公开(公告)号：AU2003228799A8

公开(公告)日：2003-11-11

申请号：AU2003228799

申请日：2003-05-01

Applicant: LAM RES CORP

Inventor： KUTHI ANDRAS ,  BAILEY ANDREW D III ,  HOWALD ARTHUR M ,  BERNEY BUTCH

IPC: H05H1/46 ,  C23C16/00 ,  C23C16/50 ,  H01J37/32 ,  H01L21/205 ,  H01L21/306 ,  H01L21/3065 ,  H05H1/00

Abstract: A plasma processing chamber for processing a substrate to form electronic components thereon is disclosed. The plasma processing chamber includes a plasma-facing component having a plasma-facing surface oriented toward a plasma in the plasma processing chamber during processing of the substrate, the plasma-facing component being electrically isolated from a ground terminal. The plasma processing chamber further includes a grounding arrangement coupled to the plasma-facing component, the grounding arrangement including a first resistance circuit disposed in a first current path between the plasma-facing component and the ground terminal. The grounding arrangement further includes a RF filter arrangement disposed in at least one other current path between the plasma-facing component and the ground terminal, wherein a resistance value of the first resistance circuit is selected to substantially eliminate arcing between the plasma and the plasma-facing component during the processing of the substrate.

公开(公告)号：MY171542A

公开(公告)日：2019-10-17

申请号：MYPI2012004997

申请日：2007-08-17

Applicant: LAM RES CORP

Inventor： THIE WILLIAM ,  JOHN BOYD ,  ARUNAGIRI TIRUCHIRAPALLI ,  REDEKER FRITZ C ,  DORDI YEZDI ,  HOWALD ARTHUR M ,  YOON HYUNGSUK ALEXANDER ,  VERTOMMEN JOHAN

IPC: B05D1/18

Abstract: The embodiments provide processes and integrated systems that produce a metal-to-metal or a silicon-to-metal interface to enhance electro-migration performance, to provide lower metal resistivity, and to improve metal-to-metal or silicon-to-metal interfacial adhesion for copper interconnects. An exemplary method of preparing a substrate surface to selectively deposit a thin layer of a cobalt-alloy material on a copper surface of in an integrated system (450) to improve electromigration performance of a copper interconnect is provided. The method includes removing contaminants and metal oxides from the substrate surface in the integrated system, and reconditioning the substrate surface using a reducing environment after removing contaminants and metal oxides in the integrated system. The method also includes selectively depositing the thin layer of cobalt-alloy material on the copper surface of the copper interconnect in the integrated system after reconditioning the substrate surface. System to practice the exemplary method described above are also provided.

公开(公告)号：SG10201501328WA

公开(公告)日：2015-04-29

申请号：SG10201501328W

申请日：2007-08-28

Applicant: LAM RES CORP

Inventor： BOYD JOHN ,  DORDI YEZDI ,  ARUNAGIRI TIRUCHIRAPALLI ,  MOORING BENJAMIN W ,  PARKS JOHN ,  THIE WILLIAM ,  REDEKER FRITZ C ,  HOWALD ARTHUR M ,  SCHOEPP ALAN ,  HEMKER DAVID ,  CARL WOODS ,  HYUNGSUK ALEXANDER YOON ,  ALEKSANDER OWCZARZ

Abstract: A cluster architecture including a lab-ambient controlled transfer module that is coupled to one or more wet substrate processing modules The lab-ambient controlled transfer module and the one or more wet substrate processing modules manage a first ambient environment having a vacuum transfer module coupled to the lab-ambient controlled transfer module and one or more plasma processing modules The vacuum transfer module and the one or more plasma processing modules manage a second ambient environment A controlled ambient transfer module coupled to the vacuum transfer module and one or more ambient processing modules manage a third ambient environment The cluster architecture therefore enables controlled processing of the substrate in eith the first, second or third ambient environments, as well as dupng associated transitions The embodiments also provide for efficient methods for filling a trench of a substrate

公开(公告)号：IL166342A

公开(公告)日：2009-08-03

申请号：IL16634205

申请日：2005-01-17

Applicant: LAM RES CORP ,  HOWALD ARTHUR M ,  KUTHI ANDREAS ,  WILCOXSON MARK HENRY ,  III ANDREW D BAILEY

Inventor： HOWALD ARTHUR M ,  KUTHI ANDREAS ,  WILCOXSON MARK HENRY ,  III ANDREW D BAILEY

IPC: H05H1/46 ,  H01J37/32 ,  H01L21/3065 ,  H01Q1/26 ,  H01Q7/00 ,  H01Q11/12 ,  H01Q21/29

Abstract: An antenna arrangement for generating an rf field distribution at a plasma generating region inside a chamber wall of a process chamber of a plasma processing apparatus is described. The antenna arrangement includes an rf inductive antenna to which an rf power supply can be connected to supply an rf current to generate a first rf field extending into the plasma generating region. A passive antenna is also provided which is inductively coupled to the rf inductive antenna and configured to generate a second rf field modifying the first rf field. The rf field distribution at the plasma generating region increases the processing uniformity of the processing apparatus compared to that in the absence of the passive antenna.

公开(公告)号：DE60034321T2

公开(公告)日：2007-08-30

申请号：DE60034321

申请日：2000-02-10

Applicant: LAM RES CORP

Inventor： HOWALD ARTHUR M ,  HOLLAND JOHN P ,  OLSON CHRISTOPHER

IPC: H01J37/32 ,  H05H1/00 ,  C23F4/00 ,  H01J7/24 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H03H7/40 ,  H05B31/26 ,  H05H1/46

Abstract: A tendency for a discontinuity to occur in the amount of power reflected back to an r.f. bias source of a vacuum plasma processor is overcome by controlling the r.f. bias source output power so the power delivered to plasma in a vacuum processing chamber remains substantially constant. The r.f bias source output power is changed much faster than changes in capacitors of a matching network connecting the r.f. bias power source to an electrode of a workpiece holder processor. A capacitive impedance component of the plasma is determined by optically measuring the thickness of a plasma sheath in the chamber.

公开(公告)号：AU2003256565A1

公开(公告)日：2004-02-09

申请号：AU2003256565

申请日：2003-07-17

Applicant: LAM RES CORP

Inventor： WILCOXSON MARK HENRY ,  BAILEY ANDREW D III ,  HOWALD ARTHUR M ,  KUTHI ANDREAS

IPC: H05H1/46 ,  H01J37/32 ,  H01L21/3065 ,  H01Q1/26 ,  H01Q7/00 ,  H01Q11/12 ,  H01Q21/29

Abstract: An antenna arrangement for generating an rf field distribution at a plasma generating region inside a chamber wall of a process chamber of a plasma processing apparatus is described. The antenna arrangement includes an rf inductive antenna to which an rf power supply can be connected to supply an rf current to generate a first rf field extending into the plasma generating region. A passive antenna is also provided which is inductively coupled to the rf inductive antenna and configured to generate a second rf field modifying the first rf field. The rf field distribution at the plasma generating region increases the processing uniformity of the processing apparatus compared to that in the absence of the passive antenna.

公开(公告)号：AU5817999A

公开(公告)日：2000-04-17

申请号：AU5817999

申请日：1999-09-10

Applicant: LAM RES CORP

Inventor： HOWALD ARTHUR M ,  HOLLAND JOHN P

IPC: C23C16/458 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/683 ,  H02N13/00 ,  H01L21/68

Abstract: A glass workpiece being processed in a vacuum plasma processing chamber is dechucked from a monopolar electrostatic chuck by gradually reducing the chucking voltage during processing while maintaining the voltage high enough to clamp the workpiece. A reverse polarity voltage applied to the chuck at the end of processing assists in dechucking. The workpiece temperature is maintained at a high value at the end of processing to assisting in dechucking. Peak current flowing through the chuck during lifting of the workpiece from the chuck controls the amplitude and/or duration of the reverse polarity voltage during the next dechucking operation.