface that is placed over a portion of said RF powered chuck and adjacent to an edge of the substrate; and wherein the grooved ring provides a grooved area in the vicinity of the edge of the substrate.

公开(公告)号：DE60219343T2

公开(公告)日：2007-12-13

申请号：DE60219343

申请日：2002-10-09

Applicant: LAM RES CORP

Inventor： COOPERBERG DAVID J ,  VAHEDI VAHID ,  RATTO DOUGLAS ,  SINGH HARMEET ,  BENJAMIN NEIL

IPC: H01J37/32 ,  H05H1/46 ,  C23C16/44 ,  C23C16/455 ,  C23C16/507 ,  C23F4/00 ,  H01L21/205 ,  H01L21/3065

Abstract: A tunable multi-zone injection system for a plasma processing system for plasma processing of substrates such as semiconductor wafers. The injector can include an on-axis outlet supplying process gas at a first flow rate to a central zone and off-axis outlets supplying the same process gas at a second flow rate to an annular zone surrounding the central zone. The arrangement permits modification of gas delivery to meet the needs of a particular processing regime by allowing independent adjustment of the gas flow to multiple zones in the chamber. In addition, compared to consumable showerhead arrangements, a removably mounted gas injector can be replaced more easily and economically.